2024
|
Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Chen, Zhaolong; Kashchenko, Mikhail; Lin, Li; Olsen, Thomas; Li, Jing; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, Castro A H; Novoselov, Kostya S; Lu, Jiong Evidence for electron-hole crystals in a Mott insulator NATURE MATERIALS, 2024, DOI: 10.1038/s41563-024-01910-3. Abstract | BibTeX | Endnote @article{ISI:001237790900002,
title = {Evidence for electron-hole crystals in a Mott insulator},
author = {Zhizhan Qiu and Yixuan Han and Keian Noori and Zhaolong Chen and Mikhail Kashchenko and Li Lin and Thomas Olsen and Jing Li and Hanyan Fang and Pin Lyu and Mykola Telychko and Xingyu Gu and Shaffique Adam and Su Ying Quek and Aleksandr Rodin and Castro A H Neto and Kostya S Novoselov and Jiong Lu},
doi = {10.1038/s41563-024-01910-3},
times_cited = {0},
issn = {1476-1122},
year = {2024},
date = {2024-06-03},
journal = {NATURE MATERIALS},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUQiu, ZZ
Han, YX
Noori, K
Chen, ZL
Kashchenko, M
Lin, L
Olsen, T
Li, J
Fang, HY
Lyu, P
Telychko, M
Gu, XY
Adam, S
Quek, SY
Rodin, A
Neto, AHC
Novoselov, KS
Lu, J
- AFZhizhan Qiu
Yixuan Han
Keian Noori
Zhaolong Chen
Mikhail Kashchenko
Li Lin
Thomas Olsen
Jing Li
Hanyan Fang
Pin Lyu
Mykola Telychko
Xingyu Gu
Shaffique Adam
Su Ying Quek
Aleksandr Rodin
Castro A H Neto
Kostya S Novoselov
Jiong Lu
- TIEvidence for electron-hole crystals in a Mott insulator
- SONATURE MATERIALS
- LAEnglish
- DTArticle
- IDWIGNER CRYSTAL
- ABThe coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.
- C1[Qiu, Zhizhan; Noori, Keian; Chen, Zhaolong; Lin, Li; Neto, A. H. Castro; Novoselov, Kostya S.; Lu, Jiong] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore.
[Han, Yixuan; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Lu, Jiong] Natl Univ Singapore, Dept Chem, Singapore, Singapore.
[Noori, Keian; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, A. H. Castro; Lu, Jiong] Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore, Singapore.
[Chen, Zhaolong] Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen, Peoples R China.
[Kashchenko, Mikhail] Brain & Consciousness Res Ctr, Programmable Funct Mat Lab, Moscow, Russia.
[Kashchenko, Mikhail] Moscow Inst Phys & Technol, Ctr Photon & Mat 2D, Dolgoprudnyi 141700, Russia.
[Lin, Li] Peking Univ, Sch Mat Sci & Engn, Beijing, Peoples R China.
[Olsen, Thomas] Tech Univ Denmark, Dept Phys, CAMD, Lyngby, Denmark.
[Li, Jing] Beihang Univ, Sch Chem, Beijing, Peoples R China.
[Gu, Xingyu; Adam, Shaffique; Quek, Su Ying] Natl Univ Singapore, Dept Phys, Singapore, Singapore.
[Adam, Shaffique; Rodin, Aleksandr] Yale NUS Coll, Singapore, Singapore.
[Adam, Shaffique; Quek, Su Ying; Neto, A. H. Castro; Novoselov, Kostya S.] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore.
[Quek, Su Ying] Natl Univ Singapore, NUS Grad Sch, Integrat Sci & Engn Programme, Singapore, Singapore - C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; Peking University; Moscow Institute of Physics & Technology; Peking University; Technical University of Denmark; Beihang University; National University of Singapore; Yale NUS College; National University of Singapore; National University of Singapore
- RPNovoselov, KS (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Dept Chem, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D CA2DM, Singapore, Singapore; Novoselov, KS (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore, Singapore
- FUMinistry of Education - Singapore (MOE) [MOE-T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004]; Ministry of Education [M21K2c0113]; Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant [EDUNC-33-18-279-V12]; Ministry of Education, Singapore (Research Centre of Excellence award) [RSRPR190000]; Royal Society, UK [21-79-20225]; Russian Science Foundation
- FXJ. Lu acknowledges support from Ministry of Education grants (MOE-T2EP50121-0008, MOE-T2EP10221-0005, MOE-T2EP10123-0004) and Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant (M21K2c0113). K.S.N. acknowledges support from the Ministry of Education, Singapore (Research Centre of Excellence award to the Institute for Functional Intelligent Materials (I-FIM) project no. EDUNC-33-18-279-V12), and the Royal Society, UK (grant no. RSRPR190000). M.K. acknowledges support from the Russian Science Foundation (grant no. 21-79-20225) and Vladimir Potanin (through Brain and Consciousness Research Center).
