2024
|
Lu, Jian; Sui, Xinmeng; Novoselov, Kostya S; Huang, Pengru; Xu, Fen; Sun, Lixian Electron beam-assisted synthesis and modification of electrode/separator materials for lithium-ion batteries: Progress and prospects COORDINATION CHEMISTRY REVIEWS, 515 , 2024, DOI: 10.1016/j.ccr.2024.215954. Abstract | BibTeX | Endnote @article{ISI:001245767900001,
title = {Electron beam-assisted synthesis and modification of electrode/separator materials for lithium-ion batteries: Progress and prospects},
author = {Jian Lu and Xinmeng Sui and Kostya S Novoselov and Pengru Huang and Fen Xu and Lixian Sun},
doi = {10.1016/j.ccr.2024.215954},
times_cited = {0},
issn = {0010-8545},
year = {2024},
date = {2024-09-15},
journal = {COORDINATION CHEMISTRY REVIEWS},
volume = {515},
publisher = {ELSEVIER SCIENCE SA},
address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
abstract = {Lithium ion batteries (LIBs) have been recognized as an indispensable option for substantially reducing fossil fuel consumption in industrial production and daily life. Given that the electrode and separator are pivotal components of LIBs, their properties notably impact the electrochemical performance of the entire system. Consequently, the efficient synthesis and modification of electrode or separator using versatile and cost-effective methods are the key for a wide range of LIBs applications. Currently, electron beam technology has emerged as a potent choice for synthesizing and modifying electrode and separator materials. Herein, we categorize electron beam technology and outline its vital roles in material processing. Additionally, the advancements on the synthesis and modification of anode, cathode as well as separator materials with the assistance of electron beam is highlighted, and the mechanisms of electron beam to enhance the electrochemical properties for electrode/ separator are negotiated. Finally, we examine the challenges and prospects associated with the application of electron beam technology in the context of LIBs.},
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Lithium ion batteries (LIBs) have been recognized as an indispensable option for substantially reducing fossil fuel consumption in industrial production and daily life. Given that the electrode and separator are pivotal components of LIBs, their properties notably impact the electrochemical performance of the entire system. Consequently, the efficient synthesis and modification of electrode or separator using versatile and cost-effective methods are the key for a wide range of LIBs applications. Currently, electron beam technology has emerged as a potent choice for synthesizing and modifying electrode and separator materials. Herein, we categorize electron beam technology and outline its vital roles in material processing. Additionally, the advancements on the synthesis and modification of anode, cathode as well as separator materials with the assistance of electron beam is highlighted, and the mechanisms of electron beam to enhance the electrochemical properties for electrode/ separator are negotiated. Finally, we examine the challenges and prospects associated with the application of electron beam technology in the context of LIBs. - FNClarivate Analytics Web of Science
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- AULu, J
Sui, XM
Novoselov, KS
Huang, PR
Xu, F
Sun, LX
- AFJian Lu
Xinmeng Sui
Kostya S Novoselov
Pengru Huang
Fen Xu
Lixian Sun
- TIElectron beam-assisted synthesis and modification of electrode/separator materials for lithium-ion batteries: Progress and prospects
- SOCOORDINATION CHEMISTRY REVIEWS
- LAEnglish
- DTArticle
- DEElectrode Materials; Electron Beam; LIBs; Modification; Electrochemical Performance
- IDTHIN-FILM ANODES; HIGH-CAPACITY ANODE; HIGH-PERFORMANCE; POLYETHYLENE SEPARATOR; CARBON NANOTUBE; COMPOSITE; IRRADIATION; GRAPHENE; SI; OXIDE
- ABLithium ion batteries (LIBs) have been recognized as an indispensable option for substantially reducing fossil fuel consumption in industrial production and daily life. Given that the electrode and separator are pivotal components of LIBs, their properties notably impact the electrochemical performance of the entire system. Consequently, the efficient synthesis and modification of electrode or separator using versatile and cost-effective methods are the key for a wide range of LIBs applications. Currently, electron beam technology has emerged as a potent choice for synthesizing and modifying electrode and separator materials. Herein, we categorize electron beam technology and outline its vital roles in material processing. Additionally, the advancements on the synthesis and modification of anode, cathode as well as separator materials with the assistance of electron beam is highlighted, and the mechanisms of electron beam to enhance the electrochemical properties for electrode/ separator are negotiated. Finally, we examine the challenges and prospects associated with the application of electron beam technology in the context of LIBs.
- C1[Lu, Jian; Sui, Xinmeng] Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Guilin 541004, Peoples R China.
[Huang, Pengru; Xu, Fen; Sun, Lixian] Guilin Univ Elect Technol, Guangxi Collaborat Innovat Ctr Struct & Property N, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China.
[Novoselov, Kostya S.; Huang, Pengru] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Sui, Xinmeng] Dalian Univ Technol, Sch Mat Sci & Engn, Key Lab Solidificat Control & Digital Preparat Tec, Dalian 116024, Peoples R China - C3Guilin University of Electronic Technology; Guilin University of Electronic Technology; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Dalian University of Technology
- RPSun, LX (corresponding author), Guilin Univ Elect Technol, Guangxi Collaborat Innovat Ctr Struct & Property N, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China; Novoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore
- FUNational Natural Science Foundation of China [U20A20237, 52371218, 52271205, 52201206, 51971068, 22179026]; Scientific Research and Technology Development Program of Guangxi [AA19182014, AD17195073, AA17202030-1]; Guangxi key research and development program [2021AB17045]; Guangxi Science and Technology Program [Guike AD23026170, Guike AD23026116]; Science Research and Technology Development project of Guilin [20210216-1, 20210102-4]; Guangxi Bagui Scholar Foundation [GZ1528]; Guilin Lijiang Scholar Foundation [FPRU2022-4]; Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Materials [EDUNC- 33-18-279-V12]; Guangxi Advanced Functional Materials Foundation and Application Talents Small Highlands [RSRPR 190000]; Chinesisch-Deutsche Kooperationsgruppe [22-35-4-S019]; Ministry of Education, Singapore (Research Centre of Excellence award) [23354S002]; Guangxi Key Laboratory of Sustainable Utilization of Plant Functional Substances; Royal Society (UK); Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology; ; ;
- FXThis work was financially supported by the National Natural Science Foundation of China (U20A20237, 52371218, 52271205, 52201206, 51971068, and 22179026) , the Scientific Research and Technology Development Program of Guangxi (AA19182014, AD17195073, AA17202030-1) , Guangxi key research and development program (2021AB17045) , Guangxi Science and Technology Program (Guike AD23026170, Guike AD23026116) , Science Research and Technology Development project of Guilin (20210216-1, 20210102-4) , Guangxi Bagui Scholar Foundation, Guilin Lijiang Scholar Foundation, Guangxi Collaborative Innovation Centre of Structure and Property for New Energy and Materials, Guangxi Advanced Functional Materials Foundation and Application Talents Small Highlands, Chinesisch-Deutsche Koo- perationsgruppe (GZ1528) , Guangxi Key Laboratory of Sustainable Utilization of Plant Functional Substances (FPRU2022-4) . KSN acknowledges support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM, project No. EDUNC- 33-18-279-V12) and from the Royal Society (UK, grant number RSRPR 190000) . The Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology (Grant Nos. 22-35-4-S019 and 23354S002) .
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Koon, Gavin K W; Donato, Katarzyna Z; Carvalho, Alexandra; de Bugallo, Andres Luna; Strupiechonski, Elodie; Donato, Ricardo K; Neto, Castro A H Colossal conductivity anisotropy in 3D metallic carbon films CARBON, 228 , 2024, DOI: 10.1016/j.carbon.2024.119316. Abstract | BibTeX | Endnote @article{ISI:001253185900001,
title = {Colossal conductivity anisotropy in 3D metallic carbon films},
author = {Gavin K W Koon and Katarzyna Z Donato and Alexandra Carvalho and Andres Luna de Bugallo and Elodie Strupiechonski and Ricardo K Donato and Castro A H Neto},
doi = {10.1016/j.carbon.2024.119316},
times_cited = {0},
issn = {0008-6223},
year = {2024},
date = {2024-09-01},
journal = {CARBON},
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address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
abstract = {Harnessing the phenomena of quantum coherence and destructive interference, we have successfully engineered and synthesized a three-dimensional (3D) graphene-based film exhibiting remarkable properties, including metallic thermal conductivity (kappa approximate to 150 Wm-1K-1) and electrical conductivity (sigma approximate to 320 kSm-1) at room temperature. Notably, these films demonstrate colossal transport anisotropies, reaching approximately 103 for thermal and 105 for electrical conductivity. This places them among the conducting materials with the highest anisotropies known to date, surpassing even the performance of one-dimensional (1D) carbon nanotubes and two-dimensional (2D) materials like h-BN and MoS2. These films are synthesized by self-assembly and crosslinking of edge-hydrolyzed graphene flakes. The electron transport between flakes is phonon mediated and at low temperatures the films present quantum critical behavior of a metal to Anderson insulator transition. We measure the electron transport properties in a Hall bar geometry and extract the critical exponents as a function of the sample mobility.},
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Harnessing the phenomena of quantum coherence and destructive interference, we have successfully engineered and synthesized a three-dimensional (3D) graphene-based film exhibiting remarkable properties, including metallic thermal conductivity (kappa approximate to 150 Wm-1K-1) and electrical conductivity (sigma approximate to 320 kSm-1) at room temperature. Notably, these films demonstrate colossal transport anisotropies, reaching approximately 103 for thermal and 105 for electrical conductivity. This places them among the conducting materials with the highest anisotropies known to date, surpassing even the performance of one-dimensional (1D) carbon nanotubes and two-dimensional (2D) materials like h-BN and MoS2. These films are synthesized by self-assembly and crosslinking of edge-hydrolyzed graphene flakes. The electron transport between flakes is phonon mediated and at low temperatures the films present quantum critical behavior of a metal to Anderson insulator transition. We measure the electron transport properties in a Hall bar geometry and extract the critical exponents as a function of the sample mobility. - FNClarivate Analytics Web of Science
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Donato, KZ
Carvalho, A
Bugallo, AD
Strupiechonski, E
Donato, RK
Neto, AHC
- AFGavin K W Koon
Katarzyna Z Donato
Alexandra Carvalho
Andres Luna de Bugallo
Elodie Strupiechonski
Ricardo K Donato
Castro A H Neto
- TIColossal conductivity anisotropy in 3D metallic carbon films
- SOCARBON
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- DECarbon; Anisotropy; Edge-chemistry; Processability; Conductivity; Thin Film
- IDGRAPHENE OXIDE; INSULATOR-TRANSITION; TEMPERATURE; LOCALIZATION; GRAPHITE; SYSTEMS; FIELD
- ABHarnessing the phenomena of quantum coherence and destructive interference, we have successfully engineered and synthesized a three-dimensional (3D) graphene-based film exhibiting remarkable properties, including metallic thermal conductivity (kappa approximate to 150 Wm-1K-1) and electrical conductivity (sigma approximate to 320 kSm-1) at room temperature. Notably, these films demonstrate colossal transport anisotropies, reaching approximately 103 for thermal and 105 for electrical conductivity. This places them among the conducting materials with the highest anisotropies known to date, surpassing even the performance of one-dimensional (1D) carbon nanotubes and two-dimensional (2D) materials like h-BN and MoS2. These films are synthesized by self-assembly and crosslinking of edge-hydrolyzed graphene flakes. The electron transport between flakes is phonon mediated and at low temperatures the films present quantum critical behavior of a metal to Anderson insulator transition. We measure the electron transport properties in a Hall bar geometry and extract the critical exponents as a function of the sample mobility.
