2025
|
Sokolik, Alexey A; Aminov, Azat F; Vdovin, Evgenii E; Khanin, Yurii N; Kashchenko, Mikhail A; Bandurin, Denis A; Ghazaryan, Davit A; Morozov, Sergey V; Novoselov, Kostya S Probing the features of electron dispersion by tunneling between
slightly twisted bilayer graphene sheets APPLIED PHYSICS LETTERS, 127 (23), 2025, DOI: 10.1063/5.0303858. Abstract | BibTeX | Endnote @article{WOS:001637543500003,
title = {Probing the features of electron dispersion by tunneling between
slightly twisted bilayer graphene sheets},
author = {Alexey A Sokolik and Azat F Aminov and Evgenii E Vdovin and Yurii N Khanin and Mikhail A Kashchenko and Denis A Bandurin and Davit A Ghazaryan and Sergey V Morozov and Kostya S Novoselov},
doi = {10.1063/5.0303858},
times_cited = {0},
issn = {0003-6951},
year = {2025},
date = {2025-12-01},
journal = {APPLIED PHYSICS LETTERS},
volume = {127},
number = {23},
publisher = {AIP Publishing},
address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA},
abstract = {Tunneling conductance between two bilayer graphene (BLG) sheets
separated by 2 nm-thick insulating barrier was measured in two devices
with the twist angles between BLGs less than 1 degrees. At small bias
voltages, tunneling occurs with conservation of energy and momentum at
the points of intersection between two relatively shifted Fermi circles.
Here, we experimentally found and theoretically described signatures of
electron-hole asymmetric band structure of BLG: since holes are heavier,
the tunneling conductance is enhanced at the hole doping due to the
higher density of states. Another key feature of BLG that we explore is
gap opening in a vertical electric field with a strong polarization of
electron wave function at van Hove singularities near the gap edges.
This polarization, by shifting electron wave function in one BLG closer
to or father from the other BLG, gives rise to asymmetric tunneling
resonances in the conductance around charge neutrality points, which
result in strong sensitivity of the tunneling current to minor changes
of the gate voltages. The observed phenomena are reproduced by our
theoretical model taking into account electrostatics of the dual-gated
structure, quantum capacitance effects, and self-consistent gap openings
in both BLGs.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Tunneling conductance between two bilayer graphene (BLG) sheets
separated by 2 nm-thick insulating barrier was measured in two devices
with the twist angles between BLGs less than 1 degrees. At small bias
voltages, tunneling occurs with conservation of energy and momentum at
the points of intersection between two relatively shifted Fermi circles.
Here, we experimentally found and theoretically described signatures of
electron-hole asymmetric band structure of BLG: since holes are heavier,
the tunneling conductance is enhanced at the hole doping due to the
higher density of states. Another key feature of BLG that we explore is
gap opening in a vertical electric field with a strong polarization of
electron wave function at van Hove singularities near the gap edges.
This polarization, by shifting electron wave function in one BLG closer
to or father from the other BLG, gives rise to asymmetric tunneling
resonances in the conductance around charge neutrality points, which
result in strong sensitivity of the tunneling current to minor changes
of the gate voltages. The observed phenomena are reproduced by our
theoretical model taking into account electrostatics of the dual-gated
structure, quantum capacitance effects, and self-consistent gap openings
in both BLGs. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFAlexey A Sokolik
Azat F Aminov
Evgenii E Vdovin
Yurii N Khanin
Mikhail A Kashchenko
Denis A Bandurin
Davit A Ghazaryan
Sergey V Morozov
Kostya S Novoselov
- TIProbing the features of electron dispersion by tunneling between
slightly twisted bilayer graphene sheets - SOAPPLIED PHYSICS LETTERS
- DTArticle
- ABTunneling conductance between two bilayer graphene (BLG) sheets
separated by 2 nm-thick insulating barrier was measured in two devices
with the twist angles between BLGs less than 1 degrees. At small bias
voltages, tunneling occurs with conservation of energy and momentum at
the points of intersection between two relatively shifted Fermi circles.
