Rybin, M G; Guberna, E A; Kamynin, V A; Nguen, Van Chuc; Obraztsova, E D Modification of electrical characteristics of CVD- graphene by Joule
heating CARBON TRENDS, 21 , 2025, DOI: 10.1016/j.cartre.2025.100577. Abstract | BibTeX | Endnote @article{WOS:001591485000001,
title = {Modification of electrical characteristics of CVD- graphene by Joule
heating},
author = {M G Rybin and E A Guberna and V A Kamynin and Van Chuc Nguen and E D Obraztsova},
doi = {10.1016/j.cartre.2025.100577},
times_cited = {0},
issn = {2667-0569},
year = {2025},
date = {2025-12-01},
journal = {CARBON TRENDS},
volume = {21},
publisher = {ELSEVIER},
address = {RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS},
abstract = {This paper presents an approach for enhancing the electrical
characteristics of graphene synthesized by chemical vapor deposition
(CVD), through a direct resistive heating of the graphene channel by an
electric current. This method efficiently purifies graphene of
impurities and restores the material ideal structure through the
desorption of adsorbed molecules. A graphene field-effect transistor was
employed to characterize the graphene, specifically - to assess the
mobility and concentration of charge carriers. The study investigates
the impact of annealing temperature on both the concentration and type
of charge carriers. It was found that CVD-synthesized graphene exhibits
p-type conductivity, with the charge neutrality point (CNP) positioned
above 80 Volts gate voltage at a 300 nm thickness of SiO2. Annealing at
200 degrees C shifted this neutrality point to 0 Volts, switching the
graphene to electrical neutrality. At higher annealing temperatures,
n-type conductivity was achieved. Additionally, during the annealing
process with current flow, there was a significant enhancement of the
charge carriers mobility in graphene: for holes, mobility increased from
1000 cm2/(V center dot s) to 1800 cm2/(V center dot s), and for
electrons - from 600 cm2/(V center dot s) to 1200 cm2/(V center dot s).
Thus, the study reveals the effective method for removing impurities
appeared after transfer of CVD graphene from copper foil to a dielectric
substrate. This approach may be utilized in preparing samples for
applications in microelectronics, optoelectronics, and related fields.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
This paper presents an approach for enhancing the electrical
characteristics of graphene synthesized by chemical vapor deposition
(CVD), through a direct resistive heating of the graphene channel by an
electric current. This method efficiently purifies graphene of
impurities and restores the material ideal structure through the
desorption of adsorbed molecules. A graphene field-effect transistor was
employed to characterize the graphene, specifically - to assess the
mobility and concentration of charge carriers. The study investigates
the impact of annealing temperature on both the concentration and type
of charge carriers. It was found that CVD-synthesized graphene exhibits
p-type conductivity, with the charge neutrality point (CNP) positioned
above 80 Volts gate voltage at a 300 nm thickness of SiO2. Annealing at
200 degrees C shifted this neutrality point to 0 Volts, switching the
graphene to electrical neutrality. At higher annealing temperatures,
n-type conductivity was achieved. Additionally, during the annealing
process with current flow, there was a significant enhancement of the
charge carriers mobility in graphene: for holes, mobility increased from
1000 cm2/(V center dot s) to 1800 cm2/(V center dot s), and for
electrons - from 600 cm2/(V center dot s) to 1200 cm2/(V center dot s).
Thus, the study reveals the effective method for removing impurities
appeared after transfer of CVD graphene from copper foil to a dielectric
substrate. This approach may be utilized in preparing samples for
applications in microelectronics, optoelectronics, and related fields. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFM G Rybin
E A Guberna
V A Kamynin
Van Chuc Nguen
E D Obraztsova
- TIModification of electrical characteristics of CVD- graphene by Joule
heating - SOCARBON TRENDS
- DTArticle
- ABThis paper presents an approach for enhancing the electrical
characteristics of graphene synthesized by chemical vapor deposition
(CVD), through a direct resistive heating of the graphene channel by an
electric current. This method efficiently purifies graphene of
impurities and restores the material ideal structure through the
desorption of adsorbed molecules. A graphene field-effect transistor was
employed to characterize the graphene, specifically - to assess the
mobility and concentration of charge carriers. The study investigates
the impact of annealing temperature on both the concentration and type
of charge carriers. It was found that CVD-synthesized graphene exhibits
p-type conductivity, with the charge neutrality point (CNP) positioned
above 80 Volts gate voltage at a 300 nm thickness of SiO2. Annealing at
200 degrees C shifted this neutrality point to 0 Volts, switching the
graphene to electrical neutrality. At higher annealing temperatures,
n-type conductivity was achieved. Additionally, during the annealing
process with current flow, there was a significant enhancement of the
charge carriers mobility in graphene: for holes, mobility increased from
1000 cm2/(V center dot s) to 1800 cm2/(V center dot s), and for
electrons - from 600 cm2/(V center dot s) to 1200 cm2/(V center dot s).
Thus, the study reveals the effective method for removing impurities
appeared after transfer of CVD graphene from copper foil to a dielectric
substrate. This approach may be utilized in preparing samples for
applications in microelectronics, optoelectronics, and related fields. - Z90
- PUELSEVIER
- PARADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
- SN2667-0569
- VL21
- DI10.1016/j.cartre.2025.100577
- UTWOS:001591485000001
- ER
- EF
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