2024
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Yi, Kongyang; Wu, Yao; An, Liheng; Deng, Ya; Duan, Ruihuan; Yang, Jiefu; Zhu, Chao; Gao, Weibo; Liu, Zheng Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials ADVANCED MATERIALS, 2024, DOI: 10.1002/adma.202403494. Abstract | BibTeX | Endnote @article{ISI:001251534500001,
title = {Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials},
author = {Kongyang Yi and Yao Wu and Liheng An and Ya Deng and Ruihuan Duan and Jiefu Yang and Chao Zhu and Weibo Gao and Zheng Liu},
doi = {10.1002/adma.202403494},
times_cited = {0},
issn = {0935-9648},
year = {2024},
date = {2024-06-22},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-kappa properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches.},
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pubstate = {published},
tppubtype = {article}
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The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-kappa properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUYi, KY
Wu, Y
An, LH
Deng, Y
Duan, RH
Yang, JF
Zhu, C
Gao, WB
Liu, Z
- AFKongyang Yi
Yao Wu
Liheng An
Ya Deng
Ruihuan Duan
Jiefu Yang
Chao Zhu
Weibo Gao
Zheng Liu
- TIVan der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DE2D Materials; Ambient Stability; Encapsulation; Field-effect Transistors; Liquid Metal
- IDEXFOLIATED BLACK PHOSPHORUS; EFFECTIVE PASSIVATION; DEGRADATION; SCALE; FILMS
- ABThe ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-kappa properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches.
- C1[Yi, Kongyang; Wu, Yao; Deng, Ya; Duan, Ruihuan; Yang, Jiefu; Zhu, Chao; Liu, Zheng] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore.
[An, Liheng; Gao, Weibo] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore - C3Nanyang Technological University; Nanyang Technological University
- RPLiu, Z (corresponding author), Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
- FUNational Research Foundation, Singapore, under its Competitive Research Programme (CRP) [NRF-CRP22-2019-0007, NRF-CRP22-2019-0004, NRF2020-NRF-ISF004-3520]; Ministry of Education, Singapore, under its Research Centre of Excellence [EDUNC-33-18-279-V12]; A*STAR under its AME IRG Grant [A2083c0052]; MTC Programmatic Grant [M23M2b0056]
- FXZ.L. acknowledges the support from National Research Foundation, Singapore, under its Competitive Research Programme (CRP) (NRF-CRP22-2019-0007 and NRF-CRP22-2019-0004), under its NRF-ISF joint research program (NRF2020-NRF-ISF004-3520). This research is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (Project No. EDUNC-33-18-279-V12). This research is also supported by A*STAR under its AME IRG Grant (Project No. A2083c0052) and MTC Programmatic Grant (M23M2b0056).
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Guo, Shasha; Ma, Mingyu; Wang, Yuqing; Wang, Jinbo; Jiang, Yubin; Duan, Ruihuan; Lei, Zhendong; Wang, Shuangyin; He, Yongmin; Liu, Zheng Spatially Confined Microcells: A Path toward TMD Catalyst Design CHEMICAL REVIEWS, 124 (11), pp. 6952-7006, 2024, DOI: 10.1021/acs.chemrev.3c00711. Abstract | BibTeX | Endnote @article{ISI:001226137500001,
title = {Spatially Confined Microcells: A Path toward TMD Catalyst Design},
author = {Shasha Guo and Mingyu Ma and Yuqing Wang and Jinbo Wang and Yubin Jiang and Ruihuan Duan and Zhendong Lei and Shuangyin Wang and Yongmin He and Zheng Liu},
doi = {10.1021/acs.chemrev.3c00711},
times_cited = {0},
issn = {0009-2665},
year = {2024},
date = {2024-05-15},
journal = {CHEMICAL REVIEWS},
volume = {124},
number = {11},
