2026
|
Alharbi, Osamah; Yuan, Yue; Zheng, Wenwen; Ping, Yue; Pazos, Sebastian; Alshareef, Husam; Zhu, Kaichen; Lanza, Mario Nanodot conductive atomic force microscopy MATERIALS SCIENCE & ENGINEERING R-REPORTS, 169 , 2026, DOI: 10.1016/j.mser.2026.101187. Abstract | BibTeX | Endnote @article{WOS:001674879800001,
title = {Nanodot conductive atomic force microscopy},
author = {Osamah Alharbi and Yue Yuan and Wenwen Zheng and Yue Ping and Sebastian Pazos and Husam Alshareef and Kaichen Zhu and Mario Lanza},
doi = {10.1016/j.mser.2026.101187},
times_cited = {0},
issn = {0927-796X},
year = {2026},
date = {2026-04-01},
journal = {MATERIALS SCIENCE & ENGINEERING R-REPORTS},
volume = {169},
publisher = {ELSEVIER SCIENCE SA},
address = {PO BOX 564, 1001 LAUSANNE, SWITZERLAND},
abstract = {Gate-all-around (GAA) transistors and memristors are two key electronic
components for the semiconductor industry, as they can enable
high-performance computation and memory. State-of-the-art devices
contain a 700-100,000 nm2 insulating thin film exposed to electrical
fields, and understanding its progressive degradation and breakdown is
essential to build reliable devices. Investigations in this direction
must fabricate test structures and/or devices of similar sizes,
otherwise the conclusions extracted are not applicable. Many research
groups use electron beam lithography, but this technique introduces
polymer residues and leads to low fabrication yields due to the complex
lift-off process. Some groups use conductive Atomic Force Microscopy
(CAFM), which employs an ultra-sharp conductive tip to analyse the
properties of a material at small areas ranging from 1 to 600 nm2.
However, the currents registered by CAFM strongly depend on three
parameters that are difficult to control: the radius of the probe tips,
the spring constant of the cantilever, and the relative humidity of the
environment. Therefore, a major problem of CAFM is reproducibility.
Moreover, the minimum current densities that standard CAFM can detect
range from 0.16 to 100 A/cm2, but that is insufficient to study gate
dielectrics for low power applications (that requires analysing values
below 0.01 A/cm2). Here we present nanodot CAFM, a measuring protocol
that consists of placing the probe tip of a CAFM on metallic nanodots
patterned on the surface of the material under test. These structures
cover areas between 700 and 10,000 nm2, and they can be easily deposited
on any arbitrary sample using a standard evaporator and a cheap
aluminium anodic oxide template as shadow mask. Our experiments
demonstrate that this setup is insensitive to relative humidity changes
from 55 % to 4 %, deflection setpoint changes from -0.5 to 1 V, spring
constant changes from 0.8 to 18 N/m, and tip radius changes from 2 to
200 nm, leading to a very high reproducibility. Moreover, this setup
allows analysing current densities below 10-2 A/cm2, which extends its
range of use. Our approach can help the community to make
industry-relevant studies with a high throughput without having to
undergo expensive, slow, and low-yield nanofabrication processes (such
as electron beam lithography or multi project wafer tape outs).},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Gate-all-around (GAA) transistors and memristors are two key electronic
components for the semiconductor industry, as they can enable
high-performance computation and memory. State-of-the-art devices
contain a 700-100,000 nm2 insulating thin film exposed to electrical
fields, and understanding its progressive degradation and breakdown is
essential to build reliable devices. Investigations in this direction
must fabricate test structures and/or devices of similar sizes,
otherwise the conclusions extracted are not applicable. Many research
groups use electron beam lithography, but this technique introduces
polymer residues and leads to low fabrication yields due to the complex
lift-off process. Some groups use conductive Atomic Force Microscopy
(CAFM), which employs an ultra-sharp conductive tip to analyse the
properties of a material at small areas ranging from 1 to 600 nm2.