- C3National University of Singapore; National University of Singapore; National University of Singapore; CIDESI - Centro de Ingenieria y Desarrollo Industrial
- RPKoon, GKW (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore
- FXThis research, including the computational calculations, was carried out at the Centre for Advanced 2D Materials (CA2DM) , funded by the National Research Foundation, Prime Minister's Office, Singapore, under its Medium -Sized Centre Programme, and by the Singapore Ministry of Education under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials, National University of Singapore (I-FIM, project No. EDUNC-33-18-279-V12) . The National Supercomputing Centre, Singapore (NSCC) is acknowledged for providing computational resources. The authors are also thankful to TA Instruments Singapore for the use of their facilities to perform low-temperature DMA measurements and to B. Ozyilmaz's group for the use of a low -temperature transport measurement setup.
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Liu, Ya-Feng; Li, Yuan-Qing; Novoselov, Kostya S; Fu, Shao-Yun Influence of spider hair structure on acoustic response EXTREME MECHANICS LETTERS, 70 , 2024, DOI: 10.1016/j.eml.2024.102171. Abstract | BibTeX | Endnote @article{ISI:001246487600001,
title = {Influence of spider hair structure on acoustic response},
author = {Ya-Feng Liu and Yuan-Qing Li and Kostya S Novoselov and Shao-Yun Fu},
doi = {10.1016/j.eml.2024.102171},
times_cited = {0},
issn = {2352-4316},
year = {2024},
date = {2024-08-01},
journal = {EXTREME MECHANICS LETTERS},
volume = {70},
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address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
abstract = {It is well known that spiders have an extraordinary auditory sensitivity. However, significant differences in the acoustic impedance between air and solids (spiders) would reduce the acoustic energy transmitted from air to spiders, and by intuition this might result in a significant decrease in the acoustic sensitivity of spiders. This mechanism has been long troubled in researchers' minds that how hunting spiders could have an outstanding auditory sensitivity. In this paper, the auditory sensing mechanisms of hunting spiders are studied by theoretical analysis and simulation. The results show that the acoustic impedance can be adjusted by spiders' hairs with particular features to realize the acoustic impedance matching between air and spiders, which could make spiders' hairs easily send signals to the nervous system of spiders, thus significantly promoting the acoustic energy transfer from air to spiders. Both the appropriate length and deflection angle of hairs are critical to determine the acoustic impedance/acoustic transmission coefficient. In parallel, verification test is carried out on an innovative bionic hair array. The experiment result shows that the acoustic impedance is significantly descended by the bionic hair array with the spiders' acoustic hairs' features, which provides a sufficient proof of the acoustic impedance matching by spiders' hairs. Consequently, this work clearly discloses the acoustic sensing mechanism for the extraordinary auditory sensitivity of hunting spiders, which may have a great significance for the development of artificial auditory technology and sound stealth devices.},
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It is well known that spiders have an extraordinary auditory sensitivity. However, significant differences in the acoustic impedance between air and solids (spiders) would reduce the acoustic energy transmitted from air to spiders, and by intuition this might result in a significant decrease in the acoustic sensitivity of spiders. This mechanism has been long troubled in researchers' minds that how hunting spiders could have an outstanding auditory sensitivity. In this paper, the auditory sensing mechanisms of hunting spiders are studied by theoretical analysis and simulation. The results show that the acoustic impedance can be adjusted by spiders' hairs with particular features to realize the acoustic impedance matching between air and spiders, which could make spiders' hairs easily send signals to the nervous system of spiders, thus significantly promoting the acoustic energy transfer from air to spiders. Both the appropriate length and deflection angle of hairs are critical to determine the acoustic impedance/acoustic transmission coefficient. In parallel, verification test is carried out on an innovative bionic hair array. The experiment result shows that the acoustic impedance is significantly descended by the bionic hair array with the spiders' acoustic hairs' features, which provides a sufficient proof of the acoustic impedance matching by spiders' hairs. Consequently, this work clearly discloses the acoustic sensing mechanism for the extraordinary auditory sensitivity of hunting spiders, which may have a great significance for the development of artificial auditory technology and sound stealth devices. - FNClarivate Analytics Web of Science
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- AULiu, YF
Li, YQ
Novoselov, KS
Fu, SY
- AFYa-Feng Liu
Yuan-Qing Li
Kostya S Novoselov
Shao-Yun Fu
- TIInfluence of spider hair structure on acoustic response
- SOEXTREME MECHANICS LETTERS
- LAEnglish
- DTArticle
- DEFlexible Electronics; Biomimetic; Mechanics
- IDSYSTEMS
- ABIt is well known that spiders have an extraordinary auditory sensitivity. However, significant differences in the acoustic impedance between air and solids (spiders) would reduce the acoustic energy transmitted from air to spiders, and by intuition this might result in a significant decrease in the acoustic sensitivity of spiders. This mechanism has been long troubled in researchers' minds that how hunting spiders could have an outstanding auditory sensitivity. In this paper, the auditory sensing mechanisms of hunting spiders are studied by theoretical analysis and simulation. The results show that the acoustic impedance can be adjusted by spiders' hairs with particular features to realize the acoustic impedance matching between air and spiders, which could make spiders' hairs easily send signals to the nervous system of spiders, thus significantly promoting the acoustic energy transfer from air to spiders. Both the appropriate length and deflection angle of hairs are critical to determine the acoustic impedance/acoustic transmission coefficient. In parallel, verification test is carried out on an innovative bionic hair array. The experiment result shows that the acoustic impedance is significantly descended by the bionic hair array with the spiders' acoustic hairs' features, which provides a sufficient proof of the acoustic impedance matching by spiders' hairs. Consequently, this work clearly discloses the acoustic sensing mechanism for the extraordinary auditory sensitivity of hunting spiders, which may have a great significance for the development of artificial auditory technology and sound stealth devices.
- C1[Liu, Ya-Feng] Southwest Univ, Coll Artificial Intelligence, Chongqing 400715, Peoples R China.
[Liu, Ya-Feng; Li, Yuan-Qing; Fu, Shao-Yun] Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China.
[Liu, Ya-Feng] Chongqing 2D Mat Inst, Chongqing 400714, Peoples R China.
[Novoselov, Kostya S.] Natl Univ Singapore, Inst Funct Intelligent Mat, Bldg S9,4 Sci Dr 2, Singapore 117544, Singapore - C3Southwest University - China; Chongqing University; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPFu, SY (corresponding author), Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China
- FUNational Natural Science Foundation of China [12002190, 12332008, 12272067]; Fundamental Research Funds for the Central Uni-versities [SWU-KQ22029]; Chongqing Natural Science Foundation [CSTB2022NSCQ-MSX1635]; China Postdoctoral Science Foundation [2022M710524]
- FXAcknowledgments The authors are grateful for the financial support of the National Natural Science Foundation of China (Grant Nos. 12002190, 12332008 and 12272067) the Fundamental Research Funds for the Central Uni-versities (Grant No. SWU-KQ22029) , the Chongqing Natural Science Foundation (Grant No. CSTB2022NSCQ-MSX1635) , and the China Postdoctoral Science Foundation (Grant No. 2022M710524) .
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Grzeszczyk, Magdalena; Vaklinova, Kristina; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Konstantin S; Koperski, Maciej Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions LIGHT-SCIENCE & APPLICATIONS, 13 (1), 2024, DOI: 10.1038/s41377-024-01491-5. Abstract | BibTeX | Endnote @article{ISI:001265495000003,
title = {Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions},
author = {Magdalena Grzeszczyk and Kristina Vaklinova and Kenji Watanabe and Takashi Taniguchi and Konstantin S Novoselov and Maciej Koperski},
doi = {10.1038/s41377-024-01491-5},
times_cited = {0},
issn = {2095-5545},
year = {2024},
date = {2024-07-08},
journal = {LIGHT-SCIENCE & APPLICATIONS},
volume = {13},
number = {1},
publisher = {SPRINGERNATURE},
address = {CAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND},
abstract = {Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.},
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Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering. - FNClarivate Analytics Web of Science
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Vaklinova, K
Watanabe, K
Taniguchi, T
Novoselov, KS
Koperski, M
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Kristina Vaklinova
Kenji Watanabe
Takashi Taniguchi
Konstantin S Novoselov
Maciej Koperski
- TIElectroluminescence from pure resonant states in hBN-based vertical tunneling junctions
- SOLIGHT-SCIENCE & APPLICATIONS
- LAEnglish
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- IDNUCLEAR-SPIN QUBITS; BORON-NITRIDE; ELECTRON; EMISSION; DYNAMICS; DIAMOND; CENTERS
- ABDefect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.
- C1[Grzeszczyk, Magdalena; Vaklinova, Kristina; Novoselov, Konstantin S.; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Watanabe, Kenji] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba 3050044, Japan.
[Taniguchi, Takashi] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan.
[Novoselov, Konstantin S.; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore - C3Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National Institute for Materials Science; National Institute for Materials Science; National University of Singapore
- RPGrzeszczyk, M (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Koperski, M (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
- FUMinistry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018- T3-1-005). [EDUN C-33-18-279-V12, MOE2018-T3-1-005]; Ministry of Education (Singapore) through the Research Centre of Excellence program [MOE-T2EP50122-0012]; Ministry of Education, Singapore [FA8655-21-1-7026]; Air Force Office of Scientific Research [19H05790, 20H00354, 21H05233]; Office of Naval Research Global; JSPS KAKENHI
- FXThis project was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018-T3-1-005). This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012). This material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233).DAS:The data that support the findings of this study are openly available at the following https://doi.org/10.58132/B4QQ5E.
