2025
|
Zhang, Peng; Si, Kunpeng; Wang, Xingguo; Zhao, Feifei; Li, Bixuan; Wei, Juntian; Yang, Yahan; Tang, Peizhe; Liu, Zheng; Wu, Kai; Gong, Yongji Synthesis Engineering of 2D Co3Sn2S2
with Tunable Anomalous Hall Effect ADVANCED MATERIALS, 37 (43), 2025, DOI: 10.1002/adma.202509261. Abstract | BibTeX | Endnote @article{WOS:001550978900001,
title = {Synthesis Engineering of 2D Co3Sn2S2
with Tunable Anomalous Hall Effect},
author = {Peng Zhang and Kunpeng Si and Xingguo Wang and Feifei Zhao and Bixuan Li and Juntian Wei and Yahan Yang and Peizhe Tang and Zheng Liu and Kai Wu and Yongji Gong},
doi = {10.1002/adma.202509261},
times_cited = {0},
issn = {0935-9648},
year = {2025},
date = {2025-10-01},
journal = {ADVANCED MATERIALS},
volume = {37},
number = {43},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {2D kagome ferromagnetic materials serve as an exceptionally important
platform for exploring spintronics and correlated quantum phenomena.
However, the controllable synthesis of non-layered kagome ferromagnetic
materials remains a significant challenge due to the absence of van der
Waals gap. Here, it is shown that ultrathin non-layered 2D Co3Sn2S2
single crystal with kagome lattice, which owns strong ferromagnetic
order and giant anomalous Hall effect (AHE), is obtained through flux
transformation mechanism, where ultrathin Co3Sn2S2 single crystal is
transformed from ultrathin layered intermediates of SnS2 or SnS.
Magnetotransport measurements indicate that the AHE of the ultrathin
Co3Sn2S2 single crystal is superior to those of its bulk and ultrathin
polycrystalline counterparts. Further, combining dimensionality
advantages and the introduced extrinsic contribution of Fe, where the
doping concentration can be well controlled in 2D Co3Sn2S2, a giant
anomalous Hall angle of 48% and an anomalous Hall conductivity of 2200
Omega(-1) cm(-1) are achieved. Under zero magnetic field, these two
values are, to the best of knowledge, almost the highest ever recorded
than in most known magnetic materials. The results establish 2D
non-layered ferromagnetic kagome lattice as a platform for exploration
of quantum confinement effect and other correlated phenomena.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
2D kagome ferromagnetic materials serve as an exceptionally important
platform for exploring spintronics and correlated quantum phenomena.
However, the controllable synthesis of non-layered kagome ferromagnetic
materials remains a significant challenge due to the absence of van der
Waals gap. Here, it is shown that ultrathin non-layered 2D Co3Sn2S2
single crystal with kagome lattice, which owns strong ferromagnetic
order and giant anomalous Hall effect (AHE), is obtained through flux
transformation mechanism, where ultrathin Co3Sn2S2 single crystal is
transformed from ultrathin layered intermediates of SnS2 or SnS.
Magnetotransport measurements indicate that the AHE of the ultrathin
Co3Sn2S2 single crystal is superior to those of its bulk and ultrathin
polycrystalline counterparts. Further, combining dimensionality
advantages and the introduced extrinsic contribution of Fe, where the
doping concentration can be well controlled in 2D Co3Sn2S2, a giant
anomalous Hall angle of 48% and an anomalous Hall conductivity of 2200
Omega(-1) cm(-1) are achieved. Under zero magnetic field, these two
values are, to the best of knowledge, almost the highest ever recorded
than in most known magnetic materials. The results establish 2D
non-layered ferromagnetic kagome lattice as a platform for exploration
of quantum confinement effect and other correlated phenomena. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFPeng Zhang
Kunpeng Si
Xingguo Wang
Feifei Zhao
Bixuan Li
Juntian Wei
Yahan Yang
Peizhe Tang
Zheng Liu
Kai Wu
Yongji Gong
- TISynthesis Engineering of 2D Co3Sn2S2
with Tunable Anomalous Hall Effect - SOADVANCED MATERIALS
- DTArticle
- AB2D kagome ferromagnetic materials serve as an exceptionally important
platform for exploring spintronics and correlated quantum phenomena.