However, the currents registered by CAFM strongly depend on three
parameters that are difficult to control: the radius of the probe tips,
the spring constant of the cantilever, and the relative humidity of the
environment. Therefore, a major problem of CAFM is reproducibility.
Moreover, the minimum current densities that standard CAFM can detect
range from 0.16 to 100 A/cm2, but that is insufficient to study gate
dielectrics for low power applications (that requires analysing values
below 0.01 A/cm2). Here we present nanodot CAFM, a measuring protocol
that consists of placing the probe tip of a CAFM on metallic nanodots
patterned on the surface of the material under test. These structures
cover areas between 700 and 10,000 nm2, and they can be easily deposited
on any arbitrary sample using a standard evaporator and a cheap
aluminium anodic oxide template as shadow mask. Our experiments
demonstrate that this setup is insensitive to relative humidity changes
from 55 % to 4 %, deflection setpoint changes from -0.5 to 1 V, spring
constant changes from 0.8 to 18 N/m, and tip radius changes from 2 to
200 nm, leading to a very high reproducibility. Moreover, this setup
allows analysing current densities below 10-2 A/cm2, which extends its
range of use. Our approach can help the community to make
industry-relevant studies with a high throughput without having to
undergo expensive, slow, and low-yield nanofabrication processes (such
as electron beam lithography or multi project wafer tape outs). - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFOsamah Alharbi
Yue Yuan
Wenwen Zheng
Yue Ping
Sebastian Pazos
Husam Alshareef
Kaichen Zhu
Mario Lanza
- TINanodot conductive atomic force microscopy
- SOMATERIALS SCIENCE & ENGINEERING R-REPORTS
- DTArticle
- ABGate-all-around (GAA) transistors and memristors are two key electronic
components for the semiconductor industry, as they can enable
high-performance computation and memory. State-of-the-art devices
contain a 700-100,000 nm2 insulating thin film exposed to electrical
fields, and understanding its progressive degradation and breakdown is
essential to build reliable devices. Investigations in this direction
must fabricate test structures and/or devices of similar sizes,
otherwise the conclusions extracted are not applicable. Many research
groups use electron beam lithography, but this technique introduces
polymer residues and leads to low fabrication yields due to the complex
lift-off process. Some groups use conductive Atomic Force Microscopy
(CAFM), which employs an ultra-sharp conductive tip to analyse the
properties of a material at small areas ranging from 1 to 600 nm2.
However, the currents registered by CAFM strongly depend on three
parameters that are difficult to control: the radius of the probe tips,
the spring constant of the cantilever, and the relative humidity of the
environment. Therefore, a major problem of CAFM is reproducibility.
Moreover, the minimum current densities that standard CAFM can detect
range from 0.16 to 100 A/cm2, but that is insufficient to study gate
dielectrics for low power applications (that requires analysing values
below 0.01 A/cm2). Here we present nanodot CAFM, a measuring protocol
that consists of placing the probe tip of a CAFM on metallic nanodots
patterned on the surface of the material under test. These structures
cover areas between 700 and 10,000 nm2, and they can be easily deposited
on any arbitrary sample using a standard evaporator and a cheap
aluminium anodic oxide template as shadow mask. Our experiments
demonstrate that this setup is insensitive to relative humidity changes
from 55 % to 4 %, deflection setpoint changes from -0.5 to 1 V, spring
constant changes from 0.8 to 18 N/m, and tip radius changes from 2 to
