2024
|
Lu, Jian; Sui, Xinmeng; Novoselov, Kostya S; Huang, Pengru; Xu, Fen; Sun, Lixian Electron beam-assisted synthesis and modification of electrode/separator materials for lithium-ion batteries: Progress and prospects COORDINATION CHEMISTRY REVIEWS, 515 , 2024, DOI: 10.1016/j.ccr.2024.215954. Abstract | BibTeX | Endnote @article{ISI:001245767900001,
title = {Electron beam-assisted synthesis and modification of electrode/separator materials for lithium-ion batteries: Progress and prospects},
author = {Jian Lu and Xinmeng Sui and Kostya S Novoselov and Pengru Huang and Fen Xu and Lixian Sun},
doi = {10.1016/j.ccr.2024.215954},
times_cited = {0},
issn = {0010-8545},
year = {2024},
date = {2024-09-15},
journal = {COORDINATION CHEMISTRY REVIEWS},
volume = {515},
publisher = {ELSEVIER SCIENCE SA},
address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
abstract = {Lithium ion batteries (LIBs) have been recognized as an indispensable option for substantially reducing fossil fuel consumption in industrial production and daily life. Given that the electrode and separator are pivotal components of LIBs, their properties notably impact the electrochemical performance of the entire system. Consequently, the efficient synthesis and modification of electrode or separator using versatile and cost-effective methods are the key for a wide range of LIBs applications. Currently, electron beam technology has emerged as a potent choice for synthesizing and modifying electrode and separator materials. Herein, we categorize electron beam technology and outline its vital roles in material processing. Additionally, the advancements on the synthesis and modification of anode, cathode as well as separator materials with the assistance of electron beam is highlighted, and the mechanisms of electron beam to enhance the electrochemical properties for electrode/ separator are negotiated. Finally, we examine the challenges and prospects associated with the application of electron beam technology in the context of LIBs.},
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Lithium ion batteries (LIBs) have been recognized as an indispensable option for substantially reducing fossil fuel consumption in industrial production and daily life. Given that the electrode and separator are pivotal components of LIBs, their properties notably impact the electrochemical performance of the entire system. Consequently, the efficient synthesis and modification of electrode or separator using versatile and cost-effective methods are the key for a wide range of LIBs applications. Currently, electron beam technology has emerged as a potent choice for synthesizing and modifying electrode and separator materials. Herein, we categorize electron beam technology and outline its vital roles in material processing. Additionally, the advancements on the synthesis and modification of anode, cathode as well as separator materials with the assistance of electron beam is highlighted, and the mechanisms of electron beam to enhance the electrochemical properties for electrode/ separator are negotiated. Finally, we examine the challenges and prospects associated with the application of electron beam technology in the context of LIBs. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULu, J
Sui, XM
Novoselov, KS
Huang, PR
Xu, F
Sun, LX
- AFJian Lu
Xinmeng Sui
Kostya S Novoselov
Pengru Huang
Fen Xu
Lixian Sun
- TIElectron beam-assisted synthesis and modification of electrode/separator materials for lithium-ion batteries: Progress and prospects
- SOCOORDINATION CHEMISTRY REVIEWS
- LAEnglish
- DTArticle
- DEElectrode Materials; Electron Beam; LIBs; Modification; Electrochemical Performance
- IDTHIN-FILM ANODES; HIGH-CAPACITY ANODE; HIGH-PERFORMANCE; POLYETHYLENE SEPARATOR; CARBON NANOTUBE; COMPOSITE; IRRADIATION; GRAPHENE; SI; OXIDE
- ABLithium ion batteries (LIBs) have been recognized as an indispensable option for substantially reducing fossil fuel consumption in industrial production and daily life. Given that the electrode and separator are pivotal components of LIBs, their properties notably impact the electrochemical performance of the entire system. Consequently, the efficient synthesis and modification of electrode or separator using versatile and cost-effective methods are the key for a wide range of LIBs applications. Currently, electron beam technology has emerged as a potent choice for synthesizing and modifying electrode and separator materials. Herein, we categorize electron beam technology and outline its vital roles in material processing. Additionally, the advancements on the synthesis and modification of anode, cathode as well as separator materials with the assistance of electron beam is highlighted, and the mechanisms of electron beam to enhance the electrochemical properties for electrode/ separator are negotiated. Finally, we examine the challenges and prospects associated with the application of electron beam technology in the context of LIBs.