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- PUNATURE PORTFOLIO
- PIBERLIN
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- SN1476-1122
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- JINat. Mater.
- PDJUN 3
- PY2024
- DI10.1038/s41563-024-01910-3
- PG11
- WCChemistry, Physical; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
- SCChemistry; Materials Science; Physics
- GASX6P9
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- ER
- EF
|
Negi, Suchit; Carvalho, Alexandra; Neto, Castro A H Theoretical study of defect-mediated ionic transport in Li, Na, and K β and β" aluminas PHYSICAL REVIEW B, 109 (13), 2024, DOI: 10.1103/PhysRevB.109.134105. Abstract | BibTeX | Endnote @article{ISI:001229669600001,
title = {Theoretical study of defect-mediated ionic transport in Li, Na, and K β and β" aluminas},
author = {Suchit Negi and Alexandra Carvalho and Castro A H Neto},
doi = {10.1103/PhysRevB.109.134105},
times_cited = {0},
issn = {2469-9950},
year = {2024},
date = {2024-04-11},
journal = {PHYSICAL REVIEW B},
volume = {109},
number = {13},
publisher = {AMER PHYSICAL SOC},
address = {ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA},
abstract = {Alkali-metal beta/beta '' aluminas are among the fastest ionic conductors, yet little is understood about the role of defects in the ion transport mechanism. Here, we use density functional theory (DFT) to investigate the crystal structures of the beta and beta '' phases and their vacancy and interstitial defects. We find that charge transport is likely to be dominated by alkali-metal interstitials in beta aluminas and by vacancies in beta '' aluminas. Lower bounds for the activation energy for diffusion are found by determining the minimum-energy paths for defect migration. The resulting migration barriers are lower than the experimental activation energies for conduction in Na beta and beta '' aluminas, suggesting a latent potential for optimization. The lowest activation energy of about 20 meV is predicted for correlated vacancy migration in K beta '' alumina.},
keywords = {},
pubstate = {published},
tppubtype = {article}
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Alkali-metal beta/beta '' aluminas are among the fastest ionic conductors, yet little is understood about the role of defects in the ion transport mechanism. Here, we use density functional theory (DFT) to investigate the crystal structures of the beta and beta '' phases and their vacancy and interstitial defects. We find that charge transport is likely to be dominated by alkali-metal interstitials in beta aluminas and by vacancies in beta '' aluminas. Lower bounds for the activation energy for diffusion are found by determining the minimum-energy paths for defect migration. The resulting migration barriers are lower than the experimental activation energies for conduction in Na beta and beta '' aluminas, suggesting a latent potential for optimization. The lowest activation energy of about 20 meV is predicted for correlated vacancy migration in K beta '' alumina. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUNegi, S
Carvalho, A
Neto, AHC
- AFSuchit Negi
Alexandra Carvalho
Castro A H Neto
- TITheoretical study of defect-mediated ionic transport in Li, Na, and K β and β" aluminas
- SOPHYSICAL REVIEW B
- LAEnglish
- DTArticle
- IDSODIUM-BETA; SUPERIONIC PROPERTIES; CRYSTAL-STRUCTURE; RAMAN-SCATTERING; SINGLE-CRYSTAL; POINT-DEFECTS; HOST LATTICES; LITHIUM; CONDUCTIVITY; POTASSIUM
- ABAlkali-metal beta/beta '' aluminas are among the fastest ionic conductors, yet little is understood about the role of defects in the ion transport mechanism. Here, we use density functional theory (DFT) to investigate the crystal structures of the beta and beta '' phases and their vacancy and interstitial defects. We find that charge transport is likely to be dominated by alkali-metal interstitials in beta aluminas and by vacancies in beta '' aluminas. Lower bounds for the activation energy for diffusion are found by determining the minimum-energy paths for defect migration. The resulting migration barriers are lower than the experimental activation energies for conduction in Na beta and beta '' aluminas, suggesting a latent potential for optimization. The lowest activation energy of about 20 meV is predicted for correlated vacancy migration in K beta '' alumina.