200 nm, leading to a very high reproducibility. Moreover, this setup
allows analysing current densities below 10-2 A/cm2, which extends its
range of use. Our approach can help the community to make
industry-relevant studies with a high throughput without having to
undergo expensive, slow, and low-yield nanofabrication processes (such
as electron beam lithography or multi project wafer tape outs). - Z90
- PUELSEVIER SCIENCE SA
- PAPO BOX 564, 1001 LAUSANNE, SWITZERLAND
- SN0927-796X
- VL169
- DI10.1016/j.mser.2026.101187
- UTWOS:001674879800001
- ER
- EF
|
Zhang, Hongji; Grebenko, Artem K; Litvinov, Dmitrii; Zheng, Wenwen; Iakoubovskii, Konstantin V; Grebenchuk, Sergey Y; Makarova, Anna; Fedorov, Alexander; Starkov, Andrei; Orofeo, Carlo M; Vyalikh, Denis V; Lanza, Mario; Koperski, Maciej; Novoselov, Kostya S; Toh, Chee-tat; Ozyilmaz, Barbaros Breaking the 2-nm Barrier in Hard Disk Drives Using Monolayer Amorphous
Carbon Overcoats ADVANCED MATERIALS, 2026, DOI: 10.1002/adma.202519149. Abstract | BibTeX | Endnote @article{WOS:001680918000001,
title = {Breaking the 2-nm Barrier in Hard Disk Drives Using Monolayer Amorphous
Carbon Overcoats},
author = {Hongji Zhang and Artem K Grebenko and Dmitrii Litvinov and Wenwen Zheng and Konstantin V Iakoubovskii and Sergey Y Grebenchuk and Anna Makarova and Alexander Fedorov and Andrei Starkov and Carlo M Orofeo and Denis V Vyalikh and Mario Lanza and Maciej Koperski and Kostya S Novoselov and Chee-tat Toh and Barbaros Ozyilmaz},
doi = {10.1002/adma.202519149},
times_cited = {0},
issn = {0935-9648},
year = {2026},
date = {2026-02-01},
journal = {ADVANCED MATERIALS},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {The rapid growth of artificial intelligence (AI) has increased the
demand for large-scale data storage, making hard disk drives (HDDs)
indispensable in data centers due to their cost-effectiveness and
stability. To support AI-driven data requirements, increasing the areal
storage density is critical. However, this metric is increasingly
constrained by the carbon overcoat (COC), the essential protective layer
for magnetic media. Traditional diamond-like carbon (DLC) can no longer
fulfill the stringent demands for ultrathin coatings and high thermal
stability required by next-generation technologies like Heat-Assisted
Magnetic Recording (HAMR) and bit-patterned media. Here, we introduce
monolayer amorphous carbon (MAC) as a superior alternative. MAC is
directly grown on the heterogeneous (Fe, Pt, SiO2) HDD surface at low
temperatures (similar to 300 degrees C), achieving an uniform 0.8 nm
thickness across 2.5-inch disks. Despite its atomic thickness, MAC
demonstrates high corrosion resistance and low roughness comparable to
commercial 2.5 nm COCs. Its fully amorphous, sp2-hybridized structure
ensures excellent thermal stability under HAMR-like conditions (similar
to 450 degrees C) and a low friction coefficient, enabling potential
lubricant-free operation. Replacing traditional COCs with MAC
facilitates the development of HDD media capable of achieving 10 Tb/in2,
addressing the urgent storage demands of the digital era.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The rapid growth of artificial intelligence (AI) has increased the
demand for large-scale data storage, making hard disk drives (HDDs)
indispensable in data centers due to their cost-effectiveness and
stability. To support AI-driven data requirements, increasing the areal
storage density is critical. However, this metric is increasingly
constrained by the carbon overcoat (COC), the essential protective layer
for magnetic media. Traditional diamond-like carbon (DLC) can no longer
fulfill the stringent demands for ultrathin coatings and high thermal
