2024
|
Grzeszczyk, Magdalena; Vaklinova, Kristina; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Konstantin S; Koperski, Maciej Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions LIGHT-SCIENCE & APPLICATIONS, 13 (1), 2024, DOI: 10.1038/s41377-024-01491-5. Abstract | BibTeX | Endnote @article{ISI:001265495000003,
title = {Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions},
author = {Magdalena Grzeszczyk and Kristina Vaklinova and Kenji Watanabe and Takashi Taniguchi and Konstantin S Novoselov and Maciej Koperski},
doi = {10.1038/s41377-024-01491-5},
times_cited = {0},
issn = {2095-5545},
year = {2024},
date = {2024-07-08},
journal = {LIGHT-SCIENCE & APPLICATIONS},
volume = {13},
number = {1},
publisher = {SPRINGERNATURE},
address = {CAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND},
abstract = {Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.},
keywords = {},
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Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUGrzeszczyk, M
Vaklinova, K
Watanabe, K
Taniguchi, T
Novoselov, KS
Koperski, M
- AFMagdalena Grzeszczyk
Kristina Vaklinova
Kenji Watanabe
Takashi Taniguchi
Konstantin S Novoselov
Maciej Koperski
- TIElectroluminescence from pure resonant states in hBN-based vertical tunneling junctions
- SOLIGHT-SCIENCE & APPLICATIONS
- LAEnglish
- DTArticle
- IDNUCLEAR-SPIN QUBITS; BORON-NITRIDE; ELECTRON; EMISSION; DYNAMICS; DIAMOND; CENTERS
- ABDefect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide, have been notoriously difficult to excite electrically due to their large internal resistance. To address this challenge, we realized a new paradigm of exciting defects in vertical tunneling junctions based on carbon centers in hexagonal boron nitride (hBN). The rational design of the devices via van der Waals technology enabled us to raise and control optical processes related to defect-to-band and intradefect electroluminescence. The fundamental understanding of the tunneling events was based on the transfer of the electronic wave function amplitude between resonant defect states in hBN to the metallic state in graphene, which leads to dramatic changes in the characteristics of electrons due to different band structures of constituent materials. In our devices, the decay of electrons via tunneling pathways competed with radiative recombination, resulting in an unprecedented degree of tuneability of carrier dynamics due to the significant sensitivity of the characteristic tunneling times on the thickness and structure of the barrier. This enabled us to achieve a high-efficiency electrical excitation of intradefect transitions, exceeding by several orders of magnitude the efficiency of optical excitation in the sub-band-gap regime. This work represents a significant advancement towards a universal and scalable platform for electrically driven devices utilizing defect centers in wide-band-gap crystals with properties modulated via activation of different tunneling mechanisms at a level of device engineering.
- C1[Grzeszczyk, Magdalena; Vaklinova, Kristina; Novoselov, Konstantin S.; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Watanabe, Kenji] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba 3050044, Japan. [Taniguchi, Takashi] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan. [Novoselov, Konstantin S.; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore - C3Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National Institute for Materials Science; National Institute for Materials Science; National University of Singapore
- RPGrzeszczyk, M (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Koperski, M (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
- FUMinistry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018- T3-1-005). [EDUN C-33-18-279-V12, MOE2018-T3-1-005]; Ministry of Education (Singapore) through the Research Centre of Excellence program [MOE-T2EP50122-0012]; Ministry of Education, Singapore [FA8655-21-1-7026]; Air Force Office of Scientific Research [19H05790, 20H00354, 21H05233]; Office of Naval Research Global; JSPS KAKENHI
- FXThis project was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018-T3-1-005). This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012). This material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354, and 21H05233).DAS:The data that support the findings of this study are openly available at the following https://doi.org/10.58132/B4QQ5E.