- C1[Lu, Jian; Sui, Xinmeng] Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China.
[Huang, Pengru; Xu, Fen; Sun, Lixian] Guilin Univ Elect Technol, Guangxi Collaborat Innovat Ctr Struct & Property N, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China.
[Novoselov, Kostya S.; Huang, Pengru] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Sui, Xinmeng] Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China - C3Guilin University of Electronic Technology; Guilin University of Electronic Technology; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Dalian University of Technology
- RPSun, LX (corresponding author), Guilin Univ Elect Technol, Guangxi Collaborat Innovat Ctr Struct & Property N, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China; Novoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore
- FUNational Natural Science Foundation of China [U20A20237, 52371218, 52271205, 52201206, 51971068, 22179026]; Scientific Research and Technology Development Program of Guangxi [AA19182014, AD17195073, AA17202030-1]; Guangxi key research and development program [2021AB17045]; Guangxi Science and Technology Program [Guike AD23026170, Guike AD23026116]; Science Research and Technology Development project of Guilin [20210216-1, 20210102-4]; Guangxi Bagui Scholar Foundation [GZ1528]; Guilin Lijiang Scholar Foundation [FPRU2022-4]; Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Materials [EDUNC- 33-18-279-V12]; Guangxi Advanced Functional Materials Foundation and Application Talents Small Highlands [RSRPR 190000]; Chinesisch-Deutsche Kooperationsgruppe [22-35-4-S019]; Ministry of Education, Singapore (Research Centre of Excellence award) [23354S002]; Guangxi Key Laboratory of Sustainable Utilization of Plant Functional Substances; Royal Society (UK); Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology; ; ;
- FXThis work was financially supported by the National Natural Science Foundation of China (U20A20237, 52371218, 52271205, 52201206, 51971068, and 22179026) , the Scientific Research and Technology Development Program of Guangxi (AA19182014, AD17195073, AA17202030-1) , Guangxi key research and development program (2021AB17045) , Guangxi Science and Technology Program (Guike AD23026170, Guike AD23026116) , Science Research and Technology Development project of Guilin (20210216-1, 20210102-4) , Guangxi Bagui Scholar Foundation, Guilin Lijiang Scholar Foundation, Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Materials, Guangxi Advanced Functional Materials Foundation and Application Talents Small Highlands, Chinesisch-Deutsche Koo- perationsgruppe (GZ1528) , Guangxi Key Laboratory of Sustainable Utilization of Plant Functional Substances (FPRU2022-4) . KSN acknowledges support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM, project No. EDUNC- 33-18-279-V12) and from the Royal Society (UK, grant number RSRPR 190000) . The Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology (Grant Nos. 22-35-4-S019 and 23354S002) .