Here, we experimentally found and theoretically described signatures of
electron-hole asymmetric band structure of BLG: since holes are heavier,
the tunneling conductance is enhanced at the hole doping due to the
higher density of states. Another key feature of BLG that we explore is
gap opening in a vertical electric field with a strong polarization of
electron wave function at van Hove singularities near the gap edges.
This polarization, by shifting electron wave function in one BLG closer
to or father from the other BLG, gives rise to asymmetric tunneling
resonances in the conductance around charge neutrality points, which
result in strong sensitivity of the tunneling current to minor changes
of the gate voltages. The observed phenomena are reproduced by our
theoretical model taking into account electrostatics of the dual-gated
structure, quantum capacitance effects, and self-consistent gap openings
in both BLGs. - Z90
- PUAIP Publishing
- PA1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
- SN0003-6951
- VL127
- DI10.1063/5.0303858
- UTWOS:001637543500003
- ER
- EF
|
Slavich, Aleksandr S; Ermolaev, Georgy A; Zavidovskiy, Ilya A; Grudinin, Dmitriy V; Kravtsov, Konstantin V; Tatmyshevskiy, Mikhail K; Mironov, Mikhail S; Toksumakov, Adilet N; Tselikov, Gleb I; Fradkin, Ilia M; Voronin, Kirill V; Povolotskiy, Maksim R; Matveeva, Olga G; Syuy, Alexander V; Yakubovsky, Dmitry I; Tsymbarenko, Dmitry M; Kruglov, Ivan; Ghazaryan, Davit A; Novikov, Sergey M; Vyshnevyy, Andrey A; Arsenin, Aleksey V; Volkov, Valentyn S; Novoselov, Kostya S Germanium disulfide as an alternative high refractive index and
transparent material for UV-visible nanophotonics LIGHT-SCIENCE & APPLICATIONS, 14 (1), 2025, DOI: 10.1038/s41377-025-01886-y. Abstract | BibTeX | Endnote @article{WOS:001510461600001,
title = {Germanium disulfide as an alternative high refractive index and
transparent material for UV-visible nanophotonics},
author = {Aleksandr S Slavich and Georgy A Ermolaev and Ilya A Zavidovskiy and Dmitriy V Grudinin and Konstantin V Kravtsov and Mikhail K Tatmyshevskiy and Mikhail S Mironov and Adilet N Toksumakov and Gleb I Tselikov and Ilia M Fradkin and Kirill V Voronin and Maksim R Povolotskiy and Olga G Matveeva and Alexander V Syuy and Dmitry I Yakubovsky and Dmitry M Tsymbarenko and Ivan Kruglov and Davit A Ghazaryan and Sergey M Novikov and Andrey A Vyshnevyy and Aleksey V Arsenin and Valentyn S Volkov and Kostya S Novoselov},
doi = {10.1038/s41377-025-01886-y},
times_cited = {6},
issn = {2095-5545},
year = {2025},
date = {2025-06-01},
journal = {LIGHT-SCIENCE & APPLICATIONS},
volume = {14},
number = {1},
publisher = {SPRINGERNATURE},
address = {CAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND},
abstract = {Thanks to their record high refractive index and giant optical
anisotropy, van der Waals (vdW) materials have accelerated the
development of nanophotonics. However, traditional high refractive index
materials, such as titanium dioxide (TiO2), still dominate in the most
important visible range. This is due to the current lack of transparent
vdW materials across the entire visible spectrum. In this context, we
propose that germanium disulfide (GeS2) could offer a significant
breakthrough. With its high refractive index, negligible losses, and
biaxial optical anisotropy across the whole visible range, GeS2 has the
potential to complement TiO2 and close the application gap of vdW
materials in the visible spectrum. The addition of GeS2 could have a
profound impact on the design of van der Waals nanophotonic circuits for
any operation wavelength from ultraviolet to infrared, emphasizing the
significance of the potential impact of GeS2 on the field of
nanophotonics.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Thanks to their record high refractive index and giant optical
anisotropy, van der Waals (vdW) materials have accelerated the