However, the controllable synthesis of non-layered kagome ferromagnetic
materials remains a significant challenge due to the absence of van der
Waals gap. Here, it is shown that ultrathin non-layered 2D Co3Sn2S2
single crystal with kagome lattice, which owns strong ferromagnetic
order and giant anomalous Hall effect (AHE), is obtained through flux
transformation mechanism, where ultrathin Co3Sn2S2 single crystal is
transformed from ultrathin layered intermediates of SnS2 or SnS.
Magnetotransport measurements indicate that the AHE of the ultrathin
Co3Sn2S2 single crystal is superior to those of its bulk and ultrathin
polycrystalline counterparts. Further, combining dimensionality
advantages and the introduced extrinsic contribution of Fe, where the
doping concentration can be well controlled in 2D Co3Sn2S2, a giant
anomalous Hall angle of 48% and an anomalous Hall conductivity of 2200
Omega(-1) cm(-1) are achieved. Under zero magnetic field, these two
values are, to the best of knowledge, almost the highest ever recorded
than in most known magnetic materials. The results establish 2D
non-layered ferromagnetic kagome lattice as a platform for exploration
of quantum confinement effect and other correlated phenomena. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN0935-9648
- VL37
- DI10.1002/adma.202509261
- UTWOS:001550978900001
- ER
- EF
|
Deng, Ya; Wang, Zihao; Hu, Zhili; Li, Ang; Zhou, Xin; Chen, Zhaolong; Wang, Xingli; Liu, Jiawei; Yi, Kongyang; Yuan, Dundong; Wang, Xiaowei; Zhang, Peikun; Zhu, Chao; Zhao, Xiaoxu; Ma, Wei; Wu, Yao; Duan, Ruihuan; Fu, Qundong; Yang, Jiefu; Zhou, Xiuxian; Cao, Mengyao; Zhu, Chao; Tay, Beng Kang; Zhang, Jian; Perrin, Mickael Lucien; Zhou, Wu; Zhang, Zhuhua; Novoselov, Kostya S; Liu, Zheng Tellurium-assisted growth of large-scale atom-thin insulating amorphous
carbon on insulating substrates NATURE COMMUNICATIONS, 16 (1), 2025, DOI: 10.1038/s41467-025-63872-7. Abstract | BibTeX | Endnote @article{WOS:001587519800007,
title = {Tellurium-assisted growth of large-scale atom-thin insulating amorphous
carbon on insulating substrates},
author = {Ya Deng and Zihao Wang and Zhili Hu and Ang Li and Xin Zhou and Zhaolong Chen and Xingli Wang and Jiawei Liu and Kongyang Yi and Dundong Yuan and Xiaowei Wang and Peikun Zhang and Chao Zhu and Xiaoxu Zhao and Wei Ma and Yao Wu and Ruihuan Duan and Qundong Fu and Jiefu Yang and Xiuxian Zhou and Mengyao Cao and Chao Zhu and Beng Kang Tay and Jian Zhang and Mickael Lucien Perrin and Wu Zhou and Zhuhua Zhang and Kostya S Novoselov and Zheng Liu},
doi = {10.1038/s41467-025-63872-7},
times_cited = {0},
year = {2025},
date = {2025-10-01},
journal = {NATURE COMMUNICATIONS},
volume = {16},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Monolayer amorphous carbon (a-C), an atom-thin two-dimensional (2D)
carbon amorphous material, has attracted significant attention due to
its structural and transport properties. Here, we report a chemical
vapor deposition (CVD) approach for directly synthesizing monolayer a-C
films on insulating substrates, achieving high control over their size,
thickness, and fabrication. The synthesized films exhibit a complete
coverage over a 2-inch wafer, with high uniformity. Our theoretical
analysis reveals the critical role of tellurium in promoting the growth
of monolayer a-C on the substrate. Moreover, quantum tunneling
measurements at liquid helium temperature were conducted on the a-C
films, confirming the samples' homogeneity and their insulating
behavior. This work provides a promising strategy for direct synthesis
of atom-thin insulating amorphous materials and deepens our
understanding of quantum phenomena and electronic properties in
low-dimensional disordered materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Monolayer amorphous carbon (a-C), an atom-thin two-dimensional (2D)
carbon amorphous material, has attracted significant attention due to
its structural and transport properties. Here, we report a chemical
vapor deposition (CVD) approach for directly synthesizing monolayer a-C
