2025
|
Lai, Wenhui; Lee, Jong Hak; Yeo, Zhen Yuan; Yuan, Yue; Liu, Yuqing; Shi, Lu; Pu, Yanhui; Ong, Yong Kang; Limpo, Carlos Maria Alava; Rao, Yifan; Xiong, Ting; Lanza, Mario; Loh, Duane N; Ozyilmaz, Barbaros Robust Silicon-Based Anode with High Energy Density upon Dual Welding
Encapsulation ACS NANO, 19 (43), pp. 38040-38052, 2025, DOI: 10.1021/acsnano.5c13278. Abstract | BibTeX | Endnote @article{WOS:001598368000001,
title = {Robust Silicon-Based Anode with High Energy Density upon Dual Welding
Encapsulation},
author = {Wenhui Lai and Jong Hak Lee and Zhen Yuan Yeo and Yue Yuan and Yuqing Liu and Lu Shi and Yanhui Pu and Yong Kang Ong and Carlos Maria Alava Limpo and Yifan Rao and Ting Xiong and Mario Lanza and Duane N Loh and Barbaros Ozyilmaz},
doi = {10.1021/acsnano.5c13278},
times_cited = {0},
issn = {1936-0851},
year = {2025},
date = {2025-11-01},
journal = {ACS NANO},
volume = {19},
number = {43},
pages = {38040-38052},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Silicon has long been considered one of the most promising anode
materials for high-performance lithium-ion batteries due to its high
theoretical capacity. However, a significant challenge that restricts
its practical application is the persistent issue of weak interfacial
contact in the silicon anode, which leads to structural instability
during lithiation/delithiation processes due to large volume expansion.
In this work, we develop a dual welding encapsulation strategy by
constructing Si-C chemical bonding between the silicon and conductive
covering shells and establishing C-C interlayer bonding connections
among the covering shells. By directly examining the interface of
silicon-based composites, we identify the types of compounds and hybrid
orbital structures from their spatial distribution using
machine-learning-enhanced transmission electron microscopy analysis
techniques. This dual welding mechanism not only enhances the mechanical
strength of the protective carbon shell but also ensures sustained
electrical connection between the core and shell through the Si-C bonds.
The robust heterogeneous structure effectively mitigates interfacial
instability within the silicon anode, suppressing volume expansion below
12% after 300 cycles. Thus, the full-cell with the composite anode and
LiNi0.8Co0.1Mn0.1O2 cathode performs a high energy density of 576 Wh
kg-1 and stable cycling, inspiring the construction of commercial
silicon batteries.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Silicon has long been considered one of the most promising anode
materials for high-performance lithium-ion batteries due to its high
theoretical capacity. However, a significant challenge that restricts
its practical application is the persistent issue of weak interfacial
contact in the silicon anode, which leads to structural instability
during lithiation/delithiation processes due to large volume expansion.
In this work, we develop a dual welding encapsulation strategy by
constructing Si-C chemical bonding between the silicon and conductive
covering shells and establishing C-C interlayer bonding connections
among the covering shells. By directly examining the interface of
silicon-based composites, we identify the types of compounds and hybrid
orbital structures from their spatial distribution using
machine-learning-enhanced transmission electron microscopy analysis
techniques. This dual welding mechanism not only enhances the mechanical
strength of the protective carbon shell but also ensures sustained
electrical connection between the core and shell through the Si-C bonds.
The robust heterogeneous structure effectively mitigates interfacial
instability within the silicon anode, suppressing volume expansion below
12% after 300 cycles. Thus, the full-cell with the composite anode and
LiNi0.8Co0.1Mn0.1O2 cathode performs a high energy density of 576 Wh
kg-1 and stable cycling, inspiring the construction of commercial
silicon batteries. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFWenhui Lai
Jong Hak Lee
Zhen Yuan Yeo
Yue Yuan
Yuqing Liu
Lu Shi
Yanhui Pu
Yong Kang Ong
Carlos Maria Alava Limpo
Yifan Rao
Ting Xiong
Mario Lanza
Duane N Loh
Barbaros Ozyilmaz
- TIRobust Silicon-Based Anode with High Energy Density upon Dual Welding
Encapsulation - SOACS NANO
- DTArticle
- ABSilicon has long been considered one of the most promising anode
materials for high-performance lithium-ion batteries due to its high
theoretical capacity. However, a significant challenge that restricts
its practical application is the persistent issue of weak interfacial
contact in the silicon anode, which leads to structural instability
during lithiation/delithiation processes due to large volume expansion.