pages = {6952-7006},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {With the ability to maximize the exposure of nearly all active sites to reactions, two-dimensional transition metal dichalcogenide (TMD) has become a fascinating new class of materials for electrocatalysis. Recently, electrochemical microcells have been developed, and their unique spatial-confined capability enables understanding of catalytic behaviors at a single material level, significantly promoting this field. This Review provides an overview of the recent progress in microcell-based TMD electrocatalyst studies. We first introduced the structural characteristics of TMD materials and discussed their site engineering strategies for electrocatalysis. Later, we comprehensively described two distinct types of microcells: the window-confined on-chip electrochemical microcell (OCEM) and the droplet-confined scanning electrochemical cell microscopy (SECCM). Their setups, working principles, and instrumentation were elucidated in detail, respectively. Furthermore, we summarized recent advances of OCEM and SECCM obtained in TMD catalysts, such as active site identification and imaging, site monitoring, modulation of charge injection and transport, and electrostatic field gating. Finally, we discussed the current challenges and provided personal perspectives on electrochemical microcell research.},
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With the ability to maximize the exposure of nearly all active sites to reactions, two-dimensional transition metal dichalcogenide (TMD) has become a fascinating new class of materials for electrocatalysis. Recently, electrochemical microcells have been developed, and their unique spatial-confined capability enables understanding of catalytic behaviors at a single material level, significantly promoting this field. This Review provides an overview of the recent progress in microcell-based TMD electrocatalyst studies. We first introduced the structural characteristics of TMD materials and discussed their site engineering strategies for electrocatalysis. Later, we comprehensively described two distinct types of microcells: the window-confined on-chip electrochemical microcell (OCEM) and the droplet-confined scanning electrochemical cell microscopy (SECCM). Their setups, working principles, and instrumentation were elucidated in detail, respectively. Furthermore, we summarized recent advances of OCEM and SECCM obtained in TMD catalysts, such as active site identification and imaging, site monitoring, modulation of charge injection and transport, and electrostatic field gating. Finally, we discussed the current challenges and provided personal perspectives on electrochemical microcell research. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUGuo, SS
Ma, MY
Wang, YQ
Wang, JB
Jiang, YB
Duan, RH
Lei, ZD
Wang, SY
He, YM
Liu, Z
- AFShasha Guo
Mingyu Ma
Yuqing Wang
Jinbo Wang
Yubin Jiang
Ruihuan Duan
Zhendong Lei
Shuangyin Wang
Yongmin He
Zheng Liu
- TISpatially Confined Microcells: A Path toward TMD Catalyst Design
- SOCHEMICAL REVIEWS
- LAEnglish
- DTArticle
- IDTRANSITION-METAL DICHALCOGENIDE; ELECTROCHEMICAL-CELL MICROSCOPY; HYDROGEN EVOLUTION REACTION; CHIP ELECTROCATALYTIC MICRODEVICE; INDUCED PHASE-TRANSITION; WAFER-SCALE; GRAIN-BOUNDARIES; MOS2 NANOSHEETS; ACTIVE-SITES; BASAL PLANES
- ABWith the ability to maximize the exposure of nearly all active sites to reactions, two-dimensional transition metal dichalcogenide (TMD) has become a fascinating new class of materials for electrocatalysis. Recently, electrochemical microcells have been developed, and their unique spatial-confined capability enables understanding of catalytic behaviors at a single material level, significantly promoting this field. This Review provides an overview of the recent progress in microcell-based TMD electrocatalyst studies. We first introduced the structural characteristics of TMD materials and discussed their site engineering strategies for electrocatalysis. Later, we comprehensively described two distinct types of microcells: the window-confined on-chip electrochemical microcell (OCEM) and the droplet-confined scanning electrochemical cell microscopy (SECCM). Their setups, working principles, and instrumentation were elucidated in detail, respectively. Furthermore, we summarized recent advances of OCEM and SECCM obtained in TMD catalysts, such as active site identification and imaging, site monitoring, modulation of charge injection and transport, and electrostatic field gating. Finally, we discussed the current challenges and provided personal perspectives on electrochemical microcell research.
- C1[Guo, Shasha; Ma, Mingyu; Wang, Yuqing; Duan, Ruihuan; Lei, Zhendong; Liu, Zheng] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore.
