2026
|
Povolotskiy, Maksim R; Slavich, Aleksandr S; Ermolaev, Georgy A; Grudinin, Dmitriy V; Pak, Nikolay V; Zavidovskiy, Ilya A; Kravtsov, Konstantin V; Minnekhanov, Anton A; Tatmyshevskiy, Mikhail K; Syuy, Alexander V; Yakubovsky, Dmitry I; Mazitov, Arslan; Klimova, Liudmila A; Toksumakov, Adilet N; Melentev, Alexander V; Zhukova, Elena; Ghazaryan, Davit A; Tselikov, Gleb; Kruglov, Ivan; Novikov, Sergey M; Vyshnevyy, Andrey A; Arsenin, Aleksey V; Novoselov, Kostya S; Volkov, Valentyn S Record Index-Bandgap Trade-Off: CdPS3 as a High-Index van der Waals
Platform for Ultraviolet-Visible Nanophotonics NANOPHOTONICS, 15 (11), 2026, DOI: 10.1002/nap2.70142. Abstract | BibTeX | Endnote @article{WOS:001782497400001,
title = {Record Index-Bandgap Trade-Off: CdPS3 as a High-Index van der Waals
Platform for Ultraviolet-Visible Nanophotonics},
author = {Maksim R Povolotskiy and Aleksandr S Slavich and Georgy A Ermolaev and Dmitriy V Grudinin and Nikolay V Pak and Ilya A Zavidovskiy and Konstantin V Kravtsov and Anton A Minnekhanov and Mikhail K Tatmyshevskiy and Alexander V Syuy and Dmitry I Yakubovsky and Arslan Mazitov and Liudmila A Klimova and Adilet N Toksumakov and Alexander V Melentev and Elena Zhukova and Davit A Ghazaryan and Gleb Tselikov and Ivan Kruglov and Sergey M Novikov and Andrey A Vyshnevyy and Aleksey V Arsenin and Kostya S Novoselov and Valentyn S Volkov},
doi = {10.1002/nap2.70142},
times_cited = {0},
issn = {2192-8606},
year = {2026},
date = {2026-06-01},
journal = {NANOPHOTONICS},
volume = {15},
number = {11},
publisher = {WILEY},
address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA},
abstract = {The development of nanophotonics is hindered by a fundamental trade-off
between a material's refractive index (n) and its electronic bandgap (E
g), which severely restricts the choice of materials for
short-wavelength applications. This challenge is particularly acute in
the visible and ultraviolet (UV) spectra, where high-performance devices
require materials that are simultaneously highly refractive and
transparent. Here, we report on the van der Waals (vdW) crystal cadmium
phosphorus trisulfide (CdPS3) as a solution to this long-standing
problem. Through comprehensive optical and structural characterization,
we show that CdPS3 possesses an anomalously high in-plane refractive
index across the visible spectrum approaching three in the near-UV,
combined with a wide indirect bandgap. This combination of properties is
validated by first-principles calculations and direct near-field imaging
of highly confined waveguide modes. These findings establish CdPS3 as a
leading material for UV-visible photonics, opening a new pathway for the
development of high-density integrated circuits and metasurfaces.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The development of nanophotonics is hindered by a fundamental trade-off
between a material's refractive index (n) and its electronic bandgap (E
g), which severely restricts the choice of materials for
short-wavelength applications. This challenge is particularly acute in
the visible and ultraviolet (UV) spectra, where high-performance devices
require materials that are simultaneously highly refractive and
transparent. Here, we report on the van der Waals (vdW) crystal cadmium
phosphorus trisulfide (CdPS3) as a solution to this long-standing
problem. Through comprehensive optical and structural characterization,
we show that CdPS3 possesses an anomalously high in-plane refractive
index across the visible spectrum approaching three in the near-UV,
combined with a wide indirect bandgap. This combination of properties is
validated by first-principles calculations and direct near-field imaging
of highly confined waveguide modes. These findings establish CdPS3 as a
leading material for UV-visible photonics, opening a new pathway for the
development of high-density integrated circuits and metasurfaces. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFMaksim R Povolotskiy
Aleksandr S Slavich
Georgy A Ermolaev
Dmitriy V Grudinin
Nikolay V Pak
Ilya A Zavidovskiy
Konstantin V Kravtsov
Anton A Minnekhanov
Mikhail K Tatmyshevskiy
Alexander V Syuy
Dmitry I Yakubovsky
Arslan Mazitov
Liudmila A Klimova
Adilet N Toksumakov
Alexander V Melentev
Elena Zhukova
Davit A Ghazaryan
Gleb Tselikov
Ivan Kruglov
Sergey M Novikov
Andrey A Vyshnevyy
Aleksey V Arsenin
Kostya S Novoselov
Valentyn S Volkov
- TIRecord Index-Bandgap Trade-Off: CdPS3 as a High-Index van der Waals
Platform for Ultraviolet-Visible Nanophotonics - SONANOPHOTONICS