In this work, we develop a dual welding encapsulation strategy by
constructing Si-C chemical bonding between the silicon and conductive
covering shells and establishing C-C interlayer bonding connections
among the covering shells. By directly examining the interface of
silicon-based composites, we identify the types of compounds and hybrid
orbital structures from their spatial distribution using
machine-learning-enhanced transmission electron microscopy analysis
techniques. This dual welding mechanism not only enhances the mechanical
strength of the protective carbon shell but also ensures sustained
electrical connection between the core and shell through the Si-C bonds.
The robust heterogeneous structure effectively mitigates interfacial
instability within the silicon anode, suppressing volume expansion below
12% after 300 cycles. Thus, the full-cell with the composite anode and
LiNi0.8Co0.1Mn0.1O2 cathode performs a high energy density of 576 Wh
kg-1 and stable cycling, inspiring the construction of commercial
silicon batteries. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1936-0851
- VL19
- BP38040
- EP38052
- DI10.1021/acsnano.5c13278
- UTWOS:001598368000001
- ER
- EF
|
Lai, Wenhui; Lee, Jong Hak; Yuan, Yue; Ong, Yong Kang; Limpo, Carlos; Shi, Lu; Pu, Yanhui; Rao, Yifan; Lanza, Mario; Ozyilmaz, Barbaros Adjustable SiC interfacial layers toward reliable Si-based anode
applications NANOSCALE HORIZONS, 10 (11), pp. 2931-2944, 2025, DOI: 10.1039/d5nh00338e. Abstract | BibTeX | Endnote @article{WOS:001552275100001,
title = {Adjustable SiC interfacial layers toward reliable Si-based anode
applications},
author = {Wenhui Lai and Jong Hak Lee and Yue Yuan and Yong Kang Ong and Carlos Limpo and Lu Shi and Yanhui Pu and Yifan Rao and Mario Lanza and Barbaros Ozyilmaz},
doi = {10.1039/d5nh00338e},
times_cited = {0},
issn = {2055-6756},
year = {2025},
date = {2025-10-01},
journal = {NANOSCALE HORIZONS},
volume = {10},
number = {11},
pages = {2931-2944},
publisher = {ROYAL SOC CHEMISTRY},
address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS,
ENGLAND},
abstract = {The incorporation of a SiC interfacial layer has been recognized as an
effective strategy to tackle the interface contact issue between Si and
carbon, ensuring the structural integrity of Si-based anodes and thereby
enhancing their cycling stability. However, its inherent low activity
and poor conductivity pose a persistent challenge for maximizing
capacity and facilitating ion and electron transport. Here, we present a
thickness/content adjustable SiC interfacial layer in the Si-SiC-C
heterostructure using a modified spark plasma sintering technique. The
SiC layer, with a content of similar to 10%, is discretely coated on
the surface of the Si core, exerting minimal influence on capacity and
ion/electron kinetics, while ensuring high electrode structural
stability. Consequently, the Si-based anode exhibits a stable capacity
of 582 mAh g-1 (0.1 A g-1) and good rate capability (324 mAh g-1 at 2 A
g-1), while maintaining 80% capacity retention over 500 cycles with a
low electrode swelling of 12.6%. More importantly, its capacity
presents a continuous rising trend with the increase of the cycle
number, suggesting a mechanism where the SiC interfacial layer gradually
transforms into a Li-ion-rich phase. This transformation facilitates ion
transport and reaction with Si, resulting in gradual capacity
enhancement. Therefore, the reasonably thickness-regulated SiC
interfacial layer holds promise for providing inspiration for the design
of commercial Si-based anodes.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The incorporation of a SiC interfacial layer has been recognized as an
effective strategy to tackle the interface contact issue between Si and
carbon, ensuring the structural integrity of Si-based anodes and thereby
enhancing their cycling stability. However, its inherent low activity
