2026
|
Elesin, L; Shilov, A L; Kravtsov, M; Zhou, X; Lukianov, M; Kuksov, A; Jana, S; Iorsh, I; Izmaylov, R; Shein, K; Gayduchenko, I; Taniguchi, T; Watanabe, K; Novoselov, K S; Goltsman, G N; Principi, A; Bandurin, D A Correlated insulator Moiré bolometer NATURE COMMUNICATIONS, 17 (1), 2026, DOI: 10.1038/s41467-026-76389-4. Abstract | BibTeX | Endnote @article{WOS:001869851900007,
title = {Correlated insulator Moiré bolometer},
author = {L Elesin and A L Shilov and M Kravtsov and X Zhou and M Lukianov and A Kuksov and S Jana and I Iorsh and R Izmaylov and K Shein and I Gayduchenko and T Taniguchi and K Watanabe and K S Novoselov and G N Goltsman and A Principi and D A Bandurin},
doi = {10.1038/s41467-026-76389-4},
times_cited = {0},
year = {2026},
date = {2026-08-01},
journal = {NATURE COMMUNICATIONS},
volume = {17},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Light incident on an insulator is generally not expected to turn it into
a metal without invoking intense ultrafast excitation that leads to
transient structural transitions. Here we show that magic-angle twisted
bilayer graphene tuned to half filling of the moir & eacute; band
provides a notable exception to this expectation. We find that weak
long-wavelength photons, with energies comparable to the flat-band
width, selectively heat the low-heat-capacity electronic subsystem,
thereby suppressing the correlated gap. This produces a giant resistance
change governed not by a persistent photocarrier population, but by the
extreme sensitivity of a many-body correlated gap to weak electronic
heating. The resulting photon-driven insulator-to-metal transition
produces a broadband low-noise photoresponse with voltage responsivity
exceeding millivolts per nW of absorbed power. The mechanism is dual to
superconducting hot-electron response: radiation-heated electrons
suppress a many-body order, but in reverse the correlated insulator
melts into a metal, providing robustness to magnetic fields of several
tesla and a sharp insulator-to-metal resistive contrast. Our results
establish correlated flat-band systems as a platform for ultrasensitive
detection of faint long-wavelength radiation.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Light incident on an insulator is generally not expected to turn it into
a metal without invoking intense ultrafast excitation that leads to
transient structural transitions. Here we show that magic-angle twisted
bilayer graphene tuned to half filling of the moir & eacute; band
provides a notable exception to this expectation. We find that weak
long-wavelength photons, with energies comparable to the flat-band
width, selectively heat the low-heat-capacity electronic subsystem,
thereby suppressing the correlated gap. This produces a giant resistance
change governed not by a persistent photocarrier population, but by the
extreme sensitivity of a many-body correlated gap to weak electronic
heating. The resulting photon-driven insulator-to-metal transition
produces a broadband low-noise photoresponse with voltage responsivity
exceeding millivolts per nW of absorbed power. The mechanism is dual to
superconducting hot-electron response: radiation-heated electrons
suppress a many-body order, but in reverse the correlated insulator
melts into a metal, providing robustness to magnetic fields of several
tesla and a sharp insulator-to-metal resistive contrast. Our results
establish correlated flat-band systems as a platform for ultrasensitive
detection of faint long-wavelength radiation. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFL Elesin
A L Shilov
M Kravtsov
X Zhou
M Lukianov
A Kuksov
S Jana
I Iorsh
R Izmaylov
K Shein
I Gayduchenko
T Taniguchi
K Watanabe
K S Novoselov
G N Goltsman
A Principi
D A Bandurin
- TICorrelated insulator Moiré bolometer
- SONATURE COMMUNICATIONS
- DTArticle
- ABLight incident on an insulator is generally not expected to turn it into
a metal without invoking intense ultrafast excitation that leads to
transient structural transitions. Here we show that magic-angle twisted