- C3National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore
- RPCarvalho, A (corresponding author), Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117546, Singapore; Carvalho, A (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore
- FXThis research project is supported by the Ministry of Education, Singapore, under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials, National University of Singapore (I-FIM, project No. EDUNC-33-18-279-V12) . This work used computational re sources of the supercomputer Fugaku provided by RIKEN (Project ID: hp230186) ; the Centre of Advanced 2D Materials (CA2DM) , funded by the National Research Foundation, Prime Ministers Office, Singapore; and the Singapore National Supercomputing Centre (NSCC) .
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- PICOLLEGE PK
- PAONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
- SN2469-9950
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- JIPhys. Rev. B
- PDAPR 11
- PY2024
- VL109
- DI10.1103/PhysRevB.109.134105
- PG13
- WCMaterials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
- SCMaterials Science; Physics
- UTWOS:001229669600001
- ER
- EF
|
Tan, Hui Li; Donato, Katarzyna Z; Costa, Mariana C F; Carvalho, Alexandra; Trushin, Maxim; Ng, Pei Rou; Yau, Xin Hui; Koon, Gavin K W; Tolasz, Jakub; Nemeckova, Zuzana; Ecorchard, Petra; Donato, Ricardo K; Neto, Antonio Castro H Fibrillation of Pristine 2D Materials by 2D-Confined Electrolytes ADVANCED FUNCTIONAL MATERIALS, 2024, DOI: 10.1002/adfm.202315038. Abstract | BibTeX | Endnote @article{ISI:001186210500001,
title = {Fibrillation of Pristine 2D Materials by 2D-Confined Electrolytes},
author = {Hui Li Tan and Katarzyna Z Donato and Mariana C F Costa and Alexandra Carvalho and Maxim Trushin and Pei Rou Ng and Xin Hui Yau and Gavin K W Koon and Jakub Tolasz and Zuzana Nemeckova and Petra Ecorchard and Ricardo K Donato and Antonio Castro H Neto},
doi = {10.1002/adfm.202315038},
times_cited = {0},
issn = {1616-301X},
year = {2024},
date = {2024-03-18},
journal = {ADVANCED FUNCTIONAL MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {2D materials are solid microscopic flakes with a-few-Angstrom thickness possessing some of the largest surface-to-volume ratios known. Altering their conformation state from a flat flake to a scroll or fiber offers a synergistic association of properties arising from 2D and 1D nanomaterials. However, a combination of the long-range electrostatic and short-range solvation forces produces an interlayer repulsion that has to be overcome, making scrolling 2D materials without disrupting the pristine structure a challenging task. Herein, a facile method is presented to alter the 2D materials' inter-layer interactions by confining organic salts onto their basal area, forming 2D-confined electrolytes. The confined electrolytes produce local charge inhomogeneities, which can conjugate across the interlayer gap, binding the two surfaces. This allows the 2D-confined electrolytes to behave as polyelectrolytes within a higher dimensional order (2D -> 1D) and form robust nanofibers with distinct electronic properties. The method is not material-specific and the resulting fibers are tightly bound even though the crystal structure of the basal plane remains unaltered.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
2D materials are solid microscopic flakes with a-few-Angstrom thickness possessing some of the largest surface-to-volume ratios known. Altering their conformation state from a flat flake to a scroll or fiber offers a synergistic association of properties arising from 2D and 1D nanomaterials. However, a combination of the long-range electrostatic and short-range solvation forces produces an interlayer repulsion that has to be overcome, making scrolling 2D materials without disrupting the pristine structure a challenging task. Herein, a facile method is presented to alter the 2D materials' inter-layer interactions by confining organic salts onto their basal area, forming 2D-confined electrolytes. The confined electrolytes produce local charge inhomogeneities, which can conjugate across the interlayer gap, binding the two surfaces. This allows the 2D-confined electrolytes to behave as polyelectrolytes within a higher dimensional order (2D -> 1D) and form robust nanofibers with distinct electronic properties. The method is not material-specific and the resulting fibers are tightly bound even though the crystal structure of the basal plane remains unaltered. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUTan, HL