films on insulating substrates, achieving high control over their size,
thickness, and fabrication. The synthesized films exhibit a complete
coverage over a 2-inch wafer, with high uniformity. Our theoretical
analysis reveals the critical role of tellurium in promoting the growth
of monolayer a-C on the substrate. Moreover, quantum tunneling
measurements at liquid helium temperature were conducted on the a-C
films, confirming the samples' homogeneity and their insulating
behavior. This work provides a promising strategy for direct synthesis
of atom-thin insulating amorphous materials and deepens our
understanding of quantum phenomena and electronic properties in
low-dimensional disordered materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFYa Deng
Zihao Wang
Zhili Hu
Ang Li
Xin Zhou
Zhaolong Chen
Xingli Wang
Jiawei Liu
Kongyang Yi
Dundong Yuan
Xiaowei Wang
Peikun Zhang
Chao Zhu
Xiaoxu Zhao
Wei Ma
Yao Wu
Ruihuan Duan
Qundong Fu
Jiefu Yang
Xiuxian Zhou
Mengyao Cao
Chao Zhu
Beng Kang Tay
Jian Zhang
Mickael Lucien Perrin
Wu Zhou
Zhuhua Zhang
Kostya S Novoselov
Zheng Liu
- TITellurium-assisted growth of large-scale atom-thin insulating amorphous
carbon on insulating substrates - SONATURE COMMUNICATIONS
- DTArticle
- ABMonolayer amorphous carbon (a-C), an atom-thin two-dimensional (2D)
carbon amorphous material, has attracted significant attention due to
its structural and transport properties. Here, we report a chemical
vapor deposition (CVD) approach for directly synthesizing monolayer a-C
films on insulating substrates, achieving high control over their size,
thickness, and fabrication. The synthesized films exhibit a complete
coverage over a 2-inch wafer, with high uniformity. Our theoretical
analysis reveals the critical role of tellurium in promoting the growth
of monolayer a-C on the substrate. Moreover, quantum tunneling
measurements at liquid helium temperature were conducted on the a-C
films, confirming the samples' homogeneity and their insulating
behavior. This work provides a promising strategy for direct synthesis
of atom-thin insulating amorphous materials and deepens our
understanding of quantum phenomena and electronic properties in
low-dimensional disordered materials. - Z90
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- VL16
- DI10.1038/s41467-025-63872-7
- UTWOS:001587519800007
- ER
- EF
|
Ma, Mingyu; Lee, Jinn-Kye; Wu, Shuyang; Yu, Zhen; Wang, Yuqing; Zhou, Xin; Liu, Yanting; Chan, Jiaxin; Shi, Jiayu; Liu, Liren; Zhang, Zhengyang; Liu, Zheng Identical-Location Single-Molecule Imaging Reveals Cocatalyst-Induced
Enhancement in Photocatalytic Activity ADVANCED FUNCTIONAL MATERIALS, 2025, DOI: 10.1002/adfm.202510387. Abstract | BibTeX | Endnote @article{WOS:001599608200001,
title = {Identical-Location Single-Molecule Imaging Reveals Cocatalyst-Induced
Enhancement in Photocatalytic Activity},
author = {Mingyu Ma and Jinn-Kye Lee and Shuyang Wu and Zhen Yu and Yuqing Wang and Xin Zhou and Yanting Liu and Jiaxin Chan and Jiayu Shi and Liren Liu and Zhengyang Zhang and Zheng Liu},
doi = {10.1002/adfm.202510387},
times_cited = {0},
issn = {1616-301X},
year = {2025},
date = {2025-10-01},
journal = {ADVANCED FUNCTIONAL MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Incorporating cocatalysts into photocatalytic systems has been widely
recognized as an effective way to accelerate catalytic reactions and
boost catalytic efficiency. However, directly visualizing the
cocatalytic effect in real-time with nanometric precision remains a
significant challenge. This study presents an advanced single-molecule
imaging technique, IL-SMLM (identical-location single-molecule
localization microscopy), to resolve and quantify the activity
enhancements induced by Pt cocatalysts on bismuth oxybromide (BiOBr)
photocatalysts with nanometric resolution. The findings demonstrate that
Pt cocatalysts significantly enhance the photoreduction ability of both
the basal plane and edges in BiOBr. Remarkably, the enhancement factor
at the edges (approximate to 4668) is 12-fold higher than that of the
