2026
|
Zhou, Xiangyu; Gayduchenko, Igor; Kudriashov, Andrei; Shein, Kirill; Kuksov, Anton; Elesin, Leonid; Kravtsov, Mikhail; Shilov, Artur; Popova, Olga; Jana, Subhajit; Novoselov, Kostya S; Taniguchi, Takashi; Watanabe, Kenji; Goltsman, Gregory; Bandurin, Denis A Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies NANO LETTERS, 26 (22), pp. 7435-7442, 2026, DOI: 10.1021/acs.nanolett.6c01483. Abstract | BibTeX | Endnote @article{WOS:001776257400001,
title = {Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies},
author = {Xiangyu Zhou and Igor Gayduchenko and Andrei Kudriashov and Kirill Shein and Anton Kuksov and Leonid Elesin and Mikhail Kravtsov and Artur Shilov and Olga Popova and Subhajit Jana and Kostya S Novoselov and Takashi Taniguchi and Kenji Watanabe and Gregory Goltsman and Denis A Bandurin},
doi = {10.1021/acs.nanolett.6c01483},
times_cited = {0},
issn = {1530-6984},
year = {2026},
date = {2026-06-01},
journal = {NANO LETTERS},
volume = {26},
number = {22},
pages = {7435-7442},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Graphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Graphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFXiangyu Zhou
Igor Gayduchenko
Andrei Kudriashov
Kirill Shein
Anton Kuksov
Leonid Elesin
Mikhail Kravtsov
Artur Shilov
Olga Popova
Subhajit Jana
Kostya S Novoselov
Takashi Taniguchi
Kenji Watanabe
Gregory Goltsman
Denis A Bandurin
- TIGate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies - SONANO LETTERS
- DTArticle
- ABGraphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1530-6984
- VL26
- BP7435
- EP7442
- DI10.1021/acs.nanolett.6c01483
- UTWOS:001776257400001
- ER
- EF
|
Elesin, Leonid; Shilov, Arthur L; Jana, Subhajit; Mazurenko, Ilya; Pantaleon, Pierre A; Kashchenko, Mikhail; Krivovichev, Nikita; Dremov, Viacheslav; Gayduchenko, Igor; Taniguchi, Takashi; Watanabe, Kenji; Wang, Yibo; Novoselov, Kostya S; Svintsov, Dmitry A; Goltsman, Grigory; Titova, Elena I; Bandurin, Denis A Enhanced Terahertz Thermoelectricity Via Engineered Van Hove
Singularities and Nernst Effect in Moiré Superlattices ADVANCED FUNCTIONAL MATERIALS, 2026, DOI: 10.1002/adfm.202528325. Abstract | BibTeX | Endnote @article{WOS:001775895800001,
title = {Enhanced Terahertz Thermoelectricity Via Engineered Van Hove
Singularities and Nernst Effect in Moiré Superlattices},
author = {Leonid Elesin and Arthur L Shilov and Subhajit Jana and Ilya Mazurenko and Pierre A Pantaleon and Mikhail Kashchenko and Nikita Krivovichev and Viacheslav Dremov and Igor Gayduchenko and Takashi Taniguchi and Kenji Watanabe and Yibo Wang and Kostya S Novoselov and Dmitry A Svintsov and Grigory Goltsman and Elena I Titova and Denis A Bandurin},
doi = {10.1002/adfm.202528325},
times_cited = {0},
issn = {1616-301X},
year = {2026},
date = {2026-05-01},
journal = {ADVANCED FUNCTIONAL MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Thermoelectric materials, long explored for energy harvesting and
thermal sensing, convert heat directly into electrical signals.
Extending their application to the terahertz (THz) frequency range opens
opportunities for low-noise, bias-free THz detection, yet conventional
thermoelectrics lack the sensitivity required for practical devices.