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Kipczak, Lucja; Karmakar, Arka; Grzeszczyk, Magdalena; Janiszewska, Roza; Wozniak, Tomasz; Chen, Zhaolong; Pawlowski, Jan; Watanabe, Kenji; Taniguchi, Takashi; Babinski, Adam; Koperski, Maciej; Molas, Maciej R Resonant Raman scattering of few layers CrBr3 SCIENTIFIC REPORTS, 14 (1), 2024, DOI: 10.1038/s41598-024-57622-w. Abstract | BibTeX | Endnote @article{ISI:001195862400057,
title = {Resonant Raman scattering of few layers CrBr_{3}},
author = {Lucja Kipczak and Arka Karmakar and Magdalena Grzeszczyk and Roza Janiszewska and Tomasz Wozniak and Zhaolong Chen and Jan Pawlowski and Kenji Watanabe and Takashi Taniguchi and Adam Babinski and Maciej Koperski and Maciej R Molas},
doi = {10.1038/s41598-024-57622-w},
times_cited = {0},
issn = {2045-2322},
year = {2024},
date = {2024-03-29},
journal = {SCIENTIFIC REPORTS},
volume = {14},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr3) with a thickness ranging from three to twenty layers (3-20 L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr3, 3.06 eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr3 and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the Ag and Eg modes. The evolution of phonon modes with temperature for a 16 L CrBr3 encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature (T-C approximate to 50 K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3-5 L. We propose that this observation can be due to the strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers.},
keywords = {},
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tppubtype = {article}
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We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr3) with a thickness ranging from three to twenty layers (3-20 L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr3, 3.06 eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr3 and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the Ag and Eg modes. The evolution of phonon modes with temperature for a 16 L CrBr3 encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature (T-C approximate to 50 K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3-5 L. We propose that this observation can be due to the strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUKipczak, L
Karmakar, A
Grzeszczyk, M
Janiszewska, R
Wozniak, T
Chen, ZL
Pawlowski, J
Watanabe, K
Taniguchi, T
Babinski, A
Koperski, M
Molas, MR
- AFLucja Kipczak
Arka Karmakar
Magdalena Grzeszczyk
Roza Janiszewska
Tomasz Wozniak
Zhaolong Chen
Jan Pawlowski
Kenji Watanabe
Takashi Taniguchi
Adam Babinski
Maciej Koperski
Maciej R Molas
- TIResonant Raman scattering of few layers CrBr3
- SOSCIENTIFIC REPORTS
- LAEnglish
- DTArticle
- IDINITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; MAGNETIC-PROPERTIES; PHONON; TRANSITION; SPECTRA
- ABWe investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr3) with a thickness ranging from three to twenty layers (3-20 L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr3, 3.06 eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr3 and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the Ag and Eg modes. The evolution of phonon modes with temperature for a 16 L CrBr3 encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature (T-C approximate to 50 K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3-5 L. We propose that this observation can be due to the strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers.
- C3University of Warsaw; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; Wroclaw University of Science & Technology; University of Warsaw; Peking University; National Institute for Materials Science; National Institute for Materials Science; National University of Singapore
- RPKipczak, L (corresponding author), Warsaw Univ, Fac Phys, Inst Expt Phys, Pasteura 5, PL-02 093 Warsaw, Poland
- FXThe work was supported by the National Science Centre, Poland (Grant No. 2020/37/B/ST3/02311), the Ministry of Education (Singapore) through the Research Centre of Excellence program (Grant EDUN C-33-18-279-V12, I-FIM) and under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012), and the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. The calculations were carried out with the support of the Interdisciplinary Centre for Mathematical and Computational Modelling University of Warsaw (ICM UW) under computational allocation no G95-1773. T. W. acknowledge support form the National Science Centre Grant No. 2023/48/C/ST3/00309. K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Numbers 21H05233 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan.
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- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
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|
Grebenchuk, Sergey; Mckeever, Conor; Grzeszczyk, Magdalena; Chen, Zhaolong; Siskins, Makars; McCray, Arthur R C; Li, Yue; Petford-Long, Amanda K; Phatak, Charudatta M; Ruihuan, Duan; Zheng, Liu; Novoselov, Kostya S; Santos, Elton J G; Koperski, Maciej Topological Spin Textures in an Insulating van der Waals Ferromagnet ADVANCED MATERIALS, 2024, DOI: 10.1002/adma.202311949. Abstract | BibTeX | Endnote @article{ISI:001177264100001,
title = {Topological Spin Textures in an Insulating van der Waals Ferromagnet},
author = {Sergey Grebenchuk and Conor Mckeever and Magdalena Grzeszczyk and Zhaolong Chen and Makars Siskins and Arthur R C McCray and Yue Li and Amanda K Petford-Long and Charudatta M Phatak and Duan Ruihuan and Liu Zheng and Kostya S Novoselov and Elton J G Santos and Maciej Koperski},
doi = {10.1002/adma.202311949},
times_cited = {1},
issn = {0935-9648},
year = {2024},
date = {2024-03-04},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Generation and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Neel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level.},
keywords = {},
pubstate = {published},
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Generation and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Neel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUGrebenchuk, S
Mckeever, C
Grzeszczyk, M
Chen, ZL
Siskins, M
McCray, ARC
Li, Y
Petford-Long, AK
Phatak, CM
Ruihuan, D
Zheng, L
Novoselov, KS
Santos, EJG
Koperski, M
- AFSergey Grebenchuk
Conor Mckeever
Magdalena Grzeszczyk
Zhaolong Chen
Makars Siskins
Arthur R C McCray
Yue Li
Amanda K Petford-Long
Charudatta M Phatak
Duan Ruihuan
Liu Zheng
Kostya S Novoselov
Elton J G Santos
Maciej Koperski
- TITopological Spin Textures in an Insulating van der Waals Ferromagnet
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DEFerromagnets; Magnetic Force Microscopy; Photoluminescence; Skyrmions; Topological Spin Textures
- IDNEEL-TYPE SKYRMION; MAGNETIC SKYRMIONS; LATTICE; DYNAMICS
- ABGeneration and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Neel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level.
