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@article{WOS:001589410700001,
title = {Substrate-Versatile and Stress-Free Tellurization of PtTe2 Films},
author = {Matteo Gardella and Chiara Massetti and Alessandro Cataldo and Pinakapani Tummala and Alessio Lamperti and Carlo Grazianetti and Christian Martella and Alessandro Molle},
doi = {10.1002/pssr.202500305},
times_cited = {0},
issn = {1862-6254},
year = {2026},
date = {2026-01-01},
journal = {PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS},
volume = {20},
number = {1, SI},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Platinum ditelluride (PtTe2) is a type-II Dirac semimetal featuring
tilted cones in its electronic band structure, which leads to intriguing
electronic and optical topological properties. Here, a large area growth
process is presented for the synthesis of PtTe2 films with nanoscale
thickness by sputtering deposition of a Pt precursor layer and
subsequent tellurization at 450 degrees C. Although the Pt deposition
step does not pose stringent limitation on the substrate choice, it is
demonstrated that the heating rate during the tellurization step can
induce a significant thermal-induced strain when the process is extended
from silicon dielectric transparent silica substrates, leading to
macroscopic wrinkling of the PtTe2 film. Thus, a slower tellurization
process is optimized, successfully resulting in stress-free growth even
on dielectric substrates. Additionally, the same new process repeated on
silicon substrates shows a threefold enhanced minimum grain size
compared to the original process. These accomplishments, combined with
the scalability of the growth technique and the deterministic material
patterning achieved by optical lithography, are crucial for a facile
integration of PtTe2 in any kind of device.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{WOS:001612700500001,
title = {Experimental electron band alignment of 1T'and 2H MoTe2/SiO2 interface
using internal photoemission spectroscopy},
author = {Pinaka Pani Tummala and Valeri Afanas'ev and Gabriele Ferrini and Mario Alia and Andrea Serafini and Paolo Targa and Davide Codegoni and Christian Martella and Alessandro Molle and Alessio Lamperti},
doi = {10.1016/j.elspec.2025.147575},
times_cited = {0},
issn = {0368-2048},
year = {2025},
date = {2025-12-01},
journal = {JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA},
volume = {283},
publisher = {ELSEVIER},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
abstract = {Unlike other two-dimensional (2D) transition metal dichalcogenides,
molybdenum ditelluride (MoTe2) displays a stable biphasic character in
artificially synthesizable 2H and 1T' state. While these phases are
inherently distinguished in their electronic band character
(semiconducting and metallic, respectively), it is not clear how they
electronically interface with technology relevant substrate where to
engineer an electronic device layout. In this study, we experimentally
determine the electron band alignment at interfaces between SiO2 and
1T'/2H of MoTe2 few-layers ultrathin films grown by chemical vapor
deposition. We use internal photoemission spectroscopy to determine the
energy barrier height between the 1T'/2H-MoTe2 Fermi level and the oxide
conduction band (CB) bottom. This observation indicates the band gap
opening in 2H-MoTe2 and provides an estimate of the barrier height for
holes at the polytypic 1T'/2H-MoTe2 interface. In particular, by
comparing the Fermi level energy in single-phase 1 T'-MoTe2 with the VB
energy in 2H-MoTe2, we reveal a approximate to 0.4 eV difference,
suggesting that the low Schottky barrier observed at the 1T'/2H
interface results from Fermi level pinning, which is independent of
interface defects and unaffected by the VdW gap. Our findings can be
exploited for optimizing charge transport and device performance,
facilitating the development of next-generation electronic and
optoelectronic devices that harness the unique properties of both phases
in MoTe2.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}