- DTArticle
- ABThe development of nanophotonics is hindered by a fundamental trade-off
between a material's refractive index (n) and its electronic bandgap (E
g), which severely restricts the choice of materials for
short-wavelength applications. This challenge is particularly acute in
the visible and ultraviolet (UV) spectra, where high-performance devices
require materials that are simultaneously highly refractive and
transparent. Here, we report on the van der Waals (vdW) crystal cadmium
phosphorus trisulfide (CdPS3) as a solution to this long-standing
problem. Through comprehensive optical and structural characterization,
we show that CdPS3 possesses an anomalously high in-plane refractive
index across the visible spectrum approaching three in the near-UV,
combined with a wide indirect bandgap. This combination of properties is
validated by first-principles calculations and direct near-field imaging
of highly confined waveguide modes. These findings establish CdPS3 as a
leading material for UV-visible photonics, opening a new pathway for the
development of high-density integrated circuits and metasurfaces. - Z90
- PUWILEY
- PA111 RIVER ST, HOBOKEN 07030-5774, NJ USA
- SN2192-8606
- VL15
- DI10.1002/nap2.70142
- UTWOS:001782497400001
- ER
- EF
|
Kazantsev, Ivan S; Tikhonowski, Gleb V; Ermolaev, Georgy A; Minnekhanov, Anton A; Slavich, Aleksandr S; Solovei, Valentin R; Yakubovsky, Dmitry I; Mosina, Kseniia; Lipilin, Fedor; Syuy, Alexander V; Sofer, Zdenek; Tselikov, Gleb I; Arsenin, Aleksey V; Novoselov, Kostya S; Volkov, Valentyn S Printable van der Waals Nanoparticles for Additive Technologies NANO LETTERS, 26 (23), pp. 7621-7627, 2026, DOI: 10.1021/acs.nanolett.6c01131. Abstract | BibTeX | Endnote @article{WOS:001783612100001,
title = {Printable van der Waals Nanoparticles for Additive Technologies},
author = {Ivan S Kazantsev and Gleb V Tikhonowski and Georgy A Ermolaev and Anton A Minnekhanov and Aleksandr S Slavich and Valentin R Solovei and Dmitry I Yakubovsky and Kseniia Mosina and Fedor Lipilin and Alexander V Syuy and Zdenek Sofer and Gleb I Tselikov and Aleksey V Arsenin and Kostya S Novoselov and Valentyn S Volkov},
doi = {10.1021/acs.nanolett.6c01131},
times_cited = {0},
issn = {1530-6984},
year = {2026},
date = {2026-06-01},
journal = {NANO LETTERS},
volume = {26},
number = {23},
pages = {7621-7627},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {The growing demand for high-performance, nanoscale building blocks for
printing technologies necessitates a scalable method to produce clean,
stable nano-inks without performance-degrading additives. Layered van
der Waals (vdW) materials are promising candidates due to their unique
properties and can be used to create such nano-inks. Current approaches
often rely on surfactant residues or high-boiling point solvents to
achieve colloidal stability, which can be incompatible with chemically
sensitive substrates. A robust methodology based on pulsed laser
ablation in liquid (PLAL) provides a purely physical, single-step
alternative to circumvent these limitations. This approach directly
generates a portfolio of additive-free, spherical vdW nanoparticles that
exhibit exceptional, long-term colloidal stability, an intrinsic
property that stems from a native surface charging mechanism,
eliminating the need for stabilizing agents. Our work establishes a
universal platform for vdW nano-inks, offering a powerful new tool for
next-generation optoelectronics, sensing technologies, and flexible
devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The growing demand for high-performance, nanoscale building blocks for
printing technologies necessitates a scalable method to produce clean,
stable nano-inks without performance-degrading additives. Layered van
der Waals (vdW) materials are promising candidates due to their unique
properties and can be used to create such nano-inks. Current approaches
often rely on surfactant residues or high-boiling point solvents to
achieve colloidal stability, which can be incompatible with chemically
sensitive substrates. A robust methodology based on pulsed laser
ablation in liquid (PLAL) provides a purely physical, single-step
alternative to circumvent these limitations. This approach directly
generates a portfolio of additive-free, spherical vdW nanoparticles that
exhibit exceptional, long-term colloidal stability, an intrinsic
property that stems from a native surface charging mechanism,
eliminating the need for stabilizing agents. Our work establishes a