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Liu, Ya-Feng; Li, Yuan-Qing; Novoselov, Kostya S; Fu, Shao-Yun Influence of spider hair structure on acoustic response EXTREME MECHANICS LETTERS, 70 , 2024, DOI: 10.1016/j.eml.2024.102171. Abstract | BibTeX | Endnote @article{ISI:001246487600001,
title = {Influence of spider hair structure on acoustic response},
author = {Ya-Feng Liu and Yuan-Qing Li and Kostya S Novoselov and Shao-Yun Fu},
doi = {10.1016/j.eml.2024.102171},
times_cited = {0},
issn = {2352-4316},
year = {2024},
date = {2024-08-01},
journal = {EXTREME MECHANICS LETTERS},
volume = {70},
publisher = {ELSEVIER},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
abstract = {It is well known that spiders have an extraordinary auditory sensitivity. However, significant differences in the acoustic impedance between air and solids (spiders) would reduce the acoustic energy transmitted from air to spiders, and by intuition this might result in a significant decrease in the acoustic sensitivity of spiders. This mechanism has been long troubled in researchers' minds that how hunting spiders could have an outstanding auditory sensitivity. In this paper, the auditory sensing mechanisms of hunting spiders are studied by theoretical analysis and simulation. The results show that the acoustic impedance can be adjusted by spiders' hairs with particular features to realize the acoustic impedance matching between air and spiders, which could make spiders' hairs easily send signals to the nervous system of spiders, thus significantly promoting the acoustic energy transfer from air to spiders. Both the appropriate length and deflection angle of hairs are critical to determine the acoustic impedance/acoustic transmission coefficient. In parallel, verification test is carried out on an innovative bionic hair array. The experiment result shows that the acoustic impedance is significantly descended by the bionic hair array with the spiders' acoustic hairs' features, which provides a sufficient proof of the acoustic impedance matching by spiders' hairs. Consequently, this work clearly discloses the acoustic sensing mechanism for the extraordinary auditory sensitivity of hunting spiders, which may have a great significance for the development of artificial auditory technology and sound stealth devices.},
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It is well known that spiders have an extraordinary auditory sensitivity. However, significant differences in the acoustic impedance between air and solids (spiders) would reduce the acoustic energy transmitted from air to spiders, and by intuition this might result in a significant decrease in the acoustic sensitivity of spiders. This mechanism has been long troubled in researchers' minds that how hunting spiders could have an outstanding auditory sensitivity. In this paper, the auditory sensing mechanisms of hunting spiders are studied by theoretical analysis and simulation. The results show that the acoustic impedance can be adjusted by spiders' hairs with particular features to realize the acoustic impedance matching between air and spiders, which could make spiders' hairs easily send signals to the nervous system of spiders, thus significantly promoting the acoustic energy transfer from air to spiders. Both the appropriate length and deflection angle of hairs are critical to determine the acoustic impedance/acoustic transmission coefficient. In parallel, verification test is carried out on an innovative bionic hair array. The experiment result shows that the acoustic impedance is significantly descended by the bionic hair array with the spiders' acoustic hairs' features, which provides a sufficient proof of the acoustic impedance matching by spiders' hairs. Consequently, this work clearly discloses the acoustic sensing mechanism for the extraordinary auditory sensitivity of hunting spiders, which may have a great significance for the development of artificial auditory technology and sound stealth devices. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULiu, YF
Li, YQ
Novoselov, KS
Fu, SY
- AFYa-Feng Liu
Yuan-Qing Li
Kostya S Novoselov
Shao-Yun Fu
- TIInfluence of spider hair structure on acoustic response
- SOEXTREME MECHANICS LETTERS
- LAEnglish
- DTArticle
- DEFlexible Electronics; Biomimetic; Mechanics
- IDSYSTEMS
- ABIt is well known that spiders have an extraordinary auditory sensitivity. However, significant differences in the acoustic impedance between air and solids (spiders) would reduce the acoustic energy transmitted from air to spiders, and by intuition this might result in a significant decrease in the acoustic sensitivity of spiders. This mechanism has been long troubled in researchers' minds that how hunting spiders could have an outstanding auditory sensitivity. In this paper, the auditory sensing mechanisms of hunting spiders are studied by theoretical analysis and simulation. The results show that the acoustic impedance can be adjusted by spiders' hairs with particular features to realize the acoustic impedance matching between air and spiders, which could make spiders' hairs easily send signals to the nervous system of spiders, thus significantly promoting the acoustic energy transfer from air to spiders. Both the appropriate length and deflection angle of hairs are critical to determine the acoustic impedance/acoustic transmission coefficient. In parallel, verification test is carried out on an innovative bionic hair array. The experiment result shows that the acoustic impedance is significantly descended by the bionic hair array with the spiders' acoustic hairs' features, which provides a sufficient proof of the acoustic impedance matching by spiders' hairs. Consequently, this work clearly discloses the acoustic sensing mechanism for the extraordinary auditory sensitivity of hunting spiders, which may have a great significance for the development of artificial auditory technology and sound stealth devices.
- C1[Liu, Ya-Feng] Southwest Univ, Coll Artificial Intelligence, Chongqing 400715, Peoples R China.
[Liu, Ya-Feng; Li, Yuan-Qing; Fu, Shao-Yun] Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China.