basal plane. This preferential enhancement originates from structural
differences, with the presence of compressive strain at edges
facilitating more efficient charge separation and electron transfer in
BiOBr; further, the preferential charge separation of the edge will be
amplified while introducing a uniformly distributed Pt cocatalyst. The
study highlights IL-SMLM as a powerful tool for probing complex
cocatalytic phenomena at the single-molecule level and provides valuable
insights for the rational design of high-performance photocatalytic
systems.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Incorporating cocatalysts into photocatalytic systems has been widely
recognized as an effective way to accelerate catalytic reactions and
boost catalytic efficiency. However, directly visualizing the
cocatalytic effect in real-time with nanometric precision remains a
significant challenge. This study presents an advanced single-molecule
imaging technique, IL-SMLM (identical-location single-molecule
localization microscopy), to resolve and quantify the activity
enhancements induced by Pt cocatalysts on bismuth oxybromide (BiOBr)
photocatalysts with nanometric resolution. The findings demonstrate that
Pt cocatalysts significantly enhance the photoreduction ability of both
the basal plane and edges in BiOBr. Remarkably, the enhancement factor
at the edges (approximate to 4668) is 12-fold higher than that of the
basal plane. This preferential enhancement originates from structural
differences, with the presence of compressive strain at edges
facilitating more efficient charge separation and electron transfer in
BiOBr; further, the preferential charge separation of the edge will be
amplified while introducing a uniformly distributed Pt cocatalyst. The
study highlights IL-SMLM as a powerful tool for probing complex
cocatalytic phenomena at the single-molecule level and provides valuable
insights for the rational design of high-performance photocatalytic
systems. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFMingyu Ma
Jinn-Kye Lee
Shuyang Wu
Zhen Yu
Yuqing Wang
Xin Zhou
Yanting Liu
Jiaxin Chan
Jiayu Shi
Liren Liu
Zhengyang Zhang
Zheng Liu
- TIIdentical-Location Single-Molecule Imaging Reveals Cocatalyst-Induced
Enhancement in Photocatalytic Activity - SOADVANCED FUNCTIONAL MATERIALS
- DTArticle
- ABIncorporating cocatalysts into photocatalytic systems has been widely
recognized as an effective way to accelerate catalytic reactions and
boost catalytic efficiency. However, directly visualizing the
cocatalytic effect in real-time with nanometric precision remains a
significant challenge. This study presents an advanced single-molecule
imaging technique, IL-SMLM (identical-location single-molecule
localization microscopy), to resolve and quantify the activity
enhancements induced by Pt cocatalysts on bismuth oxybromide (BiOBr)
photocatalysts with nanometric resolution. The findings demonstrate that
Pt cocatalysts significantly enhance the photoreduction ability of both
the basal plane and edges in BiOBr. Remarkably, the enhancement factor
at the edges (approximate to 4668) is 12-fold higher than that of the
basal plane. This preferential enhancement originates from structural
differences, with the presence of compressive strain at edges
facilitating more efficient charge separation and electron transfer in
BiOBr; further, the preferential charge separation of the edge will be
amplified while introducing a uniformly distributed Pt cocatalyst. The
study highlights IL-SMLM as a powerful tool for probing complex
cocatalytic phenomena at the single-molecule level and provides valuable
insights for the rational design of high-performance photocatalytic
systems. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN1616-301X
- DI10.1002/adfm.202510387
- UTWOS:001599608200001
- ER
- EF
|
Zhou, Xinyi; Malik, Iftikhar Ahmed; Duan, Ruihuan; Shi, Hanqing; Liu, Chen; Luo, Yan; Sun, Yue; Chen, Ruixi; Liu, Yilin; Xia, Shian; Zhang, Vanessa Li; Liu, Sheng; Zhu, Chao; Zhang, Xixiang; Du, Yi; Liu, Zheng; Yu, Ting Strain-Induced Robust Skyrmion Lattice at Room Temperature in van der