[Guo, Shasha] Cornell Univ, Dept Chem & Chem Biol, Ithaca, NY 14853 USA. [Ma, Mingyu] Nanyang Technol Univ, Sch Chem Chem Engn & Biotechnol, Singapore 637616, Singapore. [Wang, Jinbo; Jiang, Yubin; Wang, Shuangyin; He, Yongmin] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemobiosensing & Chemometr, Changsha 410082, Peoples R China. [Duan, Ruihuan; Liu, Zheng] CINTRA CNRS NTU THALES, UMI 3288, Singapore 639798, Singapore. [Liu, Zheng] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore - C3Nanyang Technological University; Cornell University; Nanyang Technological University; Hunan University; Nanyang Technological University; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore
- RPLiu, Z (corresponding author), Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore; He, YM (corresponding author), Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemobiosensing & Chemometr, Changsha 410082, Peoples R China; Liu, Z (corresponding author), CINTRA CNRS NTU THALES, UMI 3288, Singapore 639798, Singapore; Liu, Z (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore
- FUMinistry of Education - Singapore [AcRF MOE2019-T2-2-105, AcRF Tier 1 RG7/21]; Singapore Ministry of Education [2021YFA1500900]; National Key R&D Program of China [531119200209]; Fundamental Research Funds for Central Universities [52203354, 22272048]; National Natural Science Foundation of China
- FXZ.L. acknowledges funding from the Singapore Ministry of Education (AcRF MOE2019-T2-2-105 and AcRF Tier 1 RG7/21). Y.H. acknowledges the National Key R&D Program of China (2021YFA1500900), the Fundamental Research Funds for Central Universities (531119200209), and the National Natural Science Foundation of China (52203354 and 22272048).
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- U121
- U221
- PUAMER CHEMICAL SOC
- PIWASHINGTON
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
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- DI10.1021/acs.chemrev.3c00711
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Grebenchuk, Sergey; Mckeever, Conor; Grzeszczyk, Magdalena; Chen, Zhaolong; Siskins, Makars; McCray, Arthur R C; Li, Yue; Petford-Long, Amanda K; Phatak, Charudatta M; Ruihuan, Duan; Zheng, Liu; Novoselov, Kostya S; Santos, Elton J G; Koperski, Maciej Topological Spin Textures in an Insulating van der Waals Ferromagnet ADVANCED MATERIALS, 2024, DOI: 10.1002/adma.202311949. Abstract | BibTeX | Endnote @article{ISI:001177264100001,
title = {Topological Spin Textures in an Insulating van der Waals Ferromagnet},
author = {Sergey Grebenchuk and Conor Mckeever and Magdalena Grzeszczyk and Zhaolong Chen and Makars Siskins and Arthur R C McCray and Yue Li and Amanda K Petford-Long and Charudatta M Phatak and Duan Ruihuan and Liu Zheng and Kostya S Novoselov and Elton J G Santos and Maciej Koperski},
doi = {10.1002/adma.202311949},
times_cited = {1},
issn = {0935-9648},
year = {2024},
date = {2024-03-04},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Generation and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Neel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level.},
keywords = {},
pubstate = {published},
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Generation and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Neel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUGrebenchuk, S
Mckeever, C
Grzeszczyk, M
Chen, ZL
Siskins, M
McCray, ARC
Li, Y
Petford-Long, AK
Phatak, CM
Ruihuan, D
Zheng, L
Novoselov, KS
Santos, EJG
Koperski, M
- AFSergey Grebenchuk
Conor Mckeever
Magdalena Grzeszczyk
Zhaolong Chen
Makars Siskins
Arthur R C McCray
Yue Li
Amanda K Petford-Long
Charudatta M Phatak
Duan Ruihuan
Liu Zheng
Kostya S Novoselov
Elton J G Santos
Maciej Koperski
- TITopological Spin Textures in an Insulating van der Waals Ferromagnet
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DEFerromagnets; Magnetic Force Microscopy; Photoluminescence; Skyrmions; Topological Spin Textures
- IDNEEL-TYPE SKYRMION; MAGNETIC SKYRMIONS; LATTICE; DYNAMICS
- ABGeneration and control of topological spin textures constitutes one of the most exciting challenges of modern spintronics given their potential applications in information storage technologies. Of particular interest are magnetic insulators, which due to low damping, absence of Joule heating and reduced dissipation can provide energy-efficient spin-textures platform. Here, it is demonstrated that the interplay between sample thickness, external magnetic fields, and optical excitations can generate a prolific paramount of spin textures, and their coexistence in insulating CrBr3 van der Waals (vdW) ferromagnets. Using high-resolution magnetic force microscopy and large-scale micromagnetic simulation methods, the existence of a large region in T-B phase diagram is demonstrated where different stripe domains, skyrmion crystals, and magnetic domains exist and can be intrinsically selected or transformed to each-other via a phase-switch mechanism. Lorentz transmission electron microscopy unveils the mixed chirality of the magnetic textures that are of Bloch-type at given conditions but can be further manipulated into Neel-type or hybrid-type via thickness-engineering. The topological phase transformation between the different magnetic objects can be further inspected by standard photoluminescence optical probes resolved by circular polarization indicative of an existence of exciton-skyrmion coupling mechanism. The findings identify vdW magnetic insulators as a promising framework of materials for the manipulation and generation of highly ordered skyrmion lattices relevant for device integration at the atomic level.