stability required by next-generation technologies like Heat-Assisted
Magnetic Recording (HAMR) and bit-patterned media. Here, we introduce
monolayer amorphous carbon (MAC) as a superior alternative. MAC is
directly grown on the heterogeneous (Fe, Pt, SiO2) HDD surface at low
temperatures (similar to 300 degrees C), achieving an uniform 0.8 nm
thickness across 2.5-inch disks. Despite its atomic thickness, MAC
demonstrates high corrosion resistance and low roughness comparable to
commercial 2.5 nm COCs. Its fully amorphous, sp2-hybridized structure
ensures excellent thermal stability under HAMR-like conditions (similar
to 450 degrees C) and a low friction coefficient, enabling potential
lubricant-free operation. Replacing traditional COCs with MAC
facilitates the development of HDD media capable of achieving 10 Tb/in2,
addressing the urgent storage demands of the digital era. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFHongji Zhang
Artem K Grebenko
Dmitrii Litvinov
Wenwen Zheng
Konstantin V Iakoubovskii
Sergey Y Grebenchuk
Anna Makarova
Alexander Fedorov
Andrei Starkov
Carlo M Orofeo
Denis V Vyalikh
Mario Lanza
Maciej Koperski
Kostya S Novoselov
Chee-tat Toh
Barbaros Ozyilmaz
- TIBreaking the 2-nm Barrier in Hard Disk Drives Using Monolayer Amorphous
Carbon Overcoats - SOADVANCED MATERIALS
- DTArticle
- ABThe rapid growth of artificial intelligence (AI) has increased the
demand for large-scale data storage, making hard disk drives (HDDs)
indispensable in data centers due to their cost-effectiveness and
stability. To support AI-driven data requirements, increasing the areal
storage density is critical. However, this metric is increasingly
constrained by the carbon overcoat (COC), the essential protective layer
for magnetic media. Traditional diamond-like carbon (DLC) can no longer
fulfill the stringent demands for ultrathin coatings and high thermal
stability required by next-generation technologies like Heat-Assisted
Magnetic Recording (HAMR) and bit-patterned media. Here, we introduce
monolayer amorphous carbon (MAC) as a superior alternative. MAC is
directly grown on the heterogeneous (Fe, Pt, SiO2) HDD surface at low
temperatures (similar to 300 degrees C), achieving an uniform 0.8 nm
thickness across 2.5-inch disks. Despite its atomic thickness, MAC
demonstrates high corrosion resistance and low roughness comparable to
commercial 2.5 nm COCs. Its fully amorphous, sp2-hybridized structure
ensures excellent thermal stability under HAMR-like conditions (similar
to 450 degrees C) and a low friction coefficient, enabling potential
lubricant-free operation. Replacing traditional COCs with MAC
facilitates the development of HDD media capable of achieving 10 Tb/in2,
addressing the urgent storage demands of the digital era. - Z90
- PUWILEY-V C H VERLAG GMBH
- PAPOSTFACH 101161, 69451 WEINHEIM, GERMANY
- SN0935-9648
- DI10.1002/adma.202519149
- UTWOS:001680918000001
- ER
- EF
|
Hardian, Rifan; Vovusha, Hakkim; Yuan, Yue; Shi, Changxia; Chen, Eugene Y -X; Lanza, Mario; Szekely, Gyorgy Structural and Mechanical Dynamics of Polymer Membranes Across
Multilength Scales ADVANCED SCIENCE, 2026, DOI: 10.1002/advs.202521391. Abstract | BibTeX | Endnote @article{WOS:001664835100001,
title = {Structural and Mechanical Dynamics of Polymer Membranes Across
Multilength Scales},
author = {Rifan Hardian and Hakkim Vovusha and Yue Yuan and Changxia Shi and Eugene Y -X Chen and Mario Lanza and Gyorgy Szekely},
doi = {10.1002/advs.202521391},
times_cited = {0},
year = {2026},
date = {2026-01-01},
journal = {ADVANCED SCIENCE},
publisher = {WILEY},
address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA},
abstract = {Understanding the mechanical and structural evolution of polymer
membranes under heat and strain is important for many applications.