Waals Ferromagnet ADVANCED MATERIALS, 37 (37), 2025, DOI: 10.1002/adma.202505977. Abstract | BibTeX | Endnote @article{WOS:001520080900001,
title = {Strain-Induced Robust Skyrmion Lattice at Room Temperature in van der
Waals Ferromagnet},
author = {Xinyi Zhou and Iftikhar Ahmed Malik and Ruihuan Duan and Hanqing Shi and Chen Liu and Yan Luo and Yue Sun and Ruixi Chen and Yilin Liu and Shian Xia and Vanessa Li Zhang and Sheng Liu and Chao Zhu and Xixiang Zhang and Yi Du and Zheng Liu and Ting Yu},
doi = {10.1002/adma.202505977},
times_cited = {0},
issn = {0935-9648},
year = {2025},
date = {2025-09-01},
journal = {ADVANCED MATERIALS},
volume = {37},
number = {37},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Manipulating topological magnetic orders of 2D magnets by strain, once
achieved, offers enormous potential for future low-power flexible
spintronic applications. In this work, by placing Fe3GaTe2 (FGaT), a
room-temperature 2D ferromagnet, on flexible substrate, a field-free and
robust formation of skyrmion lattice induced by strain is demonstrated.
By applying a minimal strain of approximate to 0.80% to pre-annealed
FGaT flakes, the Magnetic Force Microscopy (MFM) tip directly triggers
the transition from maze-like domains to an ordered skyrmion lattice
while scanning the sample surface. The skyrmion lattice is rather stable
against extensive cyclic mechanical testing (stretching, bending, and
twisting over 2000 cycles each). It also exhibits stability across a
wide range of magnetic fields (approximate to 2.9 kOe) and temperatures
(approximate to 323 K), as well as long-term retention stability,
highlighting its robustness and field-free stabilization. The strain
effect reduces the lattice symmetry and enhances the
Dzyaloshinskii-Moriya interaction (DMI) of FGaT, thus stabilizing the
skyrmion lattice. The findings highlight the potential of FGaT for
integrating magnetic skyrmions into future low-power-consumption
flexible spintronics devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Manipulating topological magnetic orders of 2D magnets by strain, once
achieved, offers enormous potential for future low-power flexible
spintronic applications. In this work, by placing Fe3GaTe2 (FGaT), a
room-temperature 2D ferromagnet, on flexible substrate, a field-free and
robust formation of skyrmion lattice induced by strain is demonstrated.
By applying a minimal strain of approximate to 0.80% to pre-annealed
FGaT flakes, the Magnetic Force Microscopy (MFM) tip directly triggers
the transition from maze-like domains to an ordered skyrmion lattice
while scanning the sample surface. The skyrmion lattice is rather stable
against extensive cyclic mechanical testing (stretching, bending, and
twisting over 2000 cycles each). It also exhibits stability across a
wide range of magnetic fields (approximate to 2.9 kOe) and temperatures
(approximate to 323 K), as well as long-term retention stability,
highlighting its robustness and field-free stabilization. The strain
effect reduces the lattice symmetry and enhances the
Dzyaloshinskii-Moriya interaction (DMI) of FGaT, thus stabilizing the
skyrmion lattice. The findings highlight the potential of FGaT for
integrating magnetic skyrmions into future low-power-consumption
flexible spintronics devices. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFXinyi Zhou
Iftikhar Ahmed Malik
Ruihuan Duan
Hanqing Shi
Chen Liu
Yan Luo
Yue Sun
Ruixi Chen
Yilin Liu
Shian Xia
Vanessa Li Zhang
Sheng Liu
Chao Zhu
Xixiang Zhang
Yi Du
Zheng Liu
Ting Yu
- TIStrain-Induced Robust Skyrmion Lattice at Room Temperature in van der
Waals Ferromagnet - SOADVANCED MATERIALS
- DTArticle
- ABManipulating topological magnetic orders of 2D magnets by strain, once
achieved, offers enormous potential for future low-power flexible
spintronic applications. In this work, by placing Fe3GaTe2 (FGaT), a
room-temperature 2D ferromagnet, on flexible substrate, a field-free and
robust formation of skyrmion lattice induced by strain is demonstrated.