Donato, KZ
Costa, MCF
Carvalho, A
Trushin, M
Ng, PR
Yau, XH
Koon, GKW
Tolasz, J
Nemecková, Z
Ecorchard, P
Donato, RK
Neto, AHC
- AFHui Li Tan
Katarzyna Z Donato
Mariana C F Costa
Alexandra Carvalho
Maxim Trushin
Pei Rou Ng
Xin Hui Yau
Gavin K W Koon
Jakub Tolasz
Zuzana Nemeckova
Petra Ecorchard
Ricardo K Donato
Antonio Castro H Neto
- TIFibrillation of Pristine 2D Materials by 2D-Confined Electrolytes
- SOADVANCED FUNCTIONAL MATERIALS
- LAEnglish
- DTArticle
- DEBoron Nitride; Fiber; Graphene; MoS2; Scrolling; Self-assembly
- IDIONIC LIQUIDS; GRAPHENE OXIDE; NANOSCROLLS
- AB2D materials are solid microscopic flakes with a-few-Angstrom thickness possessing some of the largest surface-to-volume ratios known. Altering their conformation state from a flat flake to a scroll or fiber offers a synergistic association of properties arising from 2D and 1D nanomaterials. However, a combination of the long-range electrostatic and short-range solvation forces produces an interlayer repulsion that has to be overcome, making scrolling 2D materials without disrupting the pristine structure a challenging task. Herein, a facile method is presented to alter the 2D materials' inter-layer interactions by confining organic salts onto their basal area, forming 2D-confined electrolytes. The confined electrolytes produce local charge inhomogeneities, which can conjugate across the interlayer gap, binding the two surfaces. This allows the 2D-confined electrolytes to behave as polyelectrolytes within a higher dimensional order (2D -> 1D) and form robust nanofibers with distinct electronic properties. The method is not material-specific and the resulting fibers are tightly bound even though the crystal structure of the basal plane remains unaltered.
- C1[Tan, Hui Li; Donato, Katarzyna Z.; Costa, Mariana C. F.; Carvalho, Alexandra; Trushin, Maxim; Ng, Pei Rou; Yau, Xin Hui; Koon, Gavin K. W.; Donato, Ricardo K.; Neto, Antonio H. Castro] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore.
[Costa, Mariana C. F.; Trushin, Maxim; Neto, Antonio H. Castro] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore.
[Costa, Mariana C. F.; Carvalho, Alexandra; Trushin, Maxim; Ng, Pei Rou; Neto, Antonio H. Castro] Natl Univ Singapore, Inst Funct Intelligent Mat I FIM, Singapore 117544, Singapore.
[Tolasz, Jakub; Nemeckova, Zuzana; Ecorchard, Petra] Czech Acad Sci, Inst Inorgan Chem, Husinec Rez 1001, Rez 25068, Czech Republic - C3National University of Singapore; National University of Singapore; National University of Singapore; Czech Academy of Sciences; Institute of Inorganic Chemistry of the Czech Academy of Sciences
- RPDonato, RK (corresponding author), Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore; Neto, AHC (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore; Neto, AHC (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat I FIM, Singapore 117544, Singapore; Ecorchard, P (corresponding author), Czech Acad Sci, Inst Inorgan Chem, Husinec Rez 1001, Rez 25068, Czech Republic
- FUNational Research Foundation [CA2DM]; National Research Foundation, Prime Minister's Office, Singapore [EDUNC-33-18-279-V12]; Singapore Ministry of Education [22-05244S]; National University of Singapore [LM2023066]; National Supercomputing Centre, Singapore; Czech Science Foundation; Ministry of Education, Youth and Sports of the Czech Republic
- FXThis research, including the computational calculations, was carried out at the Centre for Advanced 2D Materials (CA2DM), funded by the National Research Foundation, Prime Minister's Office, Singapore, under its Medium-Sized Centre Programme, and by the Singapore Ministry of Education under its Research Centre of Excellence award to the Institute for Functional Intelligent Materials, National University of Singapore (I-FIM, project No. EDUNC-33-18-279-V12). The National Supercomputing Centre, Singapore (NSCC) is acknowledged for providing computational resources. P.E. and J.T. acknowledge the support of the Czech Science Foundation (grant number 22-05244S) and also the assistance provided by the Research Infrastructure NanoEnviCz, supported by the Ministry of Education, Youth and Sports of the Czech Republic under Project No. LM2023066.
- NR56
- TC0
- Z90
- U13
- U23
- PUWILEY-V C H VERLAG GMBH
- PIWEINHEIM
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN1616-301X
- J9ADV FUNCT MATER
- JIAdv. Funct. Mater.
