People
Principal Investigator
Lu Jiong
Title
Associate Professor
Degree
PhD, National University of Singapore
BSc, Fudan University
Research Interests
1) Atomic-scale material design, synthesis and characterization 2) Single-atom catalysis and printable materials 3) On-surface synthesis and characterization of organic and inorganic quantum materials 4) Atomic-scale quantum nanoscienc
Office Location
MD1-14-03F
Biography
Jiong Lu holds associate professorship at the Department of Chemistry, Institute for Functional Intelligent Materials, National University of Singapore (NUS). He received his Bachelor’s degree from Fudan University, PhD degree from NUS, and then did postdoctoral research in Department of Physics, University of California, Berkeley. His current research interests include atomic-scale materials design and investigation of atomic-scale science in low-dimensional materials towards next-generation solid state devices and atomically-precise catalysis. Dr. Lu is a recipient of JMCA Emerging Investigators 2019 and NUS Faculty of Science Young Scientist Award (2021). His team has published 100+ high-impact papers, many of these in top journals including 20+ Nature and Science series of publications amongst others. Recent publications were selected as JACS Emerging Investigators 2021 and JACS Readers’ pick 2021.
Selected Publications
- Scalable two-step annealing method for preparing ultra-high-density single-atom catalyst libraries X Hai, J Lu* et al
Nature Nanotechnology, 17 (2), 174-181, 2022 - Printable two-dimensional superconducting monolayers J Li, P Song, KS Novoselov* J Lu* et al
- Nature Materials, 20 (2), 181-187, 2021
- Visualizing atomic structure and magnetism of 2D magnetic insulators via tunneling through graphene Z Qiu, M Holwill, T Olsen, M Kashchenko KS Novoselov*, J Lu* et al
- Nature Communications 12 (1), 1-7, 2021
- Visualizing Designer Quantum States in Stable Macrocycle Quantum Corrals XN Peng, J Lu* et al.
- Nature Communications 2 (1), 1-9, (2021)
- Ultra-high Yield On-surface Synthesis and Assembly of Circumcoronene into Chiral Electronic Kagome-honeycomb Lattice M Telychko, J Lu* et al
- Science Advances 7, eabf0269, 2021
- Atomically-Precise Dopant-Controlled Single Cluster Catalysis for Electrochemical Nitrogen Reduction Yao, C., J Lu * et al.
- Nature Communications 11, 4389, 2020
- Atomically precise bottom-up synthesis of π-extended [5]triangulene J. Su, J. Lu* et al Science Advances 5 (7), eaav7717, 2019
- Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor Z Qiu, M Trushin, J. Lu* et al. Science Advances 5, 2347, 2019
- Tiloring sample-wide pseudo-magnetic fields on a graphene–black phosphorus heterostructure. Liu, …. J Lu*, KP Loh* et al. Nature Nanotechnology 13, 828, 2018
- Atomic engineering of high-density isolated Co atoms on graphene with proximal-atom controlled reaction selectivity H. Yan, J Lu * et al. Nature Communications 9, 3197, 2018
I-FIM Publications:
2024 |
Cheung, Christopher T S; Goodwin, Zachary A H; Han, Yixuan; Lu, Jiong; Mostofi, Arash A; Lischner, Johannes Coexisting Charge Density Waves in Twisted Bilayer NbSe2 NANO LETTERS, 24 (39), pp. 12088-12094, 2024, DOI: 10.1021/acs.nanolett.4c02750. @article{ISI:001317095600001, title = {Coexisting Charge Density Waves in Twisted Bilayer NbSe_{2}}, author = {Christopher T S Cheung and Zachary A H Goodwin and Yixuan Han and Jiong Lu and Arash A Mostofi and Johannes Lischner}, doi = {10.1021/acs.nanolett.4c02750}, times_cited = {0}, issn = {1530-6984}, year = {2024}, date = {2024-09-19}, journal = {NANO LETTERS}, volume = {24}, number = {39}, pages = {12088-12094}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {Twisted bilayers of 2D materials have emerged as a tunable platform for studying broken symmetry phases. While most interest has been focused toward emergent states in systems whose constituent monolayers do not feature broken symmetry states, assembling monolayers that exhibit ordered states into twisted bilayers can also give rise to interesting phenomena. Here, we use first-principles density-functional theory calculations to study the atomic structure of twisted bilayer NbSe2 whose constituent monolayers feature a charge density wave. We find that different charge density wave states coexist in the ground state of the twisted bilayer: monolayer-like 3 x 3 triangular and hexagonal charge density waves are observed in low-energy stacking regions, while stripe charge density waves are found in the domain walls surrounding the low-energy stacking regions. These predictions, which can be tested by scanning tunneling microscopy experiments, highlight the potential to create complex charge density wave ground states in twisted bilayer systems.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Twisted bilayers of 2D materials have emerged as a tunable platform for studying broken symmetry phases. While most interest has been focused toward emergent states in systems whose constituent monolayers do not feature broken symmetry states, assembling monolayers that exhibit ordered states into twisted bilayers can also give rise to interesting phenomena. Here, we use first-principles density-functional theory calculations to study the atomic structure of twisted bilayer NbSe2 whose constituent monolayers feature a charge density wave. We find that different charge density wave states coexist in the ground state of the twisted bilayer: monolayer-like 3 x 3 triangular and hexagonal charge density waves are observed in low-energy stacking regions, while stripe charge density waves are found in the domain walls surrounding the low-energy stacking regions. These predictions, which can be tested by scanning tunneling microscopy experiments, highlight the potential to create complex charge density wave ground states in twisted bilayer systems.