By applying a minimal strain of approximate to 0.80% to pre-annealed
FGaT flakes, the Magnetic Force Microscopy (MFM) tip directly triggers
the transition from maze-like domains to an ordered skyrmion lattice
while scanning the sample surface. The skyrmion lattice is rather stable
against extensive cyclic mechanical testing (stretching, bending, and
twisting over 2000 cycles each). It also exhibits stability across a
wide range of magnetic fields (approximate to 2.9 kOe) and temperatures
(approximate to 323 K), as well as long-term retention stability,
highlighting its robustness and field-free stabilization. The strain
effect reduces the lattice symmetry and enhances the
Dzyaloshinskii-Moriya interaction (DMI) of FGaT, thus stabilizing the
skyrmion lattice. The findings highlight the potential of FGaT for
integrating magnetic skyrmions into future low-power-consumption
flexible spintronics devices. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN0935-9648
- VL37
- DI10.1002/adma.202505977
- UTWOS:001520080900001
- ER
- EF
|
Luo, Lei; Wu, Yao; Li, Lei; Zhang, Zhonghan; Zheng, Lu; Zhu, Chao; Xu, Manzhang; Li, Weiwei; Duan, Ruihuan; He, Yanchao; Zhou, Xin; Fu, Qundong; Wu, Gang; Yang, Jiefu; Wu, Qi; Huang, Wei; Wang, Xuewen; Liu, Zheng Symmetry-broken MoS2 nanotubes through sequential
sulfurization of MoO2 nanowires NATURE COMMUNICATIONS, 16 (1), 2025, DOI: 10.1038/s41467-025-63333-1. Abstract | BibTeX | Endnote @article{WOS:001581146700041,
title = {Symmetry-broken MoS2 nanotubes through sequential
sulfurization of MoO2 nanowires},
author = {Lei Luo and Yao Wu and Lei Li and Zhonghan Zhang and Lu Zheng and Chao Zhu and Manzhang Xu and Weiwei Li and Ruihuan Duan and Yanchao He and Xin Zhou and Qundong Fu and Gang Wu and Jiefu Yang and Qi Wu and Wei Huang and Xuewen Wang and Zheng Liu},
doi = {10.1038/s41467-025-63333-1},
times_cited = {0},
year = {2025},
date = {2025-09-01},
journal = {NATURE COMMUNICATIONS},
volume = {16},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Transition metal dichalcogenide (TMD) nanotubes are emerging quantum
materials with distinctive symmetry-breaking properties, offering
significant potential for energy conversion technologies. However, the
direct synthesis of crystalline MoS2 nanotubes remains challenging due
to limited understanding of their high-temperature growth mechanisms.
Here, we present a robust and controllable strategy for the direct
growth of crystalline MoS2 nanotubes with well-defined tubular
morphology and high structural uniformity. This approach features two
key innovations: first, the controlled introduction of hydrogen reduces
MoO3 into one-dimensional (1D) tetragonal MoO2 (space group I4/m) chains
via a vapor-liquid-solid (VLS) mechanism; second, precise temperature
zoning ensures timely sulfur vapor infusion for complete sulfurization.