Conventional techniques, such as dynamic mechanical analysis provide
bulk mechanical information but lack the spatial resolution to capture
localized variations. Similarly, X-ray diffraction spectroscopy
effectively probes long-range order but has limited capability in
analyzing amorphous polymer structures. Herein, we reveal the importance
of mechanical and structural analyses across multilength scales. We
unveiled the opposite trend in surface-to-bulk mechanical behavior of
polymer membranes, necessitating the investigation of both regions to
fully capture their functional behavior. We mapped nanoscale mechanical
inhomogeneities across membrane surfaces with in situ atomic force
microscopy quantitative nanomechanics. Further, we uncovered structural
irregularities across both short- and long-range order using in situ
small- and wide-angle scattering spectroscopies. We investigate key
structural parameters and describe density variations in amorphous
domains. Molecular dynamics simulations corroborate with the observed
structural and mechanical properties at the molecular level. Our
multilength-scale characterization strategy provides a robust framework
for elucidating structure-property relationships from macroscopic to
molecular levels. The approach is generalizable to other systems such as
films, fibers, and two-dimensional materials, enabling new insights into
their dynamic properties.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Understanding the mechanical and structural evolution of polymer
membranes under heat and strain is important for many applications.
Conventional techniques, such as dynamic mechanical analysis provide
bulk mechanical information but lack the spatial resolution to capture
localized variations. Similarly, X-ray diffraction spectroscopy
effectively probes long-range order but has limited capability in
analyzing amorphous polymer structures. Herein, we reveal the importance
of mechanical and structural analyses across multilength scales. We
unveiled the opposite trend in surface-to-bulk mechanical behavior of
polymer membranes, necessitating the investigation of both regions to
fully capture their functional behavior. We mapped nanoscale mechanical
inhomogeneities across membrane surfaces with in situ atomic force
microscopy quantitative nanomechanics. Further, we uncovered structural
irregularities across both short- and long-range order using in situ
small- and wide-angle scattering spectroscopies. We investigate key
structural parameters and describe density variations in amorphous
domains. Molecular dynamics simulations corroborate with the observed
structural and mechanical properties at the molecular level. Our
multilength-scale characterization strategy provides a robust framework
for elucidating structure-property relationships from macroscopic to
molecular levels. The approach is generalizable to other systems such as
films, fibers, and two-dimensional materials, enabling new insights into
their dynamic properties. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFRifan Hardian
Hakkim Vovusha
Yue Yuan
Changxia Shi
Eugene Y -X Chen
Mario Lanza
Gyorgy Szekely
- TIStructural and Mechanical Dynamics of Polymer Membranes Across
Multilength Scales - SOADVANCED SCIENCE
- DTArticle
- ABUnderstanding the mechanical and structural evolution of polymer
membranes under heat and strain is important for many applications.
Conventional techniques, such as dynamic mechanical analysis provide
bulk mechanical information but lack the spatial resolution to capture
localized variations. Similarly, X-ray diffraction spectroscopy
effectively probes long-range order but has limited capability in
analyzing amorphous polymer structures. Herein, we reveal the importance
of mechanical and structural analyses across multilength scales. We
unveiled the opposite trend in surface-to-bulk mechanical behavior of
polymer membranes, necessitating the investigation of both regions to
fully capture their functional behavior. We mapped nanoscale mechanical
inhomogeneities across membrane surfaces with in situ atomic force
microscopy quantitative nanomechanics. Further, we uncovered structural
irregularities across both short- and long-range order using in situ
small- and wide-angle scattering spectroscopies. We investigate key
structural parameters and describe density variations in amorphous
domains. Molecular dynamics simulations corroborate with the observed
structural and mechanical properties at the molecular level. Our
multilength-scale characterization strategy provides a robust framework
for elucidating structure-property relationships from macroscopic to
molecular levels. The approach is generalizable to other systems such as
films, fibers, and two-dimensional materials, enabling new insights into
their dynamic properties. - Z90
- PUWILEY