Thermoelectric coefficients can be strongly enhanced near van Hove
singularities (VHS), though these are usually difficult to access in
conventional materials. Here it is shown that moir & eacute; band
engineering unlocks these singularities for THz optoelectronics. Using
graphene and bilayer graphene/hexagonal boron nitride (hBN) moir &
eacute; heterostructures as a model system, a pronounced enhancement of
the THz photothermoelectric response is observed when the Fermi level is
tuned to band-structure singularities. Applying a relatively small
magnetic field further boosts the response through the THz-driven Nernst
effect, a transverse thermoelectric current driven by the THz-induced
temperature gradient. These results establish moir & eacute;
superlattices as a versatile platform for THz thermoelectricity and
highlight engineered band structures as a route to high-performance THz
optoelectronic devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Thermoelectric materials, long explored for energy harvesting and
thermal sensing, convert heat directly into electrical signals.
Extending their application to the terahertz (THz) frequency range opens
opportunities for low-noise, bias-free THz detection, yet conventional
thermoelectrics lack the sensitivity required for practical devices.
Thermoelectric coefficients can be strongly enhanced near van Hove
singularities (VHS), though these are usually difficult to access in
conventional materials. Here it is shown that moir & eacute; band
engineering unlocks these singularities for THz optoelectronics. Using
graphene and bilayer graphene/hexagonal boron nitride (hBN) moir &
eacute; heterostructures as a model system, a pronounced enhancement of
the THz photothermoelectric response is observed when the Fermi level is
tuned to band-structure singularities. Applying a relatively small
magnetic field further boosts the response through the THz-driven Nernst
effect, a transverse thermoelectric current driven by the THz-induced
temperature gradient. These results establish moir & eacute;
superlattices as a versatile platform for THz thermoelectricity and
highlight engineered band structures as a route to high-performance THz
optoelectronic devices. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFLeonid Elesin
Arthur L Shilov
Subhajit Jana
Ilya Mazurenko
Pierre A Pantaleon
Mikhail Kashchenko
Nikita Krivovichev
Viacheslav Dremov
Igor Gayduchenko
Takashi Taniguchi
Kenji Watanabe
Yibo Wang
Kostya S Novoselov
Dmitry A Svintsov
Grigory Goltsman
Elena I Titova
Denis A Bandurin
- TIEnhanced Terahertz Thermoelectricity Via Engineered Van Hove
Singularities and Nernst Effect in Moiré Superlattices - SOADVANCED FUNCTIONAL MATERIALS
- DTArticle
- ABThermoelectric materials, long explored for energy harvesting and
thermal sensing, convert heat directly into electrical signals.
Extending their application to the terahertz (THz) frequency range opens
opportunities for low-noise, bias-free THz detection, yet conventional
thermoelectrics lack the sensitivity required for practical devices.
Thermoelectric coefficients can be strongly enhanced near van Hove
singularities (VHS), though these are usually difficult to access in
conventional materials. Here it is shown that moir & eacute; band
engineering unlocks these singularities for THz optoelectronics. Using
graphene and bilayer graphene/hexagonal boron nitride (hBN) moir &
eacute; heterostructures as a model system, a pronounced enhancement of
the THz photothermoelectric response is observed when the Fermi level is
tuned to band-structure singularities. Applying a relatively small
magnetic field further boosts the response through the THz-driven Nernst
effect, a transverse thermoelectric current driven by the THz-induced
temperature gradient. These results establish moir & eacute;
superlattices as a versatile platform for THz thermoelectricity and
highlight engineered band structures as a route to high-performance THz
optoelectronic devices. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN1616-301X
- DI10.1002/adfm.202528325
- UTWOS:001775895800001
- ER
- EF
|
Nikolaev, Konstantin G; Ivanov, Artemii; Wen, Han; Wang, Qian; Kravtsov, Mikhail; Bandurin, Denis A; Karim, Nazmul; Novoselov, Kostya S; Andreeva, Daria V One-Spot Synthesized Crystalline Graphene/PANI for Wearable Ionic
Transistor Textiles SMALL STRUCTURES, 7 (4), 2026, DOI: 10.1002/sstr.202500904. Abstract | BibTeX | Endnote @article{WOS:001751311800005,
title = {One-Spot Synthesized Crystalline Graphene/PANI for Wearable Ionic
Transistor Textiles},
author = {Konstantin G Nikolaev and Artemii Ivanov and Han Wen and Qian Wang and Mikhail Kravtsov and Denis A Bandurin and Nazmul Karim and Kostya S Novoselov and Daria V Andreeva},
doi = {10.1002/sstr.202500904},
times_cited = {0},
year = {2026},
date = {2026-04-01},
journal = {SMALL STRUCTURES},
volume = {7},
number = {4},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Here, we report a one-spot, temperature-controlled AC
electropolymerization strategy for converting graphene oxide and aniline
into a crystalline, processable reduced graphene oxide (rGO)/polyaniline
(PANI) composite for wearable ionic transistor textiles. By tuning the
electropolymerization temperature from 4 degrees C to 55 degrees C under
a low-frequency triangular AC waveform, followed by mild postreduction,
conformal polycrystalline PANI nanodomains are grown directly on rGO
sheets. Low-temperature synthesis yields the highest structural ordering
and the lowest fraction of protonated imine species, directly linking
growth conditions to mixed ionic-electronic transport behavior. The
resulting rGO/PANI composite functions as an electrolyte-gated
transistor with stable operation and amplified gate response.