- C1[Grebenchuk, Sergey; Grzeszczyk, Magdalena; Chen, Zhaolong; Siskins, Makars; Novoselov, Kostya S.; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Grebenchuk, Sergey; Novoselov, Kostya S.; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore. [Mckeever, Conor; Santos, Elton J. G.] Univ Edinburgh, Inst Condensed Matter Phys & Complex Syst, Sch Phys & Astron, Edinburgh EH9 3FD, Scotland. [McCray, Arthur R. C.; Li, Yue; Petford-Long, Amanda K.; Phatak, Charudatta M.] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA. [McCray, Arthur R. C.] Northwestern Univ, Appl Phys Program, Evanston, IL 60208 USA. [Petford-Long, Amanda K.; Phatak, Charudatta M.] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA. [Ruihuan, Duan; Zheng, Liu] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore. [Ruihuan, Duan] Nanyang Technol Univ, CINTRA CNRS NTU THALES, UMI 3288, Res Techno Plaza, Singapore 639798, Singapore. [Santos, Elton J. G.] Univ Edinburgh, Higgs Ctr Theoret Phys, Edinburgh EH9 3FD, Scotland. [Santos, Elton J. G.] Donostia Int Phys Ctr DIPC, Donostia San Sebastian 20018, Basque Country, Spain - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; University of Edinburgh; United States Department of Energy (DOE); Argonne National Laboratory; Northwestern University; Northwestern University; Nanyang Technological University; Nanyang Technological University; University of Edinburgh
- RPGrebenchuk, S (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Grebenchuk, S (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore; Santos, EJG (corresponding author), Univ Edinburgh, Inst Condensed Matter Phys & Complex Syst, Sch Phys & Astron, Edinburgh EH9 3FD, Scotland; Santos, EJG (corresponding author), Univ Edinburgh, Higgs Ctr Theoret Phys, Edinburgh EH9 3FD, Scotland; Santos, EJG (corresponding author), Donostia Int Phys Ctr DIPC, Donostia San Sebastian 20018, Basque Country, Spain
- FUMinistry of Education (Singapore) [EDUN C-33-18-279-V12]; Ministry of Education (Singapore) through the Research Centre of Excellence program [MOE-T2EP50122-0012]; Ministry of Education, Singapore [NRF-CRP22-2019-0007]; National Research Foundation, Singapore, under its Competitive Research Programme (CRP) [MOE2018-T3-1-002]; Singapore Ministry of Education Tier 3 Programme "Geometrical Quantum Materials" AcRF Tier 3 [FA8655-21-1-7026]; Air Force Office of Scientific Research [EP/P020267/1]; Office of Naval Research Global [d429]; University of Edinburgh [EP/T021578/1]; EPSRC [DE-AC02-06CH11357]; ARCHER UK National Supercomputing Service; EPSRC Open Fellowship; US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
- FXThis project was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM). This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012). Z.L. acknowledges the support from National Research Foundation, Singapore, under its Competitive Research Programme (CRP) (NRF-CRP22-2019-0007), the Singapore Ministry of Education Tier 3 Programme "Geometrical Quantum Materials" AcRF Tier 3 (MOE2018-T3-1-002). This material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. E.J.G.S. acknowledges computational resources through CIRRUS Tier-2 HPC Service (ec131 Cirrus Project) at EPCC () funded by the University of Edinburgh and EPSRC (EP/P020267/1); ARCHER UK National Supercomputing Service () via Project d429. E.J.G.S. acknowledges the EPSRC Open Fellowship (EP/T021578/1), and the Edinburgh-Rice Strategic Collaboration Awards for funding support. Work from A.R.C.M., Y.L. A.K.P. and C.M.P. was funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division. Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. For the purpose of open access, the authors have applied a creative commons attribution (CC BY) licence to any author accepted manuscript version arising.
