2025
|
Mylnikov, Dmitry A; Safonov, Ilya V; Kashchenko, Mikhail A; Novoselov, Kostya S; Bandurin, Denis A; Chernov, Alexander I; Svintsov, Dmitry A Hysteresis-controlled Van der Waals tunneling infrared detector enabled
by selective layer heating NPJ 2D MATERIALS AND APPLICATIONS, 9 (1), 2025, DOI: 10.1038/s41699-025-00612-x. Abstract | BibTeX | Endnote @article{WOS:001613817900003,
title = {Hysteresis-controlled Van der Waals tunneling infrared detector enabled
by selective layer heating},
author = {Dmitry A Mylnikov and Ilya V Safonov and Mikhail A Kashchenko and Kostya S Novoselov and Denis A Bandurin and Alexander I Chernov and Dmitry A Svintsov},
doi = {10.1038/s41699-025-00612-x},
times_cited = {0},
year = {2025},
date = {2025-11-01},
journal = {NPJ 2D MATERIALS AND APPLICATIONS},
volume = {9},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Mid-infrared (mid-IR) photodetectors play a crucial role in various
applications, including the development of biomimetic vision systems
that emulate neuronal function. In this work, we demonstrate a new
infrared photodetector based on graphene/boron nitride/graphene
tunneling heterostructure combining perception and memory functions. The
detection principle is based on the shift of the N-shaped tunneling
resonant feature in the I-V-curve upon infrared illumination. In the
current-biased mode, such a shift results in a strong voltage ``jump''
(0.05-1 V) to another branch of the I-V-characteristic that persists
after switching the radiation off. As a result, the structure can be
considered as a visual neuron that combines perception and memory
functions. More interestingly, the direction of voltage switching
depends on laser beam position, adding extra recognition functionality
to our perception device. The observed phenomena are explained within
the theory of selective light-induced heating of electrons in the
graphene layers, and the tunneling of hot carriers.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Mid-infrared (mid-IR) photodetectors play a crucial role in various
applications, including the development of biomimetic vision systems
that emulate neuronal function. In this work, we demonstrate a new
infrared photodetector based on graphene/boron nitride/graphene
tunneling heterostructure combining perception and memory functions. The
detection principle is based on the shift of the N-shaped tunneling
resonant feature in the I-V-curve upon infrared illumination. In the
current-biased mode, such a shift results in a strong voltage ``jump''
(0.05-1 V) to another branch of the I-V-characteristic that persists
after switching the radiation off. As a result, the structure can be
considered as a visual neuron that combines perception and memory
functions. More interestingly, the direction of voltage switching
depends on laser beam position, adding extra recognition functionality
to our perception device. The observed phenomena are explained within
the theory of selective light-induced heating of electrons in the
graphene layers, and the tunneling of hot carriers. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFDmitry A Mylnikov
Ilya V Safonov
Mikhail A Kashchenko
Kostya S Novoselov
Denis A Bandurin
Alexander I Chernov
Dmitry A Svintsov
- TIHysteresis-controlled Van der Waals tunneling infrared detector enabled
by selective layer heating - SONPJ 2D MATERIALS AND APPLICATIONS
- DTArticle
- ABMid-infrared (mid-IR) photodetectors play a crucial role in various
applications, including the development of biomimetic vision systems
that emulate neuronal function. In this work, we demonstrate a new
infrared photodetector based on graphene/boron nitride/graphene
tunneling heterostructure combining perception and memory functions. The
detection principle is based on the shift of the N-shaped tunneling
resonant feature in the I-V-curve upon infrared illumination. In the
current-biased mode, such a shift results in a strong voltage ``jump''