[Liu, Ya-Feng] Chongqing 2D Mat Inst, Chongqing 400714, Peoples R China.
[Novoselov, Kostya S.] Natl Univ Singapore, Inst Funct Intelligent Mat, Bldg S9,4 Sci Dr 2, Singapore 117544, Singapore - C3Southwest University - China; Chongqing University; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPFu, SY (corresponding author), Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China
- FUNational Natural Science Foundation of China [12002190, 12332008, 12272067]; Fundamental Research Funds for the Central Uni-versities [SWU-KQ22029]; Chongqing Natural Science Foundation [CSTB2022NSCQ-MSX1635]; China Postdoctoral Science Foundation [2022M710524]
- FXAcknowledgments The authors are grateful for the financial support of the National Natural Science Foundation of China (Grant Nos. 12002190, 12332008 and 12272067) the Fundamental Research Funds for the Central Uni-versities (Grant No. SWU-KQ22029) , the Chongqing Natural Science Foundation (Grant No. CSTB2022NSCQ-MSX1635) , and the China Postdoctoral Science Foundation (Grant No. 2022M710524) .
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Grzeszczyk, Magdalena; Vaklinova, Kristina; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Konstantin S; Koperski, Maciej Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions LIGHT-SCIENCE & APPLICATIONS, 13 (1), 2024, DOI: 10.1038/s41377-024-01491-5. Abstract | BibTeX | Endnote @article{ISI:001265495000003,
title = {Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions},
author = {Magdalena Grzeszczyk and Kristina Vaklinova and Kenji Watanabe and Takashi Taniguchi and Konstantin S Novoselov and Maciej Koperski},
doi = {10.1038/s41377-024-01491-5},
times_cited = {0},
issn = {2095-5545},
year = {2024},
date = {2024-07-08},
journal = {LIGHT-SCIENCE & APPLICATIONS},
volume = {13},
number = {1},
publisher = {SPRINGERNATURE},
address = {CAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND},
abstract = {Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.},
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Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUGrzeszczyk, M
Vaklinova, K
Watanabe, K
Taniguchi, T
Novoselov, KS
Koperski, M
- AFMagdalena Grzeszczyk
Kristina Vaklinova
Kenji Watanabe
Takashi Taniguchi
Konstantin S Novoselov
Maciej Koperski
- TIElectroluminescence from pure resonant states in hBN-based vertical tunneling junctions
- SOLIGHT-SCIENCE & APPLICATIONS
- LAEnglish
- DTArticle
- IDNUCLEAR-SPIN QUBITS; BORON-NITRIDE; ELECTRON; EMISSION; DYNAMICS; DIAMOND; CENTERS
- ABDefect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.
- C1[Grzeszczyk, Magdalena; Vaklinova, Kristina; Novoselov, Konstantin S.; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Watanabe, Kenji] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba 3050044, Japan.
[Taniguchi, Takashi] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan.
[Novoselov, Konstantin S.; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore - C3Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National Institute for Materials Science; National Institute for Materials Science; National University of Singapore
- RPGrzeszczyk, M (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Koperski, M (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
- FUMinistry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018- T3-1-005). [EDUN C-33-18-279-V12, MOE2018-T3-1-005]; Ministry of Education (Singapore) through the Research Centre of Excellence program [MOE-T2EP50122-0012]; Ministry of Education, Singapore [FA8655-21-1-7026]; Air Force Office of Scientific Research [19H05790, 20H00354, 21H05233]; Office of Naval Research Global; JSPS KAKENHI
- FXThis project was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018-T3-1-005). This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012). This material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233).DAS:The data that support the findings of this study are openly available at the following https://doi.org/10.58132/B4QQ5E.