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Yoon, Ji Wei; Kumar, Adithya; Kumar, Pawan; Hippalgaonkar, Kedar; Senthilnath, J; Chellappan, Vijila Explainable machine learning to enable high-throughput electrical conductivity optimization and discovery of doped conjugated polymers KNOWLEDGE-BASED SYSTEMS, 295 , 2024, DOI: 10.1016/j.knosys.2024.111812. Abstract | BibTeX | Endnote @article{ISI:001237223200001,
title = {Explainable machine learning to enable high-throughput electrical conductivity optimization and discovery of doped conjugated polymers},
author = {Ji Wei Yoon and Adithya Kumar and Pawan Kumar and Kedar Hippalgaonkar and J Senthilnath and Vijila Chellappan},
doi = {10.1016/j.knosys.2024.111812},
times_cited = {0},
issn = {0950-7051},
year = {2024},
date = {2024-07-08},
journal = {KNOWLEDGE-BASED SYSTEMS},
volume = {295},
publisher = {ELSEVIER},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
abstract = {The combination of high-throughput experimentation techniques and machine learning (ML) has recently ushered in a new era of accelerated material discovery, enabling the identification of materials with cutting-edge properties. However, the measurement of certain physical quantities remains challenging to automate. Specifically, meticulous process control, experimentation and laborious measurements are required to achieve optimal electrical conductivity in doped polymer materials. We propose a ML approach, which relies on readily measured absorbance spectra, to accelerate the workflow associated with measuring electrical conductivity. The classification model accurately classifies samples with a conductivity >similar to 25 to 100 S/cm, achieving a maximum of 100 % accuracy rate. For the subset of highly conductive samples, we employed a regression model to predict their conductivities, yielding an impressive test R-2 value of 0.984. We tested the models with samples of the two highest conductivities (498 and 506 S/cm) and showed that they were able to correctly classify and predict the two extrapolative conductivities at satisfactory levels of errors. The proposed ML-assisted workflow results in an improvement in the efficiency of the conductivity measurements by 89 % of the maximum achievable using our experimental techniques. Furthermore, our approach addressed the common challenge of the lack of explainability in ML models by exploiting bespoke mathematical properties of the descriptors and ML model, allowing us to gain corroborated insights into the spectral influences on conductivity. Through this study, we offer an accelerated pathway for optimizing the properties of doped polymer materials while showcasing the valuable insights that can be derived from purposeful utilization of ML in experimental science.},
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The combination of high-throughput experimentation techniques and machine learning (ML) has recently ushered in a new era of accelerated material discovery, enabling the identification of materials with cutting-edge properties. However, the measurement of certain physical quantities remains challenging to automate. Specifically, meticulous process control, experimentation and laborious measurements are required to achieve optimal electrical conductivity in doped polymer materials. We propose a ML approach, which relies on readily measured absorbance spectra, to accelerate the workflow associated with measuring electrical conductivity. The classification model accurately classifies samples with a conductivity >similar to 25 to 100 S/cm, achieving a maximum of 100 % accuracy rate. For the subset of highly conductive samples, we employed a regression model to predict their conductivities, yielding an impressive test R-2 value of 0.984. We tested the models with samples of the two highest conductivities (498 and 506 S/cm) and showed that they were able to correctly classify and predict the two extrapolative conductivities at satisfactory levels of errors. The proposed ML-assisted workflow results in an improvement in the efficiency of the conductivity measurements by 89 % of the maximum achievable using our experimental techniques. Furthermore, our approach addressed the common challenge of the lack of explainability in ML models by exploiting bespoke mathematical properties of the descriptors and ML model, allowing us to gain corroborated insights into the spectral influences on conductivity. Through this study, we offer an accelerated pathway for optimizing the properties of doped polymer materials while showcasing the valuable insights that can be derived from purposeful utilization of ML in experimental science. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUYoon, JW
Kumar, A
Kumar, P
Hippalgaonkar, K
Senthilnath, J
Chellappan, V
- AFJi Wei Yoon
Adithya Kumar
Pawan Kumar
Kedar Hippalgaonkar
J Senthilnath
Vijila Chellappan
- TIExplainable machine learning to enable high-throughput electrical conductivity optimization and discovery of doped conjugated polymers
- SOKNOWLEDGE-BASED SYSTEMS
- LAEnglish
- DTArticle
- DEExplainable Machine Learning; High -throughput Experimentation; Doped Conjugated Polymers; Data -driven Feature Selection; AI -accelerated Materials Discovery; AI -enabled Materials Optimization; Spectral Analysis
- IDBLENDS
- ABThe combination of high-throughput experimentation techniques and machine learning (ML) has recently ushered in a new era of accelerated material discovery, enabling the identification of materials with cutting-edge properties. However, the measurement of certain physical quantities remains challenging to automate. Specifically, meticulous process control, experimentation and laborious measurements are required to achieve optimal electrical conductivity in doped polymer materials. We propose a ML approach, which relies on readily measured absorbance spectra, to accelerate the workflow associated with measuring electrical conductivity. The classification model accurately classifies samples with a conductivity >similar to 25 to 100 S/cm, achieving a maximum of 100 % accuracy rate. For the subset of highly conductive samples, we employed a regression model to predict their conductivities, yielding an impressive test R-2 value of 0.984. We tested the models with samples of the two highest conductivities (498 and 506 S/cm) and showed that they were able to correctly classify and predict the two extrapolative conductivities at satisfactory levels of errors. The proposed ML-assisted workflow results in an improvement in the efficiency of the conductivity measurements by 89 % of the maximum achievable using our experimental techniques. Furthermore, our approach addressed the common challenge of the lack of explainability in ML models by exploiting bespoke mathematical properties of the descriptors and ML model, allowing us to gain corroborated insights into the spectral influences on conductivity. Through this study, we offer an accelerated pathway for optimizing the properties of doped polymer materials while showcasing the valuable insights that can be derived from purposeful utilization of ML in experimental science.
- C1[Yoon, Ji Wei; Senthilnath, J.] ASTAR, Inst Infocomm Res I2R, 1 Fusionopolis Way,21-01 Connexis South Tower, Singapore 138632, Singapore.
[Kumar, Adithya; Kumar, Pawan; Hippalgaonkar, Kedar; Chellappan, Vijila] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,08-03 Innovis, Singapore 138634, Singapore.
[Hippalgaonkar, Kedar] Nanyang Technol Univ, Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore.
[Chellappan, Vijila] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore - C3Agency for Science Technology & Research (A*STAR); A*STAR - Institute for Infocomm Research (I2R); Agency for Science Technology & Research (A*STAR); A*STAR - Institute of Materials Research & Engineering (IMRE); Nanyang Technological University; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPYoon, JW (corresponding author), ASTAR, Inst Infocomm Res I2R, 1 Fusionopolis Way,21-01 Connexis South Tower, Singapore 138632, Singapore
- FUAccelerated Materials Development for Manufacturing Program at A*STAR via the AME Programmatic Fund by the Agency for Science, Technology and Research, Singapore [A1898b0043]
- FXThis study was supported by the Accelerated Materials Development for Manufacturing Program at A*STAR via the AME Programmatic Fund by the Agency for Science, Technology and Research, Singapore under Grant No. A1898b0043.
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Al-Maeeni, Abdalaziz; Lazarev, Mikhail; Kazeev, Nikita; Novoselov, Kostya S; Ustyuzhanin, Andrey Review on automated 2D material design 2D MATERIALS, 11 (3), 2024, DOI: 10.1088/2053-1583/ad4661. Abstract | BibTeX | Endnote @article{ISI:001248928500001,
title = {Review on automated 2D material design},
author = {Abdalaziz Al-Maeeni and Mikhail Lazarev and Nikita Kazeev and Kostya S Novoselov and Andrey Ustyuzhanin},
doi = {10.1088/2053-1583/ad4661},
times_cited = {0},
issn = {2053-1583},
year = {2024},
date = {2024-07-01},
journal = {2D MATERIALS},
volume = {11},
number = {3},
publisher = {IOP Publishing Ltd},
address = {TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND},
abstract = {Deep learning (DL) methodologies have led to significant advancements in various domains, facilitating intricate data analysis and enhancing predictive accuracy and data generation quality through complex algorithms. In materials science, the extensive computational demands associated with high-throughput screening techniques such as density functional theory, coupled with limitations in laboratory production, present substantial challenges for material research. DL techniques are poised to alleviate these challenges by reducing the computational costs of simulating material properties and by generating novel materials with desired attributes. This comprehensive review document explores the current state of DL applications in materials design, with a particular emphasis on two-dimensional materials. The article encompasses an in-depth exploration of data-driven approaches in both forward and inverse design within the realm of materials science.},
keywords = {},
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Deep learning (DL) methodologies have led to significant advancements in various domains, facilitating intricate data analysis and enhancing predictive accuracy and data generation quality through complex algorithms. In materials science, the extensive computational demands associated with high-throughput screening techniques such as density functional theory, coupled with limitations in laboratory production, present substantial challenges for material research. DL techniques are poised to alleviate these challenges by reducing the computational costs of simulating material properties and by generating novel materials with desired attributes. This comprehensive review document explores the current state of DL applications in materials design, with a particular emphasis on two-dimensional materials. The article encompasses an in-depth exploration of data-driven approaches in both forward and inverse design within the realm of materials science. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUAl-Maeeni, A
Lazarev, M
Kazeev, N
Novoselov, KS
Ustyuzhanin, A
- AFAbdalaziz Al-Maeeni
Mikhail Lazarev
Nikita Kazeev
Kostya S Novoselov
Andrey Ustyuzhanin
- TIReview on automated 2D material design
- SO2D MATERIALS
- LAEnglish
- DTArticle
- DEDeep Learning; Material Science; 2D Materials; Materials Generation; Inverse Design
- IDINVERSE PROBLEMS; STRUCTURE PREDICTION; NEURAL-NETWORKS; CRYSTAL; OPTIMIZATION; ALGORITHM; FIELD; FERROMAGNETISM; REPRESENTATION; EXFOLIATION
- ABDeep learning (DL) methodologies have led to significant advancements in various domains, facilitating intricate data analysis and enhancing predictive accuracy and data generation quality through complex algorithms. In materials science, the extensive computational demands associated with high-throughput screening techniques such as density functional theory, coupled with limitations in laboratory production, present substantial challenges for material research. DL techniques are poised to alleviate these challenges by reducing the computational costs of simulating material properties and by generating novel materials with desired attributes. This comprehensive review document explores the current state of DL applications in materials design, with a particular emphasis on two-dimensional materials. The article encompasses an in-depth exploration of data-driven approaches in both forward and inverse design within the realm of materials science.