development of nanophotonics. However, traditional high refractive index
materials, such as titanium dioxide (TiO2), still dominate in the most
important visible range. This is due to the current lack of transparent
vdW materials across the entire visible spectrum. In this context, we
propose that germanium disulfide (GeS2) could offer a significant
breakthrough. With its high refractive index, negligible losses, and
biaxial optical anisotropy across the whole visible range, GeS2 has the
potential to complement TiO2 and close the application gap of vdW
materials in the visible spectrum. The addition of GeS2 could have a
profound impact on the design of van der Waals nanophotonic circuits for
any operation wavelength from ultraviolet to infrared, emphasizing the
significance of the potential impact of GeS2 on the field of
nanophotonics. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFAleksandr S Slavich
Georgy A Ermolaev
Ilya A Zavidovskiy
Dmitriy V Grudinin
Konstantin V Kravtsov
Mikhail K Tatmyshevskiy
Mikhail S Mironov
Adilet N Toksumakov
Gleb I Tselikov
Ilia M Fradkin
Kirill V Voronin
Maksim R Povolotskiy
Olga G Matveeva
Alexander V Syuy
Dmitry I Yakubovsky
Dmitry M Tsymbarenko
Ivan Kruglov
Davit A Ghazaryan
Sergey M Novikov
Andrey A Vyshnevyy
Aleksey V Arsenin
Valentyn S Volkov
Kostya S Novoselov
- TIGermanium disulfide as an alternative high refractive index and
transparent material for UV-visible nanophotonics - SOLIGHT-SCIENCE & APPLICATIONS
- DTArticle
- ABThanks to their record high refractive index and giant optical
anisotropy, van der Waals (vdW) materials have accelerated the
development of nanophotonics. However, traditional high refractive index
materials, such as titanium dioxide (TiO2), still dominate in the most
important visible range. This is due to the current lack of transparent
vdW materials across the entire visible spectrum. In this context, we
propose that germanium disulfide (GeS2) could offer a significant
breakthrough. With its high refractive index, negligible losses, and
biaxial optical anisotropy across the whole visible range, GeS2 has the
potential to complement TiO2 and close the application gap of vdW
materials in the visible spectrum. The addition of GeS2 could have a
profound impact on the design of van der Waals nanophotonic circuits for
any operation wavelength from ultraviolet to infrared, emphasizing the
significance of the potential impact of GeS2 on the field of
nanophotonics. - Z96
- PUSPRINGERNATURE
- PACAMPUS, 4 CRINAN ST, LONDON, N1 9XW, ENGLAND
- SN2095-5545
- VL14
- DI10.1038/s41377-025-01886-y
- UTWOS:001510461600001
- ER
- EF
|
Kuznetsov, Alexey; Anikina, Maria Aleksandrovna; Toksumakov, Adilet Nurlanbekovich; Abramov, Artem Nikolaevich; Dremov, Vyacheslav Vsevolodovich; Zavyalova, Eseniya; Kondratev, Valeriy Mikhailovich; Fedorov, Vladimir Victorovich; Mukhin, Ivan Sergeevich; Kravtsov, Vasily; Novoselov, Kostya Sergeevich; Arsenin, Aleksey Vladimirovich; Volkov, Valentyn Sergeevich; Ghazaryan, Davit Armenovich; Bolshakov, Alexey Dmitrievich In-Plane Directional MoS2 Emitter Employing Dielectric
Nanowire Cavity SMALL STRUCTURES, 6 (4), 2025, DOI: 10.1002/sstr.202400476. Abstract | BibTeX | Endnote @article{WOS:001420861100001,
title = {In-Plane Directional MoS2 Emitter Employing Dielectric
Nanowire Cavity},
author = {Alexey Kuznetsov and Maria Aleksandrovna Anikina and Adilet Nurlanbekovich Toksumakov and Artem Nikolaevich Abramov and Vyacheslav Vsevolodovich Dremov and Eseniya Zavyalova and Valeriy Mikhailovich Kondratev and Vladimir Victorovich Fedorov and Ivan Sergeevich Mukhin and Vasily Kravtsov and Kostya Sergeevich Novoselov and Aleksey Vladimirovich Arsenin and Valentyn Sergeevich Volkov and Davit Armenovich Ghazaryan and Alexey Dmitrievich Bolshakov},
doi = {10.1002/sstr.202400476},
times_cited = {5},
year = {2025},