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Qiu, Zhizhan; Vaklinova, Kristina; Huang, Pengru; Grzeszczyk, Magdalena; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Kostya S; Lu, Jiong; Koperski, Maciej Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities ACS NANO, 18 (35), pp. 24035-24043, 2024, DOI: 10.1021/acsnano.4c03640. @article{ISI:001295117800001, title = {Atomic and Electronic Structure of Defects in hBN: Enhancing Single-Defect Functionalities}, author = {Zhizhan Qiu and Kristina Vaklinova and Pengru Huang and Magdalena Grzeszczyk and Kenji Watanabe and Takashi Taniguchi and Kostya S Novoselov and Jiong Lu and Maciej Koperski}, doi = {10.1021/acsnano.4c03640}, times_cited = {0}, issn = {1936-0851}, year = {2024}, date = {2024-08-20}, journal = {ACS NANO}, volume = {18}, number = {35}, pages = {24035-24043}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their midgap electronic structure and orbital/spin wave function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic midgap states to the well-established photoluminescence response (including single-photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: (1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM and (2) multisite defect complexes exhibiting a ladder of empty and occupied midgap states characterized by distinct spatial geometries. Combining direct probing of midgap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Defect centers in insulators play a critical role in creating important functionalities in materials: prototype qubits, single-photon sources, magnetic field probes, and pressure sensors. These functionalities are highly dependent on their midgap electronic structure and orbital/spin wave function contributions. However, in most cases, these fundamental properties remain unknown or speculative due to the defects being deeply embedded beneath the surface of highly resistive host crystals, thus impeding access through surface probes. Here, we directly inspected the atomic and electronic structures of defects in thin carbon-doped hexagonal boron nitride (hBN:C) by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Such investigation adds direct information about the electronic midgap states to the well-established photoluminescence response (including single-photon emission) of intentionally created carbon defects in the most commonly investigated van der Waals insulator. Our joint atomic-scale experimental and theoretical investigations reveal two main categories of defects: (1) single-site defects manifesting as donor-like states with atomically resolved structures observable via STM and (2) multisite defect complexes exhibiting a ladder of empty and occupied midgap states characterized by distinct spatial geometries. Combining direct probing of midgap states through tunneling spectroscopy with the inspection of the optical response of insulators hosting specific defect structures holds promise for creating and enhancing functionalities realized with individual defects in the quantum limit. These findings underscore not only the versatility of hBN:C as a platform for quantum defect engineering but also its potential to drive advancements in atomic-scale optoelectronics.
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Lyu, Pin; Wang, Ziying; Guo, Na; Su, Jie; Li, Jing; Qi, Dongchen; Xi, Shibo; Lin, Huihui; Zhang, Qihan; Pennycook, Stephen J; Chen, Jingsheng; Zhao, Xiaoxu; Zhang, Chun; Loh, Kian Ping; Lu, Jiong Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 146 (30), pp. 20604-20614, 2024, DOI: 10.1021/jacs.4c02160. @article{ISI:001272808300001, title = {Air-Stable Wafer-Scale Ferromagnetic Metallo-Carbon Nitride Monolayer}, author = {Pin Lyu and Ziying Wang and Na Guo and Jie Su and Jing Li and Dongchen Qi and Shibo Xi and Huihui Lin and Qihan Zhang and Stephen J Pennycook and Jingsheng Chen and Xiaoxu Zhao and Chun Zhang and Kian Ping Loh and Jiong Lu}, doi = {10.1021/jacs.4c02160}, times_cited = {0}, issn = {0002-7863}, year = {2024}, date = {2024-07-18}, journal = {JOURNAL OF THE AMERICAN CHEMICAL SOCIETY}, volume = {146}, number = {30}, pages = {20604-20614}, publisher = {AMER CHEMICAL SOC}, address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA}, abstract = {The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The pursuit of robust, long-range magnetic ordering in two-dimensional (2D) materials holds immense promise for driving technological advances. However, achieving this goal remains a grand challenge due to enhanced quantum and thermal fluctuations as well as chemical instability in the 2D limit. While magnetic ordering has been realized in atomically thin flakes of transition metal chalcogenides and metal halides, these materials often suffer from air instability. In contrast, 2D carbon-based materials are stable enough, yet the challenge lies in creating a high density of local magnetic moments and controlling their long-range magnetic ordering. Here, we report a novel wafer-scale synthesis of an air-stable metallo-carbon nitride monolayer (MCN, denoted as MN4/CNx), featuring ultradense single magnetic atoms and exhibiting robust room-temperature ferromagnetism. Under low-pressure chemical vapor deposition conditions, thermal dehydrogenation and polymerization of metal phthalocyanine (MPc) on copper foil at elevated temperature generate a substantial number of nitrogen coordination sites for anchoring magnetic single atoms in monolayer MN4/CNx (where M = Fe, Co, and Ni). The incorporation of densely populating MN4 sites into monolayer MCN networks leads to robust ferromagnetism up to room temperature, enabling the observation of anomalous Hall effects with excellent chemical stability. Detailed electronic structure calculations indicate that the presence of high-density metal sites results in the emergence of spin-split d-bands near the Fermi level, causing a favorable long-range ferromagnetic exchange coupling through direct exchange interactions. Our work demonstrates a novel synthesis approach for wafer-scale MCN monolayers with robust room-temperature ferromagnetism and may shed light on practical electronic and spintronic applications.