(0.05-1 V) to another branch of the I-V-characteristic that persists
after switching the radiation off. As a result, the structure can be
considered as a visual neuron that combines perception and memory
functions. More interestingly, the direction of voltage switching
depends on laser beam position, adding extra recognition functionality
to our perception device. The observed phenomena are explained within
the theory of selective light-induced heating of electrons in the
graphene layers, and the tunneling of hot carriers. - Z90
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- VL9
- DI10.1038/s41699-025-00612-x
- UTWOS:001613817900003
- ER
- EF
|
Kudriashov, A; Hovhannisyan, R A; Zhou, X; Elesin, L; Yashina, L V; Novoselov, K S; Bandurin, D A Reconstructing critical current density in Josephson junctions with
phase nonlinearity PHYSICAL REVIEW B, 112 (6), 2025, DOI: 10.1103/lgpj-wy72. Abstract | BibTeX | Endnote @article{WOS:001553737700001,
title = {Reconstructing critical current density in Josephson junctions with
phase nonlinearity},
author = {A Kudriashov and R A Hovhannisyan and X Zhou and L Elesin and L V Yashina and K S Novoselov and D A Bandurin},
doi = {10.1103/lgpj-wy72},
times_cited = {1},
issn = {2469-9950},
year = {2025},
date = {2025-08-01},
journal = {PHYSICAL REVIEW B},
volume = {112},
number = {6},
publisher = {AMER PHYSICAL SOC},
address = {ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA},
abstract = {In this Letter, we show that the standard Dynes-Fulton analysis,
commonly used to reconstruct the critical current density from
interference patterns, breaks down in Josephson junctions with nonlinear
phase distributions, leading to nonphysical artifacts. To address this,
we developed a simple iterative reconstruction algorithm and validated
it both numerically and experimentally using a planar Josephson junction
model. Unlike conventional approaches based on the logarithmic Hilbert
transform, the proposed method allows for incorporating prior knowledge
about the system and addresses the fundamental issue of ambiguity in
reconstructing the critical current density from interference patterns.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
In this Letter, we show that the standard Dynes-Fulton analysis,
commonly used to reconstruct the critical current density from
interference patterns, breaks down in Josephson junctions with nonlinear
phase distributions, leading to nonphysical artifacts. To address this,
we developed a simple iterative reconstruction algorithm and validated
it both numerically and experimentally using a planar Josephson junction
model. Unlike conventional approaches based on the logarithmic Hilbert
transform, the proposed method allows for incorporating prior knowledge
about the system and addresses the fundamental issue of ambiguity in
reconstructing the critical current density from interference patterns. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFA Kudriashov
R A Hovhannisyan
X Zhou
L Elesin
L V Yashina
K S Novoselov
D A Bandurin
- TIReconstructing critical current density in Josephson junctions with
phase nonlinearity - SOPHYSICAL REVIEW B
- DTArticle
- ABIn this Letter, we show that the standard Dynes-Fulton analysis,
commonly used to reconstruct the critical current density from
interference patterns, breaks down in Josephson junctions with nonlinear
phase distributions, leading to nonphysical artifacts. To address this,
we developed a simple iterative reconstruction algorithm and validated
it both numerically and experimentally using a planar Josephson junction
model. Unlike conventional approaches based on the logarithmic Hilbert
transform, the proposed method allows for incorporating prior knowledge
about the system and addresses the fundamental issue of ambiguity in
reconstructing the critical current density from interference patterns. - Z91
- PUAMER PHYSICAL SOC
- PAONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
- SN2469-9950
- VL112
- DI10.1103/lgpj-wy72