Furthermore, the composite can be stencil printed onto cotton textiles
to realize ratiometric Na+/K+ sensing at constant ionic strength,
highlighting its potential for scalable, wearable ion-sensing
architectures.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Here, we report a one-spot, temperature-controlled AC
electropolymerization strategy for converting graphene oxide and aniline
into a crystalline, processable reduced graphene oxide (rGO)/polyaniline
(PANI) composite for wearable ionic transistor textiles. By tuning the
electropolymerization temperature from 4 degrees C to 55 degrees C under
a low-frequency triangular AC waveform, followed by mild postreduction,
conformal polycrystalline PANI nanodomains are grown directly on rGO
sheets. Low-temperature synthesis yields the highest structural ordering
and the lowest fraction of protonated imine species, directly linking
growth conditions to mixed ionic-electronic transport behavior. The
resulting rGO/PANI composite functions as an electrolyte-gated
transistor with stable operation and amplified gate response.
Furthermore, the composite can be stencil printed onto cotton textiles
to realize ratiometric Na+/K+ sensing at constant ionic strength,
highlighting its potential for scalable, wearable ion-sensing
architectures. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFKonstantin G Nikolaev
Artemii Ivanov
Han Wen
Qian Wang
Mikhail Kravtsov
Denis A Bandurin
Nazmul Karim
Kostya S Novoselov
Daria V Andreeva
- TIOne-Spot Synthesized Crystalline Graphene/PANI for Wearable Ionic
Transistor Textiles - SOSMALL STRUCTURES
- DTArticle
- ABHere, we report a one-spot, temperature-controlled AC
electropolymerization strategy for converting graphene oxide and aniline
into a crystalline, processable reduced graphene oxide (rGO)/polyaniline
(PANI) composite for wearable ionic transistor textiles. By tuning the
electropolymerization temperature from 4 degrees C to 55 degrees C under
a low-frequency triangular AC waveform, followed by mild postreduction,
conformal polycrystalline PANI nanodomains are grown directly on rGO
sheets. Low-temperature synthesis yields the highest structural ordering
and the lowest fraction of protonated imine species, directly linking
growth conditions to mixed ionic-electronic transport behavior. The
resulting rGO/PANI composite functions as an electrolyte-gated
transistor with stable operation and amplified gate response.
Furthermore, the composite can be stencil printed onto cotton textiles
to realize ratiometric Na+/K+ sensing at constant ionic strength,
highlighting its potential for scalable, wearable ion-sensing
architectures. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- VL7
- DI10.1002/sstr.202500904
- UTWOS:001751311800005
- ER
- EF
|
2025
|
Sokolik, Alexey A; Aminov, Azat F; Vdovin, Evgenii E; Khanin, Yurii N; Kashchenko, Mikhail A; Bandurin, Denis A; Ghazaryan, Davit A; Morozov, Sergey V; Novoselov, Kostya S Probing the features of electron dispersion by tunneling between
slightly twisted bilayer graphene sheets APPLIED PHYSICS LETTERS, 127 (23), 2025, DOI: 10.1063/5.0303858. Abstract | BibTeX | Endnote @article{WOS:001637543500003,
title = {Probing the features of electron dispersion by tunneling between
slightly twisted bilayer graphene sheets},
author = {Alexey A Sokolik and Azat F Aminov and Evgenii E Vdovin and Yurii N Khanin and Mikhail A Kashchenko and Denis A Bandurin and Davit A Ghazaryan and Sergey V Morozov and Kostya S Novoselov},
doi = {10.1063/5.0303858},
times_cited = {0},
issn = {0003-6951},
year = {2025},
date = {2025-12-01},
journal = {APPLIED PHYSICS LETTERS},
volume = {127},
number = {23},
publisher = {AIP Publishing},
address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA},
abstract = {Tunneling conductance between two bilayer graphene (BLG) sheets
separated by 2 nm-thick insulating barrier was measured in two devices
with the twist angles between BLGs less than 1 degrees. At small bias
voltages, tunneling occurs with conservation of energy and momentum at
the points of intersection between two relatively shifted Fermi circles.