and poor conductivity pose a persistent challenge for maximizing
capacity and facilitating ion and electron transport. Here, we present a
thickness/content adjustable SiC interfacial layer in the Si-SiC-C
heterostructure using a modified spark plasma sintering technique. The
SiC layer, with a content of similar to 10%, is discretely coated on
the surface of the Si core, exerting minimal influence on capacity and
ion/electron kinetics, while ensuring high electrode structural
stability. Consequently, the Si-based anode exhibits a stable capacity
of 582 mAh g-1 (0.1 A g-1) and good rate capability (324 mAh g-1 at 2 A
g-1), while maintaining 80% capacity retention over 500 cycles with a
low electrode swelling of 12.6%. More importantly, its capacity
presents a continuous rising trend with the increase of the cycle
number, suggesting a mechanism where the SiC interfacial layer gradually
transforms into a Li-ion-rich phase. This transformation facilitates ion
transport and reaction with Si, resulting in gradual capacity
enhancement. Therefore, the reasonably thickness-regulated SiC
interfacial layer holds promise for providing inspiration for the design
of commercial Si-based anodes. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFWenhui Lai
Jong Hak Lee
Yue Yuan
Yong Kang Ong
Carlos Limpo
Lu Shi
Yanhui Pu
Yifan Rao
Mario Lanza
Barbaros Ozyilmaz
- TIAdjustable SiC interfacial layers toward reliable Si-based anode
applications - SONANOSCALE HORIZONS
- DTArticle
- ABThe incorporation of a SiC interfacial layer has been recognized as an
effective strategy to tackle the interface contact issue between Si and
carbon, ensuring the structural integrity of Si-based anodes and thereby
enhancing their cycling stability. However, its inherent low activity
and poor conductivity pose a persistent challenge for maximizing
capacity and facilitating ion and electron transport. Here, we present a
thickness/content adjustable SiC interfacial layer in the Si-SiC-C
heterostructure using a modified spark plasma sintering technique. The
SiC layer, with a content of similar to 10%, is discretely coated on
the surface of the Si core, exerting minimal influence on capacity and
ion/electron kinetics, while ensuring high electrode structural
stability. Consequently, the Si-based anode exhibits a stable capacity
of 582 mAh g-1 (0.1 A g-1) and good rate capability (324 mAh g-1 at 2 A
g-1), while maintaining 80% capacity retention over 500 cycles with a
low electrode swelling of 12.6%. More importantly, its capacity
presents a continuous rising trend with the increase of the cycle
number, suggesting a mechanism where the SiC interfacial layer gradually
transforms into a Li-ion-rich phase. This transformation facilitates ion
transport and reaction with Si, resulting in gradual capacity
enhancement. Therefore, the reasonably thickness-regulated SiC
interfacial layer holds promise for providing inspiration for the design
of commercial Si-based anodes. - Z90
- PUROYAL SOC CHEMISTRY
- PATHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS,
ENGLAND - SN2055-6756
- VL10
- BP2931
- EP2944
- DI10.1039/d5nh00338e
- UTWOS:001552275100001
- ER
- EF
|
Zhu, Kaichen; Lanza, Mario Pioneering real-time genomic analysis by in-memory computing: In-memory
computing NATURE COMPUTATIONAL SCIENCE, 5 (10), pp. 850-851, 2025, DOI: 10.1038/s43588-025-00883-w. Abstract | BibTeX | Endnote @article{WOS:001589419300001,
title = {Pioneering real-time genomic analysis by in-memory computing: In-memory
computing},
author = {Kaichen Zhu and Mario Lanza},
doi = {10.1038/s43588-025-00883-w},
times_cited = {0},
year = {2025},
date = {2025-10-01},
journal = {NATURE COMPUTATIONAL SCIENCE},
volume = {5},
number = {10},
pages = {850-851},
publisher = {SPRINGERNATURE},
address = {CAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND},
abstract = {Rapid identification of pathogenic viruses remains a critical challenge.