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Al-Maeeni, Abdalaziz; Lazarev, Mikhail; Kazeev, Nikita; Novoselov, Kostya S; Ustyuzhanin, Andrey Review on automated 2D material design 2D MATERIALS, 11 (3), 2024, DOI: 10.1088/2053-1583/ad4661. Abstract | BibTeX | Endnote @article{ISI:001248928500001,
title = {Review on automated 2D material design},
author = {Abdalaziz Al-Maeeni and Mikhail Lazarev and Nikita Kazeev and Kostya S Novoselov and Andrey Ustyuzhanin},
doi = {10.1088/2053-1583/ad4661},
times_cited = {0},
issn = {2053-1583},
year = {2024},
date = {2024-07-01},
journal = {2D MATERIALS},
volume = {11},
number = {3},
publisher = {IOP Publishing Ltd},
address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND},
abstract = {Deep learning (DL) methodologies have led to significant advancements in various domains, facilitating intricate data analysis and enhancing predictive accuracy and data generation quality through complex algorithms. In materials science, the extensive computational demands associated with high-throughput screening techniques such as density functional theory, coupled with limitations in laboratory production, present substantial challenges for material research. DL techniques are poised to alleviate these challenges by reducing the computational costs of simulating material properties and by generating novel materials with desired attributes. This comprehensive review document explores the current state of DL applications in materials design, with a particular emphasis on two-dimensional materials. The article encompasses an in-depth exploration of data-driven approaches in both forward and inverse design within the realm of materials science.},
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Deep learning (DL) methodologies have led to significant advancements in various domains, facilitating intricate data analysis and enhancing predictive accuracy and data generation quality through complex algorithms. In materials science, the extensive computational demands associated with high-throughput screening techniques such as density functional theory, coupled with limitations in laboratory production, present substantial challenges for material research. DL techniques are poised to alleviate these challenges by reducing the computational costs of simulating material properties and by generating novel materials with desired attributes. This comprehensive review document explores the current state of DL applications in materials design, with a particular emphasis on two-dimensional materials. The article encompasses an in-depth exploration of data-driven approaches in both forward and inverse design within the realm of materials science. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUAl-Maeeni, A
Lazarev, M
Kazeev, N
Novoselov, KS
Ustyuzhanin, A
- AFAbdalaziz Al-Maeeni
Mikhail Lazarev
Nikita Kazeev
Kostya S Novoselov
Andrey Ustyuzhanin
- TIReview on automated 2D material design
- SO2D MATERIALS
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- DEDeep Learning; Material Science; 2D Materials; Materials Generation; Inverse Design
- IDINVERSE PROBLEMS; STRUCTURE PREDICTION; NEURAL-NETWORKS; CRYSTAL; OPTIMIZATION; ALGORITHM; FIELD; FERROMAGNETISM; REPRESENTATION; EXFOLIATION
- ABDeep learning (DL) methodologies have led to significant advancements in various domains, facilitating intricate data analysis and enhancing predictive accuracy and data generation quality through complex algorithms. In materials science, the extensive computational demands associated with high-throughput screening techniques such as density functional theory, coupled with limitations in laboratory production, present substantial challenges for material research. DL techniques are poised to alleviate these challenges by reducing the computational costs of simulating material properties and by generating novel materials with desired attributes. This comprehensive review document explores the current state of DL applications in materials design, with a particular emphasis on two-dimensional materials. The article encompasses an in-depth exploration of data-driven approaches in both forward and inverse design within the realm of materials science.
- C1[Al-Maeeni, Abdalaziz; Lazarev, Mikhail] HSE Univ, Myasnitskaya Ulitsa 20, Moscow 101000, Russia.
[Ustyuzhanin, Andrey] Constructor Univ, D-28759 Bremen, Germany.
[Kazeev, Nikita; Novoselov, Kostya S.; Ustyuzhanin, Andrey] Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore - C3HSE University (National Research University Higher School of Economics); National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPUstyuzhanin, A (corresponding author), Constructor Univ, D-28759 Bremen, Germany; Ustyuzhanin, A (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore
- FUMinistry of Education, Singapore [EDUNC-33-18-279-V12]; Royal Society (UK) [RSRPR190000]
- FXThe article/review was prepared within the framework of the project 'Mirror Laboratories' HSE University, RF. This research / project is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM, project No. EDUNC-33-18-279-V12). K.S.N. is grateful to the Royal Society (UK, grant number RSRPR190000) for support.
