2024
|
Qiu, Zhizhan; Vaklinova, Kristina; Huang, Pengru; Grzeszczyk, Magdalena; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Kostya S; Lu, Jiong; Koperski, Maciej Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities ACS NANO, 2024, DOI: 10.1021/acsnano.4c03640. Abstract | BibTeX | Endnote @article{ISI:001295117800001,
title = {Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities},
author = {Zhizhan Qiu and Kristina Vaklinova and Pengru Huang and Magdalena Grzeszczyk and Kenji Watanabe and Takashi Taniguchi and Kostya S Novoselov and Jiong Lu and Maciej Koperski},
doi = {10.1021/acsnano.4c03640},
times_cited = {0},
issn = {1936-0851},
year = {2024},
date = {2024-08-20},
journal = {ACS NANO},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their midgap electronic structure and orbital/spin wave function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic midgap states to the well-established photoluminescence response (including single-photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: (1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM and (2) multisite defect complexes exhibiting a ladder of empty and occupied midgap states characterized by distinct spatial geometries. Combining direct probing of midgap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.},
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Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their midgap electronic structure and orbital/spin wave function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic midgap states to the well-established photoluminescence response (including single-photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: (1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM and (2) multisite defect complexes exhibiting a ladder of empty and occupied midgap states characterized by distinct spatial geometries. Combining direct probing of midgap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUQiu, ZZ
Vaklinova, K
Huang, PR
Grzeszczyk, M
Watanabe, K
Taniguchi, T
Novoselov, KS
Lu, J
Koperski, M
- AFZhizhan Qiu
Kristina Vaklinova
Pengru Huang
Magdalena Grzeszczyk
Kenji Watanabe
Takashi Taniguchi
Kostya S Novoselov
Jiong Lu
Maciej Koperski
- TIAtomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities
- SOACS NANO
- LAEnglish
- DTArticle
- DE2D Insulators; Hexagonal Boron Nitride; Singledefects; Discrete Midgap States; Wave Function Imaging
- IDBORON-NITRIDE; CENTERS
- ABDefect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their midgap electronic structure and orbital/spin wave function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic midgap states to the well-established photoluminescence response (including single-photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: (1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM and (2) multisite defect complexes exhibiting a ladder of empty and occupied midgap states characterized by distinct spatial geometries. Combining direct probing of midgap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.
- C1[Qiu, Zhizhan; Huang, Pengru; Grzeszczyk, Magdalena; Novoselov, Kostya S.; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore.
[Qiu, Zhizhan; Vaklinova, Kristina; Huang, Pengru; Grzeszczyk, Magdalena; Novoselov, Kostya S.; Lu, Jiong; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Watanabe, Kenji] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Tsukuba 3050044, Japan.
[Taniguchi, Takashi] Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan.
[Lu, Jiong] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National Institute for Materials Science; National Institute for Materials Science; National University of Singapore
- RPKoperski, M (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
- FUMinistry of Education (Singapore) [EDUN C-33-18-279-V12]; AcRF Tier 3 [MOE2018-T3-1-005]; MOE Tier 2 [MOE-T2EP10223-0004, MOE-T2EP10123-0004, MOE-T2EP50122-0012]; Agency for Science, Technology and Research (A*STAR) [M21K2c0113]; Air Force Office of Scientific Research [FA8655-21-1-7026]; Office of Naval Research Global [20H00354, 23H02052]; JSPS KAKENHI [2021YFB3802400]; World Premier International Research Center Initiative (WPI), MEXT, Japan [52161037]; National Key Research and Development Program; National Natural Science Foundation of China
- FXThis project was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM), AcRF Tier 3 (MOE2018-T3-1-005) and MOE Tier 2 grants (MOE-T2EP10223-0004, MOE-T2EP10123-0004, and MOE-T2EP50122-0012), and Agency for Science, Technology and Research (A*STAR) under MTC Individual Research Grants (M21K2c0113). This material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. K.W. and T.T. acknowledge support from the JSPS KAKENHI (Grant Numbers 20H00354 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan. P.H. acknowledges the support from the National Key Research and Development Program (2021YFB3802400) and the National Natural Science Foundation of China (52161037). The computational work for this article was performed on computational resources at the National Supercomputing Center of Singapore (NSCC).