- PDMAR 18
- PY2024
- DI10.1002/adfm.202315038
- PG11
- WCChemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
- SCChemistry; Science & Technology - Other Topics; Materials Science; Physics
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2023
|
Fang, Hanyan; Mahalingam, Harshitra; Li, Xinzhe; Han, Xu; Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Dulal, Dikshant; Chen, Hongfei; Lyu, Pin; Yang, Tianhao; Li, Jing; Su, Chenliang; Chen, Wei; Cai, Yongqing; Neto, Castro A H; Novoselov, Kostya S; Rodin, Aleksandr; Lu, Jiong Atomically precise vacancy-assembled quantum antidots NATURE NANOTECHNOLOGY, 18 (12), 2023, DOI: 10.1038/s41565-023-01495-z. Abstract | BibTeX | Endnote @article{ISI:001062548200002,
title = {Atomically precise vacancy-assembled quantum antidots},
author = {Hanyan Fang and Harshitra Mahalingam and Xinzhe Li and Xu Han and Zhizhan Qiu and Yixuan Han and Keian Noori and Dikshant Dulal and Hongfei Chen and Pin Lyu and Tianhao Yang and Jing Li and Chenliang Su and Wei Chen and Yongqing Cai and Castro A H Neto and Kostya S Novoselov and Aleksandr Rodin and Jiong Lu},
doi = {10.1038/s41565-023-01495-z},
times_cited = {8},
issn = {1748-3387},
year = {2023},
date = {2023-08-31},
journal = {NATURE NANOTECHNOLOGY},
volume = {18},
number = {12},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Patterning antidots, which are regions of potential hills that repel electrons, into well-defined antidot lattices creates fascinating artificial periodic structures, leading to anomalous transport properties and exotic quantum phenomena in two-dimensional systems. Although nanolithography has brought conventional antidots from the semiclassical regime to the quantum regime, achieving precise control over the size of each antidot and its spatial period at the atomic scale has remained challenging. However, attaining such control opens the door to a new paradigm, enabling the creation of quantum antidots with discrete quantum hole states, which, in turn, offer a fertile platform to explore novel quantum phenomena and hot electron dynamics in previously inaccessible regimes. Here we report an atomically precise bottom-up fabrication of a series of atomic-scale quantum antidots through a thermal-induced assembly of a chalcogenide single vacancy in PtTe2. Such quantum antidots consist of highly ordered single-vacancy lattices, spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of single vacancies in quantum antidots strengthens the cumulative repulsive potential and consequently enhances the collective interference of multiple-pocket scattered quasiparticles inside quantum antidots, creating multilevel quantum hole states with a tunable gap from the telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of quantum antidots are geometry protected and thus survive on oxygen substitutional doping. Therefore, single-vacancy-assembled quantum antidots exhibit unprecedented robustness and property tunability, positioning them as highly promising candidates for advancing quantum information and photocatalysis technologies.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Patterning antidots, which are regions of potential hills that repel electrons, into well-defined antidot lattices creates fascinating artificial periodic structures, leading to anomalous transport properties and exotic quantum phenomena in two-dimensional systems. Although nanolithography has brought conventional antidots from the semiclassical regime to the quantum regime, achieving precise control over the size of each antidot and its spatial period at the atomic scale has remained challenging. However, attaining such control opens the door to a new paradigm, enabling the creation of quantum antidots with discrete quantum hole states, which, in turn, offer a fertile platform to explore novel quantum phenomena and hot electron dynamics in previously inaccessible regimes. Here we report an atomically precise bottom-up fabrication of a series of atomic-scale quantum antidots through a thermal-induced assembly of a chalcogenide single vacancy in PtTe2. Such quantum antidots consist of highly ordered single-vacancy lattices, spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of single vacancies in quantum antidots strengthens the cumulative repulsive potential and consequently enhances the collective interference of multiple-pocket scattered quasiparticles inside quantum antidots, creating multilevel quantum hole states with a tunable gap from the telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of quantum antidots are geometry protected and thus survive on oxygen substitutional doping. Therefore, single-vacancy-assembled quantum antidots exhibit unprecedented robustness and property tunability, positioning them as highly promising candidates for advancing quantum information and photocatalysis technologies. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUFang, HY
Mahalingam, H
Li, XZ