- PA111 RIVER ST, HOBOKEN 07030-5774, NJ USA
- DI10.1002/advs.202521391
- UTWOS:001664835100001
- ER
- EF
|
2025
|
Lai, Wenhui; Lee, Jong Hak; Yeo, Zhen Yuan; Yuan, Yue; Liu, Yuqing; Shi, Lu; Pu, Yanhui; Ong, Yong Kang; Limpo, Carlos Maria Alava; Rao, Yifan; Xiong, Ting; Lanza, Mario; Loh, Duane N; Ozyilmaz, Barbaros Robust Silicon-Based Anode with High Energy Density upon Dual Welding
Encapsulation ACS NANO, 19 (43), pp. 38040-38052, 2025, DOI: 10.1021/acsnano.5c13278. Abstract | BibTeX | Endnote @article{WOS:001598368000001,
title = {Robust Silicon-Based Anode with High Energy Density upon Dual Welding
Encapsulation},
author = {Wenhui Lai and Jong Hak Lee and Zhen Yuan Yeo and Yue Yuan and Yuqing Liu and Lu Shi and Yanhui Pu and Yong Kang Ong and Carlos Maria Alava Limpo and Yifan Rao and Ting Xiong and Mario Lanza and Duane N Loh and Barbaros Ozyilmaz},
doi = {10.1021/acsnano.5c13278},
times_cited = {0},
issn = {1936-0851},
year = {2025},
date = {2025-11-01},
journal = {ACS NANO},
volume = {19},
number = {43},
pages = {38040-38052},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Silicon has long been considered one of the most promising anode
materials for high-performance lithium-ion batteries due to its high
theoretical capacity. However, a significant challenge that restricts
its practical application is the persistent issue of weak interfacial
contact in the silicon anode, which leads to structural instability
during lithiation/delithiation processes due to large volume expansion.
In this work, we develop a dual welding encapsulation strategy by
constructing Si-C chemical bonding between the silicon and conductive
covering shells and establishing C-C interlayer bonding connections
among the covering shells. By directly examining the interface of
silicon-based composites, we identify the types of compounds and hybrid
orbital structures from their spatial distribution using
machine-learning-enhanced transmission electron microscopy analysis
techniques. This dual welding mechanism not only enhances the mechanical
strength of the protective carbon shell but also ensures sustained
electrical connection between the core and shell through the Si-C bonds.
The robust heterogeneous structure effectively mitigates interfacial
instability within the silicon anode, suppressing volume expansion below
12% after 300 cycles. Thus, the full-cell with the composite anode and
LiNi0.8Co0.1Mn0.1O2 cathode performs a high energy density of 576 Wh
kg-1 and stable cycling, inspiring the construction of commercial
silicon batteries.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Silicon has long been considered one of the most promising anode
materials for high-performance lithium-ion batteries due to its high
theoretical capacity. However, a significant challenge that restricts
its practical application is the persistent issue of weak interfacial
contact in the silicon anode, which leads to structural instability
during lithiation/delithiation processes due to large volume expansion.
In this work, we develop a dual welding encapsulation strategy by
constructing Si-C chemical bonding between the silicon and conductive
covering shells and establishing C-C interlayer bonding connections
among the covering shells. By directly examining the interface of
silicon-based composites, we identify the types of compounds and hybrid
orbital structures from their spatial distribution using
machine-learning-enhanced transmission electron microscopy analysis
techniques. This dual welding mechanism not only enhances the mechanical
strength of the protective carbon shell but also ensures sustained
electrical connection between the core and shell through the Si-C bonds.
The robust heterogeneous structure effectively mitigates interfacial
instability within the silicon anode, suppressing volume expansion below
12% after 300 cycles. Thus, the full-cell with the composite anode and
LiNi0.8Co0.1Mn0.1O2 cathode performs a high energy density of 576 Wh
kg-1 and stable cycling, inspiring the construction of commercial
silicon batteries. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFWenhui Lai
Jong Hak Lee
Zhen Yuan Yeo
Yue Yuan
Yuqing Liu
Lu Shi
Yanhui Pu
Yong Kang Ong
Carlos Maria Alava Limpo
Yifan Rao
Ting Xiong
Mario Lanza
Duane N Loh
Barbaros Ozyilmaz
- TIRobust Silicon-Based Anode with High Energy Density upon Dual Welding
Encapsulation - SOACS NANO
- DTArticle
- ABSilicon has long been considered one of the most promising anode
materials for high-performance lithium-ion batteries due to its high
theoretical capacity. However, a significant challenge that restricts
its practical application is the persistent issue of weak interfacial
contact in the silicon anode, which leads to structural instability
during lithiation/delithiation processes due to large volume expansion.