- C1[Al-Maeeni, Abdalaziz; Lazarev, Mikhail] HSE Univ, Myasnitskaya Ulitsa 20, Moscow 101000, Russia.
[Ustyuzhanin, Andrey] Constructor Univ, D-28759 Bremen, Germany.
[Kazeev, Nikita; Novoselov, Kostya S.; Ustyuzhanin, Andrey] Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore - C3HSE University (National Research University Higher School of Economics); National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPUstyuzhanin, A (corresponding author), Constructor Univ, D-28759 Bremen, Germany; Ustyuzhanin, A (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore
- FUMinistry of Education, Singapore [EDUNC-33-18-279-V12]; Royal Society (UK) [RSRPR190000]
- FXThe article/review was prepared within the framework of the project 'Mirror Laboratories' HSE University, RF. This research / project is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM, project No. EDUNC-33-18-279-V12). K.S.N. is grateful to the Royal Society (UK, grant number RSRPR190000) for support.
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Noori, K; Olsen, B A; Rodin, A Activation in solid ionic electrolytes PHYSICAL REVIEW RESEARCH, 6 (2), 2024, DOI: 10.1103/PhysRevResearch.6.023322. Abstract | BibTeX | Endnote @article{ISI:001255082300010,
title = {Activation in solid ionic electrolytes},
author = {K Noori and B A Olsen and A Rodin},
doi = {10.1103/PhysRevResearch.6.023322},
times_cited = {0},
year = {2024},
date = {2024-06-24},
journal = {PHYSICAL REVIEW RESEARCH},
volume = {6},
number = {2},
publisher = {AMER PHYSICAL SOC},
address = {ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA},
abstract = {Ionic conductivity in solid electrolytes is commonly expected to exhibit Arrhenius dependence on temperature, determined by a well-defined activation energy. Consequently, a standard approach involves calculating this energy using quasi-static methods and using the Arrhenius form to extrapolate the numerical results from one temperature range to another. Despite the ubiquity of this Arrhenius-based modeling, disagreements frequently arise between theory and experiment, and even between different theoretical studies. By considering a tractable minimal model, we elucidate the reason behind the breakdown of the Arrhenius conductivity form. This breakdown is driven by nontrivial phase-space boundaries between conducting and nonconducting regimes, and depends on the kinetic properties of the system.},
keywords = {},
pubstate = {published},
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Ionic conductivity in solid electrolytes is commonly expected to exhibit Arrhenius dependence on temperature, determined by a well-defined activation energy. Consequently, a standard approach involves calculating this energy using quasi-static methods and using the Arrhenius form to extrapolate the numerical results from one temperature range to another. Despite the ubiquity of this Arrhenius-based modeling, disagreements frequently arise between theory and experiment, and even between different theoretical studies. By considering a tractable minimal model, we elucidate the reason behind the breakdown of the Arrhenius conductivity form. This breakdown is driven by nontrivial phase-space boundaries between conducting and nonconducting regimes, and depends on the kinetic properties of the system. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUNoori, K
Olsen, BA
Rodin, A
- AFK Noori
B A Olsen
A Rodin
- TIActivation in solid ionic electrolytes
- SOPHYSICAL REVIEW RESEARCH
- LAEnglish
- DTArticle
- IDSUPERIONIC CONDUCTOR; INSIGHTS
- ABIonic conductivity in solid electrolytes is commonly expected to exhibit Arrhenius dependence on temperature, determined by a well-defined activation energy. Consequently, a standard approach involves calculating this energy using quasi-static methods and using the Arrhenius form to extrapolate the numerical results from one temperature range to another. Despite the ubiquity of this Arrhenius-based modeling, disagreements frequently arise between theory and experiment, and even between different theoretical studies. By considering a tractable minimal model, we elucidate the reason behind the breakdown of the Arrhenius conductivity form. This breakdown is driven by nontrivial phase-space boundaries between conducting and nonconducting regimes, and depends on the kinetic properties of the system.
- C3Yale NUS College; National University of Singapore; National University of Singapore
- RPNoori, K (corresponding author), NUS Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore
- FXA.R. and K.N. acknowledge the National Research Foun- dation, Prime Minister Office, Singapore, under its Medium Sized Centre Programme. A.R. acknowledges support by Yale -NUS College (through a start-up grant) . B.A.O. ac- knowledges support from the M. J. Murdock Charitable Trust.
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- DI10.1103/PhysRevResearch.6.023322
- PG7
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- SCPhysics
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Yi, Kongyang; Wu, Yao; An, Liheng; Deng, Ya; Duan, Ruihuan; Yang, Jiefu; Zhu, Chao; Gao, Weibo; Liu, Zheng Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials ADVANCED MATERIALS, 2024, DOI: 10.1002/adma.202403494. Abstract | BibTeX | Endnote @article{ISI:001251534500001,
title = {Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials},
author = {Kongyang Yi and Yao Wu and Liheng An and Ya Deng and Ruihuan Duan and Jiefu Yang and Chao Zhu and Weibo Gao and Zheng Liu},
doi = {10.1002/adma.202403494},
times_cited = {0},
issn = {0935-9648},
year = {2024},
date = {2024-06-22},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-kappa properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-kappa properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUYi, KY
Wu, Y
An, LH
Deng, Y
Duan, RH
Yang, JF
Zhu, C
Gao, WB
Liu, Z
- AFKongyang Yi
Yao Wu
Liheng An
Ya Deng
Ruihuan Duan
Jiefu Yang
Chao Zhu
Weibo Gao
Zheng Liu
- TIVan der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DE2D Materials; Ambient Stability; Encapsulation; Field-effect Transistors; Liquid Metal
- IDEXFOLIATED BLACK PHOSPHORUS; EFFECTIVE PASSIVATION; DEGRADATION; SCALE; FILMS
- ABThe ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-kappa properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches.
- C1[Yi, Kongyang; Wu, Yao; Deng, Ya; Duan, Ruihuan; Yang, Jiefu; Zhu, Chao; Liu, Zheng] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore.
[An, Liheng; Gao, Weibo] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore - C3Nanyang Technological University; Nanyang Technological University
- RPLiu, Z (corresponding author), Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
- FUNational Research Foundation, Singapore, under its Competitive Research Programme (CRP) [NRF-CRP22-2019-0007, NRF-CRP22-2019-0004, NRF2020-NRF-ISF004-3520]; Ministry of Education, Singapore, under its Research Centre of Excellence [EDUNC-33-18-279-V12]; A*STAR under its AME IRG Grant [A2083c0052]; MTC Programmatic Grant [M23M2b0056]
- FXZ.L. acknowledges the support from National Research Foundation, Singapore, under its Competitive Research Programme (CRP) (NRF-CRP22-2019-0007 and NRF-CRP22-2019-0004), under its NRF-ISF joint research program (NRF2020-NRF-ISF004-3520). This research is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (Project No. EDUNC-33-18-279-V12). This research is also supported by A*STAR under its AME IRG Grant (Project No. A2083c0052) and MTC Programmatic Grant (M23M2b0056).
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Gould, Tim; Chan, Bun; Dale, Stephen G; Vuckovic, Stefan Identifying and embedding transferability in data-driven representations of chemical space CHEMICAL SCIENCE, 2024, DOI: 10.1039/d4sc02358g. Abstract | BibTeX | Endnote @article{ISI:001251191000001,
title = {Identifying and embedding transferability in data-driven representations of chemical space},
author = {Tim Gould and Bun Chan and Stephen G Dale and Stefan Vuckovic},
doi = {10.1039/d4sc02358g},
times_cited = {0},
issn = {2041-6520},
year = {2024},
date = {2024-06-21},
journal = {CHEMICAL SCIENCE},
publisher = {ROYAL SOC CHEMISTRY},
address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND},
abstract = {Transferability, especially in the context of model generalization, is a paradigm of all scientific disciplines. However, the rapid advancement of machine learned model development threatens this paradigm, as it can be difficult to understand how transferability is embedded (or missed) in complex models developed using large training data sets. Two related open problems are how to identify, without relying on human intuition, what makes training data transferable; and how to embed transferability into training data. To solve both problems for ab initio chemical modelling, an indispensable tool in everyday chemistry research, we introduce a transferability assessment tool (TAT) and demonstrate it on a controllable data-driven model for developing density functional approximations (DFAs). We reveal that human intuition in the curation of training data introduces chemical biases that can hamper the transferability of data-driven DFAs. We use our TAT to motivate three transferability principles; one of which introduces the key concept of transferable diversity. Finally, we propose data curation strategies for general-purpose machine learning models in chemistry that identify and embed the transferability principles.},
keywords = {},
pubstate = {published},
tppubtype = {article}
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Transferability, especially in the context of model generalization, is a paradigm of all scientific disciplines. However, the rapid advancement of machine learned model development threatens this paradigm, as it can be difficult to understand how transferability is embedded (or missed) in complex models developed using large training data sets. Two related open problems are how to identify, without relying on human intuition, what makes training data transferable; and how to embed transferability into training data. To solve both problems for ab initio chemical modelling, an indispensable tool in everyday chemistry research, we introduce a transferability assessment tool (TAT) and demonstrate it on a controllable data-driven model for developing density functional approximations (DFAs). We reveal that human intuition in the curation of training data introduces chemical biases that can hamper the transferability of data-driven DFAs. We use our TAT to motivate three transferability principles; one of which introduces the key concept of transferable diversity. Finally, we propose data curation strategies for general-purpose machine learning models in chemistry that identify and embed the transferability principles. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUGould, T
Chan, B
Dale, SG
Vuckovic, S
- AFTim Gould
Bun Chan
Stephen G Dale
Stefan Vuckovic
- TIIdentifying and embedding transferability in data-driven representations of chemical space
- SOCHEMICAL SCIENCE
- LAEnglish
- DTArticle
- IDDENSITY-FUNCTIONAL THEORY; EXCHANGE; THERMOCHEMISTRY; APPROXIMATIONS; DFT; AI
- ABTransferability, especially in the context of model generalization, is a paradigm of all scientific disciplines. However, the rapid advancement of machine learned model development threatens this paradigm, as it can be difficult to understand how transferability is embedded (or missed) in complex models developed using large training data sets. Two related open problems are how to identify, without relying on human intuition, what makes training data transferable; and how to embed transferability into training data. To solve both problems for ab initio chemical modelling, an indispensable tool in everyday chemistry research, we introduce a transferability assessment tool (TAT) and demonstrate it on a controllable data-driven model for developing density functional approximations (DFAs). We reveal that human intuition in the curation of training data introduces chemical biases that can hamper the transferability of data-driven DFAs. We use our TAT to motivate three transferability principles; one of which introduces the key concept of transferable diversity. Finally, we propose data curation strategies for general-purpose machine learning models in chemistry that identify and embed the transferability principles.
