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@article{WOS:001809028100001,
title = {Quantum tunnelling and leakage current across two-dimensional materials},
author = {Yue Yuan and Francesco Maria Puglisi and Andrea Padovani and Christoph Reuter and Tingting Han and Daria Belotcerkovtceva and Iakov Reznikov and Alexey Berdyugin and Yaqing Shen and Mahdi Pourfath and Theresia Knobloch and Marco A Villena and Lukas Volkel and Max C Lemme and Tibor Grasser and Deji Akinwande and Mario Lanza},
doi = {10.1038/s41563-026-02650-2},
times_cited = {1},
issn = {1476-1122},
year = {2026},
date = {2026-07-01},
journal = {NATURE MATERIALS},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Leakage current is a physical phenomenon that critically affects the
operation and reliability of mainstream electronic devices and
heterostructures for diverse applications. Two-dimensional materials are
being integrated into the structure of ultrascaled electronic devices,
but the leakage current across them is still not well understood. Here
we analyse the leakage current across hexagonal boron nitride (hBN),
molybdenum disulfide and tungsten disulfide of different thicknesses,
and compare it with industrial-quality SiO2/n++Si samples. The samples
are analysed at the nanoscale and at the device level, and the
experimental data are complemented with computational modelling assisted
by technology computer-aided design and density functional theory.
First, we demonstrate that the surface roughness of the bottom electrode
dramatically alters the leakage current when an electric field is
applied. Second, we show that in multilayer two-dimensional materials,
the energy bandgap and density of atomic defects are key factors that
determine the leakage current; however, in monolayer two-dimensional
materials, the leakage current is mainly determined by sample thickness,
understood as the electrode-to-electrode distance. Consequently, leakage
current across monolayer hBN is higher than that across monolayer
molybdenum disulfide and tungsten disulfide despite hBN having a bandgap
nearly three times larger, due to its approximately 50% lower
thickness. Third, we establish an equivalence (in terms of leakage
current) between hBN and SiO2 films of different thicknesses, which can
be used to predict the performance and reliability of
two-dimensional-material-based nano-electronic devices, such as
transistors and memristors.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{WOS:001568907800004,
title = {Sub-10 nm oxidation and etching of graphite using field emission
scanning Probe lithography},
author = {Christoph Reuter and Steffen Strehle},
doi = {10.1016/j.carbon.2025.120779},
times_cited = {3},
issn = {0008-6223},
year = {2025},
date = {2025-10-01},
journal = {CARBON},
volume = {245},
publisher = {PERGAMON-ELSEVIER SCIENCE LTD},
address = {THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND},
abstract = {We employ an atomic force microscope operated under ambient conditions
for a resist-free patterning of HOPG and exfoliated graphite nanosheets.
The nano-structuring is realized through an electrochemical surface
oxidation induced by low-energy electrons field emitted from the tip of
an AFM cantilever in close proximity to the sample surface. Unlike
previous approaches, we positioned the cantilever tip several tens of
nanometers above the surface-adsorbed water layer, rather than within
it, making the beam diameter of the field emitted electrons the limiting
factor for the achievable patterning resolution. This approach enabled
the growth of non-volatile oxide species as well as a direct etching of
material with resolutions well below 10 nm under ambient conditions. The
tip-written structures were subsequently analysed using Raman
spectroscopy and conductive AFM measurement.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}