Han, X
Qiu, ZZ
Han, YX
Noori, K
Dulal, D
Chen, HF
Lyu, P
Yang, TH
Li, J
Su, CL
Chen, W
Cai, YQ
Neto, AHC
Novoselov, KS
Rodin, A
Lu, J
- AFHanyan Fang
Harshitra Mahalingam
Xinzhe Li
Xu Han
Zhizhan Qiu
Yixuan Han
Keian Noori
Dikshant Dulal
Hongfei Chen
Pin Lyu
Tianhao Yang
Jing Li
Chenliang Su
Wei Chen
Yongqing Cai
Castro A H Neto
Kostya S Novoselov
Aleksandr Rodin
Jiong Lu
- TIAtomically precise vacancy-assembled quantum antidots
- SONATURE NANOTECHNOLOGY
- LAEnglish
- DTArticle
- IDHOT-ELECTRON GENERATION; LOGIC GATE; SEMICONDUCTOR; GRAPHENE; STATES
- ABPatterning antidots, which are regions of potential hills that repel electrons, into well-defined antidot lattices creates fascinating artificial periodic structures, leading to anomalous transport properties and exotic quantum phenomena in two-dimensional systems. Although nanolithography has brought conventional antidots from the semiclassical regime to the quantum regime, achieving precise control over the size of each antidot and its spatial period at the atomic scale has remained challenging. However, attaining such control opens the door to a new paradigm, enabling the creation of quantum antidots with discrete quantum hole states, which, in turn, offer a fertile platform to explore novel quantum phenomena and hot electron dynamics in previously inaccessible regimes. Here we report an atomically precise bottom-up fabrication of a series of atomic-scale quantum antidots through a thermal-induced assembly of a chalcogenide single vacancy in PtTe2. Such quantum antidots consist of highly ordered single-vacancy lattices, spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of single vacancies in quantum antidots strengthens the cumulative repulsive potential and consequently enhances the collective interference of multiple-pocket scattered quasiparticles inside quantum antidots, creating multilevel quantum hole states with a tunable gap from the telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of quantum antidots are geometry protected and thus survive on oxygen substitutional doping. Therefore, single-vacancy-assembled quantum antidots exhibit unprecedented robustness and property tunability, positioning them as highly promising candidates for advancing quantum information and photocatalysis technologies.
- C1[Fang, Hanyan; Han, Xu; Han, Yixuan; Lyu, Pin; Yang, Tianhao; Chen, Wei; Lu, Jiong] Natl Univ Singapore, Dept Chem, Singapore, Singapore.
[Mahalingam, Harshitra; Qiu, Zhizhan; Noori, Keian; Castro Neto, A. H.; Novoselov, Kostya S.; Lu, Jiong] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore.
[Li, Xinzhe] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian, Peoples R China.
[Noori, Keian; Chen, Wei; Castro Neto, A. H.; Novoselov, Kostya S.; Rodin, Aleksandr; Lu, Jiong] Natl Univ Singapore, CA2DM, Singapore, Singapore.
[Dulal, Dikshant; Rodin, Aleksandr] Yale NUS Coll, Singapore, Singapore.
[Chen, Hongfei; Cai, Yongqing] Univ Macau, Inst Appl Phys & Mat Engn, Joint Key Lab, Minist Educ, Taipa, Macao, Peoples R China.
[Li, Jing] Beihang Univ, Sch Chem, Key Lab Bioinspired Smart Interfacial Sci & Techn, Minist Educ, Beijing, Peoples R China.
[Su, Chenliang] Shenzhen Univ, Inst Microscale Optoelect, Int Collaborat Lab 2D Mat Optoelect Sci & Technol, Minist Educ, Shenzhen, Peoples R China.
[Rodin, Aleksandr] Natl Univ Singapore, Mat Sci & Engn, Singapore, Singapore - C3National University of Singapore; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Xi'an Jiaotong University; National University of Singapore; Yale NUS College; University of Macau; Beihang University; Shenzhen University; National University of Singapore
- RPLu, J (corresponding author), Natl Univ Singapore, Dept Chem, Singapore, Singapore; Lu, J (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore, Singapore; Rodin, A (corresponding author), Natl Univ Singapore, CA2DM, Singapore, Singapore; Rodin, A (corresponding author), Yale NUS Coll, Singapore, Singapore; Rodin, A (corresponding author), Natl Univ Singapore, Mat Sci & Engn, Singapore, Singapore
- FUMOE [MOE2019-T2-2-044, MOE-T2EP50121-0008, MOE-T2EP10221-0005]; MOE (Singapore) through the Research Centre of Excellence program [EDUN C-33-18-279-V12]; Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant [M21K2c0113]; National Research Foundation, Prime Minister Office, Singapore, under its Medium Sized Centre Programme [R-607-265-380-121]; Yale-NUS College
- FXJ. Lu acknowledges support from MOE grants (MOE2019-T2-2-044, MOE-T2EP50121-0008, MOE-T2EP10221-0005) and MOE (Singapore) through the Research Centre of Excellence program (grant no. EDUN C-33-18-279-V12, I-FIM) and Agency for Science, Technology and Research (A*STAR) under its AME IRG Grant (project no. M21K2c0113). A.R. acknowledges the National Research Foundation, Prime Minister Office, Singapore, under its Medium Sized Centre Programme and the support by Yale-NUS College (through grant no. R-607-265-380-121).