- C1[Gould, Tim; Dale, Stephen G.] Griffith Univ, Queensland Micro & Nanotechnol Ctr, Nathan, Qld 4111, Australia.
[Chan, Bun] Nagasaki Univ, Grad Sch Engn, Bunkyo 1-14, Nagasaki 8528521, Japan.
[Dale, Stephen G.] Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore.
[Vuckovic, Stefan] Univ Fribourg, Dept Chem, Fribourg, Switzerland - C3Griffith University; Nagasaki University; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; University of Fribourg
- RPVuckovic, S (corresponding author), Univ Fribourg, Dept Chem, Fribourg, Switzerland
- FUSchweizerischer Nationalfonds zur Frderung der Wissenschaftlichen Forschung [TMSGI2_211246]; SNSF Starting Grant project [DP200100033]; Australian Research Council (ARC) Discovery Project [EDUNC-33-18-279-V12]; Ministry of Education, Singapore [22H02080, Q23266]; Japan Society for the Promotion of Science
- FXSV acknowledges funding from the SNSF Starting Grant project (TMSGI2_211246). TG was supported by an Australian Research Council (ARC) Discovery Project (DP200100033) and Future Fellowship (FT210100663). SD was supported by an Australian Research Council (ARC) Discovery Project (DP200100033) and by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials, with Project No. EDUNC-33-18-279-V12. BC acknowledges research funding from Japan Society for the Promotion of Science (22H02080) and generous grants of computer time from the RIKEN Information Systems Division (Q23266), Japan.
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- PATHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
- SN2041-6520
- J9CHEM SCI
- JIChem. Sci.
- PDJUN 21
- PY2024
- DI10.1039/d4sc02358g
- PG12
- WCChemistry, Multidisciplinary
- SCChemistry
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Zhang, Hanwen; Fu, Jianhui; Carvalho, Alexandra; Poh, Eng Tuan; Chung, Jing-Yang; Feng, Minjun; Chen, Yinzhu; Wang, Bo; Shang, Qiuyu; Yang, Hengxing; Zhang, Zheng; Lim, Sharon Xiaodai; Gao, Weibo; Gradecak, Silvija; Qiu, Cheng-Wei; Lu, Junpeng; He, Chunnian; Sum, Tze Chien; Sow, Chorng Haur Programmable Interfacial Band Configuration in WS2/Bi2O2Se Heterojunctions ACS NANO, 2024, DOI: 10.1021/acsnano.4c02496. Abstract | BibTeX | Endnote @article{ISI:001250620200001,
title = {Programmable Interfacial Band Configuration in WS_{2}/Bi_{2}O_{2}Se Heterojunctions},
author = {Hanwen Zhang and Jianhui Fu and Alexandra Carvalho and Eng Tuan Poh and Jing-Yang Chung and Minjun Feng and Yinzhu Chen and Bo Wang and Qiuyu Shang and Hengxing Yang and Zheng Zhang and Sharon Xiaodai Lim and Weibo Gao and Silvija Gradecak and Cheng-Wei Qiu and Junpeng Lu and Chunnian He and Tze Chien Sum and Chorng Haur Sow},
doi = {10.1021/acsnano.4c02496},
times_cited = {0},
issn = {1936-0851},
year = {2024},
date = {2024-06-18},
journal = {ACS NANO},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
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van der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUZhang, HW
Fu, JH
Carvalho, A
Poh, ET
Chung, JY
Feng, MJ
Chen, YZ
Wang, B
Shang, QY
Yang, HX
Zhang, Z
Lim, SX
Gao, WB
Gradecak, S
Qiu, CW
Lu, JP
He, CN
Sum, TC
Sow, CH
- AFHanwen Zhang
Jianhui Fu
Alexandra Carvalho
Eng Tuan Poh
Jing-Yang Chung
Minjun Feng
Yinzhu Chen
Bo Wang
Qiuyu Shang
Hengxing Yang
Zheng Zhang
Sharon Xiaodai Lim
Weibo Gao
Silvija Gradecak
Cheng-Wei Qiu
Junpeng Lu
Chunnian He
Tze Chien Sum
Chorng Haur Sow
- TIProgrammable Interfacial Band Configuration in WS2/Bi2O2Se Heterojunctions
- SOACS NANO
- LAEnglish
- DTArticle
- DEHeterojunctions; 2D Materials; Band Alignment; Fluorescencedesign; Laser Modification
- IDWAALS; PHOSPHORENE
- ABvan der Waals heterojunctions based on transition-metal dichalcogenides (TMDs) offer advanced strategies for manipulating light-emitting and light-harvesting behaviors. A crucial factor determining the light-material interaction is in the band alignment at the heterojunction interface, particularly the distinctions between type-I and type-II alignments. However, altering the band alignment from one type to another without changing the constituent materials is exceptionally difficult. Here, utilizing Bi2O2Se with a thickness-dependent band gap as a bottom layer, we present an innovative strategy for engineering interfacial band configurations in WS2/Bi2O2Se heterojunctions. In particular, we achieve tuning of the band alignment from type-I (Bi2O2Se straddling WS2) to type-II and finally to type-I (WS2 straddling Bi2O2Se) by increasing the thickness of the Bi2O2Se bottom layer from monolayer to multilayer. We verified this band architecture conversion using steady-state and transient spectroscopy as well as density functional theory calculations. Using this material combination, we further design a sophisticated band architecture incorporating both type-I (WS2 straddles Bi2O2Se, fluorescence-quenched) and type-I (Bi2SeO5 straddles WS2, fluorescence-recovered) alignments in one sample through focused laser beam (FLB). By programming the FLB trajectory, we achieve a predesigned localized fluorescence micropattern on WS2 without changing its intrinsic atomic structure. This effective band architecture design strategy represents a significant leap forward in harnessing the potential of TMD heterojunctions for multifunctional photonic applications.
- C3TJU-NUS Joint Institute; Tianjin University; National University of Singapore; Nanyang Technological University; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; Southeast University - China; Agency for Science Technology & Research (A*STAR); A*STAR - Institute of Materials Research & Engineering (IMRE); National University of Singapore; Tianjin University
- RPHe, CN (corresponding author), Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Int Campus, Fuzhou 350207, Peoples R China; Sow, CH (corresponding author), Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore; Sum, TC (corresponding author), Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore; He, CN (corresponding author), Tianjin Univ, Sch Mat Sci & Engn, Tianjin Key Lab Composite & Funct Mat, Tianjin 300350, Peoples R China
- FXThe computations were partially carried out at the National Supercomputer Center in Tianjin and partially carried out on the resources of the National Supercomputing Centre, Singapore (https://www.nscc.sg). A.C. acknowledges the support from the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials, National University of Singapore (I-FIM, project no. EDUNC-33-18-279-V12). C.W.Q. acknowledges financial support from the NRF, Prime Minister's Office, Singapore under the Competitive Research Program Award (NRF-CRP26-2021-0063). The authors acknowledge the technical and scientific support provided by the Electron Microscopy Facility (EMF @NUS).
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- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1936-0851
- J9ACS NANO
- JIACS Nano
- PDJUN 18
- PY2024
- DI10.1021/acsnano.4c02496
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- WCChemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
- SCChemistry; Science & Technology - Other Topics; Materials Science
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Latychevskaia, T; Bandurin, D A; Novoselov, K S A new family of septuple-layer 2D materials of MoSi2N4-like crystals NATURE REVIEWS PHYSICS, 2024, DOI: 10.1038/s42254-024-00728-x. Abstract | BibTeX | Endnote @article{ISI:001250865000001,
title = {A new family of septuple-layer 2D materials of MoSi_{2}N_{4}-like crystals},
author = {T Latychevskaia and D A Bandurin and K S Novoselov},
doi = {10.1038/s42254-024-00728-x},
times_cited = {0},
year = {2024},
date = {2024-06-17},
journal = {NATURE REVIEWS PHYSICS},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Recently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been obtained with chemical vapour deposition growth. It can be considered as MoN2 crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). The discovery of this material has spurred on research into its electronic properties, and also to the prediction and classification of dozens of other members of the family. Whereas the originally synthesized MoSi2N4 is a semiconductor, some of the members of the family are also metallic, some are magnetic, some showing remarkable properties, such as very high room-temperature electron mobilities. The major interest towards these materials is coming from the septuple-layer structure, which allows not only multiple crystal phases but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms. In this Review, we provide a profile of this new family of materials and discuss the possibilities they open up towards new physics and applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
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Recently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been obtained with chemical vapour deposition growth. It can be considered as MoN2 crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). The discovery of this material has spurred on research into its electronic properties, and also to the prediction and classification of dozens of other members of the family. Whereas the originally synthesized MoSi2N4 is a semiconductor, some of the members of the family are also metallic, some are magnetic, some showing remarkable properties, such as very high room-temperature electron mobilities. The major interest towards these materials is coming from the septuple-layer structure, which allows not only multiple crystal phases but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms. In this Review, we provide a profile of this new family of materials and discuss the possibilities they open up towards new physics and applications. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULatychevskaia, T
Bandurin, DA
Novoselov, KS
- AFT Latychevskaia
D A Bandurin
K S Novoselov
- TIA new family of septuple-layer 2D materials of MoSi2N4-like crystals
- SONATURE REVIEWS PHYSICS
- LAEnglish
- DTArticle
- IDTRANSITION-METAL BORIDES; 2-DIMENSIONAL MATERIALS; MONOLAYER; PIEZOELECTRICITY; PREDICTION
- ABRecently synthesized MoSi2N4 is the first septuple-layer two-dimensional material, which does not naturally occur as a layered crystal, and has been obtained with chemical vapour deposition growth. It can be considered as MoN2 crystal (with a crystal structure of MoS2) intercalating Si2N2 two-dimensional layer (with the structure similar to InSe). The discovery of this material has spurred on research into its electronic properties, and also to the prediction and classification of dozens of other members of the family. Whereas the originally synthesized MoSi2N4 is a semiconductor, some of the members of the family are also metallic, some are magnetic, some showing remarkable properties, such as very high room-temperature electron mobilities. The major interest towards these materials is coming from the septuple-layer structure, which allows not only multiple crystal phases but also complex compositions, in particular those with broken mirror-reflection symmetry against the layer of metal atoms. In this Review, we provide a profile of this new family of materials and discuss the possibilities they open up towards new physics and applications.