bilayer graphene tuned to half filling of the moir & eacute; band
provides a notable exception to this expectation. We find that weak
long-wavelength photons, with energies comparable to the flat-band
width, selectively heat the low-heat-capacity electronic subsystem,
thereby suppressing the correlated gap. This produces a giant resistance
change governed not by a persistent photocarrier population, but by the
extreme sensitivity of a many-body correlated gap to weak electronic
heating. The resulting photon-driven insulator-to-metal transition
produces a broadband low-noise photoresponse with voltage responsivity
exceeding millivolts per nW of absorbed power. The mechanism is dual to
superconducting hot-electron response: radiation-heated electrons
suppress a many-body order, but in reverse the correlated insulator
melts into a metal, providing robustness to magnetic fields of several
tesla and a sharp insulator-to-metal resistive contrast. Our results
establish correlated flat-band systems as a platform for ultrasensitive
detection of faint long-wavelength radiation. - Z90
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- VL17
- DI10.1038/s41467-026-76389-4
- UTWOS:001869851900007
- ER
- EF
|
Shilov, A L; Elesin, L; Kravtsov, M; Covey, J; Ganichev, S D; Kashchenko, M A; Popova, O; Izmaylov, R; Shein, K; Gayduchenko, I; Zhou, X; Yahniuk, I; Taniguchi, T; Watanabe, K; Berdyugin, A I; Wang, Y; Perebeinos, V; Svintsov, D A; Novoselov, K S; Principi, A; Maslov, D L; Bandurin, D A Interaction-limited conductivity of twisted bilayer graphene revealed by
giant terahertz photoresistance NATURE COMMUNICATIONS, 17 (1), 2026, DOI: 10.1038/s41467-026-76554-9. Abstract | BibTeX | Endnote @article{WOS:001874211200016,
title = {Interaction-limited conductivity of twisted bilayer graphene revealed by
giant terahertz photoresistance},
author = {A L Shilov and L Elesin and M Kravtsov and J Covey and S D Ganichev and M A Kashchenko and O Popova and R Izmaylov and K Shein and I Gayduchenko and X Zhou and I Yahniuk and T Taniguchi and K Watanabe and A I Berdyugin and Y Wang and V Perebeinos and D A Svintsov and K S Novoselov and A Principi and D L Maslov and D A Bandurin},
doi = {10.1038/s41467-026-76554-9},
times_cited = {0},
year = {2026},
date = {2026-08-01},
journal = {NATURE COMMUNICATIONS},
volume = {17},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Identifying the microscopic processes limiting conductivity is essential
for understanding correlated quantum materials. In twisted bilayer
graphene, metallic resistivity follows rho similar to T-alpha with
widely varying alpha, fueling competing interpretations from
phonon-limited transport and umklapp scattering to strange metallicity
and heavy-fermion renormalization. Here, we use terahertz excitation to
selectively heat electrons while keeping the lattice cold, separating
electron-electron from electron-phonon contributions to resistivity. We
observe a giant terahertz photoresistance - reaching several k Omega -
showing that electron-electron scattering remains significant even in
regimes previously attributed to phonons, including the linear-in-T
resistivity near the magic angle. Away from it, photoresistance coexists
with quadratic-in-T resistivity at low carrier densities where umklapp
and Baber scattering are kinematically forbidden. We identify the
breakdown of Galilean invariance in the Dirac dispersion, enabling
inter-valley electron-electron collisions, as a possible origin. Our
approach establishes terahertz-driven hot-electron transport as a
framework for disentangling scattering mechanisms in low-density quantum
materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Identifying the microscopic processes limiting conductivity is essential
for understanding correlated quantum materials. In twisted bilayer
graphene, metallic resistivity follows rho similar to T-alpha with
widely varying alpha, fueling competing interpretations from
phonon-limited transport and umklapp scattering to strange metallicity
and heavy-fermion renormalization. Here, we use terahertz excitation to