- NR56
- TC8
- Z98
- U125
- U244
- PUNATURE PORTFOLIO
- PIBERLIN
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- SN1748-3387
- J9NAT NANOTECHNOL
- JINat. Nanotechnol.
- PDDEC
- PY2023
- VL18
- DI10.1038/s41565-023-01495-z
- PG22
- WCNanoscience & Nanotechnology; Materials Science, Multidisciplinary
- SCScience & Technology - Other Topics; Materials Science
- GAKJ3W4
- UTWOS:001062548200002
- ER
- EF
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Yang, Kou; Hu, Zhitao; Li, Xiaolai; Nikolaev, Konstantin; Hong, Gan Kai; Mamchik, Natalia; Erofeev, Ivan; Mirsaidov, Utkur M; Neto, Antonio Castro H; Blackwood, Daniel J; Shchukin, Dmitry G; Trushin, Maxim; Novoselov, Kostya S; Andreeva, Daria V Graphene oxide-polyamine preprogrammable nanoreactors with sensing capability for corrosion protection of materials PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 120 (35), 2023, DOI: 10.1073/pnas.2307618120. Abstract | BibTeX | Endnote @article{ISI:001112759000007,
title = {Graphene oxide-polyamine preprogrammable nanoreactors with sensing capability for corrosion protection of materials},
author = {Kou Yang and Zhitao Hu and Xiaolai Li and Konstantin Nikolaev and Gan Kai Hong and Natalia Mamchik and Ivan Erofeev and Utkur M Mirsaidov and Antonio Castro H Neto and Daniel J Blackwood and Dmitry G Shchukin and Maxim Trushin and Kostya S Novoselov and Daria V Andreeva},
doi = {10.1073/pnas.2307618120},
times_cited = {1},
issn = {0027-8424},
year = {2023},
date = {2023-08-21},
journal = {PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA},
volume = {120},
number = {35},
publisher = {NATL ACAD SCIENCES},
address = {2101 CONSTITUTION AVE NW, WASHINGTON, DC 20418 USA},
abstract = {Corrosion is one of the major issues for sustainable manufacturing globally. The annual global cost of corrosion is US$2.5 trillion (approximately 3.4% of the world's GDP). The traditional ways of corrosion protection (such as barriers or inhibiting) are either not very effective (in the case of barrier protection) or excessively expensive (inhibiting). Here, we demonstrate a concept of nanoreactors, which are able to controllably release or adsorb protons or hydroxides directly on corrosion sites, hence, selectively regulating the corrosion reactions. A single nanoreactor comprises a nano compartment wrapped around by a pH-sensing membrane represented, respectively, by a halloysite nanotube and a graphene oxide/polyamine envelope. A nanoreactor response is determined by the change of a signaling pH on a given corrosion site. The nanoreactors are self-assembled and suitable for mass line production. The concept creates sustainable technology for developing smart anticorrosion coatings, which are nontoxic, selective, and inexpensive.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Corrosion is one of the major issues for sustainable manufacturing globally. The annual global cost of corrosion is US$2.5 trillion (approximately 3.4% of the world's GDP). The traditional ways of corrosion protection (such as barriers or inhibiting) are either not very effective (in the case of barrier protection) or excessively expensive (inhibiting). Here, we demonstrate a concept of nanoreactors, which are able to controllably release or adsorb protons or hydroxides directly on corrosion sites, hence, selectively regulating the corrosion reactions. A single nanoreactor comprises a nano compartment wrapped around by a pH-sensing membrane represented, respectively, by a halloysite nanotube and a graphene oxide/polyamine envelope. A nanoreactor response is determined by the change of a signaling pH on a given corrosion site. The nanoreactors are self-assembled and suitable for mass line production. The concept creates sustainable technology for developing smart anticorrosion coatings, which are nontoxic, selective, and inexpensive. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AUYang, K
Hu, ZT
Li, XL
Nikolaev, K
Hong, GK
Mamchik, N
Erofeev, I
Mirsaidov, UM
Neto, AHC
Blackwood, DJ
Shchukin, DG