universal platform for vdW nano-inks, offering a powerful new tool for
next-generation optoelectronics, sensing technologies, and flexible
devices. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFIvan S Kazantsev
Gleb V Tikhonowski
Georgy A Ermolaev
Anton A Minnekhanov
Aleksandr S Slavich
Valentin R Solovei
Dmitry I Yakubovsky
Kseniia Mosina
Fedor Lipilin
Alexander V Syuy
Zdenek Sofer
Gleb I Tselikov
Aleksey V Arsenin
Kostya S Novoselov
Valentyn S Volkov
- TIPrintable van der Waals Nanoparticles for Additive Technologies
- SONANO LETTERS
- DTArticle
- ABThe growing demand for high-performance, nanoscale building blocks for
printing technologies necessitates a scalable method to produce clean,
stable nano-inks without performance-degrading additives. Layered van
der Waals (vdW) materials are promising candidates due to their unique
properties and can be used to create such nano-inks. Current approaches
often rely on surfactant residues or high-boiling point solvents to
achieve colloidal stability, which can be incompatible with chemically
sensitive substrates. A robust methodology based on pulsed laser
ablation in liquid (PLAL) provides a purely physical, single-step
alternative to circumvent these limitations. This approach directly
generates a portfolio of additive-free, spherical vdW nanoparticles that
exhibit exceptional, long-term colloidal stability, an intrinsic
property that stems from a native surface charging mechanism,
eliminating the need for stabilizing agents. Our work establishes a
universal platform for vdW nano-inks, offering a powerful new tool for
next-generation optoelectronics, sensing technologies, and flexible
devices. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1530-6984
- VL26
- BP7621
- EP7627
- DI10.1021/acs.nanolett.6c01131
- UTWOS:001783612100001
- ER
- EF
|
Litvinov, Dmitrii; Gavriliuc, Virgil; Grzeszczyk, Magdalena; Vaklinova, Kristina; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Kostya S; Koperski, Maciej Surface defects in carbon-doped hexagonal boron nitride for
negative-contrast direct laser writing 2D MATERIALS, 13 (2), 2026, DOI: 10.1088/2053-1583/ae463c. Abstract | BibTeX | Endnote @article{WOS:001701838600001,
title = {Surface defects in carbon-doped hexagonal boron nitride for
negative-contrast direct laser writing},
author = {Dmitrii Litvinov and Virgil Gavriliuc and Magdalena Grzeszczyk and Kristina Vaklinova and Kenji Watanabe and Takashi Taniguchi and Kostya S Novoselov and Maciej Koperski},
doi = {10.1088/2053-1583/ae463c},
times_cited = {0},
issn = {2053-1583},
year = {2026},
date = {2026-06-01},
journal = {2D MATERIALS},
volume = {13},
number = {2},
publisher = {IOP Publishing Ltd},
address = {No.2 The Distillery, Glassfields, Avon Street, Bristol, ENGLAND},
abstract = {Radiative defects in hexagonal boron nitride (hBN) are active in a broad
spectral range from deep ultraviolet to near-infrared wavelengths.
Representatives of these defects act as bright single photon sources,
spin-1 systems, and multiproperty atomic-scale sensors. They are
predominantly investigated in bulk hBN films, where defects are
decoupled from surface and interfacial effects. Here, we demonstrate a
novel class of surface defects optically active in the green/yellow
visible spectral range, which exhibit photophysical properties distinct
from their bulk counterparts. High-power resonant laser illumination
quenched the emission from the ensemble of such defects, which was
attributed to a light-driven structural reconfiguration. The quenched
defects were found to recover their emissive capabilities via a thermal
cycling process, revealing an activation energy of 24.5 meV for the
structural transition. Alternatively, permanent quenching of the defects
was triggered by surface chemistry, involving lithiation-enabled
attachment of functional groups. These mechanisms were utilized to
realize negative-contrast direct laser writing, designing arbitrary
geometric emissive patterns on demand in a microscopic configuration.
The surface-active radiative centers in hBN appear particularly
attractive for exploring environmental sensitivity, surface science, and
coupling to photonic structures or electronic devices by taking unique
advantage of the two-dimensional characteristics of the host lattice.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Radiative defects in hexagonal boron nitride (hBN) are active in a broad
spectral range from deep ultraviolet to near-infrared wavelengths.