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2023
|
Arfaoui, Mehdi; Zawadzka, Natalia; Ayari, Sabrine; Chen, Zhaolong; Watanabe, Kenji; Taniguchi, Takashi; Babinski, Adam; Koperski, Maciej; Jaziri, Sihem; Molas, Maciej R Optical properties of orthorhombic germanium sulfide: unveiling the anisotropic nature of Wannier excitons NANOSCALE, 15 (42), pp. 17014-17028, 2023, DOI: 10.1039/d3nr03168c. Abstract | BibTeX | Endnote @article{ISI:001119467400001,
title = {Optical properties of orthorhombic germanium sulfide: unveiling the anisotropic nature of Wannier excitons},
author = {Mehdi Arfaoui and Natalia Zawadzka and Sabrine Ayari and Zhaolong Chen and Kenji Watanabe and Takashi Taniguchi and Adam Babinski and Maciej Koperski and Sihem Jaziri and Maciej R Molas},
doi = {10.1039/d3nr03168c},
times_cited = {0},
issn = {2040-3364},
year = {2023},
date = {2023-10-16},
journal = {NANOSCALE},
volume = {15},
number = {42},
pages = {17014-17028},
publisher = {ROYAL SOC CHEMISTRY},
address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND},
abstract = {To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, ab initio calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. By combining ab initio calculations and EMA methods, we investigated the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly non-hydrogenic features. A very good agreement with the experiment is observed.},
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To fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, ab initio calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. By combining ab initio calculations and EMA methods, we investigated the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly non-hydrogenic features. A very good agreement with the experiment is observed. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUArfaoui, M
Zawadzka, N
Ayari, S
Chen, ZL
Watanabe, K
Taniguchi, T
Babinski, A
Koperski, M
Jaziri, S
Molas, MR
- AFMehdi Arfaoui
Natalia Zawadzka
Sabrine Ayari
Zhaolong Chen
Kenji Watanabe
Takashi Taniguchi
Adam Babinski
Maciej Koperski
Sihem Jaziri
Maciej R Molas
- TIOptical properties of orthorhombic germanium sulfide: unveiling the anisotropic nature of Wannier excitons
- SONANOSCALE
- LAEnglish
- DTArticle
- IDSEMICONDUCTOR; ABSORPTION; MONOLAYER; GES; APPROXIMATION; EXCITATIONS; OXIDATION; ENERGY
- ABTo fully explore exciton-based applications and improve their performance, it is essential to understand the exciton behavior in anisotropic materials. Here, we investigate the optical properties of anisotropic excitons in GeS encapsulated by h-BN using different approaches that combine polarization- and temperature-dependent photoluminescence (PL) measurements, ab initio calculations, and effective mass approximation (EMA). Using the Bethe-Salpeter Equation (BSE) method, we found that the optical absorption spectra in GeS are significantly affected by the Coulomb interaction included in the BSE method, which shows the importance of excitonic effects besides it exhibits a significant dependence on the direction of polarization, revealing the anisotropic nature of bulk GeS. By combining ab initio calculations and EMA methods, we investigated the quasi-hydrogenic exciton states and oscillator strength (OS) of GeS along the zigzag and armchair axes. We found that the anisotropy induces lifting of the degeneracy and mixing of the excitonic states in GeS, which results in highly non-hydrogenic features. A very good agreement with the experiment is observed.
- C1[Arfaoui, Mehdi; Jaziri, Sihem] Univ Tunis El Manar, Fac Sci Tunis, Dept Phys, Lab Phys Matiere Condensee, Campus Univ, Tunis 1060, Tunisia.