- UTWOS:001553737700001
- ER
- EF
|
Kudriashov, Andrei; Zhou, Xiangyu; Hovhannisyan, Razmik A; Frolov, Alexander S; Elesin, Leonid; Wang, Yi Bo; Zharkova, Ekaterina V; Taniguchi, Takashi; Watanabe, Kenji; Liu, Zheng; Novoselov, Kostya S; Yashina, Lada V; Zhou, Xin; Bandurin, Denis A Non-Majorana origin of anomalous current-phase relation and Josephson
diode effect in Bi2SE3/NbSe2 Josephson
junctions SCIENCE ADVANCES, 11 (24), 2025, DOI: 10.1126/sciadv.adw6925. Abstract | BibTeX | Endnote @article{WOS:001508114400008,
title = {Non-Majorana origin of anomalous current-phase relation and Josephson
diode effect in Bi2SE3/NbSe2 Josephson
junctions},
author = {Andrei Kudriashov and Xiangyu Zhou and Razmik A Hovhannisyan and Alexander S Frolov and Leonid Elesin and Yi Bo Wang and Ekaterina V Zharkova and Takashi Taniguchi and Kenji Watanabe and Zheng Liu and Kostya S Novoselov and Lada V Yashina and Xin Zhou and Denis A Bandurin},
doi = {10.1126/sciadv.adw6925},
times_cited = {3},
year = {2025},
date = {2025-06-01},
journal = {SCIENCE ADVANCES},
volume = {11},
number = {24},
publisher = {AMER ASSOC ADVANCEMENT SCIENCE},
address = {1200 NEW YORK AVE, NW, WASHINGTON, DC 20005 USA},
abstract = {Josephson junctions (JJs) are key to superconducting quantum
technologies and the search for self-conjugate quasiparticles
potentially useful for fault-tolerant quantum computing. In topological
insulator (TI)-based JJs, measuring the current-phase relation (CPR) can
reveal unconventional effects such as Majorana bound states (MBS) and
nonreciprocal transport. However, reconstructing CPR as a function of
magnetic field has not been attempted. Here, we present a platform for
field-dependent CPR measurements in planar JJs made of NbSe2 and
few-layer Bi2Se3. When a flux quantum Phi 0 threads the junction, we
observe anomalous peak-dip CPR structure and nonreciprocal supercurrent
flow. We show that these arise from a nonuniform supercurrent
distribution that also leads to a robust and tunable Josephson diode
effect. Furthermore, despite numerous previous studies, we find no
evidence of MBS. Our results establish magnetic field-dependent CPR as a
powerful probe of TI-based superconducting devices and offer design
strategies for nonreciprocal superconducting electronics.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Josephson junctions (JJs) are key to superconducting quantum
technologies and the search for self-conjugate quasiparticles
potentially useful for fault-tolerant quantum computing. In topological
insulator (TI)-based JJs, measuring the current-phase relation (CPR) can
reveal unconventional effects such as Majorana bound states (MBS) and
nonreciprocal transport. However, reconstructing CPR as a function of
magnetic field has not been attempted. Here, we present a platform for
field-dependent CPR measurements in planar JJs made of NbSe2 and
few-layer Bi2Se3. When a flux quantum Phi 0 threads the junction, we
observe anomalous peak-dip CPR structure and nonreciprocal supercurrent
flow. We show that these arise from a nonuniform supercurrent
distribution that also leads to a robust and tunable Josephson diode
effect. Furthermore, despite numerous previous studies, we find no
evidence of MBS. Our results establish magnetic field-dependent CPR as a
powerful probe of TI-based superconducting devices and offer design
strategies for nonreciprocal superconducting electronics. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFAndrei Kudriashov
Xiangyu Zhou
Razmik A Hovhannisyan
Alexander S Frolov
Leonid Elesin
Yi Bo Wang
Ekaterina V Zharkova
Takashi Taniguchi
Kenji Watanabe
Zheng Liu
Kostya S Novoselov
Lada V Yashina
Xin Zhou
Denis A Bandurin
- TINon-Majorana origin of anomalous current-phase relation and Josephson
diode effect in Bi2SE3/NbSe2 Josephson
junctions - SOSCIENCE ADVANCES
- DTArticle
- ABJosephson junctions (JJs) are key to superconducting quantum
technologies and the search for self-conjugate quasiparticles