In this work, we develop a dual welding encapsulation strategy by
constructing Si-C chemical bonding between the silicon and conductive
covering shells and establishing C-C interlayer bonding connections
among the covering shells. By directly examining the interface of
silicon-based composites, we identify the types of compounds and hybrid
orbital structures from their spatial distribution using
machine-learning-enhanced transmission electron microscopy analysis
techniques. This dual welding mechanism not only enhances the mechanical
strength of the protective carbon shell but also ensures sustained
electrical connection between the core and shell through the Si-C bonds.
The robust heterogeneous structure effectively mitigates interfacial
instability within the silicon anode, suppressing volume expansion below
12% after 300 cycles. Thus, the full-cell with the composite anode and
LiNi0.8Co0.1Mn0.1O2 cathode performs a high energy density of 576 Wh
kg-1 and stable cycling, inspiring the construction of commercial
silicon batteries. - Z90
- PUAMER CHEMICAL SOC
- PA1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- SN1936-0851
- VL19
- BP38040
- EP38052
- DI10.1021/acsnano.5c13278
- UTWOS:001598368000001
- ER
- EF
|
Xie, Jing; Yekta, Ali Ebadi; Mamun, Fahad Al; Zhu, Kaichen; Chen, Maolin; Pazos, Sebastian; Zheng, Wenwen; Zhang, Xixiang; Tongay, Seth Ariel; Li, Xinyi; Wu, Huaqiang; Nemanich, Robert; Akinwande, Deji; Lanza, Mario; Esqueda, Ivan Sanchez On-chip direct synthesis of boron nitride memristors NATURE NANOTECHNOLOGY, 20 (11), pp. 1596-1604, 2025, DOI: 10.1038/s41565-025-01988-z. Abstract | BibTeX | Endnote @article{WOS:001542121800001,
title = {On-chip direct synthesis of boron nitride memristors},
author = {Jing Xie and Ali Ebadi Yekta and Fahad Al Mamun and Kaichen Zhu and Maolin Chen and Sebastian Pazos and Wenwen Zheng and Xixiang Zhang and Seth Ariel Tongay and Xinyi Li and Huaqiang Wu and Robert Nemanich and Deji Akinwande and Mario Lanza and Ivan Sanchez Esqueda},
doi = {10.1038/s41565-025-01988-z},
times_cited = {9},
issn = {1748-3387},
year = {2025},
date = {2025-11-01},
journal = {NATURE NANOTECHNOLOGY},
volume = {20},
number = {11},
pages = {1596-1604},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Two-dimensional materials hold promise for advanced complementary
metal-oxide-semiconductor (CMOS) and beyond-CMOS electronics, including
neuromorphic and in-memory computing. Hexagonal boron nitride (hBN) is
particularly attractive for non-volatile resistive-switching devices
(that is, memristors) due to its outstanding electronic, mechanical and
chemical stability. However, integrating hBN memristors with Si-CMOS
electronics faces challenges as it requires either high-temperature
synthesis (exceeding thermal budgets) or transfer methods that introduce
defects, impacting device performance and reliability. Here we introduce
the synthesis of hBN films at CMOS-compatible temperatures (<380 degrees
C) using electron cyclotron resonance plasma-enhanced chemical vapour
deposition to realize transfer-free, CMOS-compatible hBN memristors with
outstanding electrical characteristics. Our studies indicate a
polycrystalline structure with turbostratic features in as-deposited hBN
films and good wafer-level uniformity in morphology (size, shape and
orientation). We demonstrate a large array of hBN memristors achieving
high yield (similar to 90%), stability (endurance, retention and
repeatability), programming precision for multistate operation (>16
states) and low-frequency noise performance with minimal random
telegraph noise. Furthermore, we directly integrate memristive devices
on industrial CMOS test vehicles to demonstrate excellent endurance,
achieving millions of programming cycles with a high technology
readiness level. This represents an important step towards the