selectively heat electrons while keeping the lattice cold, separating
electron-electron from electron-phonon contributions to resistivity. We
observe a giant terahertz photoresistance - reaching several k Omega -
showing that electron-electron scattering remains significant even in
regimes previously attributed to phonons, including the linear-in-T
resistivity near the magic angle. Away from it, photoresistance coexists
with quadratic-in-T resistivity at low carrier densities where umklapp
and Baber scattering are kinematically forbidden. We identify the
breakdown of Galilean invariance in the Dirac dispersion, enabling
inter-valley electron-electron collisions, as a possible origin. Our
approach establishes terahertz-driven hot-electron transport as a
framework for disentangling scattering mechanisms in low-density quantum
materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFA L Shilov
L Elesin
M Kravtsov
J Covey
S D Ganichev
M A Kashchenko
O Popova
R Izmaylov
K Shein
I Gayduchenko
X Zhou
I Yahniuk
T Taniguchi
K Watanabe
A I Berdyugin
Y Wang
V Perebeinos
D A Svintsov
K S Novoselov
A Principi
D L Maslov
D A Bandurin
- TIInteraction-limited conductivity of twisted bilayer graphene revealed by
giant terahertz photoresistance - SONATURE COMMUNICATIONS
- DTArticle
- ABIdentifying the microscopic processes limiting conductivity is essential
for understanding correlated quantum materials. In twisted bilayer
graphene, metallic resistivity follows rho similar to T-alpha with
widely varying alpha, fueling competing interpretations from
phonon-limited transport and umklapp scattering to strange metallicity
and heavy-fermion renormalization. Here, we use terahertz excitation to
selectively heat electrons while keeping the lattice cold, separating
electron-electron from electron-phonon contributions to resistivity. We
observe a giant terahertz photoresistance - reaching several k Omega -
showing that electron-electron scattering remains significant even in
regimes previously attributed to phonons, including the linear-in-T
resistivity near the magic angle. Away from it, photoresistance coexists
with quadratic-in-T resistivity at low carrier densities where umklapp
and Baber scattering are kinematically forbidden. We identify the
breakdown of Galilean invariance in the Dirac dispersion, enabling
inter-valley electron-electron collisions, as a possible origin. Our
approach establishes terahertz-driven hot-electron transport as a
framework for disentangling scattering mechanisms in low-density quantum
materials. - Z90
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- VL17
- DI10.1038/s41467-026-76554-9
- UTWOS:001874211200016
- ER
- EF
|
Elesin, Leonid; Shilov, Arthur L; Jana, Subhajit; Mazurenko, Ilya; Pantaleon, Pierre A; Kashchenko, Mikhail; Krivovichev, Nikita; Dremov, Viacheslav; Gayduchenko, Igor; Taniguchi, Takashi; Watanabe, Kenji; Wang, Yibo; Novoselov, Kostya S; Svintsov, Dmitry A; Goltsman, Grigory; Titova, Elena I; Bandurin, Denis A Enhanced Terahertz Thermoelectricity Via Engineered Van Hove
Singularities and Nernst Effect in Moiré Superlattices ADVANCED FUNCTIONAL MATERIALS, 36 (50), 2026, DOI: 10.1002/adfm.202528325. Abstract | BibTeX | Endnote @article{WOS:001775895800001,
title = {Enhanced Terahertz Thermoelectricity Via Engineered Van Hove
Singularities and Nernst Effect in Moiré Superlattices},
author = {Leonid Elesin and Arthur L Shilov and Subhajit Jana and Ilya Mazurenko and Pierre A Pantaleon and Mikhail Kashchenko and Nikita Krivovichev and Viacheslav Dremov and Igor Gayduchenko and Takashi Taniguchi and Kenji Watanabe and Yibo Wang and Kostya S Novoselov and Dmitry A Svintsov and Grigory Goltsman and Elena I Titova and Denis A Bandurin},
doi = {10.1002/adfm.202528325},
times_cited = {1},
issn = {1616-301X},
year = {2026},
date = {2026-06-01},
journal = {ADVANCED FUNCTIONAL MATERIALS},
volume = {36},
number = {50},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Thermoelectric materials, long explored for energy harvesting and
thermal sensing, convert heat directly into electrical signals.