- C1[Grebenchuk, Sergey; Grzeszczyk, Magdalena; Chen, Zhaolong; Siskins, Makars; Novoselov, Kostya S.; Koperski, Maciej] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Grebenchuk, Sergey; Novoselov, Kostya S.; Koperski, Maciej] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore. [Mckeever, Conor; Santos, Elton J. G.] Univ Edinburgh, Inst Condensed Matter Phys & Complex Syst, Sch Phys & Astron, Edinburgh EH9 3FD, Scotland. [McCray, Arthur R. C.; Li, Yue; Petford-Long, Amanda K.; Phatak, Charudatta M.] Argonne Natl Lab, Mat Sci Div, Lemont, IL 60439 USA. [McCray, Arthur R. C.] Northwestern Univ, Appl Phys Program, Evanston, IL 60208 USA. [Petford-Long, Amanda K.; Phatak, Charudatta M.] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA. [Ruihuan, Duan; Zheng, Liu] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore. [Ruihuan, Duan] Nanyang Technol Univ, CINTRA CNRS NTU THALES, UMI 3288, Res Techno Plaza, Singapore 639798, Singapore. [Santos, Elton J. G.] Univ Edinburgh, Higgs Ctr Theoret Phys, Edinburgh EH9 3FD, Scotland. [Santos, Elton J. G.] Donostia Int Phys Ctr DIPC, Donostia San Sebastian 20018, Basque Country, Spain - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; University of Edinburgh; United States Department of Energy (DOE); Argonne National Laboratory; Northwestern University; Northwestern University; Nanyang Technological University; Nanyang Technological University; University of Edinburgh
- RPGrebenchuk, S (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Grebenchuk, S (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore; Santos, EJG (corresponding author), Univ Edinburgh, Inst Condensed Matter Phys & Complex Syst, Sch Phys & Astron, Edinburgh EH9 3FD, Scotland; Santos, EJG (corresponding author), Univ Edinburgh, Higgs Ctr Theoret Phys, Edinburgh EH9 3FD, Scotland; Santos, EJG (corresponding author), Donostia Int Phys Ctr DIPC, Donostia San Sebastian 20018, Basque Country, Spain
- FUMinistry of Education (Singapore) [EDUN C-33-18-279-V12]; Ministry of Education (Singapore) through the Research Centre of Excellence program [MOE-T2EP50122-0012]; Ministry of Education, Singapore [NRF-CRP22-2019-0007]; National Research Foundation, Singapore, under its Competitive Research Programme (CRP) [MOE2018-T3-1-002]; Singapore Ministry of Education Tier 3 Programme "Geometrical Quantum Materials" AcRF Tier 3 [FA8655-21-1-7026]; Air Force Office of Scientific Research [EP/P020267/1]; Office of Naval Research Global [d429]; University of Edinburgh [EP/T021578/1]; EPSRC [DE-AC02-06CH11357]; ARCHER UK National Supercomputing Service; EPSRC Open Fellowship; US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division; U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
- FXThis project was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C-33-18-279-V12, I-FIM). This research is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 (MOE-T2EP50122-0012). Z.L. acknowledges the support from National Research Foundation, Singapore, under its Competitive Research Programme (CRP) (NRF-CRP22-2019-0007), the Singapore Ministry of Education Tier 3 Programme "Geometrical Quantum Materials" AcRF Tier 3 (MOE2018-T3-1-002). This material is based upon work supported by the Air Force Office of Scientific Research and the Office of Naval Research Global under award number FA8655-21-1-7026. E.J.G.S. acknowledges computational resources through CIRRUS Tier-2 HPC Service (ec131 Cirrus Project) at EPCC () funded by the University of Edinburgh and EPSRC (EP/P020267/1); ARCHER UK National Supercomputing Service () via Project d429. E.J.G.S. acknowledges the EPSRC Open Fellowship (EP/T021578/1), and the Edinburgh-Rice Strategic Collaboration Awards for funding support. Work from A.R.C.M., Y.L. A.K.P. and C.M.P. was funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division. Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. For the purpose of open access, the authors have applied a creative commons attribution (CC BY) licence to any author accepted manuscript version arising.
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2023
|
Fu, Qundong; Cong, Xin; Xu, Xiaodong; Zhu, Song; Zhao, Xiaoxu; Liu, Sheng; Yao, Bingqing; Xu, Manzhang; Deng, Ya; Zhu, Chao; Wang, Xiaowei; Kang, Lixing; Zeng, Qingsheng; Lin, Miao-Ling; Wang, Xingli; Tang, Bijun; Yang, Jianqun; Dong, Zhili; Liu, Fucai; Xiong, Qihua; Zhou, Jiadong; Wang, Qijie; Li, Xingji; Tan, Ping-Heng; Tay, Beng Kang; Liu, Zheng Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor ADVANCED MATERIALS, 35 (46), 2023, DOI: 10.1002/adma.202306330. Abstract | BibTeX | Endnote @article{ISI:001083033400001,
title = {Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor},
author = {Qundong Fu and Xin Cong and Xiaodong Xu and Song Zhu and Xiaoxu Zhao and Sheng Liu and Bingqing Yao and Manzhang Xu and Ya Deng and Chao Zhu and Xiaowei Wang and Lixing Kang and Qingsheng Zeng and Miao-Ling Lin and Xingli Wang and Bijun Tang and Jianqun Yang and Zhili Dong and Fucai Liu and Qihua Xiong and Jiadong Zhou and Qijie Wang and Xingji Li and Ping-Heng Tan and Beng Kang Tay and Zheng Liu},
doi = {10.1002/adma.202306330},
times_cited = {1},
issn = {0935-9648},
year = {2023},
date = {2023-10-15},
journal = {ADVANCED MATERIALS},
volume = {35},
number = {46},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (chi(2)), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, chi(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at approximate to 2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large chi(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (chi(2)), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, chi(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at approximate to 2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large chi(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUFu, QD
Cong, X
Xu, XD
Zhu, S
Zhao, XX
Liu, S
Yao, BQ
Xu, MZ
Deng, Y
Zhu, C
Wang, XW
Kang, LX
Zeng, QS
Lin, ML
Wang, XL
Tang, BJ
Yang, JQ
Dong, ZL
Liu, FC
Xiong, QH
Zhou, JD
Wang, QJ
Li, XJ
Tan, PH
Tay, BK
Liu, Z
- AFQundong Fu
Xin Cong
Xiaodong Xu
Song Zhu
Xiaoxu Zhao
Sheng Liu
Bingqing Yao
Manzhang Xu
Ya Deng
Chao Zhu
Xiaowei Wang
Lixing Kang
Qingsheng Zeng
Miao-Ling Lin
Xingli Wang
Bijun Tang
Jianqun Yang
Zhili Dong
Fucai Liu
Qihua Xiong
Jiadong Zhou
Qijie Wang
Xingji Li
Ping-Heng Tan
Beng Kang Tay
Zheng Liu
- TIBerry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor
- SOADVANCED MATERIALS
- LAEnglish
- DTArticle
- DE2D Materials; Berry Curvature Dipoles; Second-harmonic Generation; Tellurium; Weyl Semiconductors
- IDHARMONIC-GENERATION; RAMAN-SCATTERING; TELLURIUM; EFFICIENCY; CO2-LASER
- ABDue to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (chi(2)), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, chi(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at approximate to 2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large chi(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.