date = {2025-04-01},
journal = {SMALL STRUCTURES},
volume = {6},
number = {4},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Two-dimensional transition metal dichalcogenides (TMDC) exhibit
exceptional optical properties, such as strong light-matter interaction
and robust light emission. Nonetheless, their integration into
conventional silicon-based nanophotonic devices, which allow high
emission efficiency is still challenging. Herein, a hybrid nanophotonic
structure based on monolayer MoS2 and GaP nanowire for the enhancement
of the emission and its directional outcoupling through the nanowire is
presented. Furthermore, the resonant optical action of the nanowire,
which leads to spectral modulation of the MoS2 photoluminescence with a
remarkable Q factor exceeding 350 is investigated. The work showcases
the achievement of directional in-plane outcoupling of the 2D TMDC's
photoluminescence and its remote optical excitation. These results pave
the way to the development of nanoscale laser sources and on-chip light
routing for basic nanophotonic circuitry based on 2D materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Two-dimensional transition metal dichalcogenides (TMDC) exhibit
exceptional optical properties, such as strong light-matter interaction
and robust light emission. Nonetheless, their integration into
conventional silicon-based nanophotonic devices, which allow high
emission efficiency is still challenging. Herein, a hybrid nanophotonic
structure based on monolayer MoS2 and GaP nanowire for the enhancement
of the emission and its directional outcoupling through the nanowire is
presented. Furthermore, the resonant optical action of the nanowire,
which leads to spectral modulation of the MoS2 photoluminescence with a
remarkable Q factor exceeding 350 is investigated. The work showcases
the achievement of directional in-plane outcoupling of the 2D TMDC's
photoluminescence and its remote optical excitation. These results pave
the way to the development of nanoscale laser sources and on-chip light
routing for basic nanophotonic circuitry based on 2D materials. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFAlexey Kuznetsov
Maria Aleksandrovna Anikina
Adilet Nurlanbekovich Toksumakov
Artem Nikolaevich Abramov
Vyacheslav Vsevolodovich Dremov
Eseniya Zavyalova
Valeriy Mikhailovich Kondratev
Vladimir Victorovich Fedorov
Ivan Sergeevich Mukhin
Vasily Kravtsov
Kostya Sergeevich Novoselov
Aleksey Vladimirovich Arsenin
Valentyn Sergeevich Volkov
Davit Armenovich Ghazaryan
Alexey Dmitrievich Bolshakov
- TIIn-Plane Directional MoS2 Emitter Employing Dielectric
Nanowire Cavity - SOSMALL STRUCTURES
- DTArticle
- ABTwo-dimensional transition metal dichalcogenides (TMDC) exhibit
exceptional optical properties, such as strong light-matter interaction
and robust light emission. Nonetheless, their integration into
conventional silicon-based nanophotonic devices, which allow high
emission efficiency is still challenging. Herein, a hybrid nanophotonic
structure based on monolayer MoS2 and GaP nanowire for the enhancement
of the emission and its directional outcoupling through the nanowire is
presented. Furthermore, the resonant optical action of the nanowire,
which leads to spectral modulation of the MoS2 photoluminescence with a
remarkable Q factor exceeding 350 is investigated. The work showcases
the achievement of directional in-plane outcoupling of the 2D TMDC's
photoluminescence and its remote optical excitation. These results pave
the way to the development of nanoscale laser sources and on-chip light
routing for basic nanophotonic circuitry based on 2D materials. - Z95
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- VL6
- DI10.1002/sstr.202400476
- UTWOS:001420861100001
- ER
- EF
|