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Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Chen, Zhaolong; Kashchenko, Mikhail; Lin, Li; Olsen, Thomas; Li, Jing; Fang, Hanyan; Lyu, Pin; Telychko, Mykola; Gu, Xingyu; Adam, Shaffique; Quek, Su Ying; Rodin, Aleksandr; Neto, Castro A H; Novoselov, Kostya S; Lu, Jiong Evidence for electron-hole crystals in a Mott insulator NATURE MATERIALS, 23 (8), 2024, DOI: 10.1038/s41563-024-01910-3. @article{ISI:001237790900002, title = {Evidence for electron-hole crystals in a Mott insulator}, author = {Zhizhan Qiu and Yixuan Han and Keian Noori and Zhaolong Chen and Mikhail Kashchenko and Li Lin and Thomas Olsen and Jing Li and Hanyan Fang and Pin Lyu and Mykola Telychko and Xingyu Gu and Shaffique Adam and Su Ying Quek and Aleksandr Rodin and Castro A H Neto and Kostya S Novoselov and Jiong Lu}, doi = {10.1038/s41563-024-01910-3}, times_cited = {1}, issn = {1476-1122}, year = {2024}, date = {2024-06-03}, journal = {NATURE MATERIALS}, volume = {23}, number = {8}, publisher = {NATURE PORTFOLIO}, address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY}, abstract = {The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron-hole crystals in a doped Mott insulator, namely, alpha-RuCl3, through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru-Ru bonds, respectively. Moreover, a gate-induced transition of electron-hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron-hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.
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Li, Zejun; Lyu, Pin; Chen, Zhaolong; Guan, Dandan; Yu, Shuang; Zhao, Jinpei; Huang, Pengru; Zhou, Xin; Qiu, Zhizhan; Fang, Hanyan; Hashimoto, Makoto; Lu, Donghui; Song, Fei; Loh, Kian Ping; Zheng, Yi; Shen, Zhi-Xun; Novoselov, Kostya S; Lu, Jiong Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS2 Superlattices ADVANCED MATERIALS, 36 (24), 2024, DOI: 10.1002/adma.202312341. @article{ISI:001199944200001, title = {Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-TaS_{2} Superlattices}, author = {Zejun Li and Pin Lyu and Zhaolong Chen and Dandan Guan and Shuang Yu and Jinpei Zhao and Pengru Huang and Xin Zhou and Zhizhan Qiu and Hanyan Fang and Makoto Hashimoto and Donghui Lu and Fei Song and Kian Ping Loh and Yi Zheng and Zhi-Xun Shen and Kostya S Novoselov and Jiong Lu}, doi = {10.1002/adma.202312341}, times_cited = {0}, issn = {0935-9648}, year = {2024}, date = {2024-04-11}, journal = {ADVANCED MATERIALS}, volume = {36}, number = {24}, publisher = {WILEY-V C H VERLAG GMBH}, address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY}, abstract = {Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)(1.15)TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 x 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)(1.15)TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent T-c of approximate to 3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Noncentrosymmetric transition metal dichalcogenide (TMD) monolayers offer a fertile platform for exploring unconventional Ising superconductivity (SC) and charge density waves (CDWs). However, the vulnerability of isolated monolayers to structural disorder and environmental oxidation often degrade their electronic coherence. Herein, an alternative approach is reported for fabricating stable and intrinsic monolayers of 1H-TaS2 sandwiched between SnS blocks in a (SnS)(1.15)TaS2 van der Waals (vdW) superlattice. The SnS block layers not only decouple individual 1H-TaS2 sublayers to endow them with monolayer-like electronic characteristics, but also protect the 1H-TaS2 layers from electronic degradation. The results reveal the characteristic 3 x 3 CDW order in 1H-TaS2 sublayers associated with electronic rearrangement in the low-lying sulfur p band, which uncovers a previously undiscovered CDW mechanism rather than the conventional Fermi surface-related framework. Additionally, the (SnS)(1.15)TaS2 superlattice exhibits a strongly enhanced Ising-like SC with a layer-independent T-c of approximate to 3.0 K, comparable to that of the isolated monolayer 1H-TaS2 sample, presumably attributed to their monolayer-like characteristics and retained Fermi states. These results provide new insights into the long-debated CDW order and enhanced SC of monolayer 1H-TaS2, establishing bulk vdW superlattices as promising platforms for investigating exotic collective quantum phases in the 2D limit.
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