A recent study advances this frontier by demonstrating a fully
integrated memristor-based hardware system that accelerates genomic
analysis by a factor of 51, while reducing energy consumption to just
0.2% of that required by conventional computational methods.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Rapid identification of pathogenic viruses remains a critical challenge.
A recent study advances this frontier by demonstrating a fully
integrated memristor-based hardware system that accelerates genomic
analysis by a factor of 51, while reducing energy consumption to just
0.2% of that required by conventional computational methods. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFKaichen Zhu
Mario Lanza
- TIPioneering real-time genomic analysis by in-memory computing: In-memory
computing - SONATURE COMPUTATIONAL SCIENCE
- DTArticle
- ABRapid identification of pathogenic viruses remains a critical challenge.
A recent study advances this frontier by demonstrating a fully
integrated memristor-based hardware system that accelerates genomic
analysis by a factor of 51, while reducing energy consumption to just
0.2% of that required by conventional computational methods. - Z90
- PUSPRINGERNATURE
- PACAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND
- VL5
- BP850
- EP851
- DI10.1038/s43588-025-00883-w
- UTWOS:001589419300001
- ER
- EF
|
Zheng, Wenwen; Pazos, Sebastian; Yuan, Yue; Zhu, Kaichen; Shen, Yaqing; Ping, Yue; Alharbi, Osamah; Krotkus, Simonas; Pasko, Sergej; Mischke, Jan; Yengel, Emre; Henning, Alex; Elkazzi, Salim; Lanza, Mario Scalable Production of Highly-Reliable Graphene-Based Microchips ADVANCED MATERIALS, 37 (43), 2025, DOI: 10.1002/adma.202510501. Abstract | BibTeX | Endnote @article{WOS:001549394900001,
title = {Scalable Production of Highly-Reliable Graphene-Based Microchips},
author = {Wenwen Zheng and Sebastian Pazos and Yue Yuan and Kaichen Zhu and Yaqing Shen and Yue Ping and Osamah Alharbi and Simonas Krotkus and Sergej Pasko and Jan Mischke and Emre Yengel and Alex Henning and Salim Elkazzi and Mario Lanza},
doi = {10.1002/adma.202510501},
times_cited = {0},
issn = {0935-9648},
year = {2025},
date = {2025-10-01},
journal = {ADVANCED MATERIALS},
volume = {37},
number = {43},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Graphene is a gapless 2D material that could be used to fabricate
superior electronic devices and circuits, particularly useful in the
fields of telecommunication and sensing. While promising performance has
been demonstrated at the laboratory scale, graphene integrated circuits
at the wafer level suffer from poor reliability due to native defects,
especially at interfaces with dielectrics and electrodes. Here, we show
the fabrication of highly reliable graphene-based microchips, containing
transistors and frequency doublers, on 200 mm wafers through a
multi-project wafer tape-out. Our transistors use multilayer hexagonal
boron nitride (hBN) as gate dielectric, and they exhibit record
performance in terms of reliability. In particular, our hBN/graphene
transistors show ultra-low hysteresis below 20 mV and negligible shifts
of the on-state current and the charge neutrality point even after 2100
cycles. The ultra-stable response of our hBN/graphene transistors
contrasts with that of devices using metal-oxide gate dielectrics (HfO2,
Al2O3), which exhibit severe degradation after a few dozens of cycles.