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Lyu, Pin; Wang, Ziying; Guo, Na; Su, Jie; Li, Jing; Qi, Dongchen; Xi, Shibo; Lin, Huihui; Zhang, Qihan; Pennycook, Stephen J; Chen, Jingsheng; Zhao, Xiaoxu; Zhang, Chun; Loh, Kian Ping; Lu, Jiong Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 146 (30), pp. 20604-20614, 2024, DOI: 10.1021/jacs.4c02160. Abstract | BibTeX | Endnote @article{ISI:001281480500001,
title = {Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer},
author = {Pin Lyu and Ziying Wang and Na Guo and Jie Su and Jing Li and Dongchen Qi and Shibo Xi and Huihui Lin and Qihan Zhang and Stephen J Pennycook and Jingsheng Chen and Xiaoxu Zhao and Chun Zhang and Kian Ping Loh and Jiong Lu},
doi = {10.1021/jacs.4c02160},
times_cited = {0},
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year = {2024},
date = {2024-07-18},
journal = {JOURNAL OF THE AMERICAN CHEMICAL SOCIETY},
volume = {146},
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pages = {20604-20614},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.},
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The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications. - FNClarivate Analytics Web of Science
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Wang, ZY
Guo, N
Su, J
Li, J
Qi, DC
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Lin, HH
Zhang, QH
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Chen, JS
Zhao, XX
Zhang, C
Loh, KP
Lu, J
- AFPin Lyu
Ziying Wang
Na Guo
Jie Su
Jing Li
Dongchen Qi
Shibo Xi
Huihui Lin
Qihan Zhang
Stephen J Pennycook
Jingsheng Chen
Xiaoxu Zhao
Chun Zhang
Kian Ping Loh
Jiong Lu
- TIAir-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer
- SOJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- LAEnglish
- DTArticle
- ABThe pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.
- C3National University of Singapore; Nanjing University of Aeronautics & Astronautics; Nanjing University of Aeronautics & Astronautics; National University of Singapore; National University of Singapore; National University of Singapore; Queensland University of Technology (QUT); Agency for Science Technology & Research (A*STAR); A*STAR - Institute of Sustainability for Chemicals, Energy & Environment (ISCE2); National University of Singapore; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Beihang University; Peking University
- RPZhang, C (corresponding author), Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore; Zhang, C (corresponding author), Natl Univ Singapore, Chongqing Res Inst, Chongqing 401123, Peoples R China; Zhang, C (corresponding author), Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore; Zhang, C (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117551, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Li, J (corresponding author), Beihang Univ, Sch Chem, Key Lab Bioinspired Smart Interfacial Sci & Techn, Minist Educ, Beijing 100191, Peoples R China; Zhao, XX (corresponding author), Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China
- FXJ.L. acknowledges the support from MOE grants (MOE T2EP50121-0008, MOE-T2EP10221-0005, and MOE-T2EP10123-0004) and the Agency for Science, Technology and Research (A*STAR) under MTC Individual Research Grants (Project ID: M21K2c0113). C.Z. thanks the support from the NUS academic research grant (R-144-000-410-114). X.Z. and S.J.P. acknowledge support from the MOE grant (MOE2017-T2-2-139). D.Q. acknowledges the support of the Australian Research Council (Grant no. FT160100207). J.L. thanks the support from the National Natural Science Foundation of China (22272004) and the Fundamental Research Funds for the Central Universities (YWF-22-L-1256). X.Z. acknowledges the support from the Fundamental Research Funds for the Central Universities and the Beijing Natural Science Foundation (Grant no. Z220020). J.S. acknowledges the support from the Agency for Science, Technology and Research (A*STAR) Advanced Manufacturing & Engineering (AME) Young Individual Research Grant (YIRG) A2084c0171. Computations were done with the NUS High Performance Computing (HPC) facilities and the National Supercomputing Centre (NSCC) in Singapore. Part of this research was undertaken on the soft X-ray spectroscopy beamline at the Australian Synchrotron, part of ANSTO.