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Latychevskaia, T; Bandurin, D A; Novoselov, K S A new family of septuple-layer 2D materials of MoSi2N4-like crystals NATURE REVIEWS PHYSICS, 2024, DOI: 10.1038/s42254-024-00728-x. Abstract | BibTeX | Endnote @article{ISI:001250865000001,
title = {A new family of septuple-layer 2D materials of MoSi_{2}N_{4}-like crystals},
author = {T Latychevskaia and D A Bandurin and K S Novoselov},
doi = {10.1038/s42254-024-00728-x},
times_cited = {0},
year = {2024},
date = {2024-06-17},
journal = {NATURE REVIEWS PHYSICS},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Recently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been obtained with chemical vapour deposition growth. It can be considered as MoN2 crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). The discovery of this material has spurred on research into its electronic properties, and also to the prediction and classification of dozens of other members of the family. Whereas the originally synthesized MoSi2N4 is a semiconductor, some of the members of the family are also metallic, some are magnetic, some showing remarkable properties, such as very high room-temperature electron mobilities. The major interest towards these materials is coming from the septuple-layer structure, which allows not only multiple crystal phases but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms. In this Review, we provide a profile of this new family of materials and discuss the possibilities they open up towards new physics and applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Recently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been obtained with chemical vapour deposition growth. It can be considered as MoN2 crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). The discovery of this material has spurred on research into its electronic properties, and also to the prediction and classification of dozens of other members of the family. Whereas the originally synthesized MoSi2N4 is a semiconductor, some of the members of the family are also metallic, some are magnetic, some showing remarkable properties, such as very high room-temperature electron mobilities. The major interest towards these materials is coming from the septuple-layer structure, which allows not only multiple crystal phases but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms. In this Review, we provide a profile of this new family of materials and discuss the possibilities they open up towards new physics and applications. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULatychevskaia, T
Bandurin, DA
Novoselov, KS
- AFT Latychevskaia
D A Bandurin
K S Novoselov
- TIA new family of septuple-layer 2D materials of MoSi2N4-like crystals
- SONATURE REVIEWS PHYSICS
- LAEnglish
- DTArticle
- IDTRANSITION-METAL BORIDES; 2-DIMENSIONAL MATERIALS; MONOLAYER; PIEZOELECTRICITY; PREDICTION
- ABRecently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been obtained with chemical vapour deposition growth. It can be considered as MoN2 crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). The discovery of this material has spurred on research into its electronic properties, and also to the prediction and classification of dozens of other members of the family. Whereas the originally synthesized MoSi2N4 is a semiconductor, some of the members of the family are also metallic, some are magnetic, some showing remarkable properties, such as very high room-temperature electron mobilities. The major interest towards these materials is coming from the septuple-layer structure, which allows not only multiple crystal phases but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms. In this Review, we provide a profile of this new family of materials and discuss the possibilities they open up towards new physics and applications.
- C1[Latychevskaia, T.] Paul Scherrer Inst, Villigen, Switzerland.
[Bandurin, D. A.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore.
[Novoselov, K. S.] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore - C3Swiss Federal Institutes of Technology Domain; Paul Scherrer Institute; National University of Singapore; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPBandurin, DA (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore; Novoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore
- FUSwiss National Foundation Research Grant [200021_197107]; Ministry of Education, Singapore [EDUNC-33-18-279-V12]; Royal Society (UK) [RSRPR190000]; National Research Foundation, Singapore under its AI Singapore Programme [AISG3-RP-2022-028]
- FXT.L. thanks Swiss National Foundation Research Grant 200021_197107. D.A.B. and K.S.N. acknowledge support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM, project number EDUNC-33-18-279-V12). K.S.N. acknowledges support from the Royal Society (UK, grant number RSRPR190000) and the National Research Foundation, Singapore under its AI Singapore Programme (AISG Award No: AISG3-RP-2022-028).
- NR149
- TC0
- Z90
- U11
- U21
- PUNATURE PORTFOLIO
- PIBERLIN
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- J9NAT REV PHYS
- JINat. Rev. Phys.
- PDJUN 17
- PY2024
- DI10.1038/s42254-024-00728-x
- PG13
- WCPhysics, Applied; Physics, Multidisciplinary
- SCPhysics
- GAUV6B3
- UTWOS:001250865000001
- ER
- EF
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