potentially useful for fault-tolerant quantum computing. In topological
insulator (TI)-based JJs, measuring the current-phase relation (CPR) can
reveal unconventional effects such as Majorana bound states (MBS) and
nonreciprocal transport. However, reconstructing CPR as a function of
magnetic field has not been attempted. Here, we present a platform for
field-dependent CPR measurements in planar JJs made of NbSe2 and
few-layer Bi2Se3. When a flux quantum Phi 0 threads the junction, we
observe anomalous peak-dip CPR structure and nonreciprocal supercurrent
flow. We show that these arise from a nonuniform supercurrent
distribution that also leads to a robust and tunable Josephson diode
effect. Furthermore, despite numerous previous studies, we find no
evidence of MBS. Our results establish magnetic field-dependent CPR as a
powerful probe of TI-based superconducting devices and offer design
strategies for nonreciprocal superconducting electronics. - Z93
- PUAMER ASSOC ADVANCEMENT SCIENCE
- PA1200 NEW YORK AVE, NW, WASHINGTON, DC 20005 USA
- VL11
- DI10.1126/sciadv.adw6925
- UTWOS:001508114400008
- ER
- EF
|
Titova, Elena I; Kashchenko, Mikhail A; Miakonkikh, Andrey V; Morozov, Alexander D; Shabanov, Alexander V; Domaratskiy, Ivan K; Zhukov, Sergey S; Mylnikov, Dmitry A; Rumyantsev, Vladimir V; Morozov, Sergey V; Novoselov, Kostya S; Bandurin, Denis A; Svintsov, Dmitry A Non-Saturated Performance Scaling of Graphene Bilayer Sub-Terahertz
Detectors at Large Induced Bandgap ADVANCED OPTICAL MATERIALS, 13 (16), 2025, DOI: 10.1002/adom.202500167. Abstract | BibTeX | Endnote @article{WOS:001467966600001,
title = {Non-Saturated Performance Scaling of Graphene Bilayer Sub-Terahertz
Detectors at Large Induced Bandgap},
author = {Elena I Titova and Mikhail A Kashchenko and Andrey V Miakonkikh and Alexander D Morozov and Alexander V Shabanov and Ivan K Domaratskiy and Sergey S Zhukov and Dmitry A Mylnikov and Vladimir V Rumyantsev and Sergey V Morozov and Kostya S Novoselov and Denis A Bandurin and Dmitry A Svintsov},
doi = {10.1002/adom.202500167},
times_cited = {0},
issn = {2195-1071},
year = {2025},
date = {2025-06-01},
journal = {ADVANCED OPTICAL MATERIALS},
volume = {13},
number = {16},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Electrically induced p - n junctions in graphene bilayer have shown
superior performance for detection of sub-terahertz radiation at
cryogenic temperatures, especially upon electrical induction of the
bandgap Eg. Still, the upper limits of responsivity and noise equivalent
power (NEP) at very large Eg remained unknown. Here, the cryogenic performance of graphene bilayer detectors at f = 0.13 THz is studied by
inducing gaps up to Eg approximate to 90 meV, a value close to the
limits observed in recent transport experiments. High value of the gap
is achieved by using high-kappa bottom hafnium dioxide gate dielectric.
The voltage responsivity, current responsivity, and NEP optimized with
respect to doping do not demonstrate saturation with gap induction up to
its maximum values. The NEP demonstrates an order-of-magnitude drop from
approximate to 400 fWHz-1/2 in the gapless state to approximate to 20
fWHz-1/2 at the largest gap. At largest induced bandgaps, plasmonic
oscillations of responsivity become visible and important for
optimization of sub-THz response.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Electrically induced p - n junctions in graphene bilayer have shown
superior performance for detection of sub-terahertz radiation at
cryogenic temperatures, especially upon electrical induction of the
bandgap Eg. Still, the upper limits of responsivity and noise equivalent
power (NEP) at very large Eg remained unknown. Here, the cryogenic performance of graphene bilayer detectors at f = 0.13 THz is studied by
inducing gaps up to Eg approximate to 90 meV, a value close to the
limits observed in recent transport experiments. High value of the gap
is achieved by using high-kappa bottom hafnium dioxide gate dielectric.