[Zawadzka, Natalia; Babinski, Adam; Molas, Maciej R.] Univ Warsaw, Inst Expt Phys, Fac Phys, Warsaw, Poland. [Ayari, Sabrine] Univ Paris, Univ PSL, Sorbonne Univ, Lab Phys Ecole Normale Super,ENS,CNRS, 24 Rue Lhomond, F-75005 Paris, France. [Chen, Zhaolong; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117575, Singapore. [Chen, Zhaolong; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore. [Watanabe, Kenji] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan. [Taniguchi, Takashi] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan - C3Universite de Tunis-El-Manar; Faculte des Sciences de Tunis (FST); University of Warsaw; Sorbonne Universite; Universite Paris Cite; Universite PSL; Ecole Normale Superieure (ENS); Centre National de la Recherche Scientifique (CNRS); National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National Institute for Materials Science; National Institute for Materials Science
- RPArfaoui, M (corresponding author), Univ Tunis El Manar, Fac Sci Tunis, Dept Phys, Lab Phys Matiere Condensee, Campus Univ, Tunis 1060, Tunisia
- FUNarodowym Centrum Nauki [2017/27/B/ST3/00205, 2018/31/B/ST3/02111]; National Science Centre, Poland [EDUN C-33-18-279-V12, MOE-T2EP50122-0012]; Ministry of Education (Singapore) through the Research Centre of Excellence Program [FA8655-21-1-7026]; Air Force Office of Scientific Research [20H00354, 23H02052]; Office of Naval Research Global; JSPS KAKENHI; World Premier International Research Center Initiative (WPI), MEXT, Japan
- FXThis work was supported by the National Science Centre, Poland (Grant No. 2017/27/B/ST3/00205 and 2018/31/B/ST3/02111), the Ministry of Education (Singapore) through the Research Centre of Excellence Program (grant EDUN C-33-18-279-V12, I-FIM) and under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012), and the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. K. W. and T. T. acknowledge the support from the JSPS KAKENHI (Grant Numbers 20H00354 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan.
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del aguila, Andres Granados; Wong, Yi Ren; Wadgaonkar, Indrajit; Fieramosca, Antonio; Liu, Xue; Vaklinova, Kristina; Forno, Stefano Dal; Do, Thu Ha T; Wei, Ho Yi; Watanabe, Kristina; Taniguchi, T; Novoselov, Kostya S; Koperski, Maciej; Battiato, Marco; Xiong, Qihua Ultrafast exciton fluid flow in an atomically thin MoS2 semiconductor NATURE NANOTECHNOLOGY, 18 (9), pp. 1012-+, 2023, DOI: 10.1038/s41565-023-01438-8. Abstract | BibTeX | Endnote @article{ISI:001040143800002,
title = {Ultrafast exciton fluid flow in an atomically thin MoS_{2} semiconductor},
author = {Andres Granados del aguila and Yi Ren Wong and Indrajit Wadgaonkar and Antonio Fieramosca and Xue Liu and Kristina Vaklinova and Stefano Dal Forno and Thu Ha T Do and Ho Yi Wei and Kristina Watanabe and T Taniguchi and Kostya S Novoselov and Maciej Koperski and Marco Battiato and Qihua Xiong},
doi = {10.1038/s41565-023-01438-8},
times_cited = {5},
issn = {1748-3387},
year = {2023},
date = {2023-07-31},
journal = {NATURE NANOTECHNOLOGY},
volume = {18},
number = {9},
pages = {1012-+},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Excitons (coupled electron-hole pairs) in semiconductors can form collective states that sometimes exhibit spectacular nonlinear properties. Here, we show experimental evidence of a collective state of short-lived excitons in a direct-bandgap, atomically thin MoS2 semiconductor whose propagation resembles that of a classical liquid as suggested by the nearly uniform photoluminescence through the MoS2 monolayer regardless of crystallographic defects and geometric constraints. The exciton fluid flows over ultralong distances (at least 60 mu m) at a speed of similar to 1.8 x 10(7) m s(-1) (similar to 6% the speed of light). The collective phase emerges above a critical laser power, in the absence of free charges and below a critical temperature (usually T-c approximate to 150 K) approaching room temperature in hexagonal-boron-nitride-encapsulated devices. Our theoretical simulations suggest that momentum is conserved and local equilibrium is achieved among excitons; both these features are compatible with a fluid dynamics description of the exciton transport.},
keywords = {},