Here, we experimentally found and theoretically described signatures of
electron-hole asymmetric band structure of BLG: since holes are heavier,
the tunneling conductance is enhanced at the hole doping due to the
higher density of states. Another key feature of BLG that we explore is
gap opening in a vertical electric field with a strong polarization of
electron wave function at van Hove singularities near the gap edges.
This polarization, by shifting electron wave function in one BLG closer
to or father from the other BLG, gives rise to asymmetric tunneling
resonances in the conductance around charge neutrality points, which
result in strong sensitivity of the tunneling current to minor changes
of the gate voltages. The observed phenomena are reproduced by our
theoretical model taking into account electrostatics of the dual-gated
structure, quantum capacitance effects, and self-consistent gap openings
in both BLGs.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Tunneling conductance between two bilayer graphene (BLG) sheets
separated by 2 nm-thick insulating barrier was measured in two devices
with the twist angles between BLGs less than 1 degrees. At small bias
voltages, tunneling occurs with conservation of energy and momentum at
the points of intersection between two relatively shifted Fermi circles.
Here, we experimentally found and theoretically described signatures of
electron-hole asymmetric band structure of BLG: since holes are heavier,
the tunneling conductance is enhanced at the hole doping due to the
higher density of states. Another key feature of BLG that we explore is
gap opening in a vertical electric field with a strong polarization of
electron wave function at van Hove singularities near the gap edges.
This polarization, by shifting electron wave function in one BLG closer
to or father from the other BLG, gives rise to asymmetric tunneling
resonances in the conductance around charge neutrality points, which
result in strong sensitivity of the tunneling current to minor changes
of the gate voltages. The observed phenomena are reproduced by our
theoretical model taking into account electrostatics of the dual-gated
structure, quantum capacitance effects, and self-consistent gap openings
in both BLGs. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFAlexey A Sokolik
Azat F Aminov
Evgenii E Vdovin
Yurii N Khanin
Mikhail A Kashchenko
Denis A Bandurin
Davit A Ghazaryan
Sergey V Morozov
Kostya S Novoselov
- TIProbing the features of electron dispersion by tunneling between
slightly twisted bilayer graphene sheets - SOAPPLIED PHYSICS LETTERS
- DTArticle
- ABTunneling conductance between two bilayer graphene (BLG) sheets
separated by 2 nm-thick insulating barrier was measured in two devices
with the twist angles between BLGs less than 1 degrees. At small bias
voltages, tunneling occurs with conservation of energy and momentum at
the points of intersection between two relatively shifted Fermi circles.
Here, we experimentally found and theoretically described signatures of
electron-hole asymmetric band structure of BLG: since holes are heavier,
the tunneling conductance is enhanced at the hole doping due to the
higher density of states. Another key feature of BLG that we explore is
gap opening in a vertical electric field with a strong polarization of
electron wave function at van Hove singularities near the gap edges.