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Lyu, Pin; Wang, Ziying; Guo, Na; Su, Jie; Li, Jing; Qi, Dongchen; Xi, Shibo; Lin, Huihui; Zhang, Qihan; Pennycook, Stephen J; Chen, Jingsheng; Zhao, Xiaoxu; Zhang, Chun; Loh, Kian Ping; Lu, Jiong Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2024, DOI: 10.1021/jacs.4c02160. Abstract | BibTeX | Endnote @article{ISI:001272808300001,
title = {Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer},
author = {Pin Lyu and Ziying Wang and Na Guo and Jie Su and Jing Li and Dongchen Qi and Shibo Xi and Huihui Lin and Qihan Zhang and Stephen J Pennycook and Jingsheng Chen and Xiaoxu Zhao and Chun Zhang and Kian Ping Loh and Jiong Lu},
doi = {10.1021/jacs.4c02160},
times_cited = {0},
issn = {0002-7863},
year = {2024},
date = {2024-07-18},
journal = {JOURNAL OF THE AMERICAN CHEMICAL SOCIETY},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.},
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The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications. - FNClarivate Analytics Web of Science
- VR1.0
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- AULyu, P
Wang, ZY
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Zhang, QH
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Chen, JS
Zhao, XX
Zhang, C
Loh, KP
Lu, J
- AFPin Lyu
Ziying Wang
Na Guo
Jie Su
Jing Li
Dongchen Qi
Shibo Xi
Huihui Lin
Qihan Zhang
Stephen J Pennycook
Jingsheng Chen
Xiaoxu Zhao
Chun Zhang
Kian Ping Loh
Jiong Lu
- TIAir-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer
- SOJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
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- IDMAGNETIC-PROPERTIES; 2-DIMENSIONAL POLYMER; CONDUCTION MECHANISM; RAMAN-SPECTROSCOPY; GRAPHENE; DEFECTS; FILMS
- ABThe pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.
- C1[Lyu, Pin; Wang, Ziying; Su, Jie; Lin, Huihui; Zhang, Chun; Loh, Kian Ping; Lu, Jiong] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore.
[Lyu, Pin] Nanjing Univ Aeronaut & Astronaut, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Peoples R China.
[Lyu, Pin] Nanjing Univ Aeronaut & Astronaut, Inst Frontier Sci, Nanjing 210016, Peoples R China.
[Pennycook, Stephen J.; Lu, Jiong] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Guo, Na; Zhang, Chun] Natl Univ Singapore, Chongqing Res Inst, Chongqing 401123, Peoples R China.
[Guo, Na; Zhang, Chun] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore.
[Guo, Na; Zhang, Chun] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117551, Singapore.
[Zhang, Qihan; Pennycook, Stephen J.; Chen, Jingsheng] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore.
[Zhao, Xiaoxu] Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China.
[Xi, Shibo] Inst Chem & Engn Sci, Singapore 627833, Singapore.
[Qi, Dongchen] Queensland Univ Technol, Ctr Mat Sci, Sch Chem & Phys, Brisbane, Qld 4001, Australia.
[Li, Jing] Beihang Univ, Sch Chem, Key Lab Bioinspired Smart Interfacial Sci & Techno, Minist Educ, Beijing 100191, Peoples R China - C3National University of Singapore; Nanjing University of Aeronautics & Astronautics; Nanjing University of Aeronautics & Astronautics; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; National University of Singapore; National University of Singapore; National University of Singapore; Peking University; Agency for Science Technology & Research (A*STAR); A*STAR - Institute of Sustainability for Chemicals, Energy & Environment (ISCE2); Queensland University of Technology (QUT); Beihang University
- RPZhang, C (corresponding author), Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Zhang, C (corresponding author), Natl Univ Singapore, Chongqing Res Inst, Chongqing 401123, Peoples R China; Zhang, C (corresponding author), Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore; Zhang, C (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117551, Singapore; Zhao, XX (corresponding author), Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China; Li, J (corresponding author), Beihang Univ, Sch Chem, Key Lab Bioinspired Smart Interfacial Sci & Techno, Minist Educ, Beijing 100191, Peoples R China