Extending their application to the terahertz (THz) frequency range opens
opportunities for low-noise, bias-free THz detection, yet conventional
thermoelectrics lack the sensitivity required for practical devices.
Thermoelectric coefficients can be strongly enhanced near van Hove
singularities (VHS), though these are usually difficult to access in
conventional materials. Here it is shown that moir & eacute; band
engineering unlocks these singularities for THz optoelectronics. Using
graphene and bilayer graphene/hexagonal boron nitride (hBN) moir &
eacute; heterostructures as a model system, a pronounced enhancement of
the THz photothermoelectric response is observed when the Fermi level is
tuned to band-structure singularities. Applying a relatively small
magnetic field further boosts the response through the THz-driven Nernst
effect, a transverse thermoelectric current driven by the THz-induced
temperature gradient. These results establish moir & eacute;
superlattices as a versatile platform for THz thermoelectricity and
highlight engineered band structures as a route to high-performance THz
optoelectronic devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Thermoelectric materials, long explored for energy harvesting and
thermal sensing, convert heat directly into electrical signals.
Extending their application to the terahertz (THz) frequency range opens
opportunities for low-noise, bias-free THz detection, yet conventional
thermoelectrics lack the sensitivity required for practical devices.
Thermoelectric coefficients can be strongly enhanced near van Hove
singularities (VHS), though these are usually difficult to access in
conventional materials. Here it is shown that moir & eacute; band
engineering unlocks these singularities for THz optoelectronics. Using
graphene and bilayer graphene/hexagonal boron nitride (hBN) moir &
eacute; heterostructures as a model system, a pronounced enhancement of
the THz photothermoelectric response is observed when the Fermi level is
tuned to band-structure singularities. Applying a relatively small
magnetic field further boosts the response through the THz-driven Nernst
effect, a transverse thermoelectric current driven by the THz-induced
temperature gradient. These results establish moir & eacute;
superlattices as a versatile platform for THz thermoelectricity and
highlight engineered band structures as a route to high-performance THz
optoelectronic devices. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFLeonid Elesin
Arthur L Shilov
Subhajit Jana
Ilya Mazurenko
Pierre A Pantaleon
Mikhail Kashchenko
Nikita Krivovichev
Viacheslav Dremov
Igor Gayduchenko
Takashi Taniguchi
Kenji Watanabe
Yibo Wang
Kostya S Novoselov
Dmitry A Svintsov
Grigory Goltsman
Elena I Titova
Denis A Bandurin
- TIEnhanced Terahertz Thermoelectricity Via Engineered Van Hove
Singularities and Nernst Effect in Moiré Superlattices - SOADVANCED FUNCTIONAL MATERIALS
- DTArticle
- ABThermoelectric materials, long explored for energy harvesting and
thermal sensing, convert heat directly into electrical signals.
Extending their application to the terahertz (THz) frequency range opens
opportunities for low-noise, bias-free THz detection, yet conventional
thermoelectrics lack the sensitivity required for practical devices.