This polarization, by shifting electron wave function in one BLG closer
to or father from the other BLG, gives rise to asymmetric tunneling
resonances in the conductance around charge neutrality points, which
result in strong sensitivity of the tunneling current to minor changes
of the gate voltages. The observed phenomena are reproduced by our
theoretical model taking into account electrostatics of the dual-gated
structure, quantum capacitance effects, and self-consistent gap openings
in both BLGs. - Z90
- PUAIP Publishing
- PA1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
- SN0003-6951
- VL127
- DI10.1063/5.0303858
- UTWOS:001637543500003
- ER
- EF
|
Mylnikov, Dmitry A; Safonov, Ilya V; Kashchenko, Mikhail A; Novoselov, Kostya S; Bandurin, Denis A; Chernov, Alexander I; Svintsov, Dmitry A Hysteresis-controlled Van der Waals tunneling infrared detector enabled
by selective layer heating NPJ 2D MATERIALS AND APPLICATIONS, 9 (1), 2025, DOI: 10.1038/s41699-025-00612-x. Abstract | BibTeX | Endnote @article{WOS:001613817900003,
title = {Hysteresis-controlled Van der Waals tunneling infrared detector enabled
by selective layer heating},
author = {Dmitry A Mylnikov and Ilya V Safonov and Mikhail A Kashchenko and Kostya S Novoselov and Denis A Bandurin and Alexander I Chernov and Dmitry A Svintsov},
doi = {10.1038/s41699-025-00612-x},
times_cited = {0},
year = {2025},
date = {2025-11-01},
journal = {NPJ 2D MATERIALS AND APPLICATIONS},
volume = {9},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Mid-infrared (mid-IR) photodetectors play a crucial role in various
applications, including the development of biomimetic vision systems
that emulate neuronal function. In this work, we demonstrate a new
infrared photodetector based on graphene/boron nitride/graphene
tunneling heterostructure combining perception and memory functions. The
detection principle is based on the shift of the N-shaped tunneling
resonant feature in the I-V-curve upon infrared illumination. In the
current-biased mode, such a shift results in a strong voltage ``jump''
(0.05-1 V) to another branch of the I-V-characteristic that persists
after switching the radiation off. As a result, the structure can be
considered as a visual neuron that combines perception and memory
functions. More interestingly, the direction of voltage switching
depends on laser beam position, adding extra recognition functionality
to our perception device. The observed phenomena are explained within
the theory of selective light-induced heating of electrons in the
graphene layers, and the tunneling of hot carriers.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Mid-infrared (mid-IR) photodetectors play a crucial role in various
applications, including the development of biomimetic vision systems
that emulate neuronal function. In this work, we demonstrate a new
infrared photodetector based on graphene/boron nitride/graphene
tunneling heterostructure combining perception and memory functions. The
detection principle is based on the shift of the N-shaped tunneling
resonant feature in the I-V-curve upon infrared illumination. In the
current-biased mode, such a shift results in a strong voltage ``jump''
(0.05-1 V) to another branch of the I-V-characteristic that persists
after switching the radiation off. As a result, the structure can be
considered as a visual neuron that combines perception and memory
functions. More interestingly, the direction of voltage switching
depends on laser beam position, adding extra recognition functionality
to our perception device. The observed phenomena are explained within
the theory of selective light-induced heating of electrons in the
graphene layers, and the tunneling of hot carriers. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFDmitry A Mylnikov
Ilya V Safonov
Mikhail A Kashchenko
Kostya S Novoselov
Denis A Bandurin
Alexander I Chernov
Dmitry A Svintsov
- TIHysteresis-controlled Van der Waals tunneling infrared detector enabled
by selective layer heating - SONPJ 2D MATERIALS AND APPLICATIONS
- DTArticle
- ABMid-infrared (mid-IR) photodetectors play a crucial role in various
applications, including the development of biomimetic vision systems
that emulate neuronal function. In this work, we demonstrate a new
infrared photodetector based on graphene/boron nitride/graphene
tunneling heterostructure combining perception and memory functions. The
detection principle is based on the shift of the N-shaped tunneling
resonant feature in the I-V-curve upon infrared illumination. In the
current-biased mode, such a shift results in a strong voltage ``jump''
(0.05-1 V) to another branch of the I-V-characteristic that persists
after switching the radiation off. As a result, the structure can be
considered as a visual neuron that combines perception and memory
functions. More interestingly, the direction of voltage switching
depends on laser beam position, adding extra recognition functionality
to our perception device. The observed phenomena are explained within
the theory of selective light-induced heating of electrons in the
graphene layers, and the tunneling of hot carriers. - Z90
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- VL9
- DI10.1038/s41699-025-00612-x
- UTWOS:001613817900003
- ER
- EF
|