The voltage responsivity, current responsivity, and NEP optimized with
respect to doping do not demonstrate saturation with gap induction up to
its maximum values. The NEP demonstrates an order-of-magnitude drop from
approximate to 400 fWHz-1/2 in the gapless state to approximate to 20
fWHz-1/2 at the largest gap. At largest induced bandgaps, plasmonic
oscillations of responsivity become visible and important for
optimization of sub-THz response. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFElena I Titova
Mikhail A Kashchenko
Andrey V Miakonkikh
Alexander D Morozov
Alexander V Shabanov
Ivan K Domaratskiy
Sergey S Zhukov
Dmitry A Mylnikov
Vladimir V Rumyantsev
Sergey V Morozov
Kostya S Novoselov
Denis A Bandurin
Dmitry A Svintsov
- TINon-Saturated Performance Scaling of Graphene Bilayer Sub-Terahertz
Detectors at Large Induced Bandgap - SOADVANCED OPTICAL MATERIALS
- DTArticle
- ABElectrically induced p - n junctions in graphene bilayer have shown
superior performance for detection of sub-terahertz radiation at
cryogenic temperatures, especially upon electrical induction of the
bandgap Eg. Still, the upper limits of responsivity and noise equivalent
power (NEP) at very large Eg remained unknown. Here, the cryogenic performance of graphene bilayer detectors at f = 0.13 THz is studied by
inducing gaps up to Eg approximate to 90 meV, a value close to the
limits observed in recent transport experiments. High value of the gap
is achieved by using high-kappa bottom hafnium dioxide gate dielectric.
The voltage responsivity, current responsivity, and NEP optimized with
respect to doping do not demonstrate saturation with gap induction up to
its maximum values. The NEP demonstrates an order-of-magnitude drop from
approximate to 400 fWHz-1/2 in the gapless state to approximate to 20
fWHz-1/2 at the largest gap. At largest induced bandgaps, plasmonic
oscillations of responsivity become visible and important for
optimization of sub-THz response. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN2195-1071
- VL13
- DI10.1002/adom.202500167
- UTWOS:001467966600001
- ER
- EF
|
Kravtsov, M; Shilov, A L; Yang, Y; Pryadilin, T; Kashchenko, M A; Popova, O; Titova, M; Voropaev, D; Wang, Y; Shein, K; Gayduchenko, I; Goltsman, G N; Lukianov, M; Kudriashov, A; Taniguchi, T; Watanabe, K; Svintsov, D A; Adam, S; Novoselov, K S; Principi, A; Bandurin, D A Viscous terahertz photoconductivity of hydrodynamic electrons in
graphene NATURE NANOTECHNOLOGY, 20 (1), pp. 51+, 2025, DOI: 10.1038/s41565-024-01795-y. Abstract | BibTeX | Endnote @article{WOS:001330508900002,
title = {Viscous terahertz photoconductivity of hydrodynamic electrons in
graphene},
author = {M Kravtsov and A L Shilov and Y Yang and T Pryadilin and M A Kashchenko and O Popova and M Titova and D Voropaev and Y Wang and K Shein and I Gayduchenko and G N Goltsman and M Lukianov and A Kudriashov and T Taniguchi and K Watanabe and D A Svintsov and S Adam and K S Novoselov and A Principi and D A Bandurin},
doi = {10.1038/s41565-024-01795-y},
times_cited = {8},
issn = {1748-3387},
year = {2025},
date = {2025-01-01},
journal = {NATURE NANOTECHNOLOGY},
volume = {20},
number = {1},
pages = {51+},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Light incident upon materials can induce changes in their electrical
conductivity, a phenomenon referred to as photoresistance. In
semiconductors, the photoresistance is negative, as light-induced
promotion of electrons across the bandgap enhances the number of charge
carriers participating in transport. In superconductors and normal
metals, the photoresistance is positive because of the destruction of
the superconducting state and enhanced momentum-relaxing scattering,
respectively. Here we report a qualitative deviation from the standard
behaviour in doped metallic graphene. We show that Dirac electrons
exposed to continuous-wave terahertz (THz) radiation can be thermally