wafer-scale CMOS integration of hBN-memristor-based electronics.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Two-dimensional materials hold promise for advanced complementary
metal-oxide-semiconductor (CMOS) and beyond-CMOS electronics, including
neuromorphic and in-memory computing. Hexagonal boron nitride (hBN) is
particularly attractive for non-volatile resistive-switching devices
(that is, memristors) due to its outstanding electronic, mechanical and
chemical stability. However, integrating hBN memristors with Si-CMOS
electronics faces challenges as it requires either high-temperature
synthesis (exceeding thermal budgets) or transfer methods that introduce
defects, impacting device performance and reliability. Here we introduce
the synthesis of hBN films at CMOS-compatible temperatures (<380 degrees
C) using electron cyclotron resonance plasma-enhanced chemical vapour
deposition to realize transfer-free, CMOS-compatible hBN memristors with
outstanding electrical characteristics. Our studies indicate a
polycrystalline structure with turbostratic features in as-deposited hBN
films and good wafer-level uniformity in morphology (size, shape and
orientation). We demonstrate a large array of hBN memristors achieving
high yield (similar to 90%), stability (endurance, retention and
repeatability), programming precision for multistate operation (>16
states) and low-frequency noise performance with minimal random
telegraph noise. Furthermore, we directly integrate memristive devices
on industrial CMOS test vehicles to demonstrate excellent endurance,
achieving millions of programming cycles with a high technology
readiness level. This represents an important step towards the
wafer-scale CMOS integration of hBN-memristor-based electronics. - FNClarivate Analytics Web of Science
- VR1.0
- PTJ
- AFJing Xie
Ali Ebadi Yekta
Fahad Al Mamun
Kaichen Zhu
Maolin Chen
Sebastian Pazos
Wenwen Zheng
Xixiang Zhang
Seth Ariel Tongay
Xinyi Li
Huaqiang Wu
Robert Nemanich
Deji Akinwande
Mario Lanza
Ivan Sanchez Esqueda
- TIOn-chip direct synthesis of boron nitride memristors
- SONATURE NANOTECHNOLOGY
- DTArticle
- ABTwo-dimensional materials hold promise for advanced complementary
metal-oxide-semiconductor (CMOS) and beyond-CMOS electronics, including
neuromorphic and in-memory computing. Hexagonal boron nitride (hBN) is
particularly attractive for non-volatile resistive-switching devices
(that is, memristors) due to its outstanding electronic, mechanical and
chemical stability. However, integrating hBN memristors with Si-CMOS
electronics faces challenges as it requires either high-temperature
synthesis (exceeding thermal budgets) or transfer methods that introduce
defects, impacting device performance and reliability. Here we introduce
the synthesis of hBN films at CMOS-compatible temperatures (<380 degrees
C) using electron cyclotron resonance plasma-enhanced chemical vapour
deposition to realize transfer-free, CMOS-compatible hBN memristors with
outstanding electrical characteristics. Our studies indicate a
polycrystalline structure with turbostratic features in as-deposited hBN
films and good wafer-level uniformity in morphology (size, shape and
orientation). We demonstrate a large array of hBN memristors achieving
high yield (similar to 90%), stability (endurance, retention and
repeatability), programming precision for multistate operation (>16
states) and low-frequency noise performance with minimal random
telegraph noise. Furthermore, we directly integrate memristive devices
on industrial CMOS test vehicles to demonstrate excellent endurance,
achieving millions of programming cycles with a high technology
readiness level. This represents an important step towards the
wafer-scale CMOS integration of hBN-memristor-based electronics. - Z99
- PUNATURE PORTFOLIO
- PAHEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY
- SN1748-3387
- VL20
- BP1596
- EP1604
- DI10.1038/s41565-025-01988-z
- UTWOS:001542121800001
- ER
- EF
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