The intermediate MoO2 phase, with its singular crystallographic
orientation, acts as an ideal template for nanotube formation. Tellurium
(Te) serves as a fluxing mediator to promote the formation of uniform
MoO2 nanowires, which are subsequently converted into MoS2 nanotubes. By
systematically tuning the hydrogen concentration, we reveal its critical
role in directing product morphology. The resulting MoS2 nanotubes
exhibit pronounced symmetry breaking and significant bulk photovoltaic
performance, achieving a photoresponsivity of 510 A cm-2 under 1.88 x
104 W cm-2 illumination. This work advances both the fundamental
understanding of nanotube growth and the development of
symmetry-engineered optoelectronic materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Transition metal dichalcogenide (TMD) nanotubes are emerging quantum
materials with distinctive symmetry-breaking properties, offering
significant potential for energy conversion technologies. However, the
direct synthesis of crystalline MoS2 nanotubes remains challenging due
to limited understanding of their high-temperature growth mechanisms.
Here, we present a robust and controllable strategy for the direct
growth of crystalline MoS2 nanotubes with well-defined tubular
morphology and high structural uniformity. This approach features two
key innovations: first, the controlled introduction of hydrogen reduces
MoO3 into one-dimensional (1D) tetragonal MoO2 (space group I4/m) chains
via a vapor-liquid-solid (VLS) mechanism; second, precise temperature
zoning ensures timely sulfur vapor infusion for complete sulfurization.
The intermediate MoO2 phase, with its singular crystallographic
orientation, acts as an ideal template for nanotube formation. Tellurium
(Te) serves as a fluxing mediator to promote the formation of uniform
MoO2 nanowires, which are subsequently converted into MoS2 nanotubes. By
systematically tuning the hydrogen concentration, we reveal its critical
role in directing product morphology. The resulting MoS2 nanotubes
exhibit pronounced symmetry breaking and significant bulk photovoltaic
performance, achieving a photoresponsivity of 510 A cm-2 under 1.88 x
104 W cm-2 illumination. This work advances both the fundamental
understanding of nanotube growth and the development of
symmetry-engineered optoelectronic materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFLei Luo
Yao Wu
Lei Li
Zhonghan Zhang
Lu Zheng
Chao Zhu
Manzhang Xu
Weiwei Li
Ruihuan Duan
Yanchao He
Xin Zhou
Qundong Fu
Gang Wu
Jiefu Yang
Qi Wu
Wei Huang
Xuewen Wang
Zheng Liu
- TISymmetry-broken MoS2 nanotubes through sequential
sulfurization of MoO2 nanowires - SONATURE COMMUNICATIONS
- DTArticle
- ABTransition metal dichalcogenide (TMD) nanotubes are emerging quantum
materials with distinctive symmetry-breaking properties, offering
significant potential for energy conversion technologies. However, the
direct synthesis of crystalline MoS2 nanotubes remains challenging due
to limited understanding of their high-temperature growth mechanisms.
Here, we present a robust and controllable strategy for the direct
growth of crystalline MoS2 nanotubes with well-defined tubular
morphology and high structural uniformity. This approach features two
key innovations: first, the controlled introduction of hydrogen reduces
MoO3 into one-dimensional (1D) tetragonal MoO2 (space group I4/m) chains
via a vapor-liquid-solid (VLS) mechanism; second, precise temperature
zoning ensures timely sulfur vapor infusion for complete sulfurization.
The intermediate MoO2 phase, with its singular crystallographic
orientation, acts as an ideal template for nanotube formation. Tellurium
(Te) serves as a fluxing mediator to promote the formation of uniform
MoO2 nanowires, which are subsequently converted into MoS2 nanotubes. By
systematically tuning the hydrogen concentration, we reveal its critical
role in directing product morphology. The resulting MoS2 nanotubes
exhibit pronounced symmetry breaking and significant bulk photovoltaic
performance, achieving a photoresponsivity of 510 A cm-2 under 1.88 x
104 W cm-2 illumination. This work advances both the fundamental
understanding of nanotube growth and the development of
symmetry-engineered optoelectronic materials. - Z90
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- VL16
- DI10.1038/s41467-025-63333-1
- UTWOS:001581146700041
- ER
- EF
|