decoupled from the lattice, which activates hydrodynamic electron
transport. In this regime, the resistance of graphene constrictions
experiences a decrease caused by the THz-driven superballistic flow of
correlated electrons. We analyse the dependencies of the negative
photoresistance on the carrier density, and the radiation power, and
show that our superballistic devices operate as sensitive phonon-cooled
bolometers and can thus offer, in principle, a picosecond-scale response
time. Beyond their fundamental implications, our findings underscore the
practicality of electron hydrodynamics in designing ultra-fast THz
sensors and electron thermometers.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Light incident upon materials can induce changes in their electrical
conductivity, a phenomenon referred to as photoresistance. In
semiconductors, the photoresistance is negative, as light-induced
promotion of electrons across the bandgap enhances the number of charge
carriers participating in transport. In superconductors and normal
metals, the photoresistance is positive because of the destruction of
the superconducting state and enhanced momentum-relaxing scattering,
respectively. Here we report a qualitative deviation from the standard
behaviour in doped metallic graphene. We show that Dirac electrons
exposed to continuous-wave terahertz (THz) radiation can be thermally
decoupled from the lattice, which activates hydrodynamic electron
transport. In this regime, the resistance of graphene constrictions
experiences a decrease caused by the THz-driven superballistic flow of
correlated electrons. We analyse the dependencies of the negative
photoresistance on the carrier density, and the radiation power, and
show that our superballistic devices operate as sensitive phonon-cooled
bolometers and can thus offer, in principle, a picosecond-scale response
time. Beyond their fundamental implications, our findings underscore the
practicality of electron hydrodynamics in designing ultra-fast THz
sensors and electron thermometers. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFM Kravtsov
A L Shilov
Y Yang
T Pryadilin
M A Kashchenko
O Popova
M Titova
D Voropaev
Y Wang
K Shein
I Gayduchenko
G N Goltsman
M Lukianov
A Kudriashov
T Taniguchi
K Watanabe
D A Svintsov
S Adam
K S Novoselov
A Principi
D A Bandurin
- TIViscous terahertz photoconductivity of hydrodynamic electrons in
graphene - SONATURE NANOTECHNOLOGY
- DTArticle
- ABLight incident upon materials can induce changes in their electrical
conductivity, a phenomenon referred to as photoresistance. In
semiconductors, the photoresistance is negative, as light-induced
promotion of electrons across the bandgap enhances the number of charge
carriers participating in transport. In superconductors and normal
metals, the photoresistance is positive because of the destruction of
the superconducting state and enhanced momentum-relaxing scattering,
respectively. Here we report a qualitative deviation from the standard
behaviour in doped metallic graphene. We show that Dirac electrons
exposed to continuous-wave terahertz (THz) radiation can be thermally
decoupled from the lattice, which activates hydrodynamic electron
transport. In this regime, the resistance of graphene constrictions
experiences a decrease caused by the THz-driven superballistic flow of
correlated electrons. We analyse the dependencies of the negative
photoresistance on the carrier density, and the radiation power, and
show that our superballistic devices operate as sensitive phonon-cooled
bolometers and can thus offer, in principle, a picosecond-scale response
time. Beyond their fundamental implications, our findings underscore the
practicality of electron hydrodynamics in designing ultra-fast THz
sensors and electron thermometers. - Z98
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- SN1748-3387
- VL20
- BP51+
- EP
- DI10.1038/s41565-024-01795-y
- UTWOS:001330508900002
- ER
- EF
|