- C1[Latychevskaia, T.] Paul Scherrer Inst, Villigen, Switzerland.
[Bandurin, D. A.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore.
[Novoselov, K. S.] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore - C3Swiss Federal Institutes of Technology Domain; Paul Scherrer Institute; National University of Singapore; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPBandurin, DA (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore; Novoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore
- FUSwiss National Foundation Research Grant [200021_197107]; Ministry of Education, Singapore [EDUNC-33-18-279-V12]; Royal Society (UK) [RSRPR190000]; National Research Foundation, Singapore under its AI Singapore Programme [AISG3-RP-2022-028]
- FXT.L. thanks Swiss National Foundation Research Grant 200021_197107. D.A.B. and K.S.N. acknowledge support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM, project number EDUNC-33-18-279-V12). K.S.N. acknowledges support from the Royal Society (UK, grant number RSRPR190000) and the National Research Foundation, Singapore under its AI Singapore Programme (AISG Award No: AISG3-RP-2022-028).
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- PUNATURE PORTFOLIO
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- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- J9NAT REV PHYS
- JINat. Rev. Phys.
- PDJUN 17
- PY2024
- DI10.1038/s42254-024-00728-x
- PG13
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- SCPhysics
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- UTWOS:001250865000001
- ER
- EF
|
Li, Qingxin; Chen, Yiwei; Wei, Lingnan; Chen, Hong; Huang, Yan; Zhu, Yujian; Zhu, Wang; An, Dongdong; Song, Junwei; Gan, Qikang; Zhang, Qi; Watanabe, Kenji; Taniguchi, Takashi; Shi, Xiaoyang; Novoselov, Kostya S; Wang, Rui; Yu, Geliang; Wang, Lei Strongly coupled magneto-exciton condensates in large-angle twisted double bilayer graphene NATURE COMMUNICATIONS, 15 (1), 2024, DOI: 10.1038/s41467-024-49406-7. Abstract | BibTeX | Endnote @article{ISI:001249227800020,
title = {Strongly coupled magneto-exciton condensates in large-angle twisted double bilayer graphene},
author = {Qingxin Li and Yiwei Chen and Lingnan Wei and Hong Chen and Yan Huang and Yujian Zhu and Wang Zhu and Dongdong An and Junwei Song and Qikang Gan and Qi Zhang and Kenji Watanabe and Takashi Taniguchi and Xiaoyang Shi and Kostya S Novoselov and Rui Wang and Geliang Yu and Lei Wang},
doi = {10.1038/s41467-024-49406-7},
times_cited = {0},
year = {2024},
date = {2024-06-13},
journal = {NATURE COMMUNICATIONS},
volume = {15},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Excitons, pairs of electrons and holes, undergo a Bose-Einstein condensation at low temperatures. An important platform to study excitons is double-layer two-dimensional electron gases, with two parallel planes of electrons and holes separated by a thin insulating layer. Lowering this separation (d) strengthens the exciton binding energy, however, leads to the undesired interlayer tunneling, resulting in annihilation of excitons. Here, we report the observation of a sequences of robust exciton condensates (ECs) in double bilayer graphene twisted to similar to 10 degrees with no insulating mid-layer. The large momentum mismatch between two graphene layers suppresses interlayer tunneling, reaching a d similar to 0.334 nm. Measuring the bulk and edge transport, we find incompressible states corresponding to ECs when both layers are in half-filled N = 0, 1 Landau levels (LLs). Theoretical calculations suggest that the low-energy charged excitation of ECs can be meron-antimeron or particle-hole pair, which relies on both LL index and carrier type. Our results establish a novel platform with extreme coupling strength for studying quantum bosonic phase.},
keywords = {},
pubstate = {published},
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Excitons, pairs of electrons and holes, undergo a Bose-Einstein condensation at low temperatures. An important platform to study excitons is double-layer two-dimensional electron gases, with two parallel planes of electrons and holes separated by a thin insulating layer. Lowering this separation (d) strengthens the exciton binding energy, however, leads to the undesired interlayer tunneling, resulting in annihilation of excitons. Here, we report the observation of a sequences of robust exciton condensates (ECs) in double bilayer graphene twisted to similar to 10 degrees with no insulating mid-layer. The large momentum mismatch between two graphene layers suppresses interlayer tunneling, reaching a d similar to 0.334 nm. Measuring the bulk and edge transport, we find incompressible states corresponding to ECs when both layers are in half-filled N = 0, 1 Landau levels (LLs). Theoretical calculations suggest that the low-energy charged excitation of ECs can be meron-antimeron or particle-hole pair, which relies on both LL index and carrier type. Our results establish a novel platform with extreme coupling strength for studying quantum bosonic phase. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULi, QX
Chen, YW
Wei, LN
Chen, H
Huang, Y
Zhu, YJ
Zhu, W
An, DD
Song, JW
Gan, QK
Zhang, Q
Watanabe, K
Taniguchi, T
Shi, XY
Novoselov, KS
Wang, R
Yu, GL
Wang, L
- AFQingxin Li
Yiwei Chen
Lingnan Wei
Hong Chen
Yan Huang
Yujian Zhu
Wang Zhu
Dongdong An
Junwei Song
Qikang Gan
Qi Zhang
Kenji Watanabe
Takashi Taniguchi
Xiaoyang Shi
Kostya S Novoselov
Rui Wang
Geliang Yu
Lei Wang
- TIStrongly coupled magneto-exciton condensates in large-angle twisted double bilayer graphene
- SONATURE COMMUNICATIONS
- LAEnglish
- DTArticle
- IDBOSE-EINSTEIN CONDENSATION; EXCITON CONDENSATION; QUANTUM; COHERENCE; STATE; PHASE
- ABExcitons, pairs of electrons and holes, undergo a Bose-Einstein condensation at low temperatures. An important platform to study excitons is double-layer two-dimensional electron gases, with two parallel planes of electrons and holes separated by a thin insulating layer. Lowering this separation (d) strengthens the exciton binding energy, however, leads to the undesired interlayer tunneling, resulting in annihilation of excitons. Here, we report the observation of a sequences of robust exciton condensates (ECs) in double bilayer graphene twisted to similar to 10 degrees with no insulating mid-layer. The large momentum mismatch between two graphene layers suppresses interlayer tunneling, reaching a d similar to 0.334 nm. Measuring the bulk and edge transport, we find incompressible states corresponding to ECs when both layers are in half-filled N = 0, 1 Landau levels (LLs). Theoretical calculations suggest that the low-energy charged excitation of ECs can be meron-antimeron or particle-hole pair, which relies on both LL index and carrier type. Our results establish a novel platform with extreme coupling strength for studying quantum bosonic phase.
- C1[Li, Qingxin; Chen, Yiwei; Wei, Lingnan; Chen, Hong; Huang, Yan; Zhu, Yujian; Zhu, Wang; An, Dongdong; Song, Junwei; Gan, Qikang; Zhang, Qi; Wang, Rui; Yu, Geliang; Wang, Lei] Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.
[Watanabe, Kenji] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan.
[Taniguchi, Takashi] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan.
[Shi, Xiaoyang] SUNY Albany, Coll Engn & Appl Sci, Environm & Sustainable Engn, Albany, NY 12222 USA.
[Novoselov, Kostya S.] Natl Univ Singapore, Inst Funct Intelligent Mat, Bldg S9,4 Sci Dr 2, Singapore 117544, Singapore - C3Nanjing University; National Institute for Materials Science; National Institute for Materials Science; State University of New York (SUNY) System; State University of New York (SUNY) Albany; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore
- RPWang, R (corresponding author), Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China; Shi, XY (corresponding author), SUNY Albany, Coll Engn & Appl Sci, Environm & Sustainable Engn, Albany, NY 12222 USA
- FUNational Key Projects for Research and Development of China (Grant Nos.2022YFA120470, 2021YFA1400400), National Natural Science Foundation of China (Grant No. 12074173)and Program for Innovative Talents and Entrepreneur in Jiangsu(Grant No.JSSCTD202101). [2022YFA120470, 2021YFA1400400]; National Key Projects for Research and Development of China [11974169]; National Natural Science Foundation of China [BK20220066]; Natural Science Foundation of Jiangsu Province [No.JSSCTD202101]; Program for Innovative Talents and Entrepreneur in Jiangsu [20H00354, 23H02052]; JSPS KAKENHI [EDUNC-33-18-279-V12]; A3 Foresight by JSPS [RSRP R 190000]; Ministry of Education, Singapore (Research Centre of Excellence award); Royal Society (UK)
- FXL.W. acknowledges the National Key Projects for Research and Development of China (Grant Nos. 2022YFA120470, 2021YFA1400400), National Natural Science Foundation of China (Grant No. 12074173), Natural Science Foundation of Jiangsu Province (Grant No. BK20220066) and Program for Innovative Talents and Entrepreneur in Jiangsu(Grant No.JSSCTD202101). K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Numbers 20H00354 and 23H02052) and A3 Foresight by JSPS. K.S.N. is grateful to the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials, I-FIM, project No. EDUNC-33-18-279-V12) and to the Royal Society (UK, grant number RSRP R 190000) for support. G.Y. acknowledges the National Natural Science Foundation of China (Grant No. 11974169) and the Natural Science Foundation of Jiangsu Province (Grant No. BK20220066).
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- PUNATURE PORTFOLIO
- PIBERLIN
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
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- JINat. Commun.