Representatives of these defects act as bright single photon sources,
spin-1 systems, and multiproperty atomic-scale sensors. They are
predominantly investigated in bulk hBN films, where defects are
decoupled from surface and interfacial effects. Here, we demonstrate a
novel class of surface defects optically active in the green/yellow
visible spectral range, which exhibit photophysical properties distinct
from their bulk counterparts. High-power resonant laser illumination
quenched the emission from the ensemble of such defects, which was
attributed to a light-driven structural reconfiguration. The quenched
defects were found to recover their emissive capabilities via a thermal
cycling process, revealing an activation energy of 24.5 meV for the
structural transition. Alternatively, permanent quenching of the defects
was triggered by surface chemistry, involving lithiation-enabled
attachment of functional groups. These mechanisms were utilized to
realize negative-contrast direct laser writing, designing arbitrary
geometric emissive patterns on demand in a microscopic configuration.
The surface-active radiative centers in hBN appear particularly
attractive for exploring environmental sensitivity, surface science, and
coupling to photonic structures or electronic devices by taking unique
advantage of the two-dimensional characteristics of the host lattice. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFDmitrii Litvinov
Virgil Gavriliuc
Magdalena Grzeszczyk
Kristina Vaklinova
Kenji Watanabe
Takashi Taniguchi
Kostya S Novoselov
Maciej Koperski
- TISurface defects in carbon-doped hexagonal boron nitride for
negative-contrast direct laser writing - SO2D MATERIALS
- DTArticle
- ABRadiative defects in hexagonal boron nitride (hBN) are active in a broad
spectral range from deep ultraviolet to near-infrared wavelengths.
Representatives of these defects act as bright single photon sources,
spin-1 systems, and multiproperty atomic-scale sensors. They are
predominantly investigated in bulk hBN films, where defects are
decoupled from surface and interfacial effects. Here, we demonstrate a
novel class of surface defects optically active in the green/yellow
visible spectral range, which exhibit photophysical properties distinct
from their bulk counterparts. High-power resonant laser illumination
quenched the emission from the ensemble of such defects, which was
attributed to a light-driven structural reconfiguration. The quenched
defects were found to recover their emissive capabilities via a thermal
cycling process, revealing an activation energy of 24.5 meV for the
structural transition. Alternatively, permanent quenching of the defects
was triggered by surface chemistry, involving lithiation-enabled
attachment of functional groups. These mechanisms were utilized to
realize negative-contrast direct laser writing, designing arbitrary
geometric emissive patterns on demand in a microscopic configuration.
The surface-active radiative centers in hBN appear particularly
attractive for exploring environmental sensitivity, surface science, and
coupling to photonic structures or electronic devices by taking unique
advantage of the two-dimensional characteristics of the host lattice. - Z90
- PUIOP Publishing Ltd
- PANo.2 The Distillery, Glassfields, Avon Street, Bristol, ENGLAND
- SN2053-1583
- VL13
- DI10.1088/2053-1583/ae463c
- UTWOS:001701838600001
- ER
- EF
|
Zhou, Xiangyu; Gayduchenko, Igor; Kudriashov, Andrei; Shein, Kirill; Kuksov, Anton; Elesin, Leonid; Kravtsov, Mikhail; Shilov, Artur; Popova, Olga; Jana, Subhajit; Novoselov, Kostya S; Taniguchi, Takashi; Watanabe, Kenji; Goltsman, Gregory; Bandurin, Denis A Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies NANO LETTERS, 26 (22), pp. 7435-7442, 2026, DOI: 10.1021/acs.nanolett.6c01483. Abstract | BibTeX | Endnote @article{WOS:001776257400001,
title = {Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies},
author = {Xiangyu Zhou and Igor Gayduchenko and Andrei Kudriashov and Kirill Shein and Anton Kuksov and Leonid Elesin and Mikhail Kravtsov and Artur Shilov and Olga Popova and Subhajit Jana and Kostya S Novoselov and Takashi Taniguchi and Kenji Watanabe and Gregory Goltsman and Denis A Bandurin},
doi = {10.1021/acs.nanolett.6c01483},
times_cited = {0},
issn = {1530-6984},
year = {2026},
date = {2026-06-01},
journal = {NANO LETTERS},
volume = {26},
number = {22},
pages = {7435-7442},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Graphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Graphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFXiangyu Zhou
Igor Gayduchenko
Andrei Kudriashov
Kirill Shein
Anton Kuksov
Leonid Elesin
Mikhail Kravtsov
Artur Shilov
Olga Popova