These results, consistent across multiple devices, show low variability
and demonstrate a scalable process for mass production of graphene-based
microchips.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Graphene is a gapless 2D material that could be used to fabricate
superior electronic devices and circuits, particularly useful in the
fields of telecommunication and sensing. While promising performance has
been demonstrated at the laboratory scale, graphene integrated circuits
at the wafer level suffer from poor reliability due to native defects,
especially at interfaces with dielectrics and electrodes. Here, we show
the fabrication of highly reliable graphene-based microchips, containing
transistors and frequency doublers, on 200 mm wafers through a
multi-project wafer tape-out. Our transistors use multilayer hexagonal
boron nitride (hBN) as gate dielectric, and they exhibit record
performance in terms of reliability. In particular, our hBN/graphene
transistors show ultra-low hysteresis below 20 mV and negligible shifts
of the on-state current and the charge neutrality point even after 2100
cycles. The ultra-stable response of our hBN/graphene transistors
contrasts with that of devices using metal-oxide gate dielectrics (HfO2,
Al2O3), which exhibit severe degradation after a few dozens of cycles.
These results, consistent across multiple devices, show low variability
and demonstrate a scalable process for mass production of graphene-based
microchips. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFWenwen Zheng
Sebastian Pazos
Yue Yuan
Kaichen Zhu
Yaqing Shen
Yue Ping
Osamah Alharbi
Simonas Krotkus
Sergej Pasko
Jan Mischke
Emre Yengel
Alex Henning
Salim Elkazzi
Mario Lanza
- TIScalable Production of Highly-Reliable Graphene-Based Microchips
- SOADVANCED MATERIALS
- DTArticle
- ABGraphene is a gapless 2D material that could be used to fabricate
superior electronic devices and circuits, particularly useful in the
fields of telecommunication and sensing. While promising performance has
been demonstrated at the laboratory scale, graphene integrated circuits
at the wafer level suffer from poor reliability due to native defects,
especially at interfaces with dielectrics and electrodes. Here, we show
the fabrication of highly reliable graphene-based microchips, containing
transistors and frequency doublers, on 200 mm wafers through a
multi-project wafer tape-out. Our transistors use multilayer hexagonal
boron nitride (hBN) as gate dielectric, and they exhibit record
performance in terms of reliability. In particular, our hBN/graphene
transistors show ultra-low hysteresis below 20 mV and negligible shifts
of the on-state current and the charge neutrality point even after 2100
cycles. The ultra-stable response of our hBN/graphene transistors
contrasts with that of devices using metal-oxide gate dielectrics (HfO2,
Al2O3), which exhibit severe degradation after a few dozens of cycles.
These results, consistent across multiple devices, show low variability
and demonstrate a scalable process for mass production of graphene-based
microchips. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN0935-9648
- VL37
- DI10.1002/adma.202510501
- UTWOS:001549394900001
- ER
- EF
|
Rao, Yifan; Lee, Jong Hak; Pu, Yanhui; Ong, Yong Kang; Shi, Lu; Lai, Wenhui; Limpo, Carlos; Yuan, Yue; Xiong, Ting; Lanza, Mario; Ozyilmaz, Barbaros Reinforcement-free monolithic all-in-one structural supercapacitors CHEMICAL ENGINEERING JOURNAL, 519 , 2025, DOI: 10.1016/j.cej.2025.165492. Abstract | BibTeX | Endnote @article{WOS:001532082000001,
title = {Reinforcement-free monolithic all-in-one structural supercapacitors},
author = {Yifan Rao and Jong Hak Lee and Yanhui Pu and Yong Kang Ong and Lu Shi and Wenhui Lai and Carlos Limpo and Yue Yuan and Ting Xiong and Mario Lanza and Barbaros Ozyilmaz},
doi = {10.1016/j.cej.2025.165492},
times_cited = {0},
issn = {1385-8947},
year = {2025},
date = {2025-09-01},
journal = {CHEMICAL ENGINEERING JOURNAL},
volume = {519},
publisher = {ELSEVIER SCIENCE SA},
address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
abstract = {Structural supercapacitors, potential game-changers for various
applications such as aerospace, automotive, and construction industries,
offer a combination of energy storage and load-bearing functionalities.
Conventional approaches, however, have been hindered by a significant
decrease in overall energy storage performance due to the inherent
separation of energy storage components and structural reinforcement
elements. In this study, we report reinforcement-free all-in-one
structural supercapacitors that tailor the conventional trade-off
problem between energy capacity and mechanical strength by ensuring that
the essential energy storage components possess high mechanical
properties. This dual-functional structure ensures that it
volumetrically constitutes nearly 90% of the cells excluding the
packaging. Simultaneously, by employing interlocking interfacial
engineering, we optimize the functionalities of these components,
enhancing the overall robustness and energy capacity of the device.