- C1[Fu, Qundong; Yao, Bingqing; Xu, Manzhang; Deng, Ya; Zhu, Chao; Wang, Xiaowei; Kang, Lixing; Zeng, Qingsheng; Tang, Bijun; Dong, Zhili; Liu, Zheng] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore City 639798, Singapore.
[Fu, Qundong; Wang, Xiaowei; Wang, Qijie; Tay, Beng Kang; Liu, Zheng] Nanyang Technol Univ, CNRS, THALES Res Alliances, IRL 3288 CINTRA, Singapore City 637553, Singapore. [Cong, Xin; Lin, Miao-Ling; Tan, Ping-Heng] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China. [Xu, Xiaodong; Yang, Jianqun; Li, Xingji] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China. [Zhu, Song; Wang, Qijie] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore City 639798, Singapore. [Zhao, Xiaoxu] Peking Univ, Sch Mat Sci & Engn, Beijing 100871, Peoples R China. [Liu, Sheng; Wang, Qijie] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore City 637371, Singapore. [Liu, Fucai] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Peoples R China. [Xiong, Qihua] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China. [Xiong, Qihua] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China. [Xiong, Qihua] Beijing Acad Quantum Informat Sci, Beijing 100193, Peoples R China. [Zhou, Jiadong] Minist Educ, Beijing Inst Technol, Key Lab Adv Optoelect quantum architecture & measu, Beijing Key Lab Nanophoton & Ultrafine Optoelect S, Beijing 100081, Peoples R China. [Zhou, Jiadong] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China. [Liu, Zheng] Natl Univ Singapore, Inst Funct Intelligent Mat, Blk S9,Level 9,4 Sci Dr 2, Singapore City 117544, Singapore - C3Nanyang Technological University; Nanyang Technological University; Chinese Academy of Sciences; Institute of Semiconductors, CAS; Harbin Institute of Technology; Nanyang Technological University; Peking University; Nanyang Technological University; University of Electronic Science & Technology of China; Tsinghua University; Tsinghua University; Beijing Academy of Quantum Information Sciences; Beijing Institute of Technology; Beijing Institute of Technology; National University of Singapore
- RPWang, QJ (corresponding author), Nanyang Technol Univ, CNRS, THALES Res Alliances, IRL 3288 CINTRA, Singapore City 637553, Singapore; Tan, PH (corresponding author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing 100083, Peoples R China; Li, XJ (corresponding author), Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China; Wang, QJ (corresponding author), Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore City 639798, Singapore; Wang, QJ (corresponding author), Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore City 637371, Singapore; Liu, Z (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Blk S9,Level 9,4 Sci Dr 2, Singapore City 117544, Singapore
- FUQ.F. acknowledges the great help from J.Z. This work was supported by the National Key Research amp; Development Program (2021YFE0194200), Singapore NRF-CRP21-2018-0007 and NRF-CRP22-2019-0007, Singapore Ministry of Education via AcRF Tier 3 Programme "Ge [2020YFA0309200]; National Key Research amp; Development Program [MOE2018-T3-1-002]; NRF-CRP22-2019-0007, Singapore Ministry of Education via AcRF Tier 3 Programme "Geometrical Quantum Materials" [A2083c0052]; A*STAR under its AME IRG Grant [EDUNC-33-18-279-V12]; Ministry of Education, Singapore, under its Research Centre of Excellence award [12004377, 11874350, 12204472]; Institute for Functional Intelligent Materials [ZDBS-LYSLH004]; National Natural Science Foundation of China [XDB0460000]; CAS Key Research Program of Frontier Sciences [MOE2019-T2-2-075]; Strategic Priority Research Program of CAS [03INS000973C150]; Singapore MOE under a Tier 2 funding; Presidential Postdoctoral Fellowship, Nanyang Technological University, Singapore