Bereznikova, Liudmila A; Kruglov, Ivan A; Ermolaev, Georgy A; Trofimov, Ivan; Xie, Congwei; Mazitov, Arslan; Tselikov, Gleb; Minnekhanov, Anton; Tsapenko, Alexey P; Povolotsky, Maxim; Ghazaryan, Davit A; Arsenin, Aleksey V; Volkov, Valentyn S; Novoselov, Kostya S Artificial intelligence guided search for van der Waals materials with
high optical anisotropy MATERIALS HORIZONS, 12 (6), pp. 1953-1961, 2025, DOI: 10.1039/d4mh01332h. Abstract | BibTeX | Endnote @article{WOS:001380473200001,
title = {Artificial intelligence guided search for van der Waals materials with
high optical anisotropy},
author = {Liudmila A Bereznikova and Ivan A Kruglov and Georgy A Ermolaev and Ivan Trofimov and Congwei Xie and Arslan Mazitov and Gleb Tselikov and Anton Minnekhanov and Alexey P Tsapenko and Maxim Povolotsky and Davit A Ghazaryan and Aleksey V Arsenin and Valentyn S Volkov and Kostya S Novoselov},
doi = {10.1039/d4mh01332h},
times_cited = {5},
issn = {2051-6347},
year = {2025},
date = {2025-03-01},
journal = {MATERIALS HORIZONS},
volume = {12},
number = {6},
pages = {1953-1961},
publisher = {ROYAL SOC CHEMISTRY},
address = {THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS,
ENGLAND},
abstract = {The exploration of van der Waals (vdW) materials, renowned for their
unique optical properties, is pivotal for advanced photonics. These
materials exhibit exceptional optical anisotropy, both in-plane and
out-of-plane, making them an ideal platform for novel photonic
applications. However, the manual search for vdW materials with giant
optical anisotropy is a labor-intensive process unsuitable for the fast
screening of materials with unique properties. Here, we leverage
geometrical and machine learning (ML) approaches to streamline this
search, employing deep learning architectures, including the recently
developed Atomistic Line Graph Neural Network. Within the geometrical
approach, we clustered vdW materials based on in-plane and out-of-plane
birefringence values and correlated optical anisotropy with
crystallographic parameters. The more accurate ML model demonstrates
high predictive capability, validated through density functional theory
and ellipsometry measurements. Experimental verification with 2H-MoTe2
and CdPS3 confirms the theoretical predictions, underscoring the
potential of ML in discovering and optimizing vdW materials with
unprecedented optical performance.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The exploration of van der Waals (vdW) materials, renowned for their
unique optical properties, is pivotal for advanced photonics. These
materials exhibit exceptional optical anisotropy, both in-plane and
out-of-plane, making them an ideal platform for novel photonic
applications. However, the manual search for vdW materials with giant
optical anisotropy is a labor-intensive process unsuitable for the fast
screening of materials with unique properties. Here, we leverage
geometrical and machine learning (ML) approaches to streamline this
search, employing deep learning architectures, including the recently
developed Atomistic Line Graph Neural Network. Within the geometrical
approach, we clustered vdW materials based on in-plane and out-of-plane
birefringence values and correlated optical anisotropy with
crystallographic parameters. The more accurate ML model demonstrates
high predictive capability, validated through density functional theory
and ellipsometry measurements. Experimental verification with 2H-MoTe2
and CdPS3 confirms the theoretical predictions, underscoring the
potential of ML in discovering and optimizing vdW materials with
unprecedented optical performance. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFLiudmila A Bereznikova
Ivan A Kruglov
Georgy A Ermolaev
Ivan Trofimov
Congwei Xie
Arslan Mazitov
Gleb Tselikov
Anton Minnekhanov
Alexey P Tsapenko
Maxim Povolotsky
Davit A Ghazaryan
Aleksey V Arsenin
Valentyn S Volkov
Kostya S Novoselov
- TIArtificial intelligence guided search for van der Waals materials with