- FUMOE [MOE T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004, MOE2017-T2-2-139]; Agency for Science, Technology and Research (A*STAR) under MTC Individual Research Grants [M21K2c0113]; NUS academic research grant [R-144-000-410-114]; Australian Research Council [FT160100207]; National Natural Science Foundation of China [22272004]; Fundamental Research Funds for the Central Universities [YWF-22-L-1256]; Beijing Natural Science Foundation [Z220020]; Agency for Science, Technology and Research (A*STAR) Advanced Manufacturing & Engineering (AME) Young Individual Research Grant (YIRG) [A2084c0171]
- FXJ.L. acknowledges the support from MOE grants (MOE T2EP50121-0008, MOE-T2EP10221-0005, and MOE-T2EP10123-0004) and the Agency for Science, Technology and Research (A*STAR) under MTC Individual Research Grants (Project ID: M21K2c0113). C.Z. thanks the support from the NUS academic research grant (R-144-000-410-114). X.Z. and S.J.P. acknowledge support from the MOE grant (MOE2017-T2-2-139). D.Q. acknowledges the support of the Australian Research Council (Grant no. FT160100207). J.L. thanks the support from the National Natural Science Foundation of China (22272004) and the Fundamental Research Funds for the Central Universities (YWF-22-L-1256). X.Z. acknowledges the support from the Fundamental Research Funds for the Central Universities and the Beijing Natural Science Foundation (Grant no. Z220020). J.S. acknowledges the support from the Agency for Science, Technology and Research (A*STAR) Advanced Manufacturing & Engineering (AME) Young Individual Research Grant (YIRG) A2084c0171. Computations were done with the NUS High Performance Computing (HPC) facilities and the National Supercomputing Centre (NSCC) in Singapore. Part of this research was undertaken on the soft X-ray spectroscopy beamline at the Australian Synchrotron, part of ANSTO.
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Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Chen, Zhaolong; Kashchenko, Mikhail; Lin, Li; Olsen, Thomas; Li, Jing; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, Castro A H; Novoselov, Kostya S; Lu, Jiong Evidence for electron-hole crystals in a Mott insulator NATURE MATERIALS, 2024, DOI: 10.1038/s41563-024-01910-3. Abstract | BibTeX | Endnote @article{ISI:001237790900002,
title = {Evidence for electron-hole crystals in a Mott insulator},
author = {Zhizhan Qiu and Yixuan Han and Keian Noori and Zhaolong Chen and Mikhail Kashchenko and Li Lin and Thomas Olsen and Jing Li and Hanyan Fang and Pin Lyu and Mykola Telychko and Xingyu Gu and Shaffique Adam and Su Ying Quek and Aleksandr Rodin and Castro A H Neto and Kostya S Novoselov and Jiong Lu},
doi = {10.1038/s41563-024-01910-3},
times_cited = {0},
issn = {1476-1122},
year = {2024},
date = {2024-06-03},
journal = {NATURE MATERIALS},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.},
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The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials. - FNClarivate Analytics Web of Science
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- PTJ
- AUQiu, ZZ
Han, YX
Noori, K
Chen, ZL
Kashchenko, M
Lin, L
Olsen, T
Li, J
Fang, HY
Lyu, P
Telychko, M
Gu, XY
Adam, S
Quek, SY
Rodin, A
Neto, AHC
Novoselov, KS
Lu, J
- AFZhizhan Qiu
Yixuan Han
Keian Noori
Zhaolong Chen
Mikhail Kashchenko
Li Lin
Thomas Olsen
Jing Li
Hanyan Fang
Pin Lyu
Mykola Telychko
Xingyu Gu
Shaffique Adam
Su Ying Quek
Aleksandr Rodin
Castro A H Neto
Kostya S Novoselov
Jiong Lu
- TIEvidence for electron-hole crystals in a Mott insulator
- SONATURE MATERIALS
- LAEnglish
- DTArticle
- IDWIGNER CRYSTAL
- ABThe coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.
- C1[Qiu, Zhizhan; Noori, Keian; Chen, Zhaolong; Lin, Li; Neto, A. H. Castro; Novoselov, Kostya S.; Lu, Jiong] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore.
[Han, Yixuan; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Lu, Jiong] Natl Univ Singapore, Dept Chem, Singapore, Singapore.
[Noori, Keian; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, A. H. Castro; Lu, Jiong] Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore, Singapore.
[Chen, Zhaolong] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen, Peoples R China.