- FXQ.F. acknowledges the great help from J.Z. This work was supported by the National Key Research & Development Program (2021YFE0194200), Singapore NRF-CRP21-2018-0007 and NRF-CRP22-2019-0007, Singapore Ministry of Education via AcRF Tier 3 Programme "Geometrical Quantum Materials" (MOE2018-T3-1-002), A*STAR under its AME IRG Grant (Award No. A2083c0052). This research/project is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials (Project No. EDUNC-33-18-279-V12). F.L. acknowledges support from the National Key Research & Development Program (2020YFA0309200). P.T. and M.L. acknowledge support from the National Natural Science Foundation of China (Grant Nos. 12004377, 11874350, and 12204472), the CAS Key Research Program of Frontier Sciences (Grant No. ZDBS-LYSLH004) and the Strategic Priority Research Program of CAS (Grant No. XDB0460000). B.T. acknowledges funding by Singapore MOE under a Tier 2 funding (MOE2019-T2-2-075). X.Z. thanks the support from the Presidential Postdoctoral Fellowship, Nanyang Technological University, Singapore via grant 03INS000973C150.
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2022
|
Meng, Peng; Wu, Yaze; Bian, Renji; Pan, Er; Dong, Biao; Zhao, Xiaoxu; Chen, Jiangang; Wu, Lishu; Sun, Yuqi; Fu, Qundong; Liu, Qing; Shi, Dong; Zhang, Qi; Zhang, Yong-Wei; Liu, Zheng; Liu, Fucai Sliding induced multiple polarization states in two-dimensional ferroelectrics 48 NATURE COMMUNICATIONS, 13 (1), 2022, DOI: 10.1038/s41467-022-35339-6. Abstract | BibTeX | Endnote @article{ISI:000969735000022,
title = {Sliding induced multiple polarization states in two-dimensional ferroelectrics},
author = {Peng Meng and Yaze Wu and Renji Bian and Er Pan and Biao Dong and Xiaoxu Zhao and Jiangang Chen and Lishu Wu and Yuqi Sun and Qundong Fu and Qing Liu and Dong Shi and Qi Zhang and Yong-Wei Zhang and Zheng Liu and Fucai Liu},
doi = {10.1038/s41467-022-35339-6},
times_cited = {48},
year = {2022},
date = {2022-12-12},
journal = {NATURE COMMUNICATIONS},
volume = {13},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices. Layer dependence is an important aspect to properties of van der Waals materials. Here, the authors obtain layer dependent multiple polarization states in 3R MoS2 and propose a generalized model to describe their ferroelectric switching processes.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
When the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices. Layer dependence is an important aspect to properties of van der Waals materials. Here, the authors obtain layer dependent multiple polarization states in 3R MoS2 and propose a generalized model to describe their ferroelectric switching processes. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUMeng, P
Wu, YZ
Bian, RJ
Pan, E
Dong, B
Zhao, XX
Chen, JG
Wu, LS
Sun, YQ
Fu, QD
Liu, Q
Shi, D
Zhang, Q
Zhang, YW
Liu, Z
Liu, FC
- AFPeng Meng
Yaze Wu
Renji Bian
Er Pan
Biao Dong
Xiaoxu Zhao
Jiangang Chen
Lishu Wu
Yuqi Sun
Qundong Fu
Qing Liu
Dong Shi
Qi Zhang
Yong-Wei Zhang
Zheng Liu
Fucai Liu
- TISliding induced multiple polarization states in two-dimensional ferroelectrics
- SONATURE COMMUNICATIONS
- LAEnglish
- DTArticle
- IDTOTAL-ENERGY CALCULATIONS
- ABWhen the atomic layers in a non-centrosymmetric van der Waals structure slide against each other, the interfacial charge transfer results in a reversal of the structure's spontaneous polarization. This phenomenon is known as sliding ferroelectricity and it is markedly different from conventional ferroelectric switching mechanisms relying on ion displacement. Here, we present layer dependence as a new dimension to control sliding ferroelectricity. By fabricating 3R MoS2 of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3R MoS2. Using results from ab initio density functional theory calculations, we propose a generalized model to describe the ferroelectric switching process in multilayer 3R MoS2 and to explain the formation of these intermediate polarization states. This work reveals the critical roles layer number and interlayer dipole coupling play in sliding ferroelectricity and presents a new strategy for the design of novel sliding ferroelectric devices. Layer dependence is an important aspect to properties of van der Waals materials. Here, the authors obtain layer dependent multiple polarization states in 3R MoS2 and propose a generalized model to describe their ferroelectric switching processes.