high optical anisotropy - SOMATERIALS HORIZONS
- DTArticle
- ABThe exploration of van der Waals (vdW) materials, renowned for their
unique optical properties, is pivotal for advanced photonics. These
materials exhibit exceptional optical anisotropy, both in-plane and
out-of-plane, making them an ideal platform for novel photonic
applications. However, the manual search for vdW materials with giant
optical anisotropy is a labor-intensive process unsuitable for the fast
screening of materials with unique properties. Here, we leverage
geometrical and machine learning (ML) approaches to streamline this
search, employing deep learning architectures, including the recently
developed Atomistic Line Graph Neural Network. Within the geometrical
approach, we clustered vdW materials based on in-plane and out-of-plane
birefringence values and correlated optical anisotropy with
crystallographic parameters. The more accurate ML model demonstrates
high predictive capability, validated through density functional theory
and ellipsometry measurements. Experimental verification with 2H-MoTe2
and CdPS3 confirms the theoretical predictions, underscoring the
potential of ML in discovering and optimizing vdW materials with
unprecedented optical performance. - Z95
- PUROYAL SOC CHEMISTRY
- PATHOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS,
ENGLAND - SN2051-6347
- VL12
- BP1953
- EP1961
- DI10.1039/d4mh01332h
- UTWOS:001380473200001
- ER
- EF
|
2024
|
Voronin, Kirill V; Toksumakov, Adilet N; Ermolaev, Georgy A; Slavich, Aleksandr S; Tatmyshevskiy, Mikhail K; Novikov, Sergey M; Vyshnevyy, Andrey A; Arsenin, Aleksey V; Novoselov, Kostya S; Ghazaryan, Davit A; Volkov, Valentyn S; Baranov, Denis G Chiral Photonic Super-Crystals Based on Helical van der Waals
Homostructures 15 LASER & PHOTONICS REVIEWS, 18 (7), 2024, DOI: 10.1002/lpor.202301113. Abstract | BibTeX | Endnote @article{WOS:001184877700001,
title = {Chiral Photonic Super-Crystals Based on Helical van der Waals
Homostructures},
author = {Kirill V Voronin and Adilet N Toksumakov and Georgy A Ermolaev and Aleksandr S Slavich and Mikhail K Tatmyshevskiy and Sergey M Novikov and Andrey A Vyshnevyy and Aleksey V Arsenin and Kostya S Novoselov and Davit A Ghazaryan and Valentyn S Volkov and Denis G Baranov},
doi = {10.1002/lpor.202301113},
times_cited = {15},
issn = {1863-8880},
year = {2024},
date = {2024-07-01},
journal = {LASER & PHOTONICS REVIEWS},
volume = {18},
number = {7},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Chirality is one of the most mysterious symmetry transformations. Very
readily broken in biological systems, it is practically absent in
naturally occurring inorganic materials and is very challenging to
create artificially. Chiral optical wavefronts are often used for the
identification, control, and discrimination of left- and right-handed
biological and other molecules. Thus, it is crucially important to
create materials capable of chiral interaction with light, which would
allow one to assign arbitrary chiral properties to a light field. This
study utilizes van der Waals technology to assemble helical
homostructures with chiral properties (e.g., circular dichroism).
Because of the large range of van der Waals materials available, such
helical homostructures can be assigned with very flexible optical
properties. The approach is demonstrated by creating helical
homostructures based on multilayer As2S3$textbackslashrm
As_2textbackslashrm S_3$ (arsenic trisulfide), which offers
the most pronounced chiral properties even in thin structures due to its
strong biaxial optically anisotropy. The work showcases that the
chirality of an electromagnetic system may emerge at an intermediate
level between the molecular and the mesoscopic one due to the tailored
arrangement of non-chiral layers of van der Waals crystals and without
additional patterning.