Consequently, our structural supercapacitor demonstrates good structural
integrity, as evidenced by its flexural modulus of 8.34 GPa. Moreover,
our supercapacitor stands out in terms of energy storage capacity,
boasting a volumetric energy density of 45 Wh/L. This achievement,
outperforming the current state-of-the-art by a staggering tenfold,
significantly enhances multifunctionality, a critical index for
evaluating structural energy devices, reaching a 9.95 rating. This novel
strategy provides insight for other structural energy storage devices
with higher multifunctional efficiency.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Structural supercapacitors, potential game-changers for various
applications such as aerospace, automotive, and construction industries,
offer a combination of energy storage and load-bearing functionalities.
Conventional approaches, however, have been hindered by a significant
decrease in overall energy storage performance due to the inherent
separation of energy storage components and structural reinforcement
elements. In this study, we report reinforcement-free all-in-one
structural supercapacitors that tailor the conventional trade-off
problem between energy capacity and mechanical strength by ensuring that
the essential energy storage components possess high mechanical
properties. This dual-functional structure ensures that it
volumetrically constitutes nearly 90% of the cells excluding the
packaging. Simultaneously, by employing interlocking interfacial
engineering, we optimize the functionalities of these components,
enhancing the overall robustness and energy capacity of the device.
Consequently, our structural supercapacitor demonstrates good structural
integrity, as evidenced by its flexural modulus of 8.34 GPa. Moreover,
our supercapacitor stands out in terms of energy storage capacity,
boasting a volumetric energy density of 45 Wh/L. This achievement,
outperforming the current state-of-the-art by a staggering tenfold,
significantly enhances multifunctionality, a critical index for
evaluating structural energy devices, reaching a 9.95 rating. This novel
strategy provides insight for other structural energy storage devices
with higher multifunctional efficiency. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFYifan Rao
Jong Hak Lee
Yanhui Pu
Yong Kang Ong
Lu Shi
Wenhui Lai
Carlos Limpo
Yue Yuan
Ting Xiong
Mario Lanza
Barbaros Ozyilmaz
- TIReinforcement-free monolithic all-in-one structural supercapacitors
- SOCHEMICAL ENGINEERING JOURNAL
- DTArticle
- ABStructural supercapacitors, potential game-changers for various
applications such as aerospace, automotive, and construction industries,
offer a combination of energy storage and load-bearing functionalities.
Conventional approaches, however, have been hindered by a significant
decrease in overall energy storage performance due to the inherent
separation of energy storage components and structural reinforcement
elements. In this study, we report reinforcement-free all-in-one
structural supercapacitors that tailor the conventional trade-off
problem between energy capacity and mechanical strength by ensuring that
the essential energy storage components possess high mechanical
properties. This dual-functional structure ensures that it
volumetrically constitutes nearly 90% of the cells excluding the
packaging. Simultaneously, by employing interlocking interfacial
engineering, we optimize the functionalities of these components,
enhancing the overall robustness and energy capacity of the device.
Consequently, our structural supercapacitor demonstrates good structural
integrity, as evidenced by its flexural modulus of 8.34 GPa. Moreover,
our supercapacitor stands out in terms of energy storage capacity,
boasting a volumetric energy density of 45 Wh/L. This achievement,
outperforming the current state-of-the-art by a staggering tenfold,
significantly enhances multifunctionality, a critical index for
evaluating structural energy devices, reaching a 9.95 rating. This novel
strategy provides insight for other structural energy storage devices
with higher multifunctional efficiency. - Z90
- PUELSEVIER SCIENCE SA
- PAPO BOX 564, 1001 LAUSANNE, SWITZERLAND
- SN1385-8947
- VL519
- DI10.1016/j.cej.2025.165492
- UTWOS:001532082000001
- ER
- EF
|