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Excitons (coupled electron-hole pairs) in semiconductors can form collective states that sometimes exhibit spectacular nonlinear properties. Here, we show experimental evidence of a collective state of short-lived excitons in a direct-bandgap, atomically thin MoS2 semiconductor whose propagation resembles that of a classical liquid as suggested by the nearly uniform photoluminescence through the MoS2 monolayer regardless of crystallographic defects and geometric constraints. The exciton fluid flows over ultralong distances (at least 60 mu m) at a speed of similar to 1.8 x 10(7) m s(-1) (similar to 6% the speed of light). The collective phase emerges above a critical laser power, in the absence of free charges and below a critical temperature (usually T-c approximate to 150 K) approaching room temperature in hexagonal-boron-nitride-encapsulated devices. Our theoretical simulations suggest that momentum is conserved and local equilibrium is achieved among excitons; both these features are compatible with a fluid dynamics description of the exciton transport. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUdel Aguila, AG
Wong, YR
Wadgaonkar, I
Fieramosca, A
Liu, X
Vaklinova, K
Dal Forno, S
Do, TTH
Wei, HY
Watanabe, K
Taniguchi, T
Novoselov, KS
Koperski, M
Battiato, M
Xiong, QH
- AFAndres Granados del aguila
Yi Ren Wong
Indrajit Wadgaonkar
Antonio Fieramosca
Xue Liu
Kristina Vaklinova
Stefano Dal Forno
Thu Ha T Do
Ho Yi Wei
Kristina Watanabe
T Taniguchi
Kostya S Novoselov
Maciej Koperski
Marco Battiato
Qihua Xiong
- TIUltrafast exciton fluid flow in an atomically thin MoS2 semiconductor
- SONATURE NANOTECHNOLOGY
- LAEnglish
- DTArticle
- IDMONOLAYER; TRANSPORT; DIFFUSION; LIQUID; STATE
- ABExcitons (coupled electron-hole pairs) in semiconductors can form collective states that sometimes exhibit spectacular nonlinear properties. Here, we show experimental evidence of a collective state of short-lived excitons in a direct-bandgap, atomically thin MoS2 semiconductor whose propagation resembles that of a classical liquid as suggested by the nearly uniform photoluminescence through the MoS2 monolayer regardless of crystallographic defects and geometric constraints. The exciton fluid flows over ultralong distances (at least 60 mu m) at a speed of similar to 1.8 x 10(7) m s(-1) (similar to 6% the speed of light). The collective phase emerges above a critical laser power, in the absence of free charges and below a critical temperature (usually T-c approximate to 150 K) approaching room temperature in hexagonal-boron-nitride-encapsulated devices. Our theoretical simulations suggest that momentum is conserved and local equilibrium is achieved among excitons; both these features are compatible with a fluid dynamics description of the exciton transport.
- C3Nanyang Technological University; Anhui University; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Agency for Science Technology & Research (A*STAR); A*STAR - Institute of Materials Research & Engineering (IMRE); National University of Singapore; National Institute for Materials Science; National University of Singapore; Tsinghua University; Tsinghua University; Beijing Academy of Quantum Information Sciences
- RPdel Aguila, AG (corresponding author), Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore; Xiong, QH (corresponding author), Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing, Peoples R China; Xiong, QH (corresponding author), Tsinghua Univ, Dept Phys, Beijing, Peoples R China; Xiong, QH (corresponding author), Frontier Sci Ctr Quantum Informat, Beijing, Peoples R China; Xiong, QH (corresponding author), Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China; Xiong, QH (corresponding author), Beijing Acad Quantum Informat Sci, Beijing, Peoples R China
- FXQ.X. gratefully acknowledges funding support from National Natural Science Foundation of China (12250710126), strong support from the State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University Initiative Scientific Research Program and a start-up grant from Tsinghua University. M.B. gratefully acknowledges support from the Nanyang Technological University for an NAP-SUG grant. This research is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM, project number EDUNC-33-18-279-V12). M.K. acknowledges that this material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research under award number FA8655-21-1-7021. This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012) and Tier 3 (MOE2018-T3-1-005). X.L. gratefully acknowledges support from the National Natural Science Foundation of China (12104006), and the Center of Strong Laser and High Magnetic Field at Anhui University. K.W. and T.T. acknowledge support from the EMEXT Element Strategy Initiative to Form Core Research Center through grant number JPMXP0112101001 and the CREST(JPMJCR15F3), JST. A.G.d.A gratefully acknowledges financial support from the Singapore Ministry of Education via AcRF Tier 3 Programme Geometrical Quantum Materials (MOE2018-T3-1-002) and from the Presidential Postdoctoral Fellowship programme of the Nanyang Technological University. We thank T. C. H. Liew, A. Alvarez Fernandez, I. Bar-Joseph and F. Dubin for fruitful discussions and suggestions on this manuscript.
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