- PDJUN 13
- PY2024
- VL15
- DI10.1038/s41467-024-49406-7
- PG8
- WCMultidisciplinary Sciences
- SCScience & Technology - Other Topics
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|
Trushin, Maxim; Peng, Liangtao; Sharma, Gargee; Vignale, Giovanni; Adam, Shaffique High conductivity from cross-band electron pairing in flat-band systems PHYSICAL REVIEW B, 109 (24), 2024, DOI: 10.1103/PhysRevB.109.245118. Abstract | BibTeX | Endnote @article{ISI:001247474400001,
title = {High conductivity from cross-band electron pairing in flat-band systems},
author = {Maxim Trushin and Liangtao Peng and Gargee Sharma and Giovanni Vignale and Shaffique Adam},
doi = {10.1103/PhysRevB.109.245118},
times_cited = {0},
issn = {2469-9950},
year = {2024},
date = {2024-06-13},
journal = {PHYSICAL REVIEW B},
volume = {109},
number = {24},
publisher = {AMER PHYSICAL SOC},
address = {ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA},
abstract = {Electrons in condensed matter may transition into a variety of broken-symmetry phase states due to electronelectron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify the phase states theoretically possible in a given setting. Here, we explore electron-electron attraction in a two-band system comprising symmetric conduction and valence bands touching each other at a single point. We assume a mean-field pairing between the electrons having opposite spins, momenta, and in contrast to the conventional superconducting pairing, residing in opposite bands, i.e., having opposite energies. We show that electrons transition into a correlated ground state if and only if the bands are flat enough, i.e., the transition is impossible in the case of conventional parabolic bands. Although this state is not superconducting in the usual sense and does not exhibit a gap in its excitation spectrum, it is nevertheless immune to elastic scattering caused by any kind of disorder and is therefore expected to exhibit high electric conductivity at low temperature, mimicking the behavior of a real superconductor. Having in mind the recent experimental realizations of flat-band electronic systems in twisted multilayers, we foresee an exciting opportunity for observing a class of highly conductive materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Electrons in condensed matter may transition into a variety of broken-symmetry phase states due to electronelectron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify the phase states theoretically possible in a given setting. Here, we explore electron-electron attraction in a two-band system comprising symmetric conduction and valence bands touching each other at a single point. We assume a mean-field pairing between the electrons having opposite spins, momenta, and in contrast to the conventional superconducting pairing, residing in opposite bands, i.e., having opposite energies. We show that electrons transition into a correlated ground state if and only if the bands are flat enough, i.e., the transition is impossible in the case of conventional parabolic bands. Although this state is not superconducting in the usual sense and does not exhibit a gap in its excitation spectrum, it is nevertheless immune to elastic scattering caused by any kind of disorder and is therefore expected to exhibit high electric conductivity at low temperature, mimicking the behavior of a real superconductor. Having in mind the recent experimental realizations of flat-band electronic systems in twisted multilayers, we foresee an exciting opportunity for observing a class of highly conductive materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUTrushin, M
Peng, LT
Sharma, G
Vignale, G
Adam, S
- AFMaxim Trushin
Liangtao Peng
Gargee Sharma
Giovanni Vignale
Shaffique Adam
- TIHigh conductivity from cross-band electron pairing in flat-band systems
- SOPHYSICAL REVIEW B
- LAEnglish
- DTArticle
- IDSUPERCONDUCTIVITY; GRAPHENE; PHYSICS
- ABElectrons in condensed matter may transition into a variety of broken-symmetry phase states due to electronelectron interactions. Applying diverse mean-field approximations to the interaction term is arguably the simplest way to identify the phase states theoretically possible in a given setting. Here, we explore electron-electron attraction in a two-band system comprising symmetric conduction and valence bands touching each other at a single point. We assume a mean-field pairing between the electrons having opposite spins, momenta, and in contrast to the conventional superconducting pairing, residing in opposite bands, i.e., having opposite energies. We show that electrons transition into a correlated ground state if and only if the bands are flat enough, i.e., the transition is impossible in the case of conventional parabolic bands. Although this state is not superconducting in the usual sense and does not exhibit a gap in its excitation spectrum, it is nevertheless immune to elastic scattering caused by any kind of disorder and is therefore expected to exhibit high electric conductivity at low temperature, mimicking the behavior of a real superconductor. Having in mind the recent experimental realizations of flat-band electronic systems in twisted multilayers, we foresee an exciting opportunity for observing a class of highly conductive materials.
- C1[Trushin, Maxim; Adam, Shaffique] Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore.
[Trushin, Maxim] Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore.
[Trushin, Maxim; Peng, Liangtao] Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore.
[Peng, Liangtao; Adam, Shaffique] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore.
[Sharma, Gargee] Indian Inst Technol Mandi, Sch Phys Sci, Mandi 175005, India.
[Vignale, Giovanni] Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore.
[Vignale, Giovanni] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA.
[Adam, Shaffique] Yale NUS Coll, 16 Coll Ave West, Singapore 138527, Singapore - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; National University of Singapore; Indian Institute of Technology System (IIT System); Indian Institute of Technology (IIT) - Mandi; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; University of Missouri System; University of Missouri Columbia; Yale NUS College
- RPTrushin, M (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, 9 Engn Dr 1, Singapore 117575, Singapore; Trushin, M (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, 4 Sci Dr 2, Singapore 117544, Singapore; Trushin, M (corresponding author), Natl Univ Singapore, Ctr Adv 2D Mat, 6 Sci Dr 2, Singapore 117546, Singapore
- FUSingapore Ministry of Education Research Centre of Excellence award [EDUNC- 33-18-279-V12]; Singapore National Science Foundation Investigator Award [NRF-NRFI06-2020-0003]; Singapore National Science Foundation Medium Sized Centre Programme [SRG/2020/000134]; SERB
- FXThis paper is supported by the Singapore Ministry of Education Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM, Project No. EDUNC- 33-18-279-V12) and Singapore National Science Foundation Investigator Award (Grant No. NRF-NRFI06-2020-0003) . In addition, M.T. acknowledges support from the Centre for Advanced 2D Materials funded within the Singapore National Science Foundation Medium Sized Centre Programme and thanks Maksim Ulybyshev and Fakher Assaad for discussions and hospitality at the University of Wuerzburg. G.S. acknowledges support from SERB Grant No. SRG/2020/000134.
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- JIPhys. Rev. B
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- PY2024
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- DI10.1103/PhysRevB.109.245118
- PG11
- WCMaterials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
- SCMaterials Science; Physics
- UTWOS:001247474400001
- ER
- EF
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Lee, Jong Hak; Loh, Duane N; Yeo, Zhen Yuan; Ong, Yong Kang; Balakrishnan, Deepan; Limpo, Carlos Maria Alava; Datta, Abhik; Cetin, Cagdas; Ning, Shoucong; Wong, Clarissa; Shi, Jian; Hou, Fuchen; Lin, Junhao; Minamikawa, Tadahiro; Ito, Tomonori; Kamisuki, Hiroyuki; Pennycook, Stephen; Matsudaira, Paul; Ozyilmaz, Barbaros Engineering a Hierarchy of Disorder: A New Route to Synthesize High-Performance 3D Nanoporous All-Carbon Materials ADVANCED MATERIALS, 2024, DOI: 10.1002/adma.202402628. Abstract | BibTeX | Endnote @article{ISI:001239151600001,
title = {Engineering a Hierarchy of Disorder: A New Route to Synthesize High-Performance 3D Nanoporous All-Carbon Materials},
author = {Jong Hak Lee and Duane N Loh and Zhen Yuan Yeo and Yong Kang Ong and Deepan Balakrishnan and Carlos Maria Alava Limpo and Abhik Datta and Cagdas Cetin and Shoucong Ning and Clarissa Wong and Jian Shi and Fuchen Hou and Junhao Lin and Tadahiro Minamikawa and Tomonori Ito and Hiroyuki Kamisuki and Stephen Pennycook and Paul Matsudaira and Barbaros Ozyilmaz},
doi = {10.1002/adma.202402628},
times_cited = {0},
issn = {0935-9648},
year = {2024},
date = {2024-06-04},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {A new nanoporous amorphous carbon (NAC) structure that achieves both ultrahigh strength and high electrical conductivity, which are usually incompatible in porous materials is reported. By using modified spark plasma sintering, three amorphous carbon phases with different atomic bonding configurations are created. The composite consisted of an amorphous sp(2)-carbon matrix mixed with amorphous sp(3)-carbon and amorphous graphitic motif. NAC structure has an isotropic electrical conductivity of up to 12 000 S m(-1), Young's modulus of up to approximate to 5 GPa, and Vickers hardness of over 900 MPa. These properties are superior to those of existing conductive nanoporous materials. Direct investigation of the multiscale structure of this material through transmission electron microscopy, electron energy loss spectroscopy, and machine learning-based electron tomography revealed that the origin of the remarkable material properties is the well-organized sp(2)/sp(3) amorphous carbon phases with a core-shell-like architecture, where the sp(3)-rich carbon forms a resilient core surrounded by a conductive sp(2)-rich layer. This research not only introduces novel materials with exceptional properties but also opens new opportunities for exploring amorphous structures and designing high-performance materials.},
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A new nanoporous amorphous carbon (NAC) structure that achieves both ultrahigh strength and high electrical conductivity, which are usually incompatible in porous materials is reported. By using modified spark plasma sintering, three amorphous carbon phases with different atomic bonding configurations are created. The composite consisted of an amorphous sp(2)-carbon matrix mixed with amorphous sp(3)-carbon and amorphous graphitic motif. NAC structure has an isotropic electrical conductivity of up to 12 000 S m(-1), Young's modulus of up to approximate to 5 GPa, and Vickers hardness of over 900 MPa. These properties are superior to those of existing conductive nanoporous materials. Direct investigation of the multiscale structure of this material through transmission electron microscopy, electron energy loss spectroscopy, and machine learning-based electron tomography revealed that the origin of the remarkable material properties is the well-organized sp(2)/sp(3) amorphous carbon phases with a core-shell-like architecture, where the sp(3)-rich carbon forms a resilient core surrounded by a conductive sp(2)-rich layer. This research not only introduces novel materials with exceptional properties but also opens new opportunities for exploring amorphous structures and designing high-performance materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULee, JH
Loh, ND
Yeo, ZY
Ong, YK
Balakrishnan, D
Limpo, CMA
Datta, A
Cetin, C
Ning, SC
Wong, C
Shi, J
Hou, FC
Lin, JH
Minamikawa, T
Ito, T
Kamisuki, H
Pennycook, S
Matsudaira, P
Özyilmaz, B
- AFJong Hak Lee
Duane N Loh
Zhen Yuan Yeo
Yong Kang Ong
Deepan Balakrishnan
Carlos Maria Alava Limpo
Abhik Datta
Cagdas Cetin
Shoucong Ning
Clarissa Wong
Jian Shi
Fuchen Hou
Junhao Lin
Tadahiro Minamikawa
Tomonori Ito
Hiroyuki Kamisuki
Stephen Pennycook
Paul Matsudaira
Barbaros Ozyilmaz
- TIEngineering a Hierarchy of Disorder: A New Route to Synthesize High-Performance 3D Nanoporous All-Carbon Materials
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DEElectrical Conductivity; High Strength Nanoporous Structure); Multiphase Composites; Sp(2)-sp(3) Mixed Amorphous Carbon
- IDELECTRICAL-CONDUCTIVITY; AMORPHOUS-CARBON; POROSITY
- ABA new nanoporous amorphous carbon (NAC) structure that achieves both ultrahigh strength and high electrical conductivity, which are usually incompatible in porous materials is reported. By using modified spark plasma sintering, three amorphous carbon phases with different atomic bonding configurations are created. The composite consisted of an amorphous sp(2)-carbon matrix mixed with amorphous sp(3)-carbon and amorphous graphitic motif. NAC structure has an isotropic electrical conductivity of up to 12 000 S m(-1), Young's modulus of up to approximate to 5 GPa, and Vickers hardness of over 900 MPa. These properties are superior to those of existing conductive nanoporous materials. Direct investigation of the multiscale structure of this material through transmission electron microscopy, electron energy loss spectroscopy, and machine learning-based electron tomography revealed that the origin of the remarkable material properties is the well-organized sp(2)/sp(3) amorphous carbon phases with a core-shell-like architecture, where the sp(3)-rich carbon forms a resilient core surrounded by a conductive sp(2)-rich layer. This research not only introduces novel materials with exceptional properties but also opens new opportunities for exploring amorphous structures and designing high-performance materials.