Subhajit Jana
Kostya S Novoselov
Takashi Taniguchi
Kenji Watanabe
Gregory Goltsman
Denis A Bandurin
- TIGate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies - SONANO LETTERS
- DTArticle
- ABGraphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1530-6984
- VL26
- BP7435
- EP7442
- DI10.1021/acs.nanolett.6c01483
- UTWOS:001776257400001
- ER
- EF
|
Kumar, Pankaj; Bosman, Michel; Lavrentev, Nikolai; Zheng, He; Peng, Ding; Novoselov, Kostya S; Latychevskaia, Tatiana Untangling 3D Atomic Reconstruction in Twisted Bilayer 2D Crystals via
Dark Field Transmission Electron Microscopy NANO LETTERS, 26 (21), pp. 6965-6971, 2026, DOI: 10.1021/acs.nanolett.6c00944. Abstract | BibTeX | Endnote @article{WOS:001770235200001,
title = {Untangling 3D Atomic Reconstruction in Twisted Bilayer 2D Crystals via
Dark Field Transmission Electron Microscopy},
author = {Pankaj Kumar and Michel Bosman and Nikolai Lavrentev and He Zheng and Ding Peng and Kostya S Novoselov and Tatiana Latychevskaia},
doi = {10.1021/acs.nanolett.6c00944},
times_cited = {0},
issn = {1530-6984},
year = {2026},
date = {2026-06-01},
journal = {NANO LETTERS},
volume = {26},
number = {21},
pages = {6965-6971},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Reconstruction of the atomic crystal structure in twisted 2D materials
has been demonstrated to be responsible for multiple exciting phenomena
in van der Waals heterostructures, from the appearance of flat bands in
twisted bilayer graphene to Wigner crystallization in transition metal
dichalcogenides (TMDs). However, there are still neither experimental
methods for accessing the 3D atomic distributions nor models that
describe the exact atomic shifts in such reconstructed structures, which
significantly impedes the development of the field. Dark field (DF)
transmission electron microscopy (TEM) has been conventionally employed
to visualize the local in-plane atomic displacements. Here we expand
this method to obtain a full description of the reconstructed atomic
systems and demonstrate the quantitative relations between the local
stacking and the intensity in the DF image. We show how local 3D atomic
displacements and the interlayer distance can be extracted from a DF
image.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Reconstruction of the atomic crystal structure in twisted 2D materials
has been demonstrated to be responsible for multiple exciting phenomena
in van der Waals heterostructures, from the appearance of flat bands in
twisted bilayer graphene to Wigner crystallization in transition metal
dichalcogenides (TMDs). However, there are still neither experimental
methods for accessing the 3D atomic distributions nor models that
describe the exact atomic shifts in such reconstructed structures, which
significantly impedes the development of the field. Dark field (DF)
transmission electron microscopy (TEM) has been conventionally employed
to visualize the local in-plane atomic displacements. Here we expand
this method to obtain a full description of the reconstructed atomic
systems and demonstrate the quantitative relations between the local
stacking and the intensity in the DF image. We show how local 3D atomic
displacements and the interlayer distance can be extracted from a DF
image. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFPankaj Kumar
Michel Bosman
Nikolai Lavrentev
He Zheng
Ding Peng
Kostya S Novoselov
Tatiana Latychevskaia
- TIUntangling 3D Atomic Reconstruction in Twisted Bilayer 2D Crystals via
Dark Field Transmission Electron Microscopy - SONANO LETTERS
- DTArticle
- ABReconstruction of the atomic crystal structure in twisted 2D materials
has been demonstrated to be responsible for multiple exciting phenomena
in van der Waals heterostructures, from the appearance of flat bands in
twisted bilayer graphene to Wigner crystallization in transition metal
dichalcogenides (TMDs). However, there are still neither experimental
methods for accessing the 3D atomic distributions nor models that
describe the exact atomic shifts in such reconstructed structures, which
significantly impedes the development of the field. Dark field (DF)
transmission electron microscopy (TEM) has been conventionally employed
to visualize the local in-plane atomic displacements. Here we expand
this method to obtain a full description of the reconstructed atomic
systems and demonstrate the quantitative relations between the local
stacking and the intensity in the DF image. We show how local 3D atomic
displacements and the interlayer distance can be extracted from a DF
image. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1530-6984
- VL26
- BP6965
- EP6971
- DI10.1021/acs.nanolett.6c00944
- UTWOS:001770235200001
- ER
- EF
|