[Kashchenko, Mikhail] Brain & Consciousness Res Ctr, Programmable Funct Mat Lab, Moscow, Russia.
[Kashchenko, Mikhail] Moscow Inst Phys & Technol, Ctr Photon & Mat 2D, Dolgoprudnyi 141700, Russia.
[Lin, Li] Peking Univ, Sch Mat Sci & Engn, Beijing, Peoples R China.
[Olsen, Thomas] Tech Univ Denmark, Dept Phys, CAMD, Lyngby, Denmark.
[Li, Jing] Beihang Univ, Sch Chem, Beijing, Peoples R China.
[Gu, Xingyu; Adam, Shaffique; Quek, Su Ying] Natl Univ Singapore, Dept Phys, Singapore, Singapore.
[Adam, Shaffique; Rodin, Aleksandr] Yale NUS Coll, Singapore, Singapore.
[Adam, Shaffique; Quek, Su Ying; Neto, A. H. Castro; Novoselov, Kostya S.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore.
[Quek, Su Ying] Natl Univ Singapore, NUS Grad Sch, Integrat Sci & Engn Programme, Singapore, Singapore - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; Peking University; Moscow Institute of Physics & Technology; Peking University; Technical University of Denmark; Beihang University; National University of Singapore; Yale NUS College; National University of Singapore; National University of Singapore
- RPNovoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Dept Chem, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore, Singapore; Novoselov, KS (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore
- FUMinistry of Education - Singapore (MOE) [MOE-T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004]; Ministry of Education [M21K2c0113]; Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant [EDUNC-33-18-279-V12]; Ministry of Education, Singapore (Research Centre of Excellence award) [RSRPR190000]; Royal Society, UK [21-79-20225]; Russian Science Foundation
- FXJ. Lu acknowledges support from Ministry of Education grants (MOE-T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004) and Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant (M21K2c0113). K.S.N. acknowledges support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM) project no. EDUNC-33-18-279-V12), and the Royal Society, UK (grant no. RSRPR190000). M.K. acknowledges support from the Russian Science Foundation (grant no. 21-79-20225) and Vladimir Potanin (through Brain and Consciousness Research Center).
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Li, Zejun; Lyu, Pin; Chen, Zhaolong; Guan, Dandan; Yu, Shuang; Zhao, Jinpei; Huang, Pengru; Zhou, Xin; Qiu, Zhizhan; Fang, Hanyan; Hashimoto, Makoto; Lu, Donghui; Song, Fei; Loh, Kian Ping; Zheng, Yi; Shen, Zhi-Xun; Novoselov, Kostya S; Lu, Jiong Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS2 Superlattices ADVANCED MATERIALS, 2024, DOI: 10.1002/adma.202312341. Abstract | BibTeX | Endnote @article{ISI:001199944200001,
title = {Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS_{2} Superlattices},
author = {Zejun Li and Pin Lyu and Zhaolong Chen and Dandan Guan and Shuang Yu and Jinpei Zhao and Pengru Huang and Xin Zhou and Zhizhan Qiu and Hanyan Fang and Makoto Hashimoto and Donghui Lu and Fei Song and Kian Ping Loh and Yi Zheng and Zhi-Xun Shen and Kostya S Novoselov and Jiong Lu},
doi = {10.1002/adma.202312341},
times_cited = {0},
issn = {0935-9648},
year = {2024},
date = {2024-04-11},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)(1.15)TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 x 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)(1.15)TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent T-c of approximate to 3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.},
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Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)(1.15)TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 x 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)(1.15)TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent T-c of approximate to 3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AULi, ZJ
Lyu, P
Chen, ZL
Guan, DD
Yu, S
Zhao, JP
Huang, PR
Zhou, X
Qiu, ZZ
Fang, HY
Hashimoto, M
Lu, DH
Song, F
Loh, KP
Zheng, Y
Shen, ZX
Novoselov, KS
Lu, J
- AFZejun Li
Pin Lyu
Zhaolong Chen
Dandan Guan
Shuang Yu
Jinpei Zhao
Pengru Huang
Xin Zhou
Zhizhan Qiu
Hanyan Fang
Makoto Hashimoto
Donghui Lu
Fei Song
Kian Ping Loh
Yi Zheng
Zhi-Xun Shen
Kostya S Novoselov
Jiong Lu
- TIBeyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS2 Superlattices
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DE2D Superconductivity; 2D Van Der Waals Superlattices; Charge Density Wave; Electronic Rearrangement; Monolayer-like Electronic Characteristics
- IDISING SUPERCONDUCTIVITY; METAL; SPIN
- ABNoncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)(1.15)TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 x 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)(1.15)TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent T-c of approximate to 3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.