- C1[Lee, Jong Hak; Ong, Yong Kang; Cetin, Cagdas; Wong, Clarissa; Ozyilmaz, Barbaros] Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore 117546, Singapore.
[Lee, Jong Hak; Loh, N. Duane; Yeo, Zhen Yuan; Ozyilmaz, Barbaros] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore.
[Loh, N. Duane; Yeo, Zhen Yuan; Balakrishnan, Deepan; Datta, Abhik; Matsudaira, Paul] Natl Univ Singapore, Dept Biol Sci, Singapore 117558, Singapore.
[Loh, N. Duane; Yeo, Zhen Yuan; Balakrishnan, Deepan; Shi, Jian; Matsudaira, Paul] Natl Univ Singapore, Ctr Bioimaging Sci, Singapore 117543, Singapore.
[Limpo, Carlos Maria Alava; Ning, Shoucong; Pennycook, Stephen; Ozyilmaz, Barbaros] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore.
[Hou, Fuchen; Lin, Junhao] Southern Univ Sci & Technol, Southern Univ Sci & Technol, Dept Phys, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China.
[Minamikawa, Tadahiro; Ito, Tomonori; Kamisuki, Hiroyuki] Chem Device Dept Murata Mfg Co Ltd, Yasu, Shiga 5202393, Japan.
[Ozyilmaz, Barbaros] Natl Univ Singapore, Inst Funct Intelligent Mat I FIM, Singapore 117544, Singapore - C3National University of Singapore; National University of Singapore; National University of Singapore; National University of Singapore; National University of Singapore; Southern University of Science & Technology; National University of Singapore
- RPÖzyilmaz, B (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore 117546, Singapore; Özyilmaz, B (corresponding author), Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore; Özyilmaz, B (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore; Özyilmaz, B (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat I FIM, Singapore 117544, Singapore
- FUNational Research Foundation, Prime Minister's Office, Singapore, under its Competitive Research Programme (CRP award) [NRF-CRP22-2019-008]; National Research Foundation, Prime Minister's Office, Singapore, under Medium-Sized Centre Programme (CA2DM) [EDUNC-33-18-279-V12]; Ministry of Education of Singapore, under its Research Centre of Excellence award [S22-19013-STDP]; EDB Singapore, under its Space Technology Development Programme [NRF-CRP16-2015-05]; Competitive Research Programme (CRP award) by the National Research Foundation, Prime Minister's Office, Singapore [11974156]; Singapore Ministry of Education AcRF Tier 1 Grant [ZDSYS20190902092905285, KQTD20190929173815000]; National University of Singapore, Early Career Research Grant; National Natural Science Foundation of China; Science, Technology and Innovation Commission of Shenzhen Municipality; Presidential fund and Development and Reform Commission of Shenzhen Municipality
- FXB.OE. acknowledges support by the National Research Foundation, Prime Minister's Office, Singapore, under its Competitive Research Programme (CRP award number NRF-CRP22-2019-008) and Medium-Sized Centre Programme (CA2DM), by Ministry of Education of Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM, Project No. EDUNC-33-18-279-V12), and by EDB Singapore, under its Space Technology Development Programme (S22-19013-STDP). N.D.L. thanks the support of the Competitive Research Programme (CRP award number NRF-CRP16-2015-05) by the National Research Foundation, Prime Minister's Office, Singapore, Singapore Ministry of Education AcRF Tier 1 Grant and the National University of Singapore, Early Career Research Grant (N.D.L.). F.H. and J.L. would like to acknowledge the support from National Natural Science Foundation of China (Grant No.11974156), the Science, Technology and Innovation Commission of Shenzhen Municipality (No. ZDSYS20190902092905285 and KQTD20190929173815000), and also the assistance of SUSTech Core Research Facilities, especially technical support from Cryo-EM Center and Pico-Centre that receives support from Presidential fund and Development and Reform Commission of Shenzhen Municipality.
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- JIAdv. Mater.
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- PY2024
- DI10.1002/adma.202402628
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- SCChemistry; Science & Technology - Other Topics; Materials Science; Physics
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Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Chen, Zhaolong; Kashchenko, Mikhail; Lin, Li; Olsen, Thomas; Li, Jing; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, Castro A H; Novoselov, Kostya S; Lu, Jiong Evidence for electron-hole crystals in a Mott insulator NATURE MATERIALS, 2024, DOI: 10.1038/s41563-024-01910-3. Abstract | BibTeX | Endnote @article{ISI:001237790900002,
title = {Evidence for electron-hole crystals in a Mott insulator},
author = {Zhizhan Qiu and Yixuan Han and Keian Noori and Zhaolong Chen and Mikhail Kashchenko and Li Lin and Thomas Olsen and Jing Li and Hanyan Fang and Pin Lyu and Mykola Telychko and Xingyu Gu and Shaffique Adam and Su Ying Quek and Aleksandr Rodin and Castro A H Neto and Kostya S Novoselov and Jiong Lu},
doi = {10.1038/s41563-024-01910-3},
times_cited = {0},
issn = {1476-1122},
year = {2024},
date = {2024-06-03},
journal = {NATURE MATERIALS},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.},
keywords = {},
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The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUQiu, ZZ
Han, YX
Noori, K
Chen, ZL
Kashchenko, M
Lin, L
Olsen, T
Li, J
Fang, HY
Lyu, P
Telychko, M
Gu, XY
Adam, S
Quek, SY
Rodin, A
Neto, AHC
Novoselov, KS
Lu, J
- AFZhizhan Qiu
Yixuan Han
Keian Noori
Zhaolong Chen
Mikhail Kashchenko
Li Lin
Thomas Olsen
Jing Li
Hanyan Fang
Pin Lyu
Mykola Telychko
Xingyu Gu
Shaffique Adam
Su Ying Quek
Aleksandr Rodin
Castro A H Neto
Kostya S Novoselov
Jiong Lu
- TIEvidence for electron-hole crystals in a Mott insulator
- SONATURE MATERIALS
- LAEnglish
- DTArticle
- IDWIGNER CRYSTAL
- ABThe coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.
- C1[Qiu, Zhizhan; Noori, Keian; Chen, Zhaolong; Lin, Li; Neto, A. H. Castro; Novoselov, Kostya S.; Lu, Jiong] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore.
[Han, Yixuan; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Lu, Jiong] Natl Univ Singapore, Dept Chem, Singapore, Singapore.
[Noori, Keian; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, A. H. Castro; Lu, Jiong] Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore, Singapore.
[Chen, Zhaolong] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen, Peoples R China.
[Kashchenko, Mikhail] Brain & Consciousness Res Ctr, Programmable Funct Mat Lab, Moscow, Russia.
[Kashchenko, Mikhail] Moscow Inst Phys & Technol, Ctr Photon & Mat 2D, Dolgoprudnyi 141700, Russia.
[Lin, Li] Peking Univ, Sch Mat Sci & Engn, Beijing, Peoples R China.
[Olsen, Thomas] Tech Univ Denmark, Dept Phys, CAMD, Lyngby, Denmark.
[Li, Jing] Beihang Univ, Sch Chem, Beijing, Peoples R China.
[Gu, Xingyu; Adam, Shaffique; Quek, Su Ying] Natl Univ Singapore, Dept Phys, Singapore, Singapore.
[Adam, Shaffique; Rodin, Aleksandr] Yale NUS Coll, Singapore, Singapore.
[Adam, Shaffique; Quek, Su Ying; Neto, A. H. Castro; Novoselov, Kostya S.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore.
[Quek, Su Ying] Natl Univ Singapore, NUS Grad Sch, Integrat Sci & Engn Programme, Singapore, Singapore - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; Peking University; Moscow Institute of Physics & Technology; Peking University; Technical University of Denmark; Beihang University; National University of Singapore; Yale NUS College; National University of Singapore; National University of Singapore
- RPNovoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Dept Chem, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore, Singapore; Novoselov, KS (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore
- FUMinistry of Education - Singapore (MOE) [MOE-T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004]; Ministry of Education [M21K2c0113]; Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant [EDUNC-33-18-279-V12]; Ministry of Education, Singapore (Research Centre of Excellence award) [RSRPR190000]; Royal Society, UK [21-79-20225]; Russian Science Foundation
- FXJ. Lu acknowledges support from Ministry of Education grants (MOE-T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004) and Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant (M21K2c0113). K.S.N. acknowledges support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM) project no. EDUNC-33-18-279-V12), and the Royal Society, UK (grant no. RSRPR190000). M.K. acknowledges support from the Russian Science Foundation (grant no. 21-79-20225) and Vladimir Potanin (through Brain and Consciousness Research Center).
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- TC0
- Z90
- U12
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- PUNATURE PORTFOLIO
- PIBERLIN
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- SN1476-1122
- J9NAT MATER
- JINat. Mater.
- PDJUN 3
- PY2024
- DI10.1038/s41563-024-01910-3
- PG11
- WCChemistry, Physical; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
- SCChemistry; Materials Science; Physics
- GASX6P9
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- ER
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