Thermoelectric coefficients can be strongly enhanced near van Hove
singularities (VHS), though these are usually difficult to access in
conventional materials. Here it is shown that moir & eacute; band
engineering unlocks these singularities for THz optoelectronics. Using
graphene and bilayer graphene/hexagonal boron nitride (hBN) moir &
eacute; heterostructures as a model system, a pronounced enhancement of
the THz photothermoelectric response is observed when the Fermi level is
tuned to band-structure singularities. Applying a relatively small
magnetic field further boosts the response through the THz-driven Nernst
effect, a transverse thermoelectric current driven by the THz-induced
temperature gradient. These results establish moir & eacute;
superlattices as a versatile platform for THz thermoelectricity and
highlight engineered band structures as a route to high-performance THz
optoelectronic devices. - Z91
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN1616-301X
- VL36
- DI10.1002/adfm.202528325
- UTWOS:001775895800001
- ER
- EF
|
Zhou, Xiangyu; Gayduchenko, Igor; Kudriashov, Andrei; Shein, Kirill; Kuksov, Anton; Elesin, Leonid; Kravtsov, Mikhail; Shilov, Artur; Popova, Olga; Jana, Subhajit; Novoselov, Kostya S; Taniguchi, Takashi; Watanabe, Kenji; Goltsman, Gregory; Bandurin, Denis A Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies NANO LETTERS, 26 (22), pp. 7435-7442, 2026, DOI: 10.1021/acs.nanolett.6c01483. Abstract | BibTeX | Endnote @article{WOS:001776257400001,
title = {Gate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies},
author = {Xiangyu Zhou and Igor Gayduchenko and Andrei Kudriashov and Kirill Shein and Anton Kuksov and Leonid Elesin and Mikhail Kravtsov and Artur Shilov and Olga Popova and Subhajit Jana and Kostya S Novoselov and Takashi Taniguchi and Kenji Watanabe and Gregory Goltsman and Denis A Bandurin},
doi = {10.1021/acs.nanolett.6c01483},
times_cited = {0},
issn = {1530-6984},
year = {2026},
date = {2026-06-01},
journal = {NANO LETTERS},
volume = {26},
number = {22},
pages = {7435-7442},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Graphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Graphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFXiangyu Zhou
Igor Gayduchenko
Andrei Kudriashov
Kirill Shein
Anton Kuksov
Leonid Elesin
Mikhail Kravtsov
Artur Shilov
Olga Popova
Subhajit Jana
Kostya S Novoselov
Takashi Taniguchi
Kenji Watanabe
Gregory Goltsman
Denis A Bandurin
- TIGate-Tunable Photoresponse of Graphene Josephson Junctions at Terahertz
Frequencies - SONANO LETTERS
- DTArticle
- ABGraphene Josephson junctions (JJs) are promising platforms for broadband
quantum sensing because graphene combines frequency-independent
absorption, ultralow electronic heat capacity, and weak electron-phonon
coupling. While previous studies focused on microwave and infrared
regimes, the terahertz (THz) range-where highly sensitive quantum
detectors remain scarce-has largely remained unexplored. Here, we
demonstrate a gate-tunable THz photoresponse in graphene JJs.
Low-intensity THz illumination strongly suppresses the critical current,
generating a pronounced photovoltage under current bias. From
photovoltage measurements and independent electron thermometry, we
extract a responsivity of 88 kV W-1 and a noise-equivalent power of 45
aW Hz(-1/2) at 1.7 K. In addition, the hysteretic regime that persists
up to 0.9 K suggests a possible route toward single-photon THz detection
above millikelvin temperatures. Our results establish graphene JJs as
promising candidates for cryogenic THz quantum sensing. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1530-6984
- VL26
- BP7435
- EP7442
- DI10.1021/acs.nanolett.6c01483
- UTWOS:001776257400001
- ER
- EF
|
Nikolaev, Konstantin G; Ivanov, Artemii; Wen, Han; Wang, Qian; Kravtsov, Mikhail; Bandurin, Denis A; Karim, Nazmul; Novoselov, Kostya S; Andreeva, Daria V One-Spot Synthesized Crystalline Graphene/PANI for Wearable Ionic
Transistor Textiles SMALL STRUCTURES, 7 (4), 2026, DOI: 10.1002/sstr.202500904. Abstract | BibTeX | Endnote @article{WOS:001751311800005,