Trushin, M
Novoselov, KS
Andreeva, DV
- AFKou Yang
Zhitao Hu
Xiaolai Li
Konstantin Nikolaev
Gan Kai Hong
Natalia Mamchik
Ivan Erofeev
Utkur M Mirsaidov
Antonio Castro H Neto
Daniel J Blackwood
Dmitry G Shchukin
Maxim Trushin
Kostya S Novoselov
Daria V Andreeva
- TIGraphene oxide-polyamine preprogrammable nanoreactors with sensing capability for corrosion protection of materials
- SOPROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- LAEnglish
- DTArticle
- DECorrosion; Graphene; Halloysite; Nanoreactor
- IDHALLOYSITE; DERIVATIVES; COMPOSITES; NANOTUBES; COATINGS
- ABCorrosion is one of the major issues for sustainable manufacturing globally. The annual global cost of corrosion is US$2.5 trillion (approximately 3.4% of the world's GDP). The traditional ways of corrosion protection (such as barriers or inhibiting) are either not very effective (in the case of barrier protection) or excessively expensive (inhibiting). Here, we demonstrate a concept of nanoreactors, which are able to controllably release or adsorb protons or hydroxides directly on corrosion sites, hence, selectively regulating the corrosion reactions. A single nanoreactor comprises a nano compartment wrapped around by a pH-sensing membrane represented, respectively, by a halloysite nanotube and a graphene oxide/polyamine envelope. A nanoreactor response is determined by the change of a signaling pH on a given corrosion site. The nanoreactors are self-assembled and suitable for mass line production. The concept creates sustainable technology for developing smart anticorrosion coatings, which are nontoxic, selective, and inexpensive.
- C1[Yang, Kou; Hu, Zhitao; Li, Xiaolai; Nikolaev, Konstantin; Hong, Gan Kai; Mamchik, Natalia; Neto, Antonio H. Castro; Blackwood, Daniel J.; Trushin, Maxim; Novoselov, Kostya S.; V. Andreeva, Daria] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore.
[Yang, Kou; Hu, Zhitao; Nikolaev, Konstantin; Hong, Gan Kai; Mamchik, Natalia; Neto, Antonio H. Castro; Trushin, Maxim; Novoselov, Kostya S.; V. Andreeva, Daria] Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore.
[Li, Xiaolai] Natl Univ Singapore, Suzhou Res Inst, Suzhou 215123, Jiangsu, Peoples R China.
[Erofeev, Ivan] Natl Univ Singapore, Dept Biol Sci, Singapore 117558, Singapore.
[Erofeev, Ivan; Mirsaidov, Utkur M.] Natl Univ Singapore, Ctr BioImaging Sci, Singapore 117543, Singapore.
[Neto, Antonio H. Castro] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore.
[Shchukin, Dmitry G.] Natl Univ Singapore, Ctr Adv Dimens Mat 2, Singapore 117546, Singapore.
[V. Andreeva, Daria] Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, England - C3National University of Singapore; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; National University of Singapore; National University of Singapore; National University of Singapore; University of Liverpool
- RPYang, K (corresponding author), Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore; Yang, K (corresponding author), Natl Univ Singapore, Inst Funct Intelligent Mat, Singapore 117544, Singapore; Andreeva, DV (corresponding author), Univ Liverpool, Stephenson Inst Renewable Energy, Liverpool L69 7ZF, England
- FUMinistry of Education (Singapore) through the Research Centre of Excellence program [EDUN C- 33- 18- 279- V12]; Royal Society (UK) [RSRPR190000]
- FXACKNOWLEDGMENTS. This work was supported by the Ministry of Education (Singapore) through the Research Centre of Excellence program (grant EDUN C- 33- 18- 279- V12, I- FIM) . K.S.N. is grateful to the Royal Society (UK, grant number RSRPR190000) for support.
- NR42
- TC1
- Z91
- U16
- U29
- PUNATL ACAD SCIENCES
- PIWASHINGTON
- PA2101 CONSTITUTION AVE NW, WASHINGTON, DC 20418 USA
- SN0027-8424
- J9PROC NAT ACAD SCI USA
- JIProc. Natl. Acad. Sci. U. S. A.
- PDAUG 21
- PY2023
- VL120
- DI10.1073/pnas.2307618120
- PG8
- WCMultidisciplinary Sciences
- SCScience & Technology - Other Topics
- GAZ5VW6
- UTWOS:001112759000007
- ER
- EF
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