Chirality is a geometrical property of 3D objects that not only
profoundly affects the optical properties of matter, but also can be the
key to understanding many biological processes. This study presents a
novel platform for the design of helical nanostructures possessing
strong chiroptical response based on thin layers of a non-chiral van der
Waals material. image},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Chirality is one of the most mysterious symmetry transformations. Very
readily broken in biological systems, it is practically absent in
naturally occurring inorganic materials and is very challenging to
create artificially. Chiral optical wavefronts are often used for the
identification, control, and discrimination of left- and right-handed
biological and other molecules. Thus, it is crucially important to
create materials capable of chiral interaction with light, which would
allow one to assign arbitrary chiral properties to a light field. This
study utilizes van der Waals technology to assemble helical
homostructures with chiral properties (e.g., circular dichroism).
Because of the large range of van der Waals materials available, such
helical homostructures can be assigned with very flexible optical
properties. The approach is demonstrated by creating helical
homostructures based on multilayer As2S3$textbackslashrm
As_2textbackslashrm S_3$ (arsenic trisulfide), which offers
the most pronounced chiral properties even in thin structures due to its
strong biaxial optically anisotropy. The work showcases that the
chirality of an electromagnetic system may emerge at an intermediate
level between the molecular and the mesoscopic one due to the tailored
arrangement of non-chiral layers of van der Waals crystals and without
additional patterning.
Chirality is a geometrical property of 3D objects that not only
profoundly affects the optical properties of matter, but also can be the
key to understanding many biological processes. This study presents a
novel platform for the design of helical nanostructures possessing
strong chiroptical response based on thin layers of a non-chiral van der
Waals material. image - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFKirill V Voronin
Adilet N Toksumakov
Georgy A Ermolaev
Aleksandr S Slavich
Mikhail K Tatmyshevskiy
Sergey M Novikov
Andrey A Vyshnevyy
Aleksey V Arsenin
Kostya S Novoselov
Davit A Ghazaryan
Valentyn S Volkov
Denis G Baranov
- TIChiral Photonic Super-Crystals Based on Helical van der Waals
Homostructures - SOLASER & PHOTONICS REVIEWS
- DTArticle
- ABChirality is one of the most mysterious symmetry transformations. Very
readily broken in biological systems, it is practically absent in
naturally occurring inorganic materials and is very challenging to
create artificially. Chiral optical wavefronts are often used for the
identification, control, and discrimination of left- and right-handed
biological and other molecules. Thus, it is crucially important to
create materials capable of chiral interaction with light, which would
allow one to assign arbitrary chiral properties to a light field. This
study utilizes van der Waals technology to assemble helical
homostructures with chiral properties (e.g., circular dichroism).
Because of the large range of van der Waals materials available, such
helical homostructures can be assigned with very flexible optical
properties. The approach is demonstrated by creating helical
homostructures based on multilayer As2S3$textbackslashrm
As_2textbackslashrm S_3$ (arsenic trisulfide), which offers
the most pronounced chiral properties even in thin structures due to its
strong biaxial optically anisotropy. The work showcases that the
chirality of an electromagnetic system may emerge at an intermediate
level between the molecular and the mesoscopic one due to the tailored
arrangement of non-chiral layers of van der Waals crystals and without
additional patterning.
Chirality is a geometrical property of 3D objects that not only
profoundly affects the optical properties of matter, but also can be the
key to understanding many biological processes. This study presents a
novel platform for the design of helical nanostructures possessing
strong chiroptical response based on thin layers of a non-chiral van der
Waals material. image - Z915
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN1863-8880
- VL18
- DI10.1002/lpor.202301113
- UTWOS:001184877700001
- ER
- EF
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