title = {One-Spot Synthesized Crystalline Graphene/PANI for Wearable Ionic
Transistor Textiles},
author = {Konstantin G Nikolaev and Artemii Ivanov and Han Wen and Qian Wang and Mikhail Kravtsov and Denis A Bandurin and Nazmul Karim and Kostya S Novoselov and Daria V Andreeva},
doi = {10.1002/sstr.202500904},
times_cited = {1},
year = {2026},
date = {2026-04-01},
journal = {SMALL STRUCTURES},
volume = {7},
number = {4},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Here, we report a one-spot, temperature-controlled AC
electropolymerization strategy for converting graphene oxide and aniline
into a crystalline, processable reduced graphene oxide (rGO)/polyaniline
(PANI) composite for wearable ionic transistor textiles. By tuning the
electropolymerization temperature from 4 degrees C to 55 degrees C under
a low-frequency triangular AC waveform, followed by mild postreduction,
conformal polycrystalline PANI nanodomains are grown directly on rGO
sheets. Low-temperature synthesis yields the highest structural ordering
and the lowest fraction of protonated imine species, directly linking
growth conditions to mixed ionic-electronic transport behavior. The
resulting rGO/PANI composite functions as an electrolyte-gated
transistor with stable operation and amplified gate response.
Furthermore, the composite can be stencil printed onto cotton textiles
to realize ratiometric Na+/K+ sensing at constant ionic strength,
highlighting its potential for scalable, wearable ion-sensing
architectures.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Here, we report a one-spot, temperature-controlled AC
electropolymerization strategy for converting graphene oxide and aniline
into a crystalline, processable reduced graphene oxide (rGO)/polyaniline
(PANI) composite for wearable ionic transistor textiles. By tuning the
electropolymerization temperature from 4 degrees C to 55 degrees C under
a low-frequency triangular AC waveform, followed by mild postreduction,
conformal polycrystalline PANI nanodomains are grown directly on rGO
sheets. Low-temperature synthesis yields the highest structural ordering
and the lowest fraction of protonated imine species, directly linking
growth conditions to mixed ionic-electronic transport behavior. The
resulting rGO/PANI composite functions as an electrolyte-gated
transistor with stable operation and amplified gate response.
Furthermore, the composite can be stencil printed onto cotton textiles
to realize ratiometric Na+/K+ sensing at constant ionic strength,
highlighting its potential for scalable, wearable ion-sensing
architectures. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFKonstantin G Nikolaev
Artemii Ivanov
Han Wen
Qian Wang
Mikhail Kravtsov
Denis A Bandurin
Nazmul Karim
Kostya S Novoselov
Daria V Andreeva
- TIOne-Spot Synthesized Crystalline Graphene/PANI for Wearable Ionic
Transistor Textiles - SOSMALL STRUCTURES
- DTArticle
- ABHere, we report a one-spot, temperature-controlled AC
electropolymerization strategy for converting graphene oxide and aniline
into a crystalline, processable reduced graphene oxide (rGO)/polyaniline
(PANI) composite for wearable ionic transistor textiles. By tuning the
electropolymerization temperature from 4 degrees C to 55 degrees C under
a low-frequency triangular AC waveform, followed by mild postreduction,
conformal polycrystalline PANI nanodomains are grown directly on rGO
sheets. Low-temperature synthesis yields the highest structural ordering
and the lowest fraction of protonated imine species, directly linking
growth conditions to mixed ionic-electronic transport behavior. The
resulting rGO/PANI composite functions as an electrolyte-gated
transistor with stable operation and amplified gate response.
Furthermore, the composite can be stencil printed onto cotton textiles
to realize ratiometric Na+/K+ sensing at constant ionic strength,
highlighting its potential for scalable, wearable ion-sensing
architectures. - Z91
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- VL7
- DI10.1002/sstr.202500904
- UTWOS:001751311800005
- ER
- EF
|