- C1[Meng, Peng; Bian, Renji; Pan, Er; Chen, Jiangang; Sun, Yuqi; Liu, Qing; Shi, Dong; Liu, Fucai] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu, Peoples R China.
[Meng, Peng; Liu, Fucai] Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou, Peoples R China. [Wu, Yaze; Zhang, Yong-Wei] ASTAR, Inst High Performance Comp, Singapore, Singapore. [Dong, Biao; Zhang, Qi] Nanjing Univ, Sch Phys, Nanjing, Peoples R China. [Zhao, Xiaoxu] Peking Univ, Sch Mat Sci & Engn, Beijing, Peoples R China. [Wu, Lishu; Fu, Qundong; Liu, Zheng] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore. [Liu, Zheng] CINTRA CNRS NTU THALES, UMI 3288, Res Techno Plaza, Singapore, Singapore. [Liu, Zheng] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore - C3University of Electronic Science & Technology of China; University of Electronic Science & Technology of China; Agency for Science Technology & Research (A*STAR); A*STAR - Institute of High Performance Computing (IHPC); Nanjing University; Peking University; Nanyang Technological University; Nanyang Technological University; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM)
- RPLiu, FC (corresponding author), Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu, Peoples R China; Liu, FC (corresponding author), Univ Elect Sci & Technol China, Yangtze Delta Reg Inst Huzhou, Huzhou, Peoples R China; Zhang, YW (corresponding author), ASTAR, Inst High Performance Comp, Singapore, Singapore; Liu, Z (corresponding author), Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore; Liu, Z (corresponding author), CINTRA CNRS NTU THALES, UMI 3288, Res Techno Plaza, Singapore, Singapore; Liu, Z (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore
- FUNational Natural Science Foundation of China [12161141015, 62074025]; National Key Research & Development Program [2021YFE0194200, 2020YFA0309200]; Applied Basic Research Program of Sichuan Province [2021JDGD0026]; Postdoctoral Innovative Talent Supporting Program [BX20190060]; Sichuan Province Key Laboratory of Display Science and Technology [NRF-CRP24-2020-0002]; National Research Foundation, Singapore [NRF-CRP22-2019-0007, NRF-CRP22-2019-0004]; Singapore A*STAR SERC CRFAward [A2083c0052]; National Research Foundation, Singapore, under its Competitive Research Program(CRP) [EDUNC-33-18-279-V12]; A*STAR under its AME IRG Grant; Ministry of Education, Singapore
- FXThis work was supported by the National Natural Science Foundation of China (12161141015, 62074025) and the National Key Research & Development Program (2021YFE0194200, 2020YFA0309200), the Applied Basic Research Program of Sichuan Province (2021JDGD0026), the Postdoctoral Innovative Talent Supporting Program (BX20190060) and Sichuan Province Key Laboratory of Display Science and Technology. This work was also partially supported by the National Research Foundation, Singapore under Award No. NRF-CRP24-2020-0002, and Singapore A*STAR SERC CRFAward. The use of computing resources at the National Supercomputing Centre Singapore is gratefully acknowledged. Z.L. acknowledges the support from National Research Foundation, Singapore, under its Competitive Research Program(CRP) (NRF-CRP22-2019-0007, NRF-CRP22-2019-0004). This research is also supported by A*STAR under its AME IRG Grant (Project No. A2083c0052), and the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials. Project No. EDUNC-33-18-279-V12.
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