- C1[Li, Zejun] Southeast Univ, Sch Phys, Key Lab Quantum Mat & Devices, Minist Educ, Nanjing 211189, Peoples R China.
[Li, Zejun; Lyu, Pin; Zhou, Xin; Fang, Hanyan; Loh, Kian Ping; Lu, Jiong] Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore.
[Li, Zejun] Purple Mt Labs, Nanjing 211111, Peoples R China.
[Chen, Zhaolong; Zhao, Jinpei; Huang, Pengru; Qiu, Zhizhan; Novoselov, Kostya S.; Lu, Jiong] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Chen, Zhaolong] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China.
[Guan, Dandan] Shanghai Jiao Tong Univ, Sch Phys & Astron, Key Lab Artificial Struct & Quantum Control, Minist Educ,TD Lee Inst, Shanghai 200240, Peoples R China.
[Yu, Shuang; Zheng, Yi] Zhejiang Univ, Sch Phys, Zhejiang Prov Key Lab Quantum Technol & Device, Hangzhou 310027, Peoples R China.
[Yu, Shuang; Zheng, Yi] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China.
[Huang, Pengru] Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China.
[Hashimoto, Makoto; Lu, Donghui; Shen, Zhi-Xun] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA.
[Song, Fei] Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facial, Shanghai 201204, Peoples R China.
[Shen, Zhi-Xun] Stanford Univ, Dept Phys & Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA - C3Southeast University - China; National University of Singapore; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Peking University; Shanghai Jiao Tong University; Zhejiang University; Zhejiang University; Guilin University of Electronic Technology; Stanford University; United States Department of Energy (DOE); SLAC National Accelerator Laboratory; Chinese Academy of Sciences; Shanghai Advanced Research Institute, CAS; Stanford University
- RPLu, J (corresponding author), Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore; Huang, PR (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Zheng, Y (corresponding author), Zhejiang Univ, Sch Phys, Zhejiang Prov Key Lab Quantum Technol & Device, Hangzhou 310027, Peoples R China; Zheng, Y (corresponding author), Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China; Huang, PR (corresponding author), Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
- FUResearch Fund of Southeast University [MOE T2EP50121-0008, MOE-T2EP10221-0005]; MOE Tier 2 grants [EDUNC-33-18-279-V12]; Ministry of Education, Singapore, under the Research Centre of Excellence award from the Institute for Functional Intelligent Materials [22375041]; National Nature Science Foundation of China [RF1028623202]; Start-up Research Fund of Southeast University [2021YFB3802400]; Open Research Fund of the Key Laboratory of Quantum Materials and Devices (Southeast University), Ministry of Education [52161037]; National Key Research and Development Program; National Natural Science Foundation of China; US DOE Office of Basic Energy Sciences, Division of Materials Science and Engineering
- FXZ.L., P.L., Z.C., D.G., S.Y., J.Z. contributed equally to this work. J.L. acknowledges the support from MOE Tier 2 grants (MOE T2EP50121-0008 and MOE-T2EP10221-0005). This work was supported by the Ministry of Education, Singapore, under the Research Centre of Excellence award from the Institute for Functional Intelligent Materials (I-FIM, project No. EDUNC-33-18-279-V12). Z.L. acknowledges support from the National Nature Science Foundation of China (Grant No. 22375041), the Start-up Research Fund of Southeast University (Grant No. RF1028623202), and the Open Research Fund of the Key Laboratory of Quantum Materials and Devices (Southeast University), Ministry of Education. P.R.H. acknowledges the support from the National Key Research and Development Program (No. 2021YFB3802400) and the National Natural Science Foundation of China (No. 52161037). The ARPES work was supported by the US DOE Office of Basic Energy Sciences, Division of Materials